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1. 发明申请

WO2006077390A1 IMPROVED METHOD AND APPARATUS FOR MONITORING A MICROSTRUCTURE ETCHING PROCESS 审中-公开
标题翻译：用于监测微结构蚀刻过程的改进方法和装置
公开(公告)号：WO2006077390A1
公开(公告)日：2006-07-27
申请号：PCT/GB2006/000140
申请日：2006-01-17
申请人： POINT 35 MICROSTRUCTURES LIMITED , O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme
发明人： O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme
IPC分类号： H01J37/32 , C23F4/02 , H01L21/32
CPC分类号： H01J37/32935 , B81C1/00476 , B81C99/0065 , B81C2201/0138
摘要： An etching monitoring apparatus (1) and related method for use in the manufacture of microstructures (2) (and in particular MEMS) located within an etching chamber (3) is described. The apparatus (1) and related method operates by setting the temperature of the chamber (3) within which the microstructure (2) is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber (3) at a constant value. As a result the surface temperature o f the microstructure (2) within the chamber (3) is primarily determined by the etch rate. Therefore, by employing a thermometer (8) to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.
摘要翻译：描述了一种用于制造位于蚀刻室（3）内的微结构（2）（特别是MEMS）的蚀刻监测装置（1）和相关方法。设备（1）和相关方法通过将微结构（2）所在的室（3）的温度设定在起始温度并将室内（3）内的蚀刻气体的分压维持在恒定值。结果，室（3）内的微结构（2）的表面温度主要由蚀刻速率决定。因此，通过使用温度计（8）来监测蚀刻表面温度的变化，提供了用于监测蚀刻工艺的直接诊断。

2. 发明申请

WO2012042263A1 A LINER 审中-公开
标题翻译：一个LINER
公开(公告)号：WO2012042263A1
公开(公告)日：2012-04-05
申请号：PCT/GB2011/051840
申请日：2011-09-28
申请人： NORTHSTONE (NI) LIMITED , PRINGLE, Graeme James , CASSIDY, Lee
发明人： PRINGLE, Graeme James , CASSIDY, Lee
IPC分类号： E02D29/12
CPC分类号： E02D29/12 , E02D29/121 , E02D29/124 , E02D29/125
摘要： A stackable section (1) which, may be stacked with other sections (1) to form a liner (200) for a manhole chamber. The stackable section (1) has an inner (11) and outer (13) skin and at least a part of the stackable section (1) has two webs (21, 23) extending in a direction generally perpendicular to the stacking direction At least one web (21, 23) may extend between the inner (11) and outer (13) skins. The stackable section (1) may define a perimeter having two ends and at least one web or a combination of webs (21, 23) may extend over a majority of the distance between the two ends. The stackable section may comprise four straight pieces (3) and four curved pieces (9) arranged to form a substantially rectangular perimeter. At least one piece (3) may be made by pultrusion.
摘要翻译：可叠置的部分（1），其可以与其他部分（1）堆叠以形成用于人孔腔室的衬垫（200）。可堆叠部分（1）具有内部（11）和外部（13）表皮，并且可堆叠部分（1）的至少一部分具有沿大致垂直于层叠方向的方向延伸的两个腹板（21,23）至少一个腹板（21,23）可以在内部（11）和外部（13）表面之间延伸。可堆叠部分（1）可以限定具有两个端部的周边，并且至少一个腹板或腹板（21,23）的组合可以在两端之间的距离的大部分上延伸。可堆叠部分可以包括四个直的片（3）和四个弯曲片（9），其被布置成形成大致矩形的周边。至少一件（3）可以通过拉挤成型制成。

3. 发明申请

WO2005124827A3 IMPROVED METHOD AND APPARATUS FOR THE ETCHING OF MICROSTRUCTURES 审中-公开
标题翻译：用于微结构蚀刻的改进方法和装置
公开(公告)号：WO2005124827A3
公开(公告)日：2006-06-08
申请号：PCT/GB2005002386
申请日：2005-06-17
申请人： POINT 35 MICROSTRUCTURES LTD , O'HARA ANTHONY , LEAVY MICHAEL , PRINGLE GRAEME , MCKIE ANTHONY
发明人： O'HARA ANTHONY , LEAVY MICHAEL , PRINGLE GRAEME , MCKIE ANTHONY
IPC分类号： H01L21/00 , B01D7/00 , B81B3/00 , B81C1/00 , C23C16/448 , C23F1/00 , C23F1/12 , H01J37/32
CPC分类号： H01L21/67069 , B01D7/00 , C23F1/00 , C23F1/12 , H01J37/3244 , H01J37/32522 , H01L21/67017
摘要： There is provided an apparatus (9) and method for providing an etching gas source (10) for etching one or more microstructures located within a process chamber (11). The apparatus has a gas source supply line (12) attached to a gas source (26) and one or more chambers (27) for containing an etching material (28). In use, the etching material (28) is transformed into an etching material vapour within one or more of the chambers (27), and the gas supply line (12) provides a means for supplying a carrier gas to the etching material vapour and thereafter for supplying the etching material vapour transported by the carrier gas to the process chamber (11). Advantageously, the apparatus (9) of the invention does not require the incorporation of any expansion chambers or other complicated mechanical features in order to achieve a continuous flow of etching gas.
摘要翻译：提供了一种用于提供用于蚀刻位于处理室（11）内的一个或多个微结构的蚀刻气体源（10）的设备（9）和方法。该装置具有附接到气体源（26）和用于容纳蚀刻材料（28）的一个或多个室（27）的气体源供应管线（12）。在使用中，蚀刻材料（28）在一个或多个室（27）内被转化为蚀刻材料蒸气，并且气体供应管线（12）提供用于将载气供应到蚀刻材料蒸气的装置用于将由载气输送的蚀刻材料蒸气供给到处理室（11）。有利地，本发明的设备（9）不需要结合任何膨胀室或其他复杂的机械特征，以实现连续的蚀刻气体流。

4. 发明申请

WO2005124827A2 IMPROVED METHOD AND APPARATUS FOR THE ETCHING OF MICROSTRUCTURES 审中-公开
标题翻译：用于微结构蚀刻的改进方法和装置
公开(公告)号：WO2005124827A2
公开(公告)日：2005-12-29
申请号：PCT/GB2005/002386
申请日：2005-06-17
申请人： POINT 35 MICROSTRUCTURES LIMITED , O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme , McKIE, Anthony
发明人： O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme , McKIE, Anthony
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , B01D7/00 , C23F1/00 , C23F1/12 , H01J37/3244 , H01J37/32522 , H01L21/67017
摘要： An apparatus and method for providing an etching gas source for etching one or more microstructures located within a process chamber. The apparatus has a gas source supply line attached to a gas source and one or more chambers for containing an etching material. In use, the etching material is transformed into an etching material vapour within one or more of the chambers and the gas supply line provides a supply of carrier gas to the etching material vapour and also supplies the etching material vapour transported by the carrier gas to the process chamber. Advantageously, the apparatus of the invention does not require the incorporation of any expansion chambers or other complicated mechanical features in order to achieve a continuous flow of etching gas.
摘要翻译：一种用于提供用于蚀刻位于处理室内的一个或多个微结构的蚀刻气体源的装置和方法。该装置具有附接到气体源的气体源供应管线和用于容纳蚀刻材料的一个或多个室。在使用中，蚀刻材料被转化成一个或多个室内的蚀刻材料蒸气，并且气体供应管线为蚀刻材料蒸气提供载气，并且还将由载气输送的蚀刻材料蒸气供给到处理室。有利地，本发明的装置不需要引入任何膨胀室或其它复杂的机械特征，以实现连续的蚀刻气体流。

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