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1. 发明申请

WO2005124827A3 IMPROVED METHOD AND APPARATUS FOR THE ETCHING OF MICROSTRUCTURES 审中-公开
标题翻译：用于微结构蚀刻的改进方法和装置
公开(公告)号：WO2005124827A3
公开(公告)日：2006-06-08
申请号：PCT/GB2005002386
申请日：2005-06-17
申请人： POINT 35 MICROSTRUCTURES LTD , O'HARA ANTHONY , LEAVY MICHAEL , PRINGLE GRAEME , MCKIE ANTHONY
发明人： O'HARA ANTHONY , LEAVY MICHAEL , PRINGLE GRAEME , MCKIE ANTHONY
IPC分类号： H01L21/00 , B01D7/00 , B81B3/00 , B81C1/00 , C23C16/448 , C23F1/00 , C23F1/12 , H01J37/32
CPC分类号： H01L21/67069 , B01D7/00 , C23F1/00 , C23F1/12 , H01J37/3244 , H01J37/32522 , H01L21/67017
摘要： There is provided an apparatus (9) and method for providing an etching gas source (10) for etching one or more microstructures located within a process chamber (11). The apparatus has a gas source supply line (12) attached to a gas source (26) and one or more chambers (27) for containing an etching material (28). In use, the etching material (28) is transformed into an etching material vapour within one or more of the chambers (27), and the gas supply line (12) provides a means for supplying a carrier gas to the etching material vapour and thereafter for supplying the etching material vapour transported by the carrier gas to the process chamber (11). Advantageously, the apparatus (9) of the invention does not require the incorporation of any expansion chambers or other complicated mechanical features in order to achieve a continuous flow of etching gas.
摘要翻译：提供了一种用于提供用于蚀刻位于处理室（11）内的一个或多个微结构的蚀刻气体源（10）的设备（9）和方法。该装置具有附接到气体源（26）和用于容纳蚀刻材料（28）的一个或多个室（27）的气体源供应管线（12）。在使用中，蚀刻材料（28）在一个或多个室（27）内被转化为蚀刻材料蒸气，并且气体供应管线（12）提供用于将载气供应到蚀刻材料蒸气的装置用于将由载气输送的蚀刻材料蒸气供给到处理室（11）。有利地，本发明的设备（9）不需要结合任何膨胀室或其他复杂的机械特征，以实现连续的蚀刻气体流。

2. 发明专利

GB0615343D0 Improved etch process 未知
公开(公告)号：GB0615343D0
公开(公告)日：2006-09-13
申请号：GB0615343
申请日：2006-08-02
申请人： POINT 35 MICROSTRUCTURES LTD
摘要： A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapor in a process chamber having controlled temperature and pressure conditions. A by-product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

3. 发明专利

GB0413554D0 Improved method and apparartus for the etching of microstructures 未知
公开(公告)号：GB0413554D0
公开(公告)日：2004-07-21
申请号：GB0413554
申请日：2004-06-17
申请人： POINT 35 MICROSTRUCTURES LTD
IPC分类号： B01D7/00 , C23F1/00 , C23F1/12 , H01L21/00
摘要： An apparatus and method for providing an etching gas source for etching one or more microstructures located within a process chamber. the apparatus has a gas source supply line attached to a gas source and one or more chambers for containing an etching material. In use, the etching material is transformed into an etching material vapor within one or more of the chamber and the gas supply line provides a supply of carrier gas to the etching material vapor and also supplies the etching material vapor transported by the carrier gas to the process chamber. Advantageously, the apparatus of the invention does not require the incorporation of any expansion chambers or other complicated mechanical features in order to achieve a continuous flow of etching gas.

4. 发明专利

ES2375513T3 PROCEDIMIENTO DE ATAQUE DE UNA CAPA DE SACRIFICIO DE OXIDO DE SILICIO. 未知
公开(公告)号：ES2375513T3
公开(公告)日：2012-03-01
申请号：ES07789096
申请日：2007-08-02
申请人： POINT 35 MICROSTRUCTURES LTD , MEMSSTAR LTD
发明人： O'HARA ANTHONY
IPC分类号： B81C1/00
摘要： Un procedimiento de liberación, en un proceso de ataque, de una microestructura (1) que comprende una capa (2) de óxido de silicio situada entre una capa (3) de sustrato y una capa (4) que se va a liberar desde la capa (2) de óxido de silicio, comprendiendo el procedimiento: exponer la capa (2) de óxido de silicio a un vapor de fluoruro de hidrógeno en una cámara de proceso; y controlar los parámetros de la cámara incluyendo la presión parcial del vapor de fluoruro de hidrógeno, la presión parcial de agua, la presión de la cámara y la temperatura de la microestructura (1) que se va a atacar; en el que dichos parámetros de la cámara se controlan para garantizar que una capa (5) de líquido condensado que comprende agua y fluoruro de hidrógeno se forme únicamente sobre la capa (2) de óxido de silicio; y en el que dichos parámetros de la cámara se controlan además para garantizar que la fuente primaria de agua en la capa (5) de líquido condensado es un subproducto de la reacción entre la capa (5) de líquido condensado y la capa (2) de óxido de silicio, restringiendo de este modo el proceso de ataque a la capa (2) de óxido de silicio.

5. 发明专利

GB2473851A Etching silicon 未知
公开(公告)号：GB2473851A
公开(公告)日：2011-03-30
申请号：GB0916871
申请日：2009-09-25
申请人： POINT 35 MICROSTRUCTURES LTD , MEMSSTAR LTD
发明人： O'HARA ANTHONY
IPC分类号： B81C1/00 , H01L21/306 , H01L21/308
摘要： A method and an apparatus for etching microstructures that provides improved selectivity to surrounding materials such as silicon nitride when etching silicon isotropically by using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber. The method may be used for fabricating MEMS structures.

6. 发明专利

GB0500980D0 Improved method and apparatus for monitoring a microstructure etching process 未知
公开(公告)号：GB0500980D0
公开(公告)日：2005-02-23
申请号：GB0500980
申请日：2005-01-18
申请人： POINT 35 MICROSTRUCTURES LTD
IPC分类号： B81C99/00 , H01J37/32
摘要： An etching monitoring apparatus and related method for use in the manufacture of microstructures (and in particular MEMS) located within an etching chamber is described. The apparatus and related method operates by setting the temperature of the chamber within which the microstructure is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber at a constant value. As a result the surface temperature of the micro structure within the chamber is primarily determined by the etch rate. Therefore, by employing a thermometer to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.

7. 发明专利

GB0916871D0 Improved selectivity in a xenon difluoride etch process 未知
公开(公告)号：GB0916871D0
公开(公告)日：2009-11-11
申请号：GB0916871
申请日：2009-09-25
申请人： POINT 35 MICROSTRUCTURES LTD

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