专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140235027A1 SILICON CARRIER SPACE TRANSFORMER AND TEMPORARY CHIP ATTACH BURN-IN VEHICLE FOR HIGH DENSITY CONNECTIONS 审中-公开
标题翻译：硅载体空间变压器和临时芯片连接用于高密度连接的燃烧车辆
公开(公告)号：US20140235027A1
公开(公告)日：2014-08-21
申请号：US13569915
申请日：2012-08-08
申请人： Harvey Hamel , John Ulrich Knickerbocker , Samuel McKnight , Chirag S. Patel
发明人： Harvey Hamel , John Ulrich Knickerbocker , Samuel McKnight , Chirag S. Patel
IPC分类号： H01L21/768 , H01L49/02
CPC分类号： H01L21/76885 , G01R31/2889 , G01R31/2893 , G01R31/2894 , H01L28/10 , H01L28/40
摘要： A silicon carrier space transformer assembly includes one or more silicon structures, which provide space transformer scaling to permit interconnection for fine pitch input/output interconnections with a semiconductor die or wafer, and fine pitch test probe tips connected to the one or more silicon structures.
摘要翻译：硅载体空间变压器组件包括一个或多个硅结构，其提供空间变压器缩放以允许与半导体管芯或晶片的精细间距输入/输出互连的互连，以及连接到所述一个或多个硅结构的细间距测试探针尖端。

2. 发明申请

US20070257689A1 High density thermally matched contacting probe assembly and method for producing same 失效
标题翻译：高密度热匹配接触探针组件及其制造方法
公开(公告)号：US20070257689A1
公开(公告)日：2007-11-08
申请号：US11429419
申请日：2006-05-05
申请人： Timothy Dalton , Simon Karecki , Anna Karecki , Samuel Mcknight , George Walker
发明人： Timothy Dalton , Simon Karecki , Anna Karecki , Samuel Mcknight , George Walker
IPC分类号： G01R31/02
CPC分类号： G01R1/07371 , G01R3/00 , Y10T29/49117 , Y10T29/49204 , Y10T29/49208 , Y10T29/49217 , Y10T29/49995
摘要： A method to fabricate a high density, minimal pitch, thermally matched contactor assembly to maintain electrical contact with contact regions on fully processed semiconductors, preferably while still in wafer form, and throughout a range of temperatures. A guide plate and a contactor assembly for such use, comprising a substrate formed of a material having a coefficient of thermal expansion approximately equal to that of the device; and at least one hole in the guide plate for receiving an electrical contact (probe element) for contacting at least one respective region on said surface, said at least one hole being sized and shaped so as to accept said electrical contact, while allowing said electrical contact (probe element) to move with respect to said hole in said guide plate. The material can be one of silicon, borosilicate glass and cordierite.
摘要翻译：制造高密度，最小间距，热匹配的接触器组件的方法，以保持与完全处理的半导体上的接触区域的电接触，优选同时处于晶片形式，并且在整个温度范围内。一种用于这种用途的引导板和接触器组件，包括由具有大约等于该装置的热膨胀系数的材料形成的基底; 和引导板中的至少一个孔，用于接收用于接触所述表面上的至少一个相应区域的电接触（探针元件），所述至少一个孔的尺寸和形状被设计成接纳所述电接触，同时允许所述电气接触（探针元件）相对于所述引导板中的所述孔移动。该材料可以是硅，硼硅酸盐玻璃和堇青石中的一种。

3. 发明申请

US20060046529A1 High density space transformer and method of fabricating same 失效
标题翻译：高密度空间变压器及其制造方法
公开(公告)号：US20060046529A1
公开(公告)日：2006-03-02
申请号：US10931428
申请日：2004-09-02
申请人： Samuel McKnight , George Walker
发明人： Samuel McKnight , George Walker
IPC分类号： H01R12/00
CPC分类号： H01R9/0515 , G01R1/06772 , G01R1/07378
摘要： A method for forming a space transformer (and a space transformer formed by the method) having a first plate and a second plate, the plates being separated by a frame, and electrical connectors for providing electrical connections between electrical contacts which are relatively closely spaced on the first plate and relatively more widely spaced on the second plate. The method comprises attaching first ends of wires to first electrically conductive regions on the first plate; forming insulating layers over the wires; forming electrically conductive coverings over the insulating layers; and connecting second ends of the wires to second electrically conductive regions on the second plate.
摘要翻译：一种用于形成具有第一板和第二板的空间变压器（和由该方法形成的空间变压器）的方法，所述板由框架分隔开，并且电连接器用于在电触点之间提供电连接，所述电触头相对紧密地间隔开第一板并且在第二板上相对更宽的间隔。该方法包括将导线的第一端附接到第一板上的第一导电区域; 在导线上形成绝缘层; 在绝缘层上形成导电覆盖物; 并且将所述导线的第二端连接到所述第二板上的第二导电区域。

4. 发明申请

US20050167837A1 DEVICE WITH AREA ARRAY PADS FOR TEST PROBING 审中-公开
标题翻译：用于测试探测的区域阵列的设备
公开(公告)号：US20050167837A1
公开(公告)日：2005-08-04
申请号：US10707892
申请日：2004-01-21
申请人： Tien-Jen Cheng , David Eichstadt , Jonathan Griffith , Sarah Knickerbocker , Samuel McKnight , Kevin Petrarca , Kamalesh Srivastava , Roger Quon
发明人： Tien-Jen Cheng , David Eichstadt , Jonathan Griffith , Sarah Knickerbocker , Samuel McKnight , Kevin Petrarca , Kamalesh Srivastava , Roger Quon
IPC分类号： H01L23/485 , H01L23/58 , H01L29/40
CPC分类号： H01L22/32 , H01L24/05 , H01L2224/0401 , H01L2224/05147 , H01L2224/05155 , H01L2224/05655 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14
摘要： A durable chip pad for integrated circuit (IC) chips, semiconductor wafer with IC chips with durable chip pads in a number of die locations and a method of making the IC chips on the wafer. The chip may be probed for performance testing with the probe contacting the durable chip pads directly.
摘要翻译：用于集成电路（IC）芯片的耐用芯片焊盘，具有在多个芯片位置具有耐用芯片焊盘的IC芯片的半导体晶片以及在晶片上制造IC芯片的方法。可以通过探头直接接触耐用的芯片焊盘来探测芯片进行性能测试。

5. 发明申请

US20060249854A1 Device with area array pads for test probing 审中-公开
标题翻译：具有用于测试探测的区域阵列垫的设备
公开(公告)号：US20060249854A1
公开(公告)日：2006-11-09
申请号：US11478933
申请日：2006-06-29
申请人： Tien-Jen Cheng , David Eichstadt , Jonathan Griffith , Sarah Knickerbocker , Samuel McKnight , Kevin Petrarca , Kamalesh Srivastava , Roger Quon
发明人： Tien-Jen Cheng , David Eichstadt , Jonathan Griffith , Sarah Knickerbocker , Samuel McKnight , Kevin Petrarca , Kamalesh Srivastava , Roger Quon
IPC分类号： H01L23/48
CPC分类号： H01L22/32 , H01L24/05 , H01L2224/0401 , H01L2224/05147 , H01L2224/05155 , H01L2224/05655 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14
摘要： A durable chip pad for integrated circuit (IC) chips, semiconductor wafer with IC chips with durable chip pads in a number of die locations and a method of making the IC chips on the wafer. The chip may be probed for performance testing with the probe contacting the durable chip pads directly.
摘要翻译：用于集成电路（IC）芯片的耐用芯片焊盘，具有在多个芯片位置具有耐用芯片焊盘的IC芯片的半导体晶片以及在晶片上制造IC芯片的方法。可以通过探头直接接触耐用的芯片焊盘来探测芯片进行性能测试。

6. 发明授权

US08524596B2 Techniques for improving bond pad performance 有权
标题翻译：提高粘结垫性能的技术
公开(公告)号：US08524596B2
公开(公告)日：2013-09-03
申请号：US13550105
申请日：2012-07-16
申请人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
发明人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
IPC分类号： H01L21/44
CPC分类号： H01L21/76886 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/035 , H01L2224/0362 , H01L2224/03848 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1433 , H01L2924/00014
摘要： Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.
摘要翻译：提供了焊盘制造技术。一方面，形成接合焊盘的方法包括以下步骤。至少一种合金元素被选择性地引入到焊盘的至少一个表面的至少一部分上。所述至少一个合金元素通过一个或多个热循环扩散到所述接合焊盘的至少一部分中。可以通过将包含至少一种合金元素的合金元素层沉积到接合焊盘上并且对该层的至少一部分进行图案化和蚀刻来将至少一种合金元素选择性地引入到焊盘。

7. 发明申请

US20120279767A1 Techniques for Improving Bond Pad Performance 有权
标题翻译：提高键盘性能的技术
公开(公告)号：US20120279767A1
公开(公告)日：2012-11-08
申请号：US13550105
申请日：2012-07-16
申请人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
发明人： Frederic Beaulieu , Gobinda Das , Steven J. Duda , Matthew J. Farinelli , Adreanne Kelly , Samuel McKnight , William J. Murphy
IPC分类号： H05K1/00 , H05K3/00 , H05K1/09
CPC分类号： H01L21/76886 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/035 , H01L2224/0362 , H01L2224/03848 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1433 , H01L2924/00014
摘要： Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.
摘要翻译：提供了焊盘制造技术。一方面，形成接合焊盘的方法包括以下步骤。至少一种合金元素被选择性地引入到焊盘的至少一个表面的至少一部分上。所述至少一个合金元素通过一个或多个热循环扩散到所述接合焊盘的至少一部分中。可以通过将包含至少一种合金元素的合金元素层沉积到接合焊盘上并且对该层的至少一部分进行图案化和蚀刻来将至少一种合金元素选择性地引入到焊盘。

8. 发明申请

US20060244138A1 Techniques for improving bond pad performance 审中-公开
公开(公告)号：US20060244138A1
公开(公告)日：2006-11-02
申请号：US11115936
申请日：2005-04-27
申请人： Frederic Beaulieu , Gobinda Das , Steven Duda , Matthew Farinelli , Adreanne Kelly , Samuel McKnight , William Murphy
发明人： Frederic Beaulieu , Gobinda Das , Steven Duda , Matthew Farinelli , Adreanne Kelly , Samuel McKnight , William Murphy
IPC分类号： H01L23/495
CPC分类号： H01L21/76886 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/035 , H01L2224/0362 , H01L2224/03848 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13099 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01064 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1433 , H01L2924/00014
摘要： Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.

9. 发明申请

US20050067708A1 Semiconductor device having a composite layer in addition to a barrier layer between copper wiring and aluminum bond pad 失效
公开(公告)号：US20050067708A1
公开(公告)日：2005-03-31
申请号：US10605369
申请日：2003-09-25
申请人： Lloyd Burrell , Kwong Wong , Adreanne Kelly , Samuel McKnight
发明人： Lloyd Burrell , Kwong Wong , Adreanne Kelly , Samuel McKnight
IPC分类号： H01L23/485 , H01L23/532 , H01L23/48
CPC分类号： H01L24/05 , H01L23/53223 , H01L24/45 , H01L2224/04042 , H01L2224/05073 , H01L2224/05083 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2924/00011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01327 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.

10. 发明授权

US09159616B2 Silicon carrier space transformer and temporary chip attach burn-in vehicle for high density connections 有权
标题翻译：硅载体空间变压器和临时芯片附加老化车高密度连接
公开(公告)号：US09159616B2
公开(公告)日：2015-10-13
申请号：US13569915
申请日：2012-08-08
申请人： Harvey Hamel , John Ulrich Knickerbocker , Samuel McKnight , Chirag S. Patel
发明人： Harvey Hamel , John Ulrich Knickerbocker , Samuel McKnight , Chirag S. Patel
IPC分类号： H01L21/44 , H01L21/768 , G01R31/28 , H01L49/02
CPC分类号： H01L21/76885 , G01R31/2889 , G01R31/2893 , G01R31/2894 , H01L28/10 , H01L28/40
摘要： A silicon carrier space transformer assembly includes one or more silicon structures, which provide space transformer scaling to permit interconnection for fine pitch input/output interconnections with a semiconductor die or wafer, and fine pitch test probe tips connected to the one or more silicon structures.
摘要翻译：硅载体空间变压器组件包括一个或多个硅结构，其提供空间变压器缩放以允许与半导体管芯或晶片的精细间距输入/输出互连的互连，以及连接到所述一个或多个硅结构的细间距测试探针尖端。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式