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1. 发明申请

US20120058427A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权
标题翻译：图案形成方法，化学放大电阻组合物和电阻膜
公开(公告)号：US20120058427A1
公开(公告)日：2012-03-08
申请号：US13320150
申请日：2010-06-14
申请人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani
发明人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.
摘要翻译：一种图案形成方法，包括：（i）从化学增幅抗蚀剂组合物形成膜; （ii）使膜曝光，形成曝光膜; 通过使用包含有机溶剂的显影剂显影曝光的膜，其中化学增幅抗蚀剂组合物包含：（A）能够降低树脂（A）在含有机溶剂的显影剂中的溶解度的树脂酸的作用（B）能够在用光化射线或辐射照射时能产生酸的化合物; 和（C）碱性化合物或铵盐化合物，其碱性在用光化射线或辐射照射时降低，并且提供用于图案形成方法的抗蚀剂组合物和由抗蚀剂组合物形成的抗蚀剂膜。

2. 发明授权

US08034547B2 Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method 有权
标题翻译：图案形成方法，图案形成方法中使用的抗蚀剂组合物，图案形成方法中使用的负显影液和用于图案形成方法的负显影用漂洗溶液
公开(公告)号：US08034547B2
公开(公告)日：2011-10-11
申请号：US12145151
申请日：2008-06-24
申请人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
发明人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizutani , Kenji Wada , Wataru Hoshino
IPC分类号： G03F7/30
CPC分类号： G03F7/0397 , G03F7/325 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要翻译：图案形成方法包括：（a）用包含由以下通式（NGH-1）表示的重复单元的树脂的抗蚀剂组合物涂布基材，并且通过酸的作用增加极性，并降低在负显影液中的溶解度; （b）曝光; 和（d）用负显影液显影：其中RNGH1表示氢原子或烷基; 并且RNGH 2至RNGH 4各自独立地表示氢原子或羟基，条件是RNGH 2至RNGH 4中的至少一个表示羟基。

3. 发明申请

US20110229832A1 PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD 有权
标题翻译：使用含有机溶剂的开发商的图案形成方法和用于图案形成方法的冲洗溶液
公开(公告)号：US20110229832A1
公开(公告)日：2011-09-22
申请号：US13131403
申请日：2009-11-27
申请人： Sou Kamimura , Shinji Tarutani
发明人： Sou Kamimura , Shinji Tarutani
IPC分类号： G03F7/20 , C07C31/125 , C11D7/60
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2024 , G03F7/2041 , G03F7/325
摘要： A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used.
摘要翻译：图案形成方法包括：（i）从用于有机溶剂基显影的抗蚀剂组合物形成抗蚀剂膜的步骤，所述抗蚀剂组合物含有（A）能够通过酸的作用增加极性的树脂以降低在含有机溶剂的显影剂中的溶解度和（B）在用光化射线或辐射照射时能够产生酸的化合物; （ii）曝光步骤; （iii）使用含有机溶剂的显影剂的显影步骤; 和（iv）使用漂洗溶液的洗涤步骤，其中在步骤（iv）中，使用至少含有说明书中所定义的溶剂S1或S2的冲洗溶液。

4. 发明申请

US20100028803A1 SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：用于电阻形成的表面处理剂，耐蚀组合物，处理耐蚀图案的表面的方法和形成耐蚀图案的方法
公开(公告)号：US20100028803A1
公开(公告)日：2010-02-04
申请号：US12533635
申请日：2009-07-31
申请人： Naoya SUGIMOTO , Shinji Tarutani , Sou Kamimura , Kazuto Shimada , Naoyuki Nishikawa , Tomotaka Tsuchimura , Yuko Tada
发明人： Naoya SUGIMOTO , Shinji Tarutani , Sou Kamimura , Kazuto Shimada , Naoyuki Nishikawa , Tomotaka Tsuchimura , Yuko Tada
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/40 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/2041
摘要： A surface treating agent for resist pattern formation comprises a compound having two or more nucleophilic functional groups in each of the molecules thereof, or its salt, and a solvent.
摘要翻译：用于抗蚀剂图案形成的表面处理剂包括在其每个分子中具有两个或更多个亲核官能团的化合物或其盐和溶剂。

5. 发明授权

US07425404B2 Chemical amplification resist composition and pattern-forming method using the same 失效
标题翻译：化学放大抗蚀剂组合物和使用其的图案形成方法
公开(公告)号：US07425404B2
公开(公告)日：2008-09-16
申请号：US11206220
申请日：2005-08-18
申请人： Shinji Tarutani , Hyou Takahashi , Kenji Wada
发明人： Shinji Tarutani , Hyou Takahashi , Kenji Wada
IPC分类号： G03F7/039 , G03F7/038
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392
摘要： A chemical amplification resist composition comprising (A) a resin increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a compound having a fluorine atom and a hydroxyl group, and a pKa value of from 4 to 15, and (D) a solvent, and a pattern-forming method using the same.
摘要翻译：一种化学放大抗蚀剂组合物，其包含（A）通过酸的作用增加在碱性显影剂中的溶解度的树脂，（B）在用光化射线或辐射照射时能够产生酸的化合物，（C）具有氟原子和羟基，pKa值为4〜15，和（D）溶剂，以及使用其的图案形成方法。

6. 发明申请

US20060194148A1 Positive resist composition and pattern forming method using the same 失效
标题翻译：正型抗蚀剂组合物和使用其的图案形成方法
公开(公告)号：US20060194148A1
公开(公告)日：2006-08-31
申请号：US11356051
申请日：2006-02-17
申请人： Hideaki Tsubaki , Shinji Tarutani
发明人： Hideaki Tsubaki , Shinji Tarutani
IPC分类号： G03C1/76
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/039 , G03F7/0395 , G03F7/0397
摘要： The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light, source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.
摘要翻译：本发明提供了在使用ArF准分子激光作为曝光光源时适当使用的正性抗蚀剂组合物，鉴于抗蚀剂轮廓，灵敏度，分辨率和线边缘粗糙度，并且不发生图案，确保了优异的性能以及使用该组合物的图案形成方法，其为正型抗蚀剂组合物，其包含（A）在通过光化射线或辐射照射时能够产生酸的化合物，（B）具有脂环族烃结构的树脂，其在酸的作用下分解以增加在碱中的溶解度，和（C）具有一个或两个选自羟基和羟基的氢原子被取代基的基团的链化合物链状化合物在常压下为固体的有机基团和使用该组合物的图案形成方法。

7. 发明授权

US5615202A Automatic disc changer for a disc reproducing system 失效
标题翻译：用于光盘重放系统的自动换碟机
公开(公告)号：US5615202A
公开(公告)日：1997-03-25
申请号：US368912
申请日：1995-01-05
申请人： Kazuhisa Enomoto , Takao Yamazaki , Taiki Azuma , Shinji Tarutani , Hidetoshi Gokita
发明人： Kazuhisa Enomoto , Takao Yamazaki , Taiki Azuma , Shinji Tarutani , Hidetoshi Gokita
IPC分类号： G11B17/28 , G11B17/30 , G11B17/22 , G11B17/04
CPC分类号： G11B17/28 , G11B17/30
摘要： An automatic disc changer has a casing for the automatic disc changer, and a plurality of disc holders arranged in the casing. The disc holder stores a plurality of discs in vertical position so that each disc can be removed from the disc holder. A plurality of reproducing devices are provided in the casing to be moved along the disc holder. The reproducing device has an opening at a side confronting the disc holder. A loading arm is provided for loading the disc passing through the opening. A wire is connected to opposite sides of the casing along the disc holders so as to prevent the disc stored in the disc holder from removing. A plurality of rollers are disposed in the reproducing device around the opening. The wire is engaged with the rollers so as not to obstruct the opening and to allow each reproducing device to be independently moved from the other reproducing device.
摘要翻译：自动换盘装置具有用于自动换盘装置的壳体和布置在壳体中的多个盘保持架。盘保持器将多个盘存储在垂直位置，使得每个盘可以从盘保持器移除。多个再现装置设置在壳体中以沿着盘保持器移动。再现装置在与盘保持器相对的一侧具有开口。提供装载臂以装载穿过开口的盘。线沿着盘保持器连接到壳体的相对侧，以防止存储在盘保持器中的盘移除。多个辊子围绕开口设置在再现装置中。电线与辊接合，以便不妨碍开口并且允许每个再现装置独立地从另一个再现装置移动。

8. 发明授权

US09116437B2 Pattern forming method, chemical amplification resist composition and resist film 有权
标题翻译：图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
公开(公告)号：US09116437B2
公开(公告)日：2015-08-25
申请号：US13320150
申请日：2010-06-14
申请人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani
发明人： Yuichiro Enomoto , Sou Kamimura , Shinji Tarutani
IPC分类号： G03F7/30 , G03F7/32 , G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A pattern forming method, including: (i) forming a film from a chemical amplification resist composition; (ii) exposing the film, so as to form an exposed film; and (iii) developing the exposed film by using a developer containing an organic solvent, wherein the chemical amplification resist composition contains: (A) a resin capable of decreasing a solubility of the resin (A) in the developer containing an organic solvent by an action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and (C) a basic, compound or ammonium salt compound whose basicity decreases upon irradiation with an actinic ray or radiation, and a resist composition used for the pattern forming method and a resist film formed from the resist composition are provided.
摘要翻译：一种图案形成方法，包括：（i）从化学增幅抗蚀剂组合物形成膜; （ii）使膜曝光，形成曝光膜; 通过使用包含有机溶剂的显影剂显影曝光的膜，其中化学增幅抗蚀剂组合物包含：（A）能够降低树脂（A）在含有机溶剂的显影剂中的溶解度的树脂酸的作用（B）能够在用光化射线或辐射照射时能产生酸的化合物; 和（C）碱性化合物或铵盐化合物，其碱性在用光化射线或辐射照射时降低，并且提供用于图案形成方法的抗蚀剂组合物和由抗蚀剂组合物形成的抗蚀剂膜。

9. 发明授权

US08647812B2 Pattern forming method, chemical amplification resist composition and resist film 有权
标题翻译：图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
公开(公告)号：US08647812B2
公开(公告)日：2014-02-11
申请号：US13636834
申请日：2011-03-18
申请人： Kana Fujii , Shinji Tarutani
发明人： Kana Fujii , Shinji Tarutani
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028 , G03F7/40
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10T428/24479
摘要： A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.
摘要翻译：一种图案形成方法，包括（i）从化学放大抗蚀剂组合物形成膜的步骤，（ii）曝光所述膜的步骤，以及（iii）通过使用含有机溶剂的显影剂使曝光的膜显影的步骤，其中抗蚀剂组合物含有（A）能够通过酸作用增加极性以降低对含有机溶剂的显影剂的溶解度的树脂，（B）至少一种能够产生磺酸的化合物由光化射线或辐射照射时的具体式表示，和（C）溶剂。

10. 发明申请

US20130011619A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM 有权
标题翻译：图案形成方法，化学放大电阻组合物和电阻膜
公开(公告)号：US20130011619A1
公开(公告)日：2013-01-10
申请号：US13636834
申请日：2011-03-18
申请人： Kana Fujii , Shinji Tarutani
发明人： Kana Fujii , Shinji Tarutani
IPC分类号： G03F7/20 , B32B3/30
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10T428/24479
摘要： A pattern forming method comprising (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains (A) a resin capable of increasing the polarity to decrease the solubility for an organic solvent-containing developer by the action of an acid, (B) at least one kind of a compound capable of generating a sulfonic acid represented by the specific formula upon irradiation with an actinic ray or radiation, and (C) a solvent.
摘要翻译：一种图案形成方法，包括（i）从化学放大抗蚀剂组合物形成膜的步骤，（ii）曝光所述膜的步骤，以及（iii）通过使用含有机溶剂的显影剂使曝光的膜显影的步骤，其中抗蚀剂组合物含有（A）能够通过酸作用增加极性以降低对含有机溶剂的显影剂的溶解度的树脂，（B）至少一种能够产生磺酸的化合物由光化射线或辐射照射时的具体式表示，和（C）溶剂。

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