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    • 9. 发明申请
    • IMAGE FORMING APPARATUS
    • 图像形成装置
    • US20130014443A1
    • 2013-01-17
    • US13540989
    • 2012-07-03
    • Tae Han KimYang Bae JeonYun Ki You
    • Tae Han KimYang Bae JeonYun Ki You
    • G03G21/00E05F5/02
    • G03G21/1647G03G21/1628
    • An image forming apparatus includes a main body, a document board to open and close an upper side of the main body while being pivoted, and a shock absorber to reduce impact generated when the document board closes the upper side of the main body, wherein the shock absorber includes a link pivotably mounted, at a first end thereof, to the document board while guide protrusions are formed at a second end thereof, and a guide slot formed so that each guide protrusion is movable. Since the guide slot applies a pressure gradually increased from the first end side of the guide slot to the second end side thereof, to the guide protrusion, a speed of the guide protrusion and a pivoting speed of the document board are restricted below a certain speed when the upper side of the main body is closed through the document board.
    • 图像形成装置包括:主体,用于打开和关闭主体的上侧同时被枢转的文档板;以及减震器,用于减小当文档板关闭主体的上侧时产生的冲击,其中, 减震器包括在其第一端处可靠地安装到文件板的连杆,同时在其第二端处形成引导突起,并且形成为使得每个引导突起可移动的引导槽。 由于引导槽施加从引导槽的第一端侧向其第二端侧逐渐增加的压力,所以引导突起的速度和文档板的转动速度被限制在一定速度以下 当主体的上侧通过文档板关闭时。
    • 10. 发明授权
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US08324109B2
    • 2012-12-04
    • US12642496
    • 2009-12-18
    • Tae-Han KimDong-Hyun Kim
    • Tae-Han KimDong-Hyun Kim
    • H01L21/302H01L21/461
    • H01L21/28247H01L21/28061H01L29/4941
    • A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, sequentially forming a silicon layer and a metal layer over the gate insulation layer, performing a first gate etching process to etch the metal layer using a gate hard mask layer, formed on the metal layer, as an etch barrier, and then partially etch the silicon layer, thereby forming a first pattern, performing a second gate etching process to partially etch the silicon layer, thereby forming an undercut beneath the metal layer, forming a capping layer on both sidewalls of the first pattern including the undercut, performing a third gate etching process to etch the silicon layer to expose the gate insulation layer using the gate hard mask layer and the capping layer as an etch barrier, thereby forming a second pattern, and performing a gate re-oxidation process.
    • 一种制造半导体器件的方法包括在衬底上形成栅极绝缘层,在栅极绝缘层上依次形成硅层和金属层,执行第一栅极蚀刻工艺以使用栅极硬掩模层来蚀刻金属层, 形成在金属层上,作为蚀刻阻挡层,然后部分地蚀刻硅层,由此形成第一图案,执行第二栅极蚀刻工艺以部分蚀刻硅层,从而在金属层下方形成底切,形成封盖 在包括底切的第一图案的两个侧壁上,执行第三栅极蚀刻工艺以蚀刻硅层,以使用栅极硬掩模层和封盖层作为蚀刻阻挡层来露出栅极绝缘层,从而形成第二图案, 并进行栅极再氧化处理。