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1. 发明授权

US08299286B2 Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US08299286B2
公开(公告)日：2012-10-30
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Connie L. Gordon, legal representative , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
发明人： Robin A. Gardiner , Thomas H. Baum , Douglas Cameron Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra , Peter S. Kirlin
IPC分类号： C07F7/00 , C23C18/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A β-diketonate alkoxide metal compound and a source reagent composition are provided. The β-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one β-diketonate ligand.
摘要翻译：提供了一种二酮醇盐金属化合物和一种源试剂组合物。所述二烷基醇盐金属化合物可以包括选自Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd，Cr，W ，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi，Lu，Th ，Pd，Pt，Ga，In，Au，Ag，Li，Na，K，Rb，Cs，Mo和Yb。该金属可以与至少一种醇盐配体和一种β-二酮配体络合。

2. 发明授权

US5820664A Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same 失效
标题翻译：用于化学气相沉积的前体组合物和包含其的配体交换金属 - 有机前体溶液
公开(公告)号：US5820664A
公开(公告)日：1998-10-13
申请号：US414504
申请日：1995-03-31
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G02B6/036 , H01L39/24 , C09K3/00
CPC分类号： H01L39/2441 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/45561 , Y10S423/14
摘要： A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.
摘要翻译：一种金属源试剂液体溶液，其包含：（i）至少一种金属配位络合物，其包含与稳定络合物中的至少一种配位体配位结合的金属，其中所述配体选自β-二酮化合物， β-酮基，β-二亚胺，C 1 -C 8烷基，C 2 -C 10烯基，C 2 -C 15环烯基，C 6 -C 10芳基，C 1 -C 8烷氧基及其氟化衍生物; 和（ii）金属配位络合物的溶剂。该溶液有效地用于金属配位络合物如Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd的金属化学气相沉积，Cr，W，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi ，和/或Yb。溶剂可以包括甘醇二甲醚溶剂，链烷醇，有机醚，脂族烃和/或芳族烃。具有两种或更多种金属配位络合物的本发明的溶液对有害的配体交换反应具有抗性，这对于CVD应用的金属络合物的稳定性和/或挥发性是不利的。

3. 发明授权

US6110529A Method of forming metal films on a substrate by chemical vapor deposition 失效
标题翻译：通过化学气相沉积在基板上形成金属膜的方法
公开(公告)号：US6110529A
公开(公告)日：2000-08-29
申请号：US484654
申请日：1995-06-07
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C07F3/00 , C07F5/00 , C07F7/00 , C07F9/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24
CPC分类号： C07F3/003 , C07F19/005 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , G02B6/02 , H01L39/2441
摘要： A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.-thioketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：一种在衬底上形成金属膜的方法，包括通过化学气相沉积从所述下式的金属有机络合物沉积所述金属膜：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮化合物，β-硫代酮酸酯，环戊二烯基，烷基，全氟烷基，烷氧基化物，全氟烷氧基化物和希夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

4. 发明授权

US5919522A Growth of BaSrTiO.sub.3 using polyamine-based precursors 失效
标题翻译：使用多胺类前体生长BaSrTiO3
公开(公告)号：US5919522A
公开(公告)日：1999-07-06
申请号：US835768
申请日：1997-04-08
申请人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
发明人： Thomas H. Baum , Gregory T. Stauf , Peter S. Kirlin , Duncan W. Brown , Robin A. Gardiner , Gautam Bhandari , Brian A. Vaartstra
IPC分类号： C07C49/12 , C07C211/14 , C23C16/18 , C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/18 , C23C16/40 , C23C16/409 , C23C16/4481
摘要： A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.
摘要翻译：一种在化学气相沉积区中在衬底上形成BaSrTiO3薄膜的方法，该方法通过包括蒸发器的液体输送装置将含金属膜的金属前体组合物输送到化学气相沉积区。将液体前体材料供给到液体输送装置中以使其蒸发以产生气相金属前体组合物。气相金属前体组合物流到化学气相沉积区，用于在基底上沉积金属以形成含金属膜。液体前体材料包括金属有机多胺络合物，其用途允许在维持事件之间实现液体输送化学气相沉积工艺的持续操作，这是由于在多胺络合的前体的蒸发中实现的低分解水平。

5. 发明申请

US20110171382A1 SOURCE REAGENT COMPOSITIONS AND METHOD FOR FORMING METAL FILMS ON A SUBSTRATE BY CHEMICAL VAPOR DEPOSITION 失效
标题翻译：源试剂组合物和通过化学气相沉积在基材上形成金属膜的方法
公开(公告)号：US20110171382A1
公开(公告)日：2011-07-14
申请号：US11949871
申请日：2007-12-04
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Connie L. Gordon , Timothy E. Glassman , Sophia Pombrik , Brian A. Vaarstra
IPC分类号： C23C16/06 , C07C49/92 , C07F7/28 , C07F7/00 , C07F7/24 , C07F5/00 , C09D1/00
CPC分类号： C23C16/409 , C07C49/92 , C07F7/003 , C23C16/18 , C23C16/305 , C23C16/40 , C23C16/405 , C23C16/408
摘要： A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing monodentate or multidentate ligands containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F; wherein when the number of metal atoms is one and concurrently the number of complexing monodentate or multidentate ligands is one, then the complexing monodentate or multidentate ligand of the metalorganic complex is selected from the group consisting of beta-ketoiminates, beta-diiminates, C2-C10 alkenyl, C2-C15 cycloalkenyl and C6-C10 aryl.
摘要翻译：一种金属有机络合物组合物，其包含选自以下的金属有机络合物：包含与一个或多个单齿或多齿有机配体配位的一个或多个金属中心原子的金属有机络合物，并与一个或多个络合的单齿或多齿配位体络合，所述配位体含有一个或多个独立地选自元素C，N，H，S，O和F的原子的原子; 其中当金属原子数为1并且同时复合单齿或多齿配体的数目为1时，金属有机络合物的络合单齿或多齿配体选自β-酮亚胺，β-二亚胺，C2- C10链烯基，C2-C15环烯基和C6-C10芳基。

6. 发明授权

US6162712A Platinum source compositions for chemical vapor deposition of platinum 失效
标题翻译：用于铂化学气相沉积的铂源组合物
公开(公告)号：US6162712A
公开(公告)日：2000-12-19
申请号：US008705
申请日：1998-01-16
申请人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
发明人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
IPC分类号： C07C49/12 , C07C49/167 , C07C49/92 , C07F15/00 , C07F17/02 , C23C14/26 , C23C16/18 , G06F12/00 , H01L21/02 , H01L21/285 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L21/44
CPC分类号： C23C16/18 , C07C49/92 , C07F17/02 , H01L28/65
摘要： A platinum source reagent liquid solution, comprising:(i) at least one platinum source compound selected from the group consisting of compounds of the formulae:(A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and(B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and(ii) a solvent medium therefor.The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.
摘要翻译：一种铂源试剂液体溶液，其包含：（i）至少一种铂源化合物，其选自下式的化合物：（A）RCpPt（IV）R'3化合物，其具有下式：其中：R选自由氢，甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基组成的组; 并且每个R'独立地选自甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 和（B）下式的Pt（β-二酮化合物）2：其中：每个R“独立地选自甲基，乙基，正丙基，异丙基，正丁基，异丁基，叔丁基 - 丁基，三氟甲基，全氟乙基和全氟正丙基，和（ⅱ）其溶剂介质。本发明的铂源试剂液体溶液容易地用于包括用于挥发源试剂液体溶液并将所得蒸气输送到化学气相沉积反应器的液体输送装置的化学气相沉积工艺系统中，以将铂沉积在安装的基板上在CVD反应器中。

7. 发明授权

US5783716A Platinum source compositions for chemical vapor deposition of platinum 失效
标题翻译：用于铂化学气相沉积的铂源组合物
公开(公告)号：US5783716A
公开(公告)日：1998-07-21
申请号：US673372
申请日：1996-06-28
申请人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
发明人： Thomas H. Baum , Peter S. Kirlin , Sofia Pombrik
IPC分类号： C07C49/12 , C07C49/167 , C07C49/92 , C07F15/00 , C07F17/02 , C23C14/26 , C23C16/18 , G06F12/00 , H01L21/02 , H01L21/285 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： C23C16/18 , C07C49/92 , C07F17/02 , H01L28/65
摘要： A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae: (A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and (B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and (ii) a solvent medium therefor. The platinum source reagent liquid solutions of the invention are readily employed in a chemical vapor deposition process system including a liquid delivery apparatus for volatilizing the source reagent liquid solution and transporting the resulting vapor to the chemical vapor deposition reactor for deposition of platinum on a substrate mounted in the CVD reactor.
摘要翻译：一种铂源试剂液体溶液，其包含：（i）至少一种铂源化合物，其选自下式的化合物：（A）RCpPt（IV）R'3化合物，其具有下式：其中： R选自氢，甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 并且每个R'独立地选自甲基，乙基，异丙基，正丙基，正丁基，异丁基，叔丁基，三甲基甲硅烷基和三甲基甲硅烷基甲基; 和（B）下式的Pt（β-二酮化合物）2：其中：每个R“独立地选自甲基，乙基，正丙基，异丙基，正丁基，异丙基，丁基，叔丁基，三氟甲基，全氟乙基和全氟正丙基，和（ii）其溶剂介质。本发明的铂源试剂液体溶液容易地用于包括用于挥发源试剂液体溶液并将所得蒸气输送到化学气相沉积反应器的液体输送装置的化学气相沉积工艺系统中，以将铂沉积在安装的基板上在CVD反应器中。

8. 发明授权

US5840897A Metal complex source reagents for chemical vapor deposition 失效
标题翻译：用于化学气相沉积的金属复合源试剂
公开(公告)号：US5840897A
公开(公告)日：1998-11-24
申请号：US477797
申请日：1995-06-07
申请人： Peter S. Kirlin , Duncan W. Brown , Thomas H. Baum , Brian A. Vaarstra , Robin A. Gardiner
发明人： Peter S. Kirlin , Duncan W. Brown , Thomas H. Baum , Brian A. Vaarstra , Robin A. Gardiner
IPC分类号： H01L21/31 , C07F1/08 , C07F3/00 , C07F3/04 , C07F5/00 , C07F7/00 , C07F7/28 , C07F9/00 , C07F11/00 , C07F19/00 , C23C16/00 , C23C16/18 , C23C16/30 , C23C16/40 , C23C16/448 , G01T5/08 , G02B6/02 , G02B6/036 , H01L39/24 , C07F15/00 , C07D213/22
CPC分类号： C23C16/18 , C07F19/005 , C07F3/003 , C07F5/003 , C07F7/006 , C07F9/005 , C23C16/30 , C23C16/305 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A metalorganic complex of the formula: MA.sub.y X wherein: M is a y-valent metal; A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X; y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases. X may for example comprise a ligand such as tetraglyme, tetrahydrofuran, bipyridine, crown ether, or thioether.
摘要翻译：下式的金属有机络合物：其中：M为Y价金属; A是与M配位的单齿或多齿有机配体，其允许将MAy与X配位; y是值为2,3或4的整数; 每个A配体可以相同或不同; 并且X是与M配位并含有独立地选自元素C，N，H，S，O和F的原子的一个或多个原子的单齿或多齿配体。金属M可以选自的Cu，Ba，Sr，La，Nd，Ce，Pr，Sm，Eu，Th，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Bi，Tl，Y，Pb，Ni，，Al，Ga，In，Ag，Au，Co，Rh，Ir，Fe，Ru，Sn，Li，Na，K，Rb，Cs，Ca，Mg，Ti，Zr，Hf，V，Nb，Ta，Cr ，Mo和W.A可以选自β-二酮类及其硫和氮类似物，β-酮酯及其硫和氮类似物，环戊二烯基，烷基，全氟烷基，醇盐，全氟烷氧化物和席夫碱。 X可以例如包括配体如四甘醇二甲醚，四氢呋喃，联吡啶，冠醚或硫醚。

9. 发明授权

US06709610B2 Isotropic dry cleaning process for noble metal integrated circuit structures 失效
标题翻译：贵金属集成电路结构各向同性干洗工艺
公开(公告)号：US06709610B2
公开(公告)日：2004-03-23
申请号：US09768494
申请日：2001-01-24
申请人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter S. Kirlin , Thomas H. Baum
发明人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter S. Kirlin , Thomas H. Baum
IPC分类号： C23F130
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
摘要翻译：通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。

10. 发明授权

US06846424B2 Plasma-assisted dry etching of noble metal-based materials 有权
标题翻译：贵金属材料等离子体辅助干法蚀刻
公开(公告)号：US06846424B2
公开(公告)日：2005-01-25
申请号：US09874102
申请日：2001-06-05
申请人： Thomas H. Baum , Phillip Chen , Frank DiMeo, Jr. , Peter C. Van Buskirk , Peter S. Kirlin
发明人： Thomas H. Baum , Phillip Chen , Frank DiMeo, Jr. , Peter C. Van Buskirk , Peter S. Kirlin
IPC分类号： C07F15/00 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , H01L21/02 , H01L21/3213 , H01L21/00
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/32136 , H01L28/55
摘要： A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation involving energization of one or more halogenated organic and/or inorganic substance, and the etchant medium including such etch species and oxidizing gas is contacted with the noble metal-based material under etching conditions. The plasma formation and the contacting of the plasma with the noble metal-based material can be carried out in a downstream microwave processing system to provide processing suitable for high-rate fabrication of microelectronic devices and precursor structures in which the noble metal forms an electrode, or other conductive element or feature of the product article.
摘要翻译：用于去除和/或干蚀刻贵金属基材料结构的方法，例如用于微电子器件的电极形成的铱。通过涉及一种或多种卤化有机和/或无机物质的激发的等离子体生成来提供蚀刻物质，并且在蚀刻条件下，包括这种蚀刻物质的蚀刻剂介质和氧化气体与贵金属基材料接触。等离子体形成和等离子体与贵金属基材料的接触可以在下游微波处理系统中进行，以提供适合于高贵率制造贵金属形成电极的微电子器件和前体结构的处理，或其他导电元件或产品制品的特征。

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