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1. 发明授权

US5868000A Auger type poultry chiller with clumping prevention 失效
标题翻译：具有防凝结的俄歇式家禽冷冻机
公开(公告)号：US5868000A
公开(公告)日：1999-02-09
申请号：US925491
申请日：1997-09-08
申请人： William F. Morris, Jr. , Robert Chatham , James Poindexter , Terry Wright
发明人： William F. Morris, Jr. , Robert Chatham , James Poindexter , Terry Wright
IPC分类号： A23B4/06 , F25D13/06 , F25D17/02
CPC分类号： A23B4/064 , F25D13/065
摘要： In an auger-type product chiller having an auger including a series of successive flights that form a generally helical structure that, when rotated, moves product through cold water for chilling the product, control elements extending from faces of the flights at a non-zero angle. The control structures prevent "clumping" and packing of poultry product, break up any "clumps" and packs of the product that may develop, and improve product uniformity. In this manner, the advantages of proper agitation, as well as rapid, predictable and even product cooling and moisture introduction, are achieved. Implementations of the control elements include sets of rods extending from the flights at 30.degree. angles from radial lines of affixation to the flights, flat plates extending from the flights at 30.degree. angles from radial lines of affixation to the flights, and sets of rods extending between successive flights near peripheries of the flights.
摘要翻译：在具有螺旋推进器的螺旋式产品冷冻机中，该螺旋推运器包括一系列连续的叶片，其形成大致螺旋结构，当旋转时，产品通过冷水移动以冷却产品，控制元件从非零的平面延伸角度。控制结构防止“集结”和包装禽类产品，打破任何可能发展的产品的“团块”和包装，并提高产品的均匀性。以这种方式，实现了适当搅拌的优点，以及快速，可预测和均匀的产品冷却和湿气引入。控制元件的实施方式包括：从30度角向垂直方向延伸的一组杆，从径向贴附线到翼片，平板从30度角延伸，从径向贴附线到翼片，以及延伸的杆组在靠近飞机周边的连续飞行之间。

2. 发明申请

US20070028838A1 Gas manifold valve cluster 审中-公开
标题翻译：气体歧管阀组
公开(公告)号：US20070028838A1
公开(公告)日：2007-02-08
申请号：US11496993
申请日：2006-07-31
申请人： Craig Bercaw , Dan Cossentine , Jack Yao , Tommy Lo , Jay DeDontney , Lawrence Bartholomew , Robert Chatham
发明人： Craig Bercaw , Dan Cossentine , Jack Yao , Tommy Lo , Jay DeDontney , Lawrence Bartholomew , Robert Chatham
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： C23C16/4401 , C23C16/4409 , C23C16/4412 , C23C16/455 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/45561 , H01L21/6719 , H01L21/67751
摘要： The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and volumes of gas lines that will be exposed to atmosphere during cleaning which minimizes the time required to perform process chamber maintenance and therefore increase the productivity of the process chamber. In other embodiments a gas manifold valve cluster and ALD deposition apparatus are provided.
摘要翻译：本发明一般涉及用于半导体处理的沉积设备。更具体地，本发明的实施例涉及一种气体歧管阀组和沉积装置。在本发明的一些实施例中，提供了一种气体歧管阀组和系统，其促进在清洁过程中将暴露于大气中的气体管线的减小的长度和体积，这使得进行处理室维护所需的时间最小化并因此提高了生产率处理室。在其他实施例中，提供了气体歧管阀组和ALD沉积装置。

3. 发明申请

US20070010072A1 Uniform batch film deposition process and films so produced 审中-公开
标题翻译：均匀分批膜沉积工艺和薄膜如此生产
公开(公告)号：US20070010072A1
公开(公告)日：2007-01-11
申请号：US11482887
申请日：2006-07-07
申请人： Robert Bailey , Taiqing Qiu , Cole Porter , Olivier Laparra , Robert Chatham , Martin Mogaard , Helmuth Treichel
发明人： Robert Bailey , Taiqing Qiu , Cole Porter , Olivier Laparra , Robert Chatham , Martin Mogaard , Helmuth Treichel
IPC分类号： H01L21/20
CPC分类号： C23C16/54 , C23C16/308 , C23C16/345 , C23C16/402 , C23C16/45504 , C23C16/45578 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/3145 , H01L21/31612 , H01L21/3185
摘要： A batch of wafer substrates is provided with each wafer substrate having a surface. Each surface is coated with a layer of material applied simultaneously to the surface of each of the batch of wafer substrates. The layer of material is applied to a thickness that varies less than four thickness percent across the surface and exclusive of an edge boundary and having a wafer-to-wafer thickness variation of less than three percent. The layer of material so applied is a silicon oxide, silicon nitride or silicon oxynitride with the layer of material being devoid of carbon and chlorine. Formation of silicon oxide or a silicon oxynitride requires the inclusion of a co-reactant. Silicon nitride is also formed with the inclusion of a nitrification co-reactant. A process for forming such a batch of wafer substrates involves feeding the precursor into a reactor containing a batch of wafer substrates and reacting the precursor at a wafer substrate temperature, total pressure, and precursor flow rate sufficient to create such a layer of material. The delivery of a precursor and co-reactant as needed through vertical tube injectors having multiple orifices with at least one orifice in registry with each of the batch of wafer substrates and exit slits within the reactor to create flow across the surface of each of the wafer substrates in the batch provides the within-wafer and wafer-to-wafer uniformity.
摘要翻译：一批晶片基板设置有每个晶片基板具有表面。每个表面涂覆有同时施加到每批晶片衬底的表面的一层材料。该材料层被施加到在整个表面上变化小于四个厚度百分比的厚度，而不是边缘边界，并且晶片到晶片的厚度变化小于3％。如此施加的材料层是氧化硅，氮化硅或氮氧化硅，其中该材料层不含碳和氯。氧化硅或氮氧化硅的形成需要包含共反应物。氮化氮也通过包含硝化共反应物形成。用于形成这样一批晶片衬底的方法包括将前体进料到含有一批晶片衬底的反应器中，并在足以产生这种材料层的晶片衬底温度，总压力和前体流速下使前体反应。根据需要通过具有多个孔的垂直管注射器输送前体和共反应物，其中至少一个孔与反应器内的每批晶片基板和出口狭缝对齐，以产生跨过每个晶片的表面的流动该批次中的衬底提供了晶片内和晶片与晶片之间的均匀性。

4. 发明申请

US20060051506A1 Nitridation of high-k dielectrics 审中-公开
标题翻译：高k电介质的氮化
公开(公告)号：US20060051506A1
公开(公告)日：2006-03-09
申请号：US11002365
申请日：2004-12-01
申请人： Yoshihide Senzaki , Craig Bercaw , Robert Chatham , Randall Higuchi , Eugene Lopata
发明人： Yoshihide Senzaki , Craig Bercaw , Robert Chatham , Randall Higuchi , Eugene Lopata
IPC分类号： C23C16/00
CPC分类号： H01L21/02332 , H01L21/02148 , H01L21/02181 , H01L21/02266 , H01L21/02271 , H01L21/0228 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/3141 , H01L21/3142 , H01L21/3143 , H01L21/31612 , H01L21/31645
摘要： A method of making high-k dielectrics is provided. The method comprises providing a substrate having a high-k dielectric layer deposited thereon in a process chamber and introducing a nitrogen containing gas into the process chamber to incorporate nitrogen into the high-k dielectric layer. In one embodiment, the nitrogen containing gas is a nitrogen plasma gas from a source disposed outside the process chamber. The nitrogen plasma gas is introduced into the process chamber at a flow rate from 0 to about 5000 sccm over a time period of about 20 to 1800 seconds. In another embodiment, the process chamber is maintained at a pressure of about 1 to 100 Torr, and at a wafer temperature in the range of about 200° C.-700° C. The high-k dielectric film pre-deposited on the substrate can be formed by atomic layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), jet vapor deposition (JVD), aerosol pyrolysis, and spin-coating.
摘要翻译：提供了制造高k电介质的方法。该方法包括在处理室中提供其上沉积有高k电介质层的衬底，并将含氮气体引入处理室以将氮掺入高k电介质层。在一个实施方案中，含氮气体是来自设置在处理室外部的源的氮等离子体气体。氮气等离子体气体在约20至1800秒的时间内以0至约5000sccm的流速引入处理室。在另一个实施方案中，处理室保持在约1至100托的压力下，晶片温度保持在约200℃-700℃的范围内。预沉积在基板上的高k电介质膜可以通过原子层沉积，化学气相沉积（CVD），物理气相沉积（PVD），喷射气相沉积（JVD），气溶胶热解和旋涂形成。

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