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    • 5. 发明申请
    • SEMICONDUCTOR DEVICE FOR DETECTING LIGHT AND RADIATION, AND METHOD OF MANUFACTURING THE DEVICE
    • 用于检测光和辐射的半导体器件及其制造方法
    • WO1995026573A1
    • 1995-10-05
    • PCT/JP1995000559
    • 1995-03-27
    • SEIKO INSTRUMENTS INC.SAITOH, YutakaINOUE, MasahiroYAMANAKA, JunkoIKEDA, Hirokazu
    • SEIKO INSTRUMENTS INC.
    • H01L31/112
    • H01L27/1443H01L27/14658
    • A light and radiation detector provided with a semiconductor element in which a MOS transistor and a depletion layer forming means which forms a depletion layer extended to the substrate area of the MOS transistor are formed on the same semiconductor substrate at a prescribed interval and a means which applies a reverse bias voltage to the depletion layer forming means. The detector is further provided with a P-N junction on the semiconductor substrate on which the MOS transistor is formed. The depletion layer resulting from the formation of the P-N junction operates as a detecting section. When light or radiation falls on the depletion layer, the impedance in the detecting section changes with the intensity of the incident light or radiation. Since the substrate potential of the MOS transistor changes with the impedance change, the change of drain current of the MOS transistor is a function of the intensity of the incident light or radiation. The change of the drain current is read out as a detection output. The light and radiation detector is high in operating speed and low in power consumption.
    • 一种具有半导体元件的光和辐射检测器,其中以规定的间隔在相同的半导体衬底上形成MOS晶体管和形成耗尽层的耗尽层形成装置,所述耗尽层形成装置延伸到MOS晶体管的衬底区域, 向耗尽层形成装置施加反向偏置电压。 检测器还在其上形成有MOS晶体管的半导体衬底上设置有P-N结。 由形成P-N结产生的耗尽层作为检测部分进行操作。 当光或辐射落在耗尽层上时,检测部分中的阻抗随入射光或辐射的强度而变化。 由于MOS晶体管的衬底电位随着阻抗变化而变化,所以MOS晶体管的漏极电流的变化是入射光或辐射的强度的函数。 读出漏极电流的变化作为检测输出。 光和辐射检测器的运行速度高,功耗低。
    • 8. 发明申请
    • DC107 DERIVATIVES
    • DC107衍生物
    • WO1997000260A1
    • 1997-01-03
    • PCT/JP1996001646
    • 1996-06-14
    • KYOWA HAKKO KOGYO CO., LTD.KANDA, YutakaSAITOH, YutakaSAITO, HiromitsuASHIZAWA, TadashiSUGIYAMA, KazuyoGOMI, KatsushigeKAKITA, ShingoTAKAHASHI, YuichiMURAKATA, Chikara
    • KYOWA HAKKO KOGYO CO., LTD.
    • C07D513/08
    • C07D513/08
    • DC107 derivatives represented by general formula (I) or pharmacologically acceptable salts thereof, wherein R represents hydrogen, lower alkoxyalkyl, aralkyloxyalkyl, lower alkoxyalkoxyalkyl, lower alkoxyalkoxyalkoxyalkyl, aralkyl, tetrahydropyranyl, COR , etc.; R represents hydrogen or COR ; R represents lower alkyl, lower alkenyl, aralkyl optionally substituted by optionally substituted aryl, lower alkoxyalkyl, aralkyloxyalkyl, optionally substituted aryloxyalkyl, lower alkoxycarbonylalkyl, lower alkanoyloxy-alkyl, alicyclic alkanoyloxyalkyl, etc., or R forms a single bond together with Y; Y forms a single bond together with R or Z; Z represents hydrogen or forms a single bond together with Y; and W represents oxygen or NR , excluding the compound (DC107) wherein R , R and Z are each hydrogen, R forms a single bond together with Y and W is oxygen.
    • 由通式(I)表示的DC107衍生物或其药学上可接受的盐,其中R 1表示氢,低级烷氧基烷基,芳烷氧基烷基,低级烷氧基烷氧基烷基,低级烷氧基烷氧基烷氧基烷基,芳烷基,四氢吡喃基,COR4等; R 2表示氢或COR 5; R 3表示低级烷基,低级烯基,任选被任意取代的芳基取代的芳烷基,低级烷氧基烷基,芳烷氧基烷基,任选取代的芳氧基烷基,低级烷氧基羰基烷基,低级烷酰氧基 - 烷基,脂环族烷酰氧基烷基等,或R 3形成单 与Y键合; Y与R 3或Z一起形成单键; Z表示氢或与Y一起形成单键; W表示氧或NR 6,不包括其中R 1,R 2和Z各自为氢的化合物(DC107),R 3与Y一起形成单键,W是氧。