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1. 发明申请

WO2013154236A1 POLISHING SLURRY AND METHOD OF POLISHING USING THE SAME 审中-公开
标题翻译：抛光浆和使用其抛光方法
公开(公告)号：WO2013154236A1
公开(公告)日：2013-10-17
申请号：PCT/KR2012/007367
申请日：2012-09-14
申请人： UBPRECISION CO., LTD. , PARK, Jea Gun , LEE, Gon Sub , PARK, Jin Hyung , LIM, Jae Hyung , CHO, Jong Young , HWANG, Hee Sub , CUI, Hao
发明人： PARK, Jea Gun , LEE, Gon Sub , PARK, Jin Hyung , LIM, Jae Hyung , CHO, Jong Young , HWANG, Hee Sub , CUI, Hao
IPC分类号： C09K3/14 , H01L21/304
CPC分类号： C23F1/14 , C09G1/02 , C09K3/1409 , H01L21/3212 , H01L21/7684
摘要： Disclosed are a polishing slurry used in a polishing process of tungsten and a method of polishing using the same. The slurry includes an abrasive for performing polishing and an oxidation promoting agent for promoting the formation of an oxide. The abrasive includes titanium oxide particles.
摘要翻译：公开了用于钨的抛光工艺的抛光浆料和使用其的抛光方法。浆料包括用于进行抛光的研磨剂和用于促进氧化物形成的氧化促进剂。研磨剂包括氧化钛颗粒。

2. 发明申请

WO2013024971A3 CMP SLURRY COMPOSITION FOR TUNGSTEN POLISHING 审中-公开
标题翻译： CMP砂浆组合物用于金刚石抛光
公开(公告)号：WO2013024971A3
公开(公告)日：2013-05-30
申请号：PCT/KR2012005397
申请日：2012-07-06
申请人： UBPREC CO LTD , PARK JEA GUN , PARK JIN HYUNG , LIM JAE HYUNG , CHO JONG YOUNG , CHOI HO , HWANG HEE SUB
发明人： PARK JEA GUN , PARK JIN HYUNG , LIM JAE HYUNG , CHO JONG YOUNG , CHOI HO , HWANG HEE SUB
IPC分类号： C09K3/14 , H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/7684
摘要： The present invention relates to a CMP slurry composition for tungsten polishing containing abrasives and polishing accelerators, wherein the abrasive comprises colloidal silica dispersed in ultrapure water and the polishing accelerator comprises aqueous hydrogen peroxide, ammonium persulfate, and ferric nitrate. The slurry composition does not cause a slurry discoloration problem and can be applied to a CMP process due to having excellent etch selectivity.
摘要翻译：本发明涉及含有研磨剂和抛光促进剂的用于钨抛光的CMP浆料组合物，其中磨料包含分散在超纯水中的胶体二氧化硅，抛光促进剂包含过氧化氢水溶液，过硫酸铵和硝酸铁。浆料组合物不会引起浆料变色问题，并且由于具有优异的蚀刻选择性，可以应用于CMP工艺。

3. 发明申请

WO2010131901A2 NON-VOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：WO2010131901A2
公开(公告)日：2010-11-18
申请号：PCT/KR2010003000
申请日：2010-05-12
申请人： IUCF HYU , PARK JEA GUN , LEE GON SUB , SEUNG HYUN MIN , LEE JONG DAE
发明人： PARK JEA GUN , LEE GON SUB , SEUNG HYUN MIN , LEE JONG DAE
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/0036 , H01L51/0591
摘要： The present invention relates to a non-volatile memory device, and provides a non-volatile memory device comprising: a first and a second electrode; an organic layer provided between the first and second electrodes, and including donor material and acceptor material; and a nanocrystal layer consisting of at least one layer provided in the organic layer. In this manner, the present invention enables the manufacture of a memory device produced with a crystal layer formed in the organic layer and including donor material and acceptor material, to increase the electric charge probability of the nanocrystals and to improve the reliability of the device.
摘要翻译：本发明涉及一种非易失性存储器件，并提供一种非易失性存储器件，包括：第一和第二电极; 设置在第一和第二电极之间的有机层，并且包括施主材料和受主材料; 以及由设置在有机层中的至少一层构成的纳米晶层。以这种方式，本发明能够制造由有机层中形成的晶体层制成的包括施主材料和受主材料的存储器件，以增加纳米晶体的电荷概率并提高器件的可靠性。

4. 发明申请

WO2009134089A3 CAPACITOR-LESS MEMORY DEVICE 审中-公开
标题翻译：无电容器存储器件
公开(公告)号：WO2009134089A3
公开(公告)日：2010-02-11
申请号：PCT/KR2009002284
申请日：2009-04-30
申请人： UNIV SOGANG IND UNIV COOP FOUN , PARK JEA-GUN , SHIM TAE-HUN , LEE GON-SUB , KIM SEONG-JE , KIM TAE-HYUN
发明人： PARK JEA-GUN , SHIM TAE-HUN , LEE GON-SUB , KIM SEONG-JE , KIM TAE-HYUN
IPC分类号： H01L21/8242
CPC分类号： H01L29/4234 , G11C11/404 , G11C16/0466 , G11C2211/4016 , H01L27/10802 , H01L29/7841 , H01L29/78687 , H01L29/78696
摘要： The present invention relates to a capacitor-less memory device including a semiconductor substrate, an insulation layer positioned on the semiconductor substrate, a storage region formed in a partial area on the insulation layer, a channel region positioned on the storage region and which has a balance band energy difference from the storage region, a gate insulation film and a gate electrode sequentially formed on the channel region, and a source electrode and a drain electrode connected to the channel region and positioned at both side regions of the gate electrode. As described above, the storage region having a balance band energy different from that of the channel region is arranged below the channel region such that charges trapped in the storage region may not be easily escaped, thus increasing a charge retention period and enhancing an information storage capability.
摘要翻译：本发明涉及一种无电容器的存储器件，其包括半导体衬底，位于半导体衬底上的绝缘层，形成在绝缘层的局部区域中的存储区域，位于存储区域上的沟道区域，与沟道区域顺序地形成的栅极绝缘膜和栅电极以及连接到沟道区并位于栅电极的两侧区域的源电极和漏电极的平衡带能量差。如上所述，具有与沟道区域不同的平衡带能量的存储区域布置在沟道区域的下方，使得被捕获在存储区域中的电荷可能不容易逸出，从而增加电荷保留期并增强信息存储能力。

5. 发明申请

WO2011010819A3 MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME 审中-公开
标题翻译：多选择性抛光浆料组合物及使用该组合物的半导体元件生产方法
公开(公告)号：WO2011010819A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004468
申请日：2010-07-09
申请人： IUCF HYU , PARK JEA-GUN , PAIK UN-GYU , PARK JIN-HYUNG , CUI HAO , CHO JONG-YOUNG , HWANG HEE-SUB , LIM JAE-HYUNG , KIM YE-HWAN
发明人： PARK JEA-GUN , PAIK UN-GYU , PARK JIN-HYUNG , CUI HAO , CHO JONG-YOUNG , HWANG HEE-SUB , LIM JAE-HYUNG , KIM YE-HWAN
IPC分类号： H01L21/304
CPC分类号： H01L21/31056 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.
摘要翻译：本发明提供一种多选择性研磨液组合物及使用其的半导体元件制造方法。提供有元件图案的硅膜形成在具有第一区域和第二区域的基板的最上部分上。第一区域上的元件图案密度高于第二区域上的元件图案密度。在元件图案上依次形成第一氧化硅膜，氮化硅膜和第二氧化硅膜。通过使用包含抛光剂，氮化硅膜钝化剂和硅膜钝化剂的抛光浆料组合物，对衬底进行化学机械抛光直到暴露硅膜。抛光浆料组合物可以是100重量份含有抛光剂的抛光剂悬浮液和40-120重量份添加剂溶液的混合物，并且添加剂溶液可以含有100重量份溶剂 0.01至5重量份的氮化硅膜钝化剂和0.01至5重量份的硅膜钝化剂。

6. 发明申请

WO2010110590A3 SOLAR CELL, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：WO2010110590A3
公开(公告)日：2010-12-09
申请号：PCT/KR2010001791
申请日：2010-03-24
申请人： IUCF HYU , PARK JEA GUN , SHIM TAE HUN , LEE SU HWAN , KIM JI HEON
发明人： PARK JEA GUN , SHIM TAE HUN , LEE SU HWAN , KIM JI HEON
IPC分类号： H01L31/042
CPC分类号： H01L51/4253 , B82Y10/00 , H01L51/0036 , H01L51/0047 , H01L51/0078 , H01L51/0087 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to a solar cell with increased light absorption and improved photoelectric transformation efficiency, and to a method for producing the solar cell. The solar cell according to the present invention comprises: a substrate; a first electrode formed on the substrate; a photoactive layer formed on the first electrode; and a second electrode formed on the photoactive layer, wherein said photoactive layer includes an electron acceptor and two or more electron donors.
摘要翻译：本发明涉及具有增加的光吸收和改进的光电转换效率的太阳能电池，以及一种太阳能电池的制造方法。根据本发明的太阳能电池包括：基板; 形成在所述基板上的第一电极; 形成在第一电极上的光敏层; 以及形成在所述光敏层上的第二电极，其中所述光活性层包括电子受体和两个或更多个电子给体。

7. 发明申请

WO2011013917A3 DOUBLE-SIDED LIGHT-COLLECTING ORGANIC SOLAR CELL 审中-公开
标题翻译：双面收集有机太阳能电池
公开(公告)号：WO2011013917A3
公开(公告)日：2011-04-07
申请号：PCT/KR2010004423
申请日：2010-07-07
申请人： IUCF HYU , PARK JEA-GUN , LEE SU-HWAN , KIM JI-HEON , KIM DAL-HO
发明人： PARK JEA-GUN , LEE SU-HWAN , KIM JI-HEON , KIM DAL-HO
IPC分类号： H01L31/042
CPC分类号： H01L27/302
摘要： Disclosed is a double-sided light-collecting organic solar cell. The double-sided light-collecting organic solar cell comprises: a first light-transmitting electrode; a first photoactive layer disposed on the first light-transmitting electrode; a reflective electrode disposed on the first photoactive layer; a second photoactive layer disposed on the reflective electrode; and a second light-transmitting electrode disposed on the second photoactive layer. According to the present invention, photoactive layers are formed on both sides of a reflective electrode in the middle, and light-transmitting electrodes are formed to enable light to be absorbed at both sides of a cell, to increase the light absorption of the cell and enable the production of a highly efficient organic solar cell.
摘要翻译：公开了一种双面收光有机太阳能电池。双面收集有机太阳能电池包括：第一透光电极; 设置在第一透光电极上的第一光敏层; 设置在所述第一光活性层上的反射电极; 设置在反射电极上的第二光敏层; 以及设置在所述第二光活性层上的第二透光电极。根据本发明，在中间的反射电极的两侧形成光敏层，并且形成透光电极以使光能够在电池的两侧被吸收，以增加电池的光吸收，能够生产高效的有机太阳能电池。

8. 发明申请

WO2013154236A8 POLISHING SLURRY AND METHOD OF POLISHING USING THE SAME 审中-公开
标题翻译：抛光浆和使用其抛光方法
公开(公告)号：WO2013154236A8
公开(公告)日：2014-04-03
申请号：PCT/KR2012007367
申请日：2012-09-14
申请人： UBMATERIALS INC , PARK JEA GUN , LEE GON SUB , PARK JIN HYUNG , LIM JAE HYUNG , CHO JONG YOUNG , HWANG HEE SUB , CUI HAO
发明人： PARK JEA GUN , LEE GON SUB , PARK JIN HYUNG , LIM JAE HYUNG , CHO JONG YOUNG , HWANG HEE SUB , CUI HAO
IPC分类号： C09K3/14 , H01L21/304
CPC分类号： C23F1/14 , C09G1/02 , C09K3/1409 , H01L21/3212 , H01L21/7684
摘要： Disclosed are a polishing slurry used in a polishing process of tungsten and a method of polishing using the same. The slurry includes an abrasive for performing polishing and an oxidation promoting agent for promoting the formation of an oxide. The abrasive includes titanium oxide particles.
摘要翻译：公开了用于钨的抛光工艺的抛光浆料和使用其的抛光方法。浆料包括用于进行抛光的研磨剂和用于促进氧化物形成的氧化促进剂。研磨剂包括氧化钛颗粒。

9. 发明申请

WO2014017683A1 NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：WO2014017683A1
公开(公告)日：2014-01-30
申请号：PCT/KR2012/006011
申请日：2012-07-27
申请人： IUCF-HYU , PARK, Jea Gun , SEO, Sung Ho , NAM, Woo Sik , LEE, Jong Sun
发明人： PARK, Jea Gun , SEO, Sung Ho , NAM, Woo Sik , LEE, Jong Sun
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L51/0591 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C2213/15 , H01L27/101
摘要： Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.
摘要翻译：提供了一种非易失性存储器件。非易失性存储器件包括：彼此间隔开的第一和第二电极; 设置在所述第一和第二电极之间的至少一个纳米晶体层; 以及分别设置在第一和第二电极和纳米晶体层之间并具有双稳态导电性质的第一和第二材料层，其中第一和第二材料层彼此不对称地形成。

10. 发明申请

WO2010110567A2 SOLAR CELL, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：WO2010110567A2
公开(公告)日：2010-09-30
申请号：PCT/KR2010001750
申请日：2010-03-22
申请人： IUCF HYU , PARK JEA GUN , LEE SU HWAN , KIM DAL HO
发明人： PARK JEA GUN , LEE SU HWAN , KIM DAL HO
IPC分类号： H01L31/042
CPC分类号： H01L51/447 , H01L51/0036 , H01L51/0037 , H01L51/4246 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： The present invention relates to a solar cell in which optical loss caused when light incident from an external source is reflected and discharged again to the outside is reduced so as to improve the light absorption and efficiency of photoelectric transformation, and to a method for manufacturing the solar cell. The solar cell according to the present invention comprises: a first electrode formed on a substrate; a photoactive layer which is formed on the first electrode, and in which nanocrystals are distributed; and a second electrode formed on the photoactive layer.
摘要翻译：太阳能电池及其制造方法技术领域本发明涉及一种太阳能电池及其制造方法，该太阳能电池中，当从外部光源入射的光被再次反射并向外部放电时所引起的光损失被降低以提高光吸收和光电转换效率太阳能电池。根据本发明的太阳能电池包括：形成在基板上的第一电极; 形成在第一电极上并且纳米晶体分布在其中的光敏层; 以及形成在光敏层上的第二电极。

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