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1. 发明申请

WO2004036484A1 LIQUID CRYSTAL DISPLAY DEVICE BUILT-IN FINGER PRINTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：液晶显示装置内置手指打印装置及其制造方法
公开(公告)号：WO2004036484A1
公开(公告)日：2004-04-29
申请号：PCT/KR2003/001768
申请日：2003-08-30
申请人： SAMSUNG ELECTRONICS CO., LTD. , SONG, Jean-Ho , YANG, Sung-Hoon , CHAI, Chong-Chul , CHOI, Joon-Hoo
发明人： SONG, Jean-Ho , YANG, Sung-Hoon , CHAI, Chong-Chul , CHOI, Joon-Hoo
IPC分类号： G06K9/00
CPC分类号： G06K9/0004 , G02F1/13338 , G02F2001/13312
摘要： A liquid crystal display device having fingerprint identification device for enhancing aperture ratio and transmissivity of a TFT-LCD panel is disclosed. A fingerprint identification substrate (400) is attached to a TFT substrate (300). The TFT substrate has color-filter-on-array structure in which the color filters (336) and the thin film transistors can be eliminated, the aperture ratio is increased, and the quality of image display is enhanced. In addition, the transmissivity is increased according to the decrease of the number of glass substrate used in the liquid crystal display device, so that the sensitivity of fingerprint identification is enhanced.
摘要翻译：公开了一种具有用于提高TFT-LCD面板的开口率和透射率的指纹识别装置的液晶显示装置。指纹识别基板（400）附接到TFT基板（300）。 TFT基板具有能够消除滤色器（336）和薄膜晶体管的彩色滤光器阵列结构，开口率增加，图像显示的质量提高。此外，根据液晶显示装置中使用的玻璃基板的数量的减少，透射率增加，从而提高了指纹识别的灵敏度。

2. 发明申请

WO2011115371A3 ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 审中-公开
标题翻译：金属接线用金属接头及其制造金属接线方法
公开(公告)号：WO2011115371A3
公开(公告)日：2012-01-12
申请号：PCT/KR2011001060
申请日：2011-02-17
申请人： SAMSUNG ELECTRONICS CO LTD , DONGJIN SEMICHEM CO LTD , SUH NAM-SEOK , HONG SUN-YOUNG , CHOUNG JONG-HYUN , KIM BONG-KYUN , PARK HONG-SICK , SONG JEAN-HO , LEE WANG-WOO , KIM DO-WON , KIM SANG-WOO , SEO WON-GUK , SHIN HYUN-CHEOL , LEE KI-BEOM , CHO SAM-YOUNG
发明人： SUH NAM-SEOK , HONG SUN-YOUNG , CHOUNG JONG-HYUN , KIM BONG-KYUN , PARK HONG-SICK , SONG JEAN-HO , LEE WANG-WOO , KIM DO-WON , KIM SANG-WOO , SEO WON-GUK , SHIN HYUN-CHEOL , LEE KI-BEOM , CHO SAM-YOUNG
IPC分类号： C23F1/34 , C23F1/02 , H05K3/06
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H05K3/067
摘要： Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要翻译：本发明的示例性实施例提供金属布线蚀刻剂。根据本发明的示例性实施方案的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。

3. 发明申请

WO2011115371A2 ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 审中-公开
标题翻译：金属接线用金属接头及其制造金属接线方法
公开(公告)号：WO2011115371A2
公开(公告)日：2011-09-22
申请号：PCT/KR2011/001060
申请日：2011-02-17
申请人： SAMSUNG ELECTRONICS CO., LTD. , DONGJIN SEMICHEM CO., LTD. , SUH, Nam-Seok , HONG, Sun-Young , CHOUNG, Jong-Hyun , KIM, Bong-Kyun , PARK, Hong-Sick , SONG, Jean-Ho , LEE, Wang-Woo , KIM, Do-Won , KIM, Sang-Woo , SEO, Won-Guk , SHIN, Hyun-Cheol , LEE, Ki-Beom , CHO, Sam-Young
发明人： SUH, Nam-Seok , HONG, Sun-Young , CHOUNG, Jong-Hyun , KIM, Bong-Kyun , PARK, Hong-Sick , SONG, Jean-Ho , LEE, Wang-Woo , KIM, Do-Won , KIM, Sang-Woo , SEO, Won-Guk , SHIN, Hyun-Cheol , LEE, Ki-Beom , CHO, Sam-Young
IPC分类号： C23F1/34 , C23F1/02 , H05K3/06
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H01L27/124 , H05K3/067
摘要： Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要翻译：本发明的示例性实施例提供了一种金属布线蚀刻剂。根据本发明的示例性实施方式的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。

4. 发明申请

WO2003052833A1 A METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING POLY SILICON 审中-公开
标题翻译：使用聚硅制造薄膜晶体管的方法
公开(公告)号：WO2003052833A1
公开(公告)日：2003-06-26
申请号：PCT/KR2002/000131
申请日：2002-01-29
申请人： SAMSUNG ELECTRONICS CO., LTD. , SONG, Jean, Ho , CHOI, Joon, Hoo , CHOI, Beom-Rak , KANG, Myung-Koo , KANG, Sook-Young
发明人： SONG, Jean, Ho , CHOI, Joon, Hoo , CHOI, Beom-Rak , KANG, Myung-Koo , KANG, Sook-Young
IPC分类号： H01L29/786
CPC分类号： H01L29/66757 , H01L29/78675
摘要： A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl 2 , SF 6 and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer. A source region and a drain region opposite each other with respect to the gate electrode are formed by implanting impurities into I the semiconductor layer and a source electrode and drain electrode are forined to be electrically connected to the source region and drain region.
摘要翻译：薄膜晶体管的制造方法。在绝缘基板上形成非晶硅薄膜，并通过横向固化工艺使激光束照射到非晶硅薄膜中而形成多晶硅薄膜而结晶。接下来，通过使用包含Cl 2，SF 6和Ar的气体混合物以3:1:2的比例通过等离子体干法蚀刻去除从多晶硅薄膜的表面突出的突出部分，以平滑多晶硅薄膜的表面，并且通过图案化多晶硅薄膜形成半导体层。形成覆盖半导体层的栅极绝缘膜，并且在与半导体层相对的栅极绝缘膜上形成栅电极。通过将杂质注入到半导体层中而形成源极区域和相对于栅极电极相对的漏极区域，源电极和漏极电极被电连接到源极区域和漏极区域。

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