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1. 发明申请

WO2011036496A1 IMPROVED SELECTIVITY IN A XENON DIFLUORIDE ETCH PROCESS 审中-公开
标题翻译：在XENON DIFLUORIDE ETCH PROCESS中改进选择性
公开(公告)号：WO2011036496A1
公开(公告)日：2011-03-31
申请号：PCT/GB2010/051611
申请日：2010-09-27
申请人： MEMSSTAR LIMITED , O'HARA, Anthony
发明人： O'HARA, Anthony
IPC分类号： B81C1/00 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/67069 , B81C1/00595 , B81C2201/0132 , H01L21/3065
摘要： A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber.
摘要翻译：一种用于蚀刻微结构等的方法和装置，其在使用氙二氟化物（XeF2）蚀刻硅时提供对周围材料的改进的选择性。通过向处理室中加入氢，大大提高了蚀刻选择性。

2. 发明申请

WO2008015434A1 METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER 审中-公开
标题翻译：腐蚀氧化硅层的方法
公开(公告)号：WO2008015434A1
公开(公告)日：2008-02-07
申请号：PCT/GB2007/002932
申请日：2007-08-02
申请人： POINT 35 MICROSTRUCTURES LIMITED , O'HARA, Anthony
发明人： O'HARA, Anthony
IPC分类号： B81C1/00
CPC分类号： B81C1/00476 , B81C2201/0133
摘要： A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by- product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.
摘要翻译：描述了释放包括位于衬底层和要从氧化硅层释放的层之间的氧化硅层的微结构的控制方法。该方法包括在具有受控温度和压力条件的处理室中将氧化硅层暴露于氟化氢蒸汽的步骤。该反应的副产物是还用作蚀刻工艺的催化剂的水。控制这种固有水源的使用，导致仅在氧化物层的暴露表面上形成冷凝的流体层，并且因此进行蚀刻。因此，所描述的方法降低了在微结构和处理室本身内的蚀刻微结构内的毛细管诱导静电和/或腐蚀的影响的风险。

3. 发明申请

WO2005124827A3 IMPROVED METHOD AND APPARATUS FOR THE ETCHING OF MICROSTRUCTURES 审中-公开
标题翻译：用于微结构蚀刻的改进方法和装置
公开(公告)号：WO2005124827A3
公开(公告)日：2006-06-08
申请号：PCT/GB2005002386
申请日：2005-06-17
申请人： POINT 35 MICROSTRUCTURES LTD , O'HARA ANTHONY , LEAVY MICHAEL , PRINGLE GRAEME , MCKIE ANTHONY
发明人： O'HARA ANTHONY , LEAVY MICHAEL , PRINGLE GRAEME , MCKIE ANTHONY
IPC分类号： H01L21/00 , B01D7/00 , B81B3/00 , B81C1/00 , C23C16/448 , C23F1/00 , C23F1/12 , H01J37/32
CPC分类号： H01L21/67069 , B01D7/00 , C23F1/00 , C23F1/12 , H01J37/3244 , H01J37/32522 , H01L21/67017
摘要： There is provided an apparatus (9) and method for providing an etching gas source (10) for etching one or more microstructures located within a process chamber (11). The apparatus has a gas source supply line (12) attached to a gas source (26) and one or more chambers (27) for containing an etching material (28). In use, the etching material (28) is transformed into an etching material vapour within one or more of the chambers (27), and the gas supply line (12) provides a means for supplying a carrier gas to the etching material vapour and thereafter for supplying the etching material vapour transported by the carrier gas to the process chamber (11). Advantageously, the apparatus (9) of the invention does not require the incorporation of any expansion chambers or other complicated mechanical features in order to achieve a continuous flow of etching gas.
摘要翻译：提供了一种用于提供用于蚀刻位于处理室（11）内的一个或多个微结构的蚀刻气体源（10）的设备（9）和方法。该装置具有附接到气体源（26）和用于容纳蚀刻材料（28）的一个或多个室（27）的气体源供应管线（12）。在使用中，蚀刻材料（28）在一个或多个室（27）内被转化为蚀刻材料蒸气，并且气体供应管线（12）提供用于将载气供应到蚀刻材料蒸气的装置用于将由载气输送的蚀刻材料蒸气供给到处理室（11）。有利地，本发明的设备（9）不需要结合任何膨胀室或其他复杂的机械特征，以实现连续的蚀刻气体流。

4. 发明申请

WO2005124827A2 IMPROVED METHOD AND APPARATUS FOR THE ETCHING OF MICROSTRUCTURES 审中-公开
标题翻译：用于微结构蚀刻的改进方法和装置
公开(公告)号：WO2005124827A2
公开(公告)日：2005-12-29
申请号：PCT/GB2005/002386
申请日：2005-06-17
申请人： POINT 35 MICROSTRUCTURES LIMITED , O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme , McKIE, Anthony
发明人： O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme , McKIE, Anthony
IPC分类号： H01L21/00
CPC分类号： H01L21/67069 , B01D7/00 , C23F1/00 , C23F1/12 , H01J37/3244 , H01J37/32522 , H01L21/67017
摘要： An apparatus and method for providing an etching gas source for etching one or more microstructures located within a process chamber. The apparatus has a gas source supply line attached to a gas source and one or more chambers for containing an etching material. In use, the etching material is transformed into an etching material vapour within one or more of the chambers and the gas supply line provides a supply of carrier gas to the etching material vapour and also supplies the etching material vapour transported by the carrier gas to the process chamber. Advantageously, the apparatus of the invention does not require the incorporation of any expansion chambers or other complicated mechanical features in order to achieve a continuous flow of etching gas.
摘要翻译：一种用于提供用于蚀刻位于处理室内的一个或多个微结构的蚀刻气体源的装置和方法。该装置具有附接到气体源的气体源供应管线和用于容纳蚀刻材料的一个或多个室。在使用中，蚀刻材料被转化成一个或多个室内的蚀刻材料蒸气，并且气体供应管线为蚀刻材料蒸气提供载气，并且还将由载气输送的蚀刻材料蒸气供给到处理室。有利地，本发明的装置不需要引入任何膨胀室或其它复杂的机械特征，以实现连续的蚀刻气体流。

5. 发明申请

WO2006077390A1 IMPROVED METHOD AND APPARATUS FOR MONITORING A MICROSTRUCTURE ETCHING PROCESS 审中-公开
标题翻译：用于监测微结构蚀刻过程的改进方法和装置
公开(公告)号：WO2006077390A1
公开(公告)日：2006-07-27
申请号：PCT/GB2006/000140
申请日：2006-01-17
申请人： POINT 35 MICROSTRUCTURES LIMITED , O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme
发明人： O'HARA, Anthony , LEAVY, Michael , PRINGLE, Graeme
IPC分类号： H01J37/32 , C23F4/02 , H01L21/32
CPC分类号： H01J37/32935 , B81C1/00476 , B81C99/0065 , B81C2201/0138
摘要： An etching monitoring apparatus (1) and related method for use in the manufacture of microstructures (2) (and in particular MEMS) located within an etching chamber (3) is described. The apparatus (1) and related method operates by setting the temperature of the chamber (3) within which the microstructure (2) is located at a starting temperature, and maintaining the partial pressure of an etching gas within the chamber (3) at a constant value. As a result the surface temperature o f the microstructure (2) within the chamber (3) is primarily determined by the etch rate. Therefore, by employing a thermometer (8) to monitor the change in etching surface temperature, a direct diagnostic for monitoring the etching process is provided.
摘要翻译：描述了一种用于制造位于蚀刻室（3）内的微结构（2）（特别是MEMS）的蚀刻监测装置（1）和相关方法。设备（1）和相关方法通过将微结构（2）所在的室（3）的温度设定在起始温度并将室内（3）内的蚀刻气体的分压维持在恒定值。结果，室（3）内的微结构（2）的表面温度主要由蚀刻速率决定。因此，通过使用温度计（8）来监测蚀刻表面温度的变化，提供了用于监测蚀刻工艺的直接诊断。

6. 发明申请

WO2013030576A1 IMPROVED DEPOSITION TECHNIQUE FOR DEPOSITING A COATING ON A DEVICE 审中-公开
标题翻译：改善沉积在设备上的涂层的沉积技术
公开(公告)号：WO2013030576A1
公开(公告)日：2013-03-07
申请号：PCT/GB2012/052127
申请日：2012-08-31
申请人： MEMSSTAR LIMITED , O'HARA, Anthony
发明人： O'HARA, Anthony
IPC分类号： C23C16/44
CPC分类号： B81C1/00952 , B81C1/0038 , B81C2201/112 , C23C16/44
摘要： The present invention describes a deposition method suitable for depositing a coating on a device. The method is particularly suited for depositing a self assembled monolayer (SAM) coating on a micro electro-mechanical structures (MEMS). The method employs carrier gases in order to form a deposition vapour in a process chamber within which the device is located wherein the deposition vapour comprises controlled amounts of a vapour precursor material and a vapour reactant material. Employing the described technique avoids the problematic effects of particulate contamination of the device even when the volumetric ratio of the reactant material to the precursor material is significantly higher than those ratios previously employed in the art. The vapour precursor material can be of a type that provides the MEMS with an anti-stiction coating with the associated vapour reactant material comprising water.
摘要翻译：本发明描述了一种适用于在装置上沉积涂层的沉积方法。该方法特别适用于在微机电结构（MEMS）上沉积自组装单层（SAM）涂层。该方法使用载气，以便在其中设置的处理室中形成沉积蒸气，其中沉积蒸气包含受控量的蒸气前体材料和蒸汽反应物料。即使当反应物材料与前体材料的体积比显着高于本领域中先前使用的比例时，采用所述技术也避免了装置的颗粒污染的有问题的影响。蒸汽前体材料可以是向MEMS提供具有包含水的相关蒸汽反应物材料的抗静电涂层的类型。

7. 发明申请

WO2012101431A1 VAPOUR ETCH OF SILICON DIOXIDE WITH IMPROVED SELECTIVITY 审中-公开
标题翻译：二氧化硅的蒸气蚀刻具有改进的选择性
公开(公告)号：WO2012101431A1
公开(公告)日：2012-08-02
申请号：PCT/GB2012/050144
申请日：2012-01-24
申请人： MEMSSTAR LIMITED , O'HARA, Anthony
发明人： O'HARA, Anthony
IPC分类号： C23F1/44 , B81C1/00 , H01L21/311
CPC分类号： H01L21/30604 , B81C1/00595 , B81C2201/0109 , B81C2201/0132 , H01L21/31116
摘要： The etching of a sacrificial silicon dioxide (SiO 2 ) portion in a microstructure such as a microelectro-mechanical structures (MEMS) by the use an etchant gas, namely hydrogen fluoride (HF) vapour is performed with greater selectivity to other portions within the MEMS, and in particular portions of silicon nitride (Si 3 N 4 ). This is achieved by the addition of a secondary non-etchant gas suitable for increase the ratio of difluoride reactive species (HF 2 _ and H 2 F 2 ) to monofluoride reactive species (F _ , and HF) within the HF vapour. The secondary non-etchant gas may comprise a hydrogen compound gas. The ratio of difluoride reactive species (HF 2 _ and H 2 F 2 ) to the monofluoride reactive species (F _ , and HF) within the HF vapour can also be increased by setting an etch operating temperature to 20°C or below.
摘要翻译：通过使用蚀刻剂气体，即氟化氢（HF）蒸气在诸如微电子机械结构（MEMS）的微结构中蚀刻牺牲二氧化硅（SiO 2）部分，对MEMS内的其它部分具有更高的选择性，特别是氮化硅（Si 3 N 4）的一部分。这通过添加适合于增加HF蒸气中二氟化物反应性物质（HF 2和H 2 F 2）与单氟化物反应性物质（F_和HF）的比例的二次非蚀刻剂气体来实现。次级非蚀刻剂气体可以包括氢化合物气体。通过将蚀刻操作温度设定为20℃以下，也可以提高HF蒸气内的氟化物反应性物质（HF 2和H 2 F 2）与单氟化物反应性物质（F_和HF）的比例。

8. 发明申请

WO2003007413A1 SOLID OXIDE FUEL CELL STACK CONFIGURATION 审中-公开
标题翻译：固体氧化物燃料电池堆栈配置
公开(公告)号：WO2003007413A1
公开(公告)日：2003-01-23
申请号：PCT/AU2002/000941
申请日：2002-07-13
申请人： CERAMIC FUEL CELLS LIMITED , THOMAS, Stephen, Roger, Maitland , O'HARA, Anthony, Graham , HICKEY, Darren, Bawden , LE, Yeesan , LAWRENCE, Jeremy, Carl , KISTAS, Arthur
发明人： THOMAS, Stephen, Roger, Maitland , O'HARA, Anthony, Graham , HICKEY, Darren, Bawden , LE, Yeesan , LAWRENCE, Jeremy, Carl , KISTAS, Arthur
IPC分类号： H01M8/24
CPC分类号： H01M8/2485 , H01M8/04089 , H01M8/2415 , H01M8/2425 , H01M8/2475
摘要： A fuel cell stack (2) comprises a stack (3) of alternating solid oxide fuel cell and gas separator plates within a housing (4). Each fuel cell plate has apertures therethough aligned with corresponding apertures through adjacent separator plates. A first aligned series of apertures in the fuel cell and separator plates opens to the anode side of each fuel cell to form a first manifold (5) for incoming fuel gas. A second aligned series of apertures in the fuel cell and separator plates opens from the anode side of each fuel cell to form a second manifold (6) for exhaust fuel gas. A third manifold (7) for in coming air is formed between the stack (3) and housing (4) and opens to the cathode side of each fuel cell. A fourth manifold (8) for exhaust air is formed between the stack (3) and housing (4) and opens from the cathode side of each fuel cell. In a preferred embodiment a third aligned series of apertures in the plates opens from the anode side of each fuel cell to form a second exhaust fuel gas manifold (6) and a second exhaust air manifold (8) is formed between the stack (3) and housing (4). Sliding fibrous seals (9) are provided are provided between the stack (3) and housing (4) to separate the air manifolds (7) and (8).
摘要翻译：燃料电池堆（2）包括在壳体（4）内的交替固体氧化物燃料电池和气体分离器板的堆叠（3）。每个燃料电池板具有孔，其孔与相应的隔板相对应。燃料电池和分离器板中的第一对齐的一系列孔通向每个燃料电池的阳极侧，以形成用于进入的燃料气体的第一歧管（5）。燃料电池和分离器板中的第二对准的一系列孔从每个燃料电池的阳极侧开口，以形成用于排气燃料气体的第二歧管（6）。用于未来空气的第三歧管（7）形成在堆叠（3）和壳体（4）之间并且通向每个燃料电池的阴极侧。在堆叠（3）和壳体（4）之间形成用于排出空气的第四歧管（8），并从每个燃料电池的阴极侧开口。在优选实施例中，板中的第三对准的孔的一系列孔从每个燃料电池的阳极侧开口以形成第二排气燃料气体歧管（6），并且在堆（3）之间形成第二排气歧管（8）和住房（4）。滑动纤维密封件（9）设置在堆叠（3）和壳体（4）之间以分离空气歧管（7）和（8）。

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