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1. 发明授权

US07534363B2 Method for providing uniform removal of organic material 有权
标题翻译：提供均匀去除有机材料的方法
公开(公告)号：US07534363B2
公开(公告)日：2009-05-19
申请号：US10877222
申请日：2004-06-25
申请人： Rao V. Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas S. Choi , David R. Pirkle
发明人： Rao V. Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas S. Choi , David R. Pirkle
IPC分类号： C23F1/00
CPC分类号： H01J37/3244 , G03F7/427 , H01J37/32082 , H01L21/31116 , H01L21/31138
摘要： A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.
摘要翻译：提供了一种在衬底上除去有机材料的方法。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室的外部区域，其中外部区域围绕内部区域，第二气体具有含碳成分，其中第二气体的含碳成分的浓度大于浓度的第一气体中的含碳组分。从第一气体和第二气体同时产生等离子体。使用所产生的等离子体去除部分或全部有机材料。

2. 发明申请

US20050006346A1 Method for providing uniform removal of organic material 有权
标题翻译：提供均匀去除有机材料的方法
公开(公告)号：US20050006346A1
公开(公告)日：2005-01-13
申请号：US10877222
申请日：2004-06-25
申请人： Rao Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas Choi , David Pirkle
发明人： Rao Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas Choi , David Pirkle
IPC分类号： C23F1/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： H01J37/3244 , G03F7/427 , H01J37/32082 , H01L21/31116 , H01L21/31138
摘要： A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.
摘要翻译：提供了一种在衬底上除去有机材料的方法。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室的外部区域，其中外部区域围绕内部区域，第二气体具有含碳成分，其中第二气体的含碳成分的浓度大于浓度的第一气体中的含碳组分。从第一气体和第二气体同时产生等离子体。使用所产生的等离子体去除部分或全部有机材料。

3. 发明授权

US07521362B2 Methods for the optimization of ion energy control in a plasma processing system 有权
标题翻译：在等离子体处理系统中优化离子能量控制的方法
公开(公告)号：US07521362B2
公开(公告)日：2009-04-21
申请号：US10745846
申请日：2003-12-23
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/302
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/31144 , H01L21/76807
摘要： A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.
摘要翻译：公开了一种用于通过半镶嵌叠层的电介质层在半导体衬底上蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流入等离子体处理室，蚀刻剂气体混合物被配置为蚀刻介电层。该方法还包括从蚀刻剂源气体冲击等离子体。该方法还包括通过介电层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约27MHz和约90MHz之间的偏置RF频率。偏置RF信号还具有偏置RF功率分量，其被配置为根据预定的蚀刻速率参数和偏置RF频率处的蚀刻轮廓参数来蚀刻特征。

4. 发明申请

US20080113516A1 SELECTIVITY CONTROL IN A PLASMA PROCESSING SYSTEM 有权
标题翻译：等离子体处理系统中的选择性控制
公开(公告)号：US20080113516A1
公开(公告)日：2008-05-15
申请号：US11969833
申请日：2008-01-04
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/461
CPC分类号： H01L21/76811 , H01J37/32706 , H01L21/31116 , H01L21/31144
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.
摘要翻译：一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。该方法还包括从蚀刻剂源气体冲击等离子体。此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约45MHz和约75MHz之间的偏置RF频率。偏置RF信号还具有偏置RF功率分量，该偏置RF功率分量被配置为使得蚀刻特征被蚀刻以对于高于预定义的选择性阈值的衬底的第二层的蚀刻选择性。

5. 发明申请

US20060121729A1 Methods for the optimization of ion energy control in a plasma processing system 有权
公开(公告)号：US20060121729A1
公开(公告)日：2006-06-08
申请号：US10745846
申请日：2003-12-23
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/461
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/31144 , H01L21/76807
摘要： A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.

6. 发明授权

US08222155B2 Selectivity control in a plasma processing system 有权
标题翻译：等离子体处理系统中的选择性控制
公开(公告)号：US08222155B2
公开(公告)日：2012-07-17
申请号：US11969833
申请日：2008-01-04
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/302
CPC分类号： H01L21/76811 , H01J37/32706 , H01L21/31116 , H01L21/31144
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.
摘要翻译：一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。该方法还包括从蚀刻剂源气体冲击等离子体。此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约45MHz和约75MHz之间的偏置RF频率。偏置RF信号还具有偏置RF功率分量，该偏置RF功率分量被配置为使得蚀刻特征被蚀刻以对于高于预定义的选择性阈值的衬底的第二层的蚀刻选择性。

7. 发明申请

US20120276747A1 PREVENTION OF LINE BENDING AND TILTING FOR ETCH WITH TRI-LAYER MASK 有权
标题翻译：使用三层面罩防止线弯曲和倾斜
公开(公告)号：US20120276747A1
公开(公告)日：2012-11-01
申请号：US13096697
申请日：2011-04-28
申请人： Youn-Jin Oh , Kenji Takeshita , Hitoshi Takahashi
发明人： Youn-Jin Oh , Kenji Takeshita , Hitoshi Takahashi
IPC分类号： H01L21/3065 , H01L21/308
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/31138
摘要： A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.
摘要翻译：提供了一种用于蚀刻蚀刻层中的特征的方法。使用硬掩模作为蚀刻掩模蚀刻有机掩模层。通过相对于有机掩模和蚀刻层选择性地蚀刻硬掩模，去除硬掩模。在蚀刻层中蚀刻特征，使用有机掩模作为蚀刻掩模。

8. 发明申请

US20110097904A1 METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
标题翻译：修复低K电介质损伤的方法
公开(公告)号：US20110097904A1
公开(公告)日：2011-04-28
申请号：US12604224
申请日：2009-10-22
申请人： Stephen M. Sirard , Kenji Takeshita , Andrew D. Bailey, III
发明人： Stephen M. Sirard , Kenji Takeshita , Andrew D. Bailey, III
IPC分类号： H01L21/3065
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.
摘要翻译：提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。提供了包含CH 4气体的修复气体。将修复气体形成为等离子体，同时保持低于50mTorr的压力。与由修复气体形成的等离子体中的被甲基取代的羟基被甲基取代。

9. 发明申请

US20090161702A1 Optically pumped disk-type solid state laser oscillator and optically pumped disk-type solid state laser system 有权
标题翻译：光泵浦式固态激光振荡器和光泵式盘式固态激光系统
公开(公告)号：US20090161702A1
公开(公告)日：2009-06-25
申请号：US12003178
申请日：2007-12-20
申请人： Kenji Takeshita , Shinya Ishii
发明人： Kenji Takeshita , Shinya Ishii
IPC分类号： H01S5/30
CPC分类号： H01S3/09415 , H01S3/042 , H01S3/0604 , H01S3/0621 , H01S3/0627 , H01S3/0915 , H01S3/094038
摘要： An optically pumped disk type solid state laser oscillator includes: a cylindrical shape thin film laser gain medium having a through-hole; a ring mirror whose surface is opposing to a side surface of the thin film laser gain medium; a conical mirror arranged in the through-hole and reflects a light from the ring mirror to a direction perpendicular to the thin film laser gain medium where an output mirror is arranged. The ring mirror, the conical mirror and the output mirror compose a resonator for oscillating a laser beam to be outputted from the output mirror.
摘要翻译：光泵式固态激光振荡器包括：具有通孔的圆柱形薄膜激光增益介质; 表面与薄膜激光增益介质的侧表面相对的环形镜; 布置在所述通孔中的圆锥镜，并将来自所述环形镜的光反射到与设置有输出镜的所述薄膜激光增益介质垂直的方向。环形镜，锥形镜和输出镜组成用于振荡从输出镜输出的激光束的谐振器。

10. 发明申请

US20070120944A1 Laser scanning optical apparatus 有权
标题翻译：激光扫描光学仪器
公开(公告)号：US20070120944A1
公开(公告)日：2007-05-31
申请号：US11519769
申请日：2006-09-13
申请人： Kenji Takeshita , Atsushi Ohata , Hajime Taniguchi
发明人： Kenji Takeshita , Atsushi Ohata , Hajime Taniguchi
IPC分类号： B41J2/435
CPC分类号： B41J2/473 , G02B26/123
摘要： A laser scanning optical apparatus wherein a plural number of beams are deflected by one polygon mirror and are scanned on respective corresponding photosensitive drums via a scanning optical system. The scanning optical system has a first scanning lens which transmits all the beams, exclusive second scanning lenses which transmit exclusively the respective beams and plane mirrors for reflecting the beams. The second scanning lenses are located such that at least one of the second scanning lenses is at a distance from the corresponding photosensitive drum on which the beam transmitted by the at least one of the second scanning lenses is scanned and that another second scanning lens is at another distance from the corresponding photosensitive drum on which the beams transmitted by the another second scanning lens is scanned. For example, at least one of the exclusive optical elements is at a distance from the corresponding photosensitive drum, and the other exclusive optical elements are at another distance from the respective corresponding photosensitive drums. Alternatively, the exclusive optical elements are at mutually different distances from the respective corresponding photosensitive drums.
摘要翻译：一种激光扫描光学装置，其中多个光束被一个多面镜偏转并且经由扫描光学系统在相应的对应的感光鼓上进行扫描。扫描光学系统具有透射所有光束的第一扫描透镜，专门发送各个光束的专用第二扫描透镜和用于反射光束的平面镜。第二扫描透镜被定位成使得至少一个第二扫描透镜距离相应的感光鼓一个距离，在该感光鼓上扫描由至少一个第二扫描透镜发射的光束，并且另一个第二扫描透镜处于距离相应的感光鼓的另一个距离，其上扫描由另一个第二扫描透镜传输的光束。例如，至少一个专用光学元件距离对应的感光鼓有一定距离，而其他专用光学元件距离各个相应的感光鼓相距一定距离。或者，专用光学元件与相应的相应的感光鼓相距不同的距离。

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