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1. 发明专利

TWI486102B 訊號產生系統有权
简体标题：信号产生系统
公开(公告)号：TWI486102B
公开(公告)日：2015-05-21
申请号：TW098144109
申请日：2009-12-22
申请人：牛津儀器奈米科技工具有限公司 , OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人：游克大衛安卓 , YORK, DAVID ANDREW , 侯雪布萊恩 , HALSALL, BRIAN , 查斯喬治安 , CHANCE, GREGORY IAN
IPC分类号： H05H7/02 , H03H7/38
CPC分类号： H03H7/40

2. 发明专利

TWI608533B 用來於基板上沈積及／或蝕刻材料之方法及裝置有权
简体标题：用来于基板上沉积及／或蚀刻材料之方法及设备
公开(公告)号：TWI608533B
公开(公告)日：2017-12-11
申请号：TW102106858
申请日：2013-02-27
申请人：牛津儀器奈米科技工具有限公司 , OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人：邁可尼馬克艾華德 , MCNIE, MARK EDWARD , 庫奇麥可約瑟 , COOKE, MICHAEL JOSEPH , 爾阿爾斯利麥可 , LEA, LESLIE MICHAEL
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01J37/32926 , C23C16/50 , C23C16/52 , G05B19/418 , G05B2219/34198 , H01J37/32449 , H01J37/32816 , H01J37/32834 , H01J37/32917 , H01J2237/24564 , H01J2237/24585 , H01J2237/248 , H01J2237/3321 , H01J2237/334 , H01L21/306 , H01L21/30655 , H01L22/12 , H01L22/26

3. 发明专利

TWI632638B 靜電夾取方法和裝置有权
简体标题：静电夹取方法和设备
公开(公告)号：TWI632638B
公开(公告)日：2018-08-11
申请号：TW103141928
申请日：2014-12-03
申请人：牛津儀器奈米科技工具有限公司 , OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人：宋尹賓 , SONG, YIPING , 費雷雅若昂L G , FERREIRA, JOAO L G , 庫奇麥可 , COOKE, MICHAEL
IPC分类号： H01L21/683 , B65G47/92

4. 发明专利

TW201537671A 靜電夾取方法和裝置审中-公开
简体标题：静电夹取方法和设备
公开(公告)号：TW201537671A
公开(公告)日：2015-10-01
申请号：TW103141928
申请日：2014-12-03
申请人：牛津儀器奈米科技工具有限公司 , OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人：宋尹賓 , SONG, YIPING , 費雷雅若昂L G , FERREIRA, JOAO L G , 庫奇麥可 , COOKE, MICHAEL
IPC分类号： H01L21/683 , B65G47/92
CPC分类号： H01L21/6833
摘要：描述一種在電漿處理期間，以靜電方式將介電質晶圓(30)夾取至處理工作台(3)之方法。工作台(3)中嵌埋有指叉式電極(26,28)。本方法包含將相反之第一與第二極性之各別電壓施加至相鄰電極(26,28)，其中係在晶圓(30)中誘發極性與各別下層電極相反之極化電荷，藉此以靜電方式將晶圓夾取至工作台；並且，在一預定時間(ton)之後，令電壓之極性反向，以致極化電荷及靜電夾取延續。各該第一與第二極性的該供電時間(ton)係預選為 a)大於在該晶圓中產生充分極化電荷的所需時間(T1)，使得該晶圓係在撤回夾取電壓之後，以所需壓力持固至少2秒，b)在穩態電壓及電漿下，小於用以令該晶圓與該工作台分離第一預定量之時間(T2)，以及c)在外施電壓施加完成後，於沒有電漿的情況下，小於令該晶圓與該基材分離第二預定量之時間(T3)。該第一與第二極性之間的切換時間(ts)小於該時間(T1)並小於2秒。
简体摘要：描述一种在等离子处理期间，以静电方式将介电质晶圆(30)夹取至处理工作台(3)之方法。工作台(3)中嵌埋有指叉式电极(26,28)。本方法包含将相反之第一与第二极性之各别电压施加至相邻电极(26,28)，其中系在晶圆(30)中诱发极性与各别下层电极相反之极化电荷，借此以静电方式将晶圆夹取至工作台；并且，在一预定时间(ton)之后，令电压之极性反向，以致极化电荷及静电夹取延续。各该第一与第二极性的该供电时间(ton)系预选为 a)大于在该晶圆中产生充分极化电荷的所需时间(T1)，使得该晶圆系在撤回夹取电压之后，以所需压力持固至少2秒，b)在稳态电压及等离子下，小于用以令该晶圆与该工作台分离第一预定量之时间(T2)，以及c)在外施电压施加完成后，于没有等离子的情况下，小于令该晶圆与该基材分离第二预定量之时间(T3)。该第一与第二极性之间的切换时间(ts)小于该时间(T1)并小于2秒。

5. 发明专利

TW201344787A 用來於基板上沈積及／或蝕刻材料之方法及裝置审中-公开
简体标题：用来于基板上沉积及／或蚀刻材料之方法及设备
公开(公告)号：TW201344787A
公开(公告)日：2013-11-01
申请号：TW102106858
申请日：2013-02-27
申请人：牛津儀器奈米科技工具有限公司 , OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人：邁可尼馬克艾華德 , MCNIE, MARK EDWARD , 庫奇麥可約瑟 , COOKE, MICHAEL JOSEPH , 爾阿爾斯利麥可 , LEA, LESLIE MICHAEL
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01J37/32926 , C23C16/50 , C23C16/52 , G05B19/418 , G05B2219/34198 , H01J37/32449 , H01J37/32816 , H01J37/32834 , H01J37/32917 , H01J2237/24564 , H01J2237/24585 , H01J2237/248 , H01J2237/3321 , H01J2237/334 , H01L21/306 , H01L21/30655 , H01L22/12 , H01L22/26
摘要：本發明揭露一種方法，其係用於在表面處理工具中將材料沉積於基板上及/或從基板蝕刻材料，該表面處理工具具有處理室、控制器及一或多個用於調整處理室內製程參數之元件。該方法包含：控制器依據一連串控制步驟指示一或多個元件，各控制步驟指定一或多個元件受指示而實現之一組經界定製程參數，其中，控制步驟的至少一者包含控制器指示一或多個元件於步驟持續期間實現一組經界定固定製程參數，該固定製程參數包括至少一室壓和流經處理室之氣體流速，步驟之持續期間小於處理室之對應氣體駐留時間(Tgr)。
简体摘要：本发明揭露一种方法，其系用于在表面处理工具中将材料沉积于基板上及/或从基板蚀刻材料，该表面处理工具具有处理室、控制器及一或多个用于调整处理室内制程参数之组件。该方法包含：控制器依据一连串控制步骤指示一或多个组件，各控制步骤指定一或多个组件受指示而实现之一组经界定制程参数，其中，控制步骤的至少一者包含控制器指示一或多个组件于步骤持续期间实现一组经界定固定制程参数，该固定制程参数包括至少一室压和流经处理室之气体流速，步骤之持续期间小于处理室之对应气体驻留时间(Tgr)。

6. 发明专利

TW201438137A 基板承載件审中-公开
简体标题：基板承载件
公开(公告)号：TW201438137A
公开(公告)日：2014-10-01
申请号：TW103102073
申请日：2014-01-21
申请人：牛津儀器奈米科技工具有限公司 , OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人：派卡尼克派特 , PIEKARNIAK, PIOTR , 挪頓安卓 , NEWTON, ANDREW
IPC分类号： H01L21/683
CPC分类号： H01L21/68728
摘要：本發明揭示一種用於電漿處理設備之基板承載件，其包含：底板總成，其包含在使用時可將基板放置於其上之平台，在使用時由放置在該平台上之基板所佔據的體積係構成基板區域；以及位在該底板總成上之頂板總成，該頂板總成包含頂板及一個或多個保持構件，該頂板具有貫穿其間且圍繞該基板區域之孔隙，該一個或多個保持構件係延伸至該孔隙中並位於該基板區域之一部分上，使得在使用時，安置在該基板區域中之基板係被保持在該底板總成與該頂板總成之間的固定位置。背向該底板總成之該頂板的上表面係本質上呈平面狀，且該一個或多個保持構件係突出於該頂板之該本質上呈平面狀的上表面之上。
简体摘要：本发明揭示一种用于等离子处理设备之基板承载件，其包含：底板总成，其包含在使用时可将基板放置于其上之平台，在使用时由放置在该平台上之基板所占据的体积系构成基板区域；以及位在该底板总成上之顶板总成，该顶板总成包含顶板及一个或多个保持构件，该顶板具有贯穿其间且围绕该基板区域之孔隙，该一个或多个保持构件系延伸至该孔隙中并位于该基板区域之一部分上，使得在使用时，安置在该基板区域中之基板系被保持在该底板总成与该顶板总成之间的固定位置。背向该底板总成之该顶板的上表面系本质上呈平面状，且该一个或多个保持构件系突出于该顶板之该本质上呈平面状的上表面之上。

7. 发明申请

WO2023002226A1 IMPROVED NAVIGATION FOR ELECTRON MICROSCOPY 审中-公开
公开(公告)号：WO2023002226A1
公开(公告)日：2023-01-26
申请号：PCT/GB2022/051946
申请日：2022-07-25
申请人： OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人： STATHAM, Peter , PINARD, Philippe
IPC分类号： H01J37/22 , H01J37/26 , H01J37/28 , G01N23/2252
摘要： A method for analyzing a specimen in a microscope is described. The method comprises: acquiring a series of compound image frames using a first detector and a second detector, different from the first detector and displaying the series of compound image frames in real-time on a visual display, wherein the visual display is updated to show each compound image frame in sequence. Acquiring a compound image frame comprises: causing a charged particle beam to traverse a region of a specimen, the region corresponding to a configured field of view of the microscope, wherein: when a mode parameter has a first value, the traversal of the beam is along a first traversal path on the region and is according to a first set of traversal conditions, and when the mode parameter has a second value, the traversal of the beam is along a second traversal path on the region and is according to a second set of traversal conditions, wherein a first total time required for the beam to traverse the entire first traversal path according to a first set of traversal conditions is less than a second total time required for the beam to traverse the entire second traversal path according to the second set of traversal conditions; monitoring a first set of resulting particles generated within the specimen at a first plurality of locations within the region using the first detector so as to obtain a first image frame, the first image frame comprising a plurality of pixels corresponding to, and having values derived from the monitored particles generated at, the first plurality of locations, monitoring a second set of resulting particles generated within the specimen at a second plurality of locations within the region using the second detector, so as to obtain a second image frame, the second image frame comprising a plurality of pixels corresponding to, and having respective sets of values derived from the monitored particles generated at, the second plurality of locations, and combining the first image frame and the second image frame so as to produce the compound image frame, such that the compound image frame provides data derived from particles generated at the first and second pluralities of locations within the region and monitored by each of the first detector and the second detector.

8. 发明申请

WO2023275540A1 MAGNET SYSTEM 审中-公开
公开(公告)号：WO2023275540A1
公开(公告)日：2023-01-05
申请号：PCT/GB2022/051665
申请日：2022-06-29
申请人： OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人： VARNEY, Andrew John
IPC分类号： H01F6/06 , G01R33/3815
摘要： There is provided a magnet system for generating a homogeneous magnetic field in a target region. The magnet system comprises: a first magnet formed from low temperature superconductor, LTS, material wound so as to define a central axis, the first magnet being arranged in use to generate a first magnetic field in the target region located upon the central axis, the first magnetic field having a first level of homogeneity; and a second magnet formed from high temperature superconductor, HTS, material and arranged in use to generate a second magnetic field in the target region, the second magnetic field having a second level of homogeneity. The first level of homogeneity of the first magnetic field is up to 10 parts per million, ppm, and the second level of homogeneity of the second magnetic field is up to 10 ppm, the combination of the first and second magnetic fields in the target region generating in use a resultant magnetic field having a resultant homogeneity of up to 10 ppm, and the first magnet and second magnet are independent current circuits.

9. 发明申请

WO2022058743A2 METHOD OF PREPARING A SILICON CARBIDE WAFER 审中-公开
公开(公告)号：WO2022058743A2
公开(公告)日：2022-03-24
申请号：PCT/GB2021/052423
申请日：2021-09-17
申请人： OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人： MAZZAMUTO, Samantha , NEWTON, Andrew , LOVEDAY, Matthew , COOKE, Michael
IPC分类号： H01L21/3065
摘要： A method of preparing a silicon carbide wafer for subsequent epitaxial growth thereon is disclosed. The method comprises (a) placing the silicon carbide wafer onto a support table in a plasma processing chamber such that the surface of the silicon carbide wafer distal to the support table is unmasked; (b) establishing a flow of an etch gas mixture into the plasma processing chamber, wherein the etch gas mixture comprises molecular hydrogen, H2; and (c) generating a plasma from the etch gas mixture within the plasma processing chamber and using the plasma to etch the unmasked surface of the wafer so as to reduce the roughness of the unmasked surface.

10. 发明申请

WO2022043694A1 SAMPLE PREPARATION METHOD AND APARATUS 审中-公开
公开(公告)号：WO2022043694A1
公开(公告)日：2022-03-03
申请号：PCT/GB2021/052221
申请日：2021-08-26
申请人： OXFORD INSTRUMENTS NANOTECHNOLOGY TOOLS LIMITED
发明人： LINDSAY, John , TRIMBY, Patrick , STATHAM, Peter , SCHMIDT, Niels-Henrik , THOMSEN, Knud
IPC分类号： G01N1/28 , G01N1/32 , H01J37/305
摘要： The invention relates to a method of preparing a sample for analysis. The method comprises: providing a sample comprising a surface region of interest on a first face of the sample and a second face oriented at an angle to the first face about a common edge between the first and second faces, the second face extending between the common edge and a second edge on the opposing side of the second face of the sample; and milling the second face of the sample to provide a trench in the surface of the second face, the trench extending from a first position on the second face between the common edge and the second edge to a second position adjacent to the common edge; wherein the trench is arranged so as to provide an electron transparent sample layer comprising the surface region of interest. By milling the second face of the sample only, a surface region of interest on the first face of the sample is fully preserved and remains free of milling beam induced damage. This allows for correlative characterisation work which requires both an electron transparent sample and a fully intact sample surface to obtain surface-sensitive data.

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