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    • 5. 发明授权
    • Method to reduce microloading in metal etching
    • 在金属蚀刻中减少微载荷的方法
    • US06548413B1
    • 2003-04-15
    • US09048208
    • 1998-03-26
    • Paul Kwok Keung HoThomas SchulueRaymond JoyWai Lok LeeRamasamy ChockalingamBa Tuan PhamPremachandran Vayalakkara
    • Paul Kwok Keung HoThomas SchulueRaymond JoyWai Lok LeeRamasamy ChockalingamBa Tuan PhamPremachandran Vayalakkara
    • H01L21302
    • H01L21/32136
    • A new method of etching metal lines with reduced microloading effect is described. Semiconductor device structures are provided in and on a semiconductor substrate and covered with an insulating layer. A barrier metal layer is deposited overlying the insulating layer and a metal layer is deposited overlying the barrier metal layer. The metal layer is covered with a photoresist mask wherein there are both wide spaces and narrow spaces between portions of the photoresist mask. The metal layer is etched away where it is not covered by the photoresist mask wherein the barrier metal layer is reached within the wide spaces while some of the metal layer remains within the narrow spaces. The metal layer remaining within the narrow spaces is selectively etched away. Thereafter, the barrier metal layer not covered by the photoresist mask is etched away wherein the insulating layer is reached within the wide spaces while some of the barrier metal layer remains within the narrow spaces. The barrier metal layer remaining within the narrow spaces is selectively etched away. Thereafter, the insulating layer not covered by the photoresist mask is overetched to complete the metal lines without microloading in the fabrication of an integrated circuit.
    • 描述了一种蚀刻具有减少的微加载效应的金属线的新方法。 半导体器件结构设置在半导体衬底中并在半导体衬底上并被绝缘层覆盖。 沉积覆盖在绝缘层上的阻挡金属层,并且沉积覆盖阻挡金属层的金属层。 金属层被光致抗蚀剂掩模覆盖,其中在光致抗蚀剂掩模的部分之间存在宽的空间和狭窄的空间。 金属层被蚀刻掉,其中它不被光致抗蚀剂掩模覆盖,其中阻挡金属层在宽空间内到达,而一些金属层保留在狭窄的空间内。 残留在狭窄空间内的金属层被有选择地蚀刻掉。 此后,蚀刻掉未被光致抗蚀剂掩模覆盖的阻挡金属层,其中绝缘层在宽空间内到达,而一些阻挡金属层保留在狭窄的空间内。 残留在狭窄空间内的阻挡金属层被有选择地蚀刻掉。 此后,在制造集成电路的过程中,将未被光致抗蚀剂掩模覆盖的绝缘层进行过蚀刻以完成金属线而无需微加载。
    • 6. 发明授权
    • Method to deposit a copper layer
    • 沉积铜层的方法
    • US06261954B1
    • 2001-07-17
    • US09501968
    • 2000-02-10
    • Paul Kwok Keung HoSubhash GuptaMei Sheng ZhouSimon Chooi
    • Paul Kwok Keung HoSubhash GuptaMei Sheng ZhouSimon Chooi
    • H01L2144
    • H01L21/76843C23C18/1608C25D7/123H01L21/288H01L21/76873H01L21/76874H01L21/76877
    • A new method of depositing a copper layer, using disproportionation of Cu(I) ions from a solution stabilized by a polar organic solvent, for single and dual damascene interconnects in the manufacture of an integrated circuit device has been achieved. A dielectric layer, which may comprise a stack of dielectric material, is provided overlying a semiconductor substrate. The dielectric layer is patterned to form vias and trenches for planned dual damascene interconnects. A barrier layer is deposited overlying the dielectric layer to line the vias and trenches. A simple Cu(I) ion solution, stabilized by a polar organic solvent, is coated overlying said barrier layer. Water is added to the stabilized simple Cu(I) ion solution to cause disproportionation of the simple Cu(I) ion from the Cu(I) ion solution. A copper layer is deposited overlying the barrier layer. The copper layer may comprise a thin seed layer for use in subsequent electroplating or electroless plating of copper or may comprise a thick copper layer to fill the vias and trenches. The integrated circuit is completed.
    • 已经实现了在制造集成电路器件中使用Cu(I)离子从由极性有机溶剂稳定的溶液中进行歧化的单层和双镶嵌互连的沉积铜层的新方法。 提供覆盖在半导体衬底上的介电层,其可以包括电介质材料的叠层。 图案化电介质层以形成用于计划的双镶嵌互连的通孔和沟槽。 沉积覆盖在介电层上的阻挡层以对通孔和沟槽进行排列。 将由极性有机溶剂稳定的简单的Cu(I)离子溶液涂覆在所述阻挡层上。 向稳定化的简单的Cu(I)离子溶液中加入水以引起Cu(I)离子溶液中简单的Cu(I)离子的歧化。 沉积在屏障层上的铜层。 铜层可以包括用于铜的后续电镀或无电镀的薄种子层,或者可以包括用于填充通孔和沟槽的厚铜层。 集成电路完成。
    • 9. 发明授权
    • Redundancy in routing devices
    • 路由设备冗余
    • US07549078B2
    • 2009-06-16
    • US11345259
    • 2006-01-31
    • Kendall HarveyPaul Kwok
    • Kendall HarveyPaul Kwok
    • G06F11/00
    • G06F11/2038G06F11/2097H04L45/04H04L45/22H04L45/28H04L45/58H04L69/16H04L69/163H04L69/40
    • Providing redundancy between an active component and a standby component in a network router comprises maintaining a first route input information base associated with the active component, synchronizing with the first route information base a second route input information base associated with the standby component, generating a route output information base using the second route input information base, and comparing the generated route output information base, in the event of switchover of the standby component to an active mode, to a synchronized route output information base associated with the standby component which synchronized route output information base reflects routes known to have been shared with one or more peers by the active component prior to the switchover, and sharing and/or withdrawing routes as necessary to reflect any differences between the generated route output information base and the synchronized route output information base.
    • 在网络路由器中提供活动组件和备用组件之间的冗余包括维护与活动组件相关联的第一路由输入信息库,与第一路由信息库同步与备用组件相关联的第二路由输入信息库,生成路由 输出信息库,并且在备用组件切换到活动模式的情况下,将生成的路径输出信息库与备用组件相关联的同步路径输出信息库进行比较,所述备用组件同步路由输出 信息库反映在切换之前被活动组件已知与一个或多个对等体共享的路由,并且根据需要共享和/或撤销路由以反映生成的路由输出信息库与同步路由输出信息库之间的任何差异 。