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1. 发明申请

US20160249002A1 IMAGE SENSOR HAVING DIFFERENT SUBSTRATE BIAS VOLTAGES 有权
标题翻译：具有不同基板偏移电压的图像传感器
公开(公告)号：US20160249002A1
公开(公告)日：2016-08-25
申请号：US14989055
申请日：2016-01-06
申请人： Seung-sik KIM , Moo-sup LIM , Ji-won LEE
发明人： Seung-sik KIM , Moo-sup LIM , Ji-won LEE
IPC分类号： H04N5/3745 , H04N5/232 , H01L27/146
CPC分类号： H04N5/3745 , H01L27/14612 , H01L27/14654 , H04N5/3559 , H04N5/3591
摘要： An image sensor having different bias voltages is provided. The image sensor may include a plurality of pixels configured to output pixel signals based on a received optical signal, and logic circuits configured to output the pixels signals as image data. The pixels may be formed on a first region of a semiconductor substrate, the first region being substrate biased to a first voltage. The logic circuits may be formed on a second region of the semiconductor substrate different from the first region, the second region being substrate biased to a second voltage different from the first voltage. A full-well capacitance (FWC) of the photodiode may be increased by applying the first voltage, which is a negative (−) voltage, to a photodiode of a pixel to reduce (or, alternatively prevent) a blooming effect.
摘要翻译：提供具有不同偏置电压的图像传感器。图像传感器可以包括被配置为基于接收到的光信号输出像素信号的多个像素，以及被配置为将像素信号作为图像数据输出的逻辑电路。像素可以形成在半导体衬底的第一区域上，第一区域被衬底偏压到第一电压。逻辑电路可以形成在与第一区域不同的半导体衬底的第二区域上，第二区域被衬底偏压到与第一电压不同的第二电压。可以通过将作为负（ - ）电压的第一电压施加到像素的光电二极管来减少（或备选地防止）起霜效应来增加光电二极管的全阱电容（FWC）。

2. 发明申请

US20160035784A9 UNIT PIXEL OF IMAGE SENSOR, IMAGE SENSOR INCLUDING THE SAME AND METHOD OF MANUFACTURING IMAGE SENSOR 有权
公开(公告)号：US20160035784A9
公开(公告)日：2016-02-04
申请号：US14660570
申请日：2015-03-17
申请人： Yong-Chan KIM , Seung-Sik KIM , Eun-Sub SHIM , Moo-Sup LIM
发明人： Yong-Chan KIM , Seung-Sik KIM , Eun-Sub SHIM , Moo-Sup LIM
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14683 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14689 , H01L27/14806 , H04N5/3559
摘要： Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.

3. 发明申请

US20160013227A1 PIXEL ARRAYS OF IMAGE SENSORS, AND IMAGE SENSORS INCLUDING THE PIXEL ARRAYS 有权
标题翻译：图像传感器的像素阵列和包含像素阵列的图像传感器
公开(公告)号：US20160013227A1
公开(公告)日：2016-01-14
申请号：US14792862
申请日：2015-07-07
申请人： Seung-Sik KIM , Young-Chan KIM , Eun-Sub Shim , Min-Seok OH , Ji-Won LEE , Moo-Sup LIM , Tae-Han KIM , Dong-Joo YANG
发明人： Seung-Sik KIM , Young-Chan KIM , Eun-Sub Shim , Min-Seok OH , Ji-Won LEE , Moo-Sup LIM , Tae-Han KIM , Dong-Joo YANG
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14623 , H01L27/14641
摘要： Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.
摘要翻译：提供了包括与第一像素相邻的第一像素和第二像素的图像传感器的像素阵列。第一像素可以包括第一光电转换装置，第一电荷存储装置，第一浮动扩散节点和第一传输门。第二像素可以包括第二光电转换装置，第二电荷存储装置，第二浮动扩散节点和第二传输门。像素阵列还可以包括在第一电荷存储装置和第二电荷存储装置两者上的存储栅极。存储门可以具有整体结构。

4. 发明授权

US09640571B2 Pixel arrays of image sensors, and image sensors including the pixel arrays 有权
公开(公告)号：US09640571B2
公开(公告)日：2017-05-02
申请号：US14792862
申请日：2015-07-07
申请人： Seung-Sik Kim , Young-Chan Kim , Eun-Sub Shim , Min-Seok Oh , Ji-Won Lee , Moo-Sup Lim , Tae-Han Kim , Dong-Joo Yang
发明人： Seung-Sik Kim , Young-Chan Kim , Eun-Sub Shim , Min-Seok Oh , Ji-Won Lee , Moo-Sup Lim , Tae-Han Kim , Dong-Joo Yang
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14623 , H01L27/14641
摘要： Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

5. 发明申请

US20160100113A1 Image Sensors and Related Methods and Electronic Devices 有权
标题翻译：图像传感器及相关方法和电子设备
公开(公告)号：US20160100113A1
公开(公告)日：2016-04-07
申请号：US14851396
申请日：2015-09-11
申请人： Min-Seok OH , Seung-Sik KIM , Young-Chan KIM , Eun-Sub SHIM , Dong-Joo YANG , Ji-Won LEE , Moo-Sup LIM
发明人： Min-Seok OH , Seung-Sik KIM , Young-Chan KIM , Eun-Sub SHIM , Dong-Joo YANG , Ji-Won LEE , Moo-Sup LIM
IPC分类号： H04N5/369 , H04N5/378 , H04N5/376
CPC分类号： H04N5/3592
摘要： An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period.
摘要翻译：提供了包括像素阵列，相关双采样（CDS）单元，模拟数字转换（ADC）单元，控制单元和溢出电源电压控制单元的图像传感器。像素阵列包括在光电转换周期中产生与入射光对应的累积电荷的至少一个单位像素，并且在读出期间输出基于累积电荷的模拟信号。 CDS单元通过对模拟信号执行CDS操作来产生图像信号。 ADC单元将图像信号转换为数字信号。控制单元控制像素阵列，CDS单元和ADC单元。溢出电源电压控制单元控制溢出电源电压在光电转换周期内具有低电压电平，并且在读出期间控制溢出电源电压具有高电压电平。

6. 发明授权

US09860467B2 Image sensor having different substrate bias voltages 有权
公开(公告)号：US09860467B2
公开(公告)日：2018-01-02
申请号：US14989055
申请日：2016-01-06
申请人： Seung-sik Kim , Moo-sup Lim , Ji-won Lee
发明人： Seung-sik Kim , Moo-sup Lim , Ji-won Lee
IPC分类号： H04N5/335 , H04N5/3745 , H01L27/146 , H04N5/355 , H04N5/359
CPC分类号： H04N5/3745 , H01L27/14612 , H01L27/14654 , H04N5/3559 , H04N5/3591
摘要： An image sensor having different bias voltages is provided. The image sensor may include a plurality of pixels configured to output pixel signals based on a received optical signal, and logic circuits configured to output the pixels signals as image data. The pixels may be formed on a first region of a semiconductor substrate, the first region being substrate biased to a first voltage. The logic circuits may be formed on a second region of the semiconductor substrate different from the first region, the second region being substrate biased to a second voltage different from the first voltage. A full-well capacitance (FWC) of the photodiode may be increased by applying the first voltage, which is a negative (−) voltage, to a photodiode of a pixel to reduce (or, alternatively prevent) a blooming effect.

7. 发明授权

US09653503B2 Image sensor and image processing system including the same 有权
公开(公告)号：US09653503B2
公开(公告)日：2017-05-16
申请号：US14741740
申请日：2015-06-17
申请人： Ji Won Lee , Seung Sik Kim , Young Chan Kim , Tae Han Kim , Eun Sub Shim , Dong Joo Yang , Min Seok Oh , Moo Sup Lim
发明人： Ji Won Lee , Seung Sik Kim , Young Chan Kim , Tae Han Kim , Eun Sub Shim , Dong Joo Yang , Min Seok Oh , Moo Sup Lim
IPC分类号： H01L27/146 , H04N5/378 , H04N5/335 , H04N5/355 , H04N5/359 , H04N5/369
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14643 , H04N5/3592 , H04N5/3696 , H04N5/378
摘要： An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

8. 发明申请

US20150279899A1 UNIT PIXEL OF IMAGE SENSOR, IMAGE SENSOR INCLUDING THE SAME AND METHOD OF MANUFACTURING IMAGE SENSOR 有权
标题翻译：图像传感器的单元像素，包括其的图像传感器和制造图像传感器的方法
公开(公告)号：US20150279899A1
公开(公告)日：2015-10-01
申请号：US14660570
申请日：2015-03-17
申请人： Yong-Chan KIM , Seung-Sik KIM , Eun-Sub SHIM , Moo-Sup LIM
发明人： Yong-Chan KIM , Seung-Sik KIM , Eun-Sub SHIM , Moo-Sup LIM
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14683 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14638 , H01L27/1464 , H01L27/14689 , H01L27/14806 , H04N5/3559
摘要： Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.
摘要翻译：提供一种单位像素，包括该像素的图像传感器，包括该便携式电子设备的便携式电子设备及其制造方法。制造方法包括：在基板上形成光电转换区域; 在衬底中形成与衬底的光电转换区域间隔开的第一浮动扩散区域和与第一浮动扩散区域间隔开的第二浮动扩散区域; 通过从所述衬底的第一表面去除所述衬底的一部分，形成与所述第一浮动扩散区域和所述第二浮动扩散区域间隔开的第一凹部; 填充第一凹部以形成从衬底的第一表面垂直或基本垂直延伸的双转换增益（DCG）栅极; 以及形成导电层以填充所述第一凹部的内部。

9. 发明申请

US20130188085A1 IMAGE SENSORS HAVING REDUCED DARK CURRENT AND IMAGING DEVICES HAVING THE SAME 审中-公开
标题翻译：具有减少的暗电流和成像装置的图像传感器
公开(公告)号：US20130188085A1
公开(公告)日：2013-07-25
申请号：US13616306
申请日：2012-09-14
申请人： Eun Sub Shim , Moo Sup Lim , Seung Sik Kim , Jung Chak Ahn
发明人： Eun Sub Shim , Moo Sup Lim , Seung Sik Kim , Jung Chak Ahn
IPC分类号： H04N5/222 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14612 , H04N5/359 , H04N5/361 , H04N5/3745
摘要： An image sensor includes a photo detector for accumulating charges in response to an incident light, a floating diffusion node, a first reset unit connected between a supply voltage node and the floating diffusion node, a transmission unit for transmitting accumulated charges from the photo detector to the floating diffusion node, a source follower output unit for converting charges stored in the floating diffusion node into an output voltage, a first selection unit for outputting the output voltage selectively, and a second selection unit connected between the floating diffusion node and the source follower output unit. Dark current may be reduced or prevented from flowing from the source follower output unit into the floating diffusion node.
摘要翻译：图像传感器包括响应于入射光积累电荷的光电检测器，浮动扩散节点，连接在电源电压节点和浮动扩散节点之间的第一复位单元，用于将来自光电检测器的累积电荷传输到浮动扩散节点，用于将存储在浮动扩散节点中的电荷转换为输出电压的源极跟随器输出单元，用于选择性地输出输出电压的第一选择单元，以及连接在浮动扩散节点和源极跟随器之间的第二选择单元输出单元。可以减小或防止暗电流从源极跟随器输出单元流入浮动扩散节点。

10. 发明申请

US20150372038A1 IMAGE SENSOR AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME 有权
标题翻译：图像传感器和图像处理系统，包括它们
公开(公告)号：US20150372038A1
公开(公告)日：2015-12-24
申请号：US14741740
申请日：2015-06-17
申请人： Ji Won LEE , Seung Sik KIM , Young Chan KIM , Tae Han KIM , Eun Sub SHIM , Dong Joo YANG , Min Seok OH , Moo Sup LIM
发明人： Ji Won LEE , Seung Sik KIM , Young Chan KIM , Tae Han KIM , Eun Sub SHIM , Dong Joo YANG , Min Seok OH , Moo Sup LIM
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14643 , H04N5/3592 , H04N5/3696 , H04N5/378
摘要： An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.
摘要翻译：提供能够提高浮动扩散节点的电压的图像传感器。图像传感器包括位于半导体衬底中的浮动扩散节点和存储元件。图像传感器包括形成在浮动扩散节点上的第一遮光材料和形成在存储二极管上的第二遮光材料。第二遮光材料与第一遮光材料分离。图像传感器还包括被配置为向第一遮光材料施加第一电压的第一电压供给线和被配置为将低于第一电压的第二电压施加到第二遮光材料的第二电压供给线。

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