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1. 发明申请

WO2012028704A1 SUBSTRATE HEATING DEVICE 审中-公开
标题翻译：基板加热装置
公开(公告)号：WO2012028704A1
公开(公告)日：2012-03-08
申请号：PCT/EP2011/065168
申请日：2011-09-02
申请人： OERLIKON SOLAR AG, TRÜBBACH , DESPONT, Laurent , POPPELLER, Markus , SCHMOLL, Ralph
发明人： DESPONT, Laurent , POPPELLER, Markus , SCHMOLL, Ralph
IPC分类号： H01L21/67
CPC分类号： H01L21/67103 , H01L21/67109
摘要： The invention relates to a susceptor for supporting a substrate (9) within a vacuum process chamber, comprising a flat surface (11) for placing the substrate (9) thereon such that the substrate (9) is in thermally conductive contact with the surface (11), whereby the susceptor (1) comprises at least three adjacent zones (5, 6, 8), an outer zone (8), a middle zone (6) and an inner zone (5), the zones (5, 6, 8) arranged concentrically around each other and extending along the surface (11), the outer zone (8) completely surrounds the middle zone (6) and the middle zone (6) completely surrounds the inner zone (5), the inner zone (5) comprises at least one inner heating element (13) affecting the inner zone (5), the outer zone (8) comprises at least one outer heating element (19) affecting the outer zone (8), the middle zone (6) exhibits a maximal thickness (15) that is smaller than the minimal thickness (12) of the inner zone (5) and smaller than the minimal thickness (16) of the outer zone (8), each thickness (12, 15, 16) extending perpendicular to the surface (11). Thus, the invention allows for providing a smooth temperature profile over the complete surface (11) area resulting in a highly uniform substrate (9) temperature and thus in an improved thickness (12, 15, 16) uniformity of a coating to be provided e.g. in a chemical vapour deposition process.
摘要翻译：本发明涉及一种用于在真空处理室内支撑衬底（9）的感受体，包括用于将衬底（9）放置在其上的平坦表面（11），使得衬底（9）与表面导热接触由此，基座（1）包括至少三个相邻的区域（5,6,8），外部区域（8），中间区域（6）和内部区域（5），所述区域（5,6），8）彼此同心地布置并沿着表面（11）延伸，外部区域（8）完全包围中间区域（6），中间区域（6）完全包围内部区域（5），内部区域（5）包括影响内部区域（5）的至少一个内部加热元件（13），外部区域（8）包括影响外部区域（8）的至少一个外部加热元件（19），中间区域（6））表现出比内部区域（5）的最小厚度（12）更小并且小于外部区域的最小厚度（16）的最大厚度（15） e（8），垂直于表面（11）延伸的每个厚度（12,15,16）。因此，本发明允许在整个表面（11）区域上提供平滑的温度分布，导致高度均匀的基底（9）温度，从而提供例如提供的涂层的厚度（12,15,16）均匀性。在化学气相沉积工艺中。

2. 发明申请

WO2008106812A1 VACUUM COATING APPARATUS 审中-公开
标题翻译：真空涂装装置
公开(公告)号：WO2008106812A1
公开(公告)日：2008-09-12
申请号：PCT/CH2008/000080
申请日：2008-02-29
申请人： OC OERLIKON BALZERS AG , ZINDEL, Arno , POPPELLER, Markus , ZIMIN, Dmitry , KUHN, Hansjörg , KERSCHBAUMER, Joerg
发明人： ZINDEL, Arno , POPPELLER, Markus , ZIMIN, Dmitry , KUHN, Hansjörg , KERSCHBAUMER, Joerg
IPC分类号： C23C14/56 , C23C14/54 , C23C16/54
CPC分类号： C23C14/568 , C23C14/541 , C23C16/54
摘要： An inline vacuum processing apparatus for processing of substrates in vacuum comprises at least one load-lock chamber (10), at least two subsequent deposition chambers (4-7) to be operated with essentially the same set of coating parameters and at least one unload-lock chamber (10) plus means for transferring, post-processing and/or handling substrates through and in the various chambers. A method for depositing a thin film on a substrate in such processing system comprises the steps of introducing a first substrate into a load-lock chamber, lowering the pressure in said chamber; transferring the substrate into a first deposition chamber; depositing a layer of a first material on said first substrate using a first set of coating parameters; transferring said first substrate into a second, subsequent deposition chamber of said inline system without breaking vacuum and depositing a further layer of said first material on said first substrate using substantially the same set of parameters. Simultaneously to step f) a second substrate is being treated in said inline vacuum system according to step d).
摘要翻译：用于在真空中处理衬底的在线真空处理设备包括至少一个装载锁定室（10），至少两个随后的沉积室（4-7），其基本上具有相同的涂层参数组和至少一个卸载 - 锁定室（10）以及用于通过各室和在各个室中传送，后处理和/或处理基板的装置。一种在这种处理系统中在衬底上沉积薄膜的方法包括以下步骤：将第一衬底引入加载锁定室，降低所述腔室中的压力; 将衬底转移到第一沉积室中; 使用第一组涂层参数在所述第一衬底上沉积第一材料层; 将所述第一衬底转移到所述在线系统的第二后续沉积室中，而不会破坏真空并且使用基本上相同的参数集将所述第一材料的另一层沉积在所述第一衬底上。在步骤f）的同时，根据步骤d）在所述在线真空系统中处理第二衬底。

3. 发明申请

WO2004038774A3 METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED WITH THIS METHOD 审中-公开
公开(公告)号：WO2004038774A3
公开(公告)日：2004-05-06
申请号：PCT/CH2003/000685
申请日：2003-10-22
申请人： UNAXIS BALZERS LTD. , KROLL, Ulrich , BUCHER, Cédric , SCHMITT, Jacques , POPPELLER, Markus , HOLLENSTEIN, Christoph , BALLUTAUD, Juliette , HOWLING, Alan
发明人： KROLL, Ulrich , BUCHER, Cédric , SCHMITT, Jacques , POPPELLER, Markus , HOLLENSTEIN, Christoph , BALLUTAUD, Juliette , HOWLING, Alan
IPC分类号： C23C16/44
摘要： The invention concerns a method for producing a semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer in a single reaction chamber. The deposition steps of these layers are separated by an operation for avoiding the contamination by the doping agent of said another layer. Advantageously, said operation comprises a dosing of the reaction chamber with a compound able to react with the doping agent.

4. 发明申请

WO2010022530A1 METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE OXIDE (TCO) FILMS; PROPERTIES AND APPLICATIONS OF SUCH FILMS 审中-公开
标题翻译：制造透明导电氧化物（TCO）膜的方法; 这种膜的性质和应用
公开(公告)号：WO2010022530A1
公开(公告)日：2010-03-04
申请号：PCT/CH2009/000291
申请日：2009-08-28
申请人： OERLIKON SOLAR IP AG, TRÜBBACH , DIMITRY, Zimin , ZINDEL, Arno , TEREN, Andrew , WATKINS, Owan Charles , DESPONT, Laurent , WIDER, Joachim , RAMOINO, Luca , GOSSLA, Mario , VOGLER, Benjamin , KERSCHBAUMER, Joerg , SCHNEIDER, Stefan , MARK, Andreas , POPPELLER, Markus , KUHN, Hansjoerg , BORRELLO, Daniel , BENAGLI, Stefano , MEIER, Johannes , KROLL, Ulrich , VALLAT-SAUVAIN, Evelyne
发明人： DIMITRY, Zimin , ZINDEL, Arno , TEREN, Andrew , WATKINS, Owan Charles , DESPONT, Laurent , WIDER, Joachim , RAMOINO, Luca , GOSSLA, Mario , VOGLER, Benjamin , KERSCHBAUMER, Joerg , SCHNEIDER, Stefan , MARK, Andreas , POPPELLER, Markus , KUHN, Hansjoerg , BORRELLO, Daniel , BENAGLI, Stefano , MEIER, Johannes , KROLL, Ulrich , VALLAT-SAUVAIN, Evelyne
IPC分类号： C23C16/40 , C23C16/44 , H01L31/0224 , H01L31/0392 , H01L31/18 , H01L21/365
CPC分类号： C23C16/407 , C23C16/44 , H01L21/02422 , H01L21/02554 , H01L21/02573 , H01L21/0262 , H01L31/022483 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： A method for manufacturing a boron doped, transparent, conductive zinc oxide layer from on a substrate is disclosed. The layer is being deposited from at least diethylzinc, water and diborane by low pressure chemical vapour deposition (LPCVD) in a process chamber of a deposition system comprising wherein the gas flow ratio of diethylzinc and water is kept between 0.87 and 1.3 and the gas flow ratio of diborane and diethylzinc is being kept between 0.05 and 0.4. The haze of such manufactured layer, measured as ratio of diffuse transmittance to total transmittance at 600nm, is between 10 and 25%.
摘要翻译：公开了一种从衬底上制造硼掺杂的透明导电氧化锌层的方法。该层在沉积系统的处理室中通过低压化学气相沉积（LPCVD）从至少二乙基锌，水和乙硼烷沉积，其中二乙基锌和水的气体流量比保持在0.87和1.3之间，气流乙硼烷和二乙基锌的比例保持在0.05和0.4之间。以600nm处的扩散透射率与总透射率的比率测量的这种制造层的雾度在10％和25％之间。

5. 发明申请

WO2004038774A2 METHOD FOR PRODUCING SEMI-CONDUCTING DEVICES AND DEVICES OBTAINED WITH THIS METHOD 审中-公开
标题翻译：用于生产半导体器件的方法和用该方法获得的器件
公开(公告)号：WO2004038774A2
公开(公告)日：2004-05-06
申请号：PCT/CH0300685
申请日：2003-10-22
申请人： UNAXIS BALZERS LTD , KROLL ULRICH , BUCHER CEDRIC , SCHMITT JACQUES , POPPELLER MARKUS , HOLLENSTEIN CHRISTOPH , BALLUTAUD JULIETTE , HOWLING ALAN
发明人： KROLL ULRICH , BUCHER CEDRIC , SCHMITT JACQUES , POPPELLER MARKUS , HOLLENSTEIN CHRISTOPH , BALLUTAUD JULIETTE , HOWLING ALAN
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/22 , H01L31/0288 , H01L31/075 , H01L31/18 , H01L31/20 , H01L21/20
CPC分类号： H01L21/0242 , H01L21/02491 , H01L21/02529 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2205 , H01L31/0288 , H01L31/075 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The invention concerns a method for producing a semi-conducting device comprising at least a layer doped with a doping agent and a layer of another type deposited on said doped layer in a single reaction chamber. The deposition steps of these layers are separated by an operation for avoiding the contamination by the doping agent of said another layer. Advantageously, said operation comprises a dosing of the reaction chamber with a compound able to react with the doping agent.
摘要翻译：本发明涉及一种用于制造半导体器件的方法，该半导体器件至少包括掺杂有掺杂剂的层和在单个反应室中沉积在所述掺杂层上的另一种类型的层。通过用于避免所述另一层的掺杂剂污染的操作来分离这些层的沉积步骤。有利地，所述操作包括用能够与掺杂剂反应的化合物对反应室进行计量。

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