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1. 发明专利

JP2008288565A Phase change memory element 审中-公开
标题翻译：相变记忆元素
公开(公告)号：JP2008288565A
公开(公告)日：2008-11-27
申请号：JP2008086424
申请日：2008-03-28
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： LIU YINGLI
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1293 , H01L45/144 , H01L45/1683 , H01L45/1691
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory element and a method of manufacturing the same. SOLUTION: The phase change memory element includes a first electrode 103, a second electrode 107, a first phase variation material layer 114 formed between the first electrode 103 and the second electrode 107 for connecting the electrode 103 with the second electrode 107 electrically, and an oxide collar construction 112a for covering the side wall of first phase variation material layer 114. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种相变存储元件及其制造方法。相变存储元件包括第一电极103，第二电极107，形成在第一电极103和第二电极107之间的第一相变材料层114，用于将电极103与第二电极107电连接，以及用于覆盖第一相变材料层114的侧壁的氧化物套环结构112a。（C）2009，JPO＆INPIT

2. 发明专利

JP2008243355A Current compensation circuit and memory with current compensation circuit 审中-公开
标题翻译：电流补偿电路和存储器与电流补偿电路
公开(公告)号：JP2008243355A
公开(公告)日：2008-10-09
申请号：JP2008022577
申请日：2008-02-01
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： SHEU SHYH-SHYUAN , LIN LIEH-CHIU , CHIANG PEI-CHIA
IPC分类号： G11C13/00
CPC分类号： G11C7/1078 , G11C7/1096 , G11C13/0004 , G11C13/0069 , G11C2013/0078
摘要： PROBLEM TO BE SOLVED: To provide a current compensation circuit and a memory with the current compensation circuit. SOLUTION: The current compensation circuit includes: a write driver 21 that provides a write current to a write path; a distance detecting circuit 24 that is connected to the write path, detects distance the write current flows and outputs a control signal based on the distance; an operation element 25 that is connected to the write path; and an auxiliary write driver 23 that provides an auxiliary current to the write path based on the control signal. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供电流补偿电路和具有电流补偿电路的存储器。电流补偿电路包括：向写入路径提供写入电流的写入驱动器21; 连接到写入路径的距离检测电路24检测写入电流流动的距离，并基于该距离输出控制信号; 连接到写入路径的操作元件25; 以及辅助写入驱动器23，其基于控制信号向写入路径提供辅助电流。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008283163A Phase change memory element 有权
标题翻译：相变记忆元素
公开(公告)号：JP2008283163A
公开(公告)日：2008-11-20
申请号：JP2007315873
申请日：2007-12-06
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： CHIN TATSU , TSAI MING-JINN
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/1683 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory element that makes heating loss reduced.
SOLUTION: The phase change memory element includes a lower electrode 12 formed on a substrate 10; a composite layer 20, containing a dielectric material 16 and a low heat-conducting material 18, which is formed on an insulating layer 14; a phase change material 24 filled in a through-hole formed in the composite layer 20; and an upper electrode 26. The phase change material 24 is formed at least in a part of the through-hole, and is In, Ge, Sb, Te or mixture of them, GeSbTe or InGeSbTe. The composite layer 20 is a complex layer or a mixed layer of the dielectric material 16 which is a silicon-containing compound, for example, silicon oxide, silicon nitride or a mixture of them, and the low heat-conducting material 18 which is a phase change material, a phase change material doped with nitrogen, or a phase change material doped with oxygen.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供减少加热损失的相变存储元件。相变存储元件包括形成在基板10上的下电极12; 复合层20，其包含形成在绝缘层14上的电介质材料16和低导热材料18; 填充在复合层20中形成的通孔中的相变材料24; 和上电极26.相变材料24至少形成在通孔的一部分中，并且是In，Ge，Sb，Te或它们的混合物，GeSbTe或InGeSbTe。复合层20是作为含硅化合物的介电材料16的复合层或混合层，例如氧化硅，氮化硅或它们的混合物，以及低导热材料18 相变材料，掺杂有氮的相变材料，或掺杂有氧的相变材料。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2000075491A Method for decreasing influence of reflection in execution process of photolithography method 有权
标题翻译：降低光刻方法执行反射影响的方法
公开(公告)号：JP2000075491A
公开(公告)日：2000-03-14
申请号：JP24504998
申请日：1998-08-31
申请人： Mosel Vitelic Inc , Promos Technol Inc , Siemens Ag , シーメンス・アクチェンゲゼルシャフト , プロモス.テクノロジイズ.インコーポレイテッド , モーゼル.ヴァイテリック.インコーポレイテッド
发明人： WEN-PIN EN , CHIA-RIN KUU
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027
CPC分类号： H01L21/0276 , G03F7/091
摘要： PROBLEM TO BE SOLVED: To prevent the occurrence of a problem associated with undesirable reflection by effectively controlling the intensity of the reflected ray to be encountered in the execution process of a photolithography method by using a guide material antireflection coating (DARC) layer. SOLUTION: The DARC layer 32 is formed by plasma CVD using SiH4 and H2O deposited by evaporation on a primer coating layer 31 as reactetants. The DARC layer 32 is composed of an SixOyNz material. If the compsn. of the DARC layer 32 is achieved by changing the amts. of the material compsn. (x, y, z) by regulation of the flow rate and processing time of reactive gases during the time of the plasma CVD, optical interference is eventually induced when the incident ray transmits the DARC layer 32 and the reflection is lessened to the max. possible extent. In such a case, the inlet of the incident ray 40 eventually forms a reflected ray 43 and a reflected ray 44. Similarly, the DARC layer 32 gives rise to absorption and phase fluctuation in the reflected ray 44 and as a result thereof, the phase fluctuation does not eventually occur when the reflected ray 44 is coupled to the reflected ray 43.
摘要翻译：要解决的问题：通过使用引导材料抗反射涂层（DARC）层，通过有效地控制在光刻方法的执行过程中遇到的反射光线的强度来防止与不期望的反射相关的问题的发生。解决方案：DARC层32通过等离子体CVD形成，其中使用通过蒸发沉积的SiH 4和H 2作为反应物在底漆涂层31上形成。 DARC层32由SixOyNz材料组成。如果compsn。的DARC层32是通过改变amts实现的。的材料组成。（x，y，z）通过调节等离子体CVD期间的反应气体的流速和处理时间，当入射光线透射DARC层32并且反射减小到最大值时，最终引起光学干涉。可能的程度在这种情况下，入射光线40的入口最终形成反射光线43和反射光线44.类似地，DARC层32引起反射光线44中的吸收和相位波动，结果是相位当反射光线44耦合到反射光线43时，不会发生波动。

5. 发明专利

JP2008300820A Phase change memory device and method for manufacturing the same 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：JP2008300820A
公开(公告)日：2008-12-11
申请号：JP2008083252
申请日：2008-03-27
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： LEE CHIEN-MIN
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/144 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/124 , H01L45/126 , H01L45/1691
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory device for reducing the contact region of a phase change memory layer and an electrode and increasing integration effect, and to provide a method for manufacturing the same. SOLUTION: The phase change memory device 100 includes an array of phase change memory cells. Each phase change memory cell includes a selecting MOS transistor disposed on a substrate 110. An upright electrode structure 135 is electrically connected to the transistor through a conductive plug 130. An upright phase change memory layer 140 is stacked on the upright electrode structure 135 with a contact area 145, wherein the contact area 145 serves as a phase transition location. By introducing upright heating electrodes 135 and upright phase change memory layers 140, minimum contact area can be achieved, and operation currents can be further reduced. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于减小相变存储层和电极的接触区域并增加集成效应的相变存储器件，并提供其制造方法。相变存储器件100包括相变存储器单元的阵列。每个相变存储单元包括设置在基板110上的选择MOS晶体管。直立电极结构135通过导电插塞130与晶体管电连接。直立相变存储层140在直立电极结构135上堆叠接触区域145，其中接触区域145用作相变位置。通过引入直立加热电极135和直立相变存储层140，可以实现最小接触面积，并且可以进一步降低工作电流。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008226427A Writing method and system for phase change memory 有权
标题翻译：相位变化记忆的写入方法和系统
公开(公告)号：JP2008226427A
公开(公告)日：2008-09-25
申请号：JP2008009472
申请日：2008-01-18
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： CHEN MING-JUNG , CHAO TE-SHENG , GAN SHINBU
IPC分类号： G11C13/00
CPC分类号： G11C7/04 , G11C13/0004 , G11C13/0069 , G11C2013/0078
摘要： PROBLEM TO BE SOLVED: To provide a writing method for a phase change memory. SOLUTION: The writing method for a phase change memory comprises steps of: inputting a first writing pulse signal to the phase change memory to heat the phase change memory to a first temperature; and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于相变存储器的写入方法。解决方案：相变存储器的写入方法包括以下步骤：将第一写入脉冲信号输入到相变存储器，以将相变存储器加热到第一温度; 以及将第二写入脉冲信号输入到所述相变存储器，以将所述相变存储器保持在第二温度。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008193071A Phase change memory 审中-公开
标题翻译：相变记忆
公开(公告)号：JP2008193071A
公开(公告)日：2008-08-21
申请号：JP2008006653
申请日：2008-01-16
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： CHUO YEN , CHIN TATSU
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： G11C13/0004 , G11C2213/56 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1683
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory element exhibiting an excellent temperature uniformity, the manufacture process of which is comparatively simple, capable of adapting to various cell designs, and the cost of which can be kept at low.
SOLUTION: A phase change memory element 200 includes a first electrode 101 and a second electrode 106 including a phase change material, and a metal layer 103 of embedded type with a phase change layer formed between the first electrode 101 and the second element 106 and electrically connected to the first electrode and the second electrode, and further including a conductive path in which a current flows through the metal layer of embedded type with the phase change layer when a bias voltage is supplied to the phase change memory element.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种表现出优异的温度均匀性的相变存储元件，其制造过程相对简单，能够适应各种电池设计，并且其成本可以保持在较低水平。解决方案：相变存储元件200包括第一电极101和包括相变材料的第二电极106以及在第一电极101和第二元件之间形成有相变层的嵌入式金属层103 106，并且电连接到第一电极和第二电极，并且当偏置电压被提供给相变存储元件时，还包括电流通过相变层流过具有嵌入式金属层的导电路径。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008171541A Method and system for driving phase change memory 审中-公开
标题翻译：驱动相变存储器的方法和系统
公开(公告)号：JP2008171541A
公开(公告)日：2008-07-24
申请号：JP2007328602
申请日：2007-12-20
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： SHEU SHYH-SHYUAN , LIN LIEH-CHIU , CHIANG PEI-CHIA , WANG WEN-HAN
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C16/349
摘要： PROBLEM TO BE SOLVED: To provide a driving method and a driving system that avoid over-writing of a phase change memory. SOLUTION: The method includes counting the number of accesses to the phase change memory (including the number of RESET, the number of SET, or the number read), and refreshing it when the number of accesses is larger than a first predetermined value, in which SET and RESET operations are successively performed. Thereby, the phase change memory is prevented from being excessively crystallized or non-crystallized. COPYRIGHT: (C)2008,JPO&INPIT

9. 发明专利

JP2008182230A Phase change memory device and its manufacturing method 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：JP2008182230A
公开(公告)日：2008-08-07
申请号：JP2008009677
申请日：2008-01-18
申请人： Huabang Electronic Co Ltd , Ind Technol Res Inst , Nanya Sci & Technol Co Ltd , Powerchip Semiconductor Corp , Promos Technol Inc , 力晶半導體股▲ふん▼有限公司 , 南亞科技股▲ふん▼有限公司 , 茂徳科技股▲ふん▼有限公司 , 華邦電子股▲ふん▼有限公司 , 財団法人工業技術研究院Industrial Technology Research Institute
发明人： HSU HONG-HUI
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory device and its manufacturing method. SOLUTION: This phase change memory device includes a substrate, a metal plug formed on the substrate, a phase change material layer formed on the metal plug while electrically connected to it, a heating electrode formed on the phase change material layer while electrically connected to it, and a conductive layer formed on the heating electrode. COPYRIGHT: (C)2008,JPO&INPIT

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