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1. 发明申请

WO2011112812A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112812A3
公开(公告)日：2011-09-15
申请号：PCT/US2011/027900
申请日：2011-03-10
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , RANISH, Joseph, M. , HUNTER, Aaron, M. , TANG, Jing , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , SWENBERG, Johanes, F. , WANG, Anchuan , INGLE, Nitin, K. , HEMKAR, Manish , MARIN, Jose, A.
发明人： GANGULY, Udayan , RANISH, Joseph, M. , HUNTER, Aaron, M. , TANG, Jing , OLSEN, Christopher, S. , SCOTNEY-CASTLE, Matthew, D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , SWENBERG, Johanes, F. , WANG, Anchuan , INGLE, Nitin, K. , HEMKAR, Manish , MARIN, Jose, A.
IPC分类号： H01L21/3065
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

2. 发明申请

WO2011008456A3 METHODS OF FORMING OXIDE LAYERS ON SUBSTRATES 审中-公开
公开(公告)号：WO2011008456A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/039753
申请日：2010-06-24
申请人： APPLIED MATERIALS, INC. , YOKOTA, Yoshitaka , OLSEN, Christopher, S. , TJANDRA, Agus, Sofian , CHO, Yonah , ROGERS, Matthew S.
发明人： YOKOTA, Yoshitaka , OLSEN, Christopher, S. , TJANDRA, Agus, Sofian , CHO, Yonah , ROGERS, Matthew S.
IPC分类号： H01L21/316 , H01L21/31 , H01L21/205
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.

3. 发明申请

WO2010088348A2 METHODS FOR FORMING CONFORMAL OXIDE LAYERS ON SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件上形成一致的氧化层的方法
公开(公告)号：WO2010088348A2
公开(公告)日：2010-08-05
申请号：PCT/US2010/022353
申请日：2010-01-28
申请人： APPLIED MATERIALS, INC. , TJANDRA, Agus S. , OLSEN, Christopher S. , SWENBERG, Johanes F. , YOKOTA, Yoshitaka
发明人： TJANDRA, Agus S. , OLSEN, Christopher S. , SWENBERG, Johanes F. , YOKOTA, Yoshitaka
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译：公开了在半导体衬底上形成氧化物层的方法和装置。在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电卡盘和冷却液和气体对流。

4. 发明申请

WO2010033378A2 METHOD AND APPARATUS FOR METAL SILICIDE FORMATION 审中-公开
标题翻译：用于金属硅化物形成的方法和设备
公开(公告)号：WO2010033378A2
公开(公告)日：2010-03-25
申请号：PCT/US2009055672
申请日：2009-09-02
申请人： APPLIED MATERIALS INC , OLSEN CHRISTOPHER S
发明人： OLSEN CHRISTOPHER S
IPC分类号： H01L21/336 , H01L21/324
CPC分类号： H01L21/2855 , H01L21/28052 , H01L21/28556 , H01L29/4933 , H01L29/78
摘要： Embodiments described herein include methods of forming metal silicide layers using a diffusionless annealing process. In one embodiment a method for forming a metal silicide material on a substrate is provided. The method comprises depositing a metal material over a silicon containing surface of a substrate, depositing a metal nitride material over the metal material, depositing a metallic contact material over the metal nitride material, and exposing the substrate to a diffusionless annealing process to form a metal silicide material. The short time-frame of the diffusionless annealing process reduces the time for the diffusion of nitrogen to the silicon containing interface to form silicon nitride thus minimizing the interfacial resistance.
摘要翻译：这里描述的实施例包括使用无扩散退火工艺形成金属硅化物层的方法。在一个实施例中，提供了一种用于在衬底上形成金属硅化物材料的方法。该方法包括在衬底的含硅表面上沉积金属材料，在金属材料上沉积金属氮化物材料，在金属氮化物材料上沉积金属接触材料，并将该衬底暴露于无扩散退火工艺以形成金属硅化物材料。无扩散退火工艺的短时间框架减少了氮扩散到含硅界面以形成氮化硅的时间，从而使界面电阻最小化。

5. 发明申请

WO2009152327A3 POST OXIDATION ANNEALING OF LOW TEMPERATURE THERMAL OR PLASMA BASED OXIDATION 审中-公开
标题翻译：低温热或基于等离子体氧化的氧化后退火
公开(公告)号：WO2009152327A3
公开(公告)日：2010-02-25
申请号：PCT/US2009047035
申请日：2009-06-11
申请人： APPLIED MATERIALS INC , OLSEN CHRISTOPHER S , YOKOTA YOSHITAKA , MANI RAJESH , SWENBERG JOHANES
发明人： OLSEN CHRISTOPHER S , YOKOTA YOSHITAKA , MANI RAJESH , SWENBERG JOHANES
IPC分类号： H01L21/31 , H01L21/324
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02337 , H01L21/28247 , H01L21/28273 , H01L21/28282 , H01L29/517
摘要： Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.
摘要翻译：本发明的实施例提供了在半导体衬底上形成氧化物层的方法。在一些实施例中，在半导体衬底上形成氧化物层的方法包括：在第一温度低于约800摄氏度的氧化工艺中，使用具有第一工艺气体的氧化工艺在衬底上形成氧化物层; 以及在第二工艺气体的存在下和在第二温度下对形成在衬底上的氧化物层进行退火。氧化过程可以是在约800摄氏度或更低的温度下进行的等离子体或热氧化过程。在一些实施例中，后氧化退火工艺可以是在至少约700摄氏度，至少约800摄氏度或至少约800摄氏度的温度下执行的尖峰或浸泡快速热处理，激光退火或闪光退火 950摄氏度。

6. 发明申请

WO2009152327A2 POST OXIDATION ANNEALING OF LOW TEMPERATURE THERMAL OR PLASMA BASED OXIDATION 审中-公开
标题翻译：低温热或基于等离子体氧化的氧化后退火
公开(公告)号：WO2009152327A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/047035
申请日：2009-06-11
申请人： APPLIED MATERIALS, INC. , OLSEN, Christopher, S. , YOKOTA, Yoshitaka , MANI, Rajesh , SWENBERG, Johanes
发明人： OLSEN, Christopher, S. , YOKOTA, Yoshitaka , MANI, Rajesh , SWENBERG, Johanes
IPC分类号： H01L21/31 , H01L21/324
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02337 , H01L21/28247 , H01L21/28273 , H01L21/28282 , H01L29/517
摘要： Embodiments of the present invention provide methods of forming oxide layers on semiconductor substrates. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes forming an oxide layer on a substrate using an oxidation process having a first process gas at a first temperature less than about 800 degrees Celsius; and annealing the oxide layer formed on the substrate in the presence of a second process gas and at a second temperature. The oxidation process may be a plasma or thermal oxidation process performed at a temperature of about 800 degrees Celsius or below. In some embodiments, the post oxidation annealing process may be a spike or soak rapid thermal process, a laser anneal, or a flash anneal performed at a temperature of at least about 700 degrees Celsius, at least about 800 degrees Celsius, or at least about 950 degrees Celsius.
摘要翻译：本发明的实施例提供了在半导体衬底上形成氧化物层的方法。在一些实施例中，在半导体衬底上形成氧化物层的方法包括：在第一温度低于约800摄氏度的氧化工艺中，使用具有第一工艺气体的氧化工艺在衬底上形成氧化物层; 以及在第二工艺气体的存在下和在第二温度下对形成在衬底上的氧化物层进行退火。氧化过程可以是在约800摄氏度或更低的温度下进行的等离子体或热氧化过程。在一些实施例中，后氧化退火工艺可以是在至少约700摄氏度，至少约800摄氏度或至少约800摄氏度的温度下执行的尖峰或浸泡快速热处理，激光退火或闪光退火 950摄氏度。

7. 发明申请

WO2012112187A1 METHOD AND APPARATUS FOR MULTIZONE PLASMA GENERATION 审中-公开
标题翻译：多重等离子体生成的方法和装置
公开(公告)号：WO2012112187A1
公开(公告)日：2012-08-23
申请号：PCT/US2011/045626
申请日：2011-07-27
申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew Scott , HUA, Zhong Qiang , OLSEN, Christopher S.
发明人： ROGERS, Matthew Scott , HUA, Zhong Qiang , OLSEN, Christopher S.
IPC分类号： H05H1/34 , H01L21/3065 , H01L21/683
CPC分类号： C23C16/513 , C23C16/45565 , C23C16/4584 , C23C16/481 , C23C16/505 , C23C16/517 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.
摘要翻译：本发明的实施例提供了一种方法和装置，用于通过在给定压力下控制离子与等离子体中的自由基的比例来等离子体处理衬底以在衬底上和其上设置的器件上形成膜。可以保持给定的压力以促进使用一个等离子体源的离子产生，并且可以使用第二等离子体源来提供额外的自由基。在一个实施例中，在其中定位有基板的处理区域中产生低压等离子体，并且在分离的区域中产生高压等离子体。来自高压等离子体的自由基被注入到具有低压等离子体的处理区域中，从而在给定的操作压力下改变自由基对离子的自然分布。所得到的方法和装置能够定制离子与自由基比例，以便更好地控制高纵横比特征上的成膜，从而改善角落圆化，侧壁到底部沟槽生长的共形性以及选择性生长。

8. 发明申请

WO2011112812A2 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112812A2
公开(公告)日：2011-09-15
申请号：PCT/US2011027900
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , SWENBERG JOHANES F , WANG ANCHUAN , INGLE NITIN K , HEMKAR MANISH , MARIN JOSE A
发明人： GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , SWENBERG JOHANES F , WANG ANCHUAN , INGLE NITIN K , HEMKAR MANISH , MARIN JOSE A
IPC分类号： H01L21/3065
CPC分类号： H01L21/67115 , H01L21/0223 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

9. 发明申请

WO2011112802A2 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
标题翻译：用于循环氧化和蚀刻的装置和方法
公开(公告)号：WO2011112802A2
公开(公告)日：2011-09-15
申请号：PCT/US2011/027881
申请日：2011-03-10
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , RANISH, Joseph M. , HUNTER, Aaron M. , TANG, Jing , OLSEN, Christopher S. , SCOTNEY-CASTLE, Matthew D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , LIU, Wei , SWENBERG, Johanes F. , SUN, Shiyu
发明人： GANGULY, Udayan , RANISH, Joseph M. , HUNTER, Aaron M. , TANG, Jing , OLSEN, Christopher S. , SCOTNEY-CASTLE, Matthew D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , LIU, Wei , SWENBERG, Johanes F. , SUN, Shiyu
IPC分类号： H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

10. 发明申请

WO2010088348A3 METHODS FOR FORMING CONFORMAL OXIDE LAYERS ON SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件上形成共形氧化物层的方法
公开(公告)号：WO2010088348A3
公开(公告)日：2010-11-25
申请号：PCT/US2010022353
申请日：2010-01-28
申请人： APPLIED MATERIALS INC , TJANDRA AGUS S , OLSEN CHRISTOPHER S , SWENBERG JOHANES F , YOKOTA YOSHITAKA
发明人： TJANDRA AGUS S , OLSEN CHRISTOPHER S , SWENBERG JOHANES F , YOKOTA YOSHITAKA
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译：公开了用于在半导体衬底上形成氧化物层的方法和装置。在一个或多个实施例中，通过在低于约100℃的温度下控制半导体衬底的温度，使用等离子体氧化来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底温度的方法包括利用静电卡盘以及冷却剂和气体对流。

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