专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010088348A2 METHODS FOR FORMING CONFORMAL OXIDE LAYERS ON SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件上形成一致的氧化层的方法
公开(公告)号：WO2010088348A2
公开(公告)日：2010-08-05
申请号：PCT/US2010/022353
申请日：2010-01-28
申请人： APPLIED MATERIALS, INC. , TJANDRA, Agus S. , OLSEN, Christopher S. , SWENBERG, Johanes F. , YOKOTA, Yoshitaka
发明人： TJANDRA, Agus S. , OLSEN, Christopher S. , SWENBERG, Johanes F. , YOKOTA, Yoshitaka
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/02238 , H01J37/321 , H01J37/32137 , H01J37/32724 , H01L21/0223 , H01L21/02252 , H01L21/28273 , H01L21/28282 , H01L21/3165 , H01L21/31662 , H01L21/67109 , H01L21/76224 , H01L29/7881
摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
摘要翻译：公开了在半导体衬底上形成氧化物层的方法和装置。在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电卡盘和冷却液和气体对流。

2. 发明申请

WO2011112802A2 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
标题翻译：用于循环氧化和蚀刻的装置和方法
公开(公告)号：WO2011112802A2
公开(公告)日：2011-09-15
申请号：PCT/US2011/027881
申请日：2011-03-10
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , RANISH, Joseph M. , HUNTER, Aaron M. , TANG, Jing , OLSEN, Christopher S. , SCOTNEY-CASTLE, Matthew D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , LIU, Wei , SWENBERG, Johanes F. , SUN, Shiyu
发明人： GANGULY, Udayan , RANISH, Joseph M. , HUNTER, Aaron M. , TANG, Jing , OLSEN, Christopher S. , SCOTNEY-CASTLE, Matthew D. , NGUYEN, Vicky , SRINIVASAN, Swaminathan , LIU, Wei , SWENBERG, Johanes F. , SUN, Shiyu
IPC分类号： H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

3. 发明申请

WO2014022184A1 APPARATUS AND METHOD FOR SELECTIVE OXIDATION AT LOWER TEMPERATURE USING REMOTE PLASMA SOURCE 审中-公开
标题翻译：使用远程等离子体源在较低温度下选择性氧化的装置和方法
公开(公告)号：WO2014022184A1
公开(公告)日：2014-02-06
申请号：PCT/US2013/051985
申请日：2013-07-25
申请人： APPLIED MATERIALS, INC. , PAN, Heng , ROGERS, Matthew Scott , TJANDRA, Agus S. , OLSEN, Christopher S.
发明人： PAN, Heng , ROGERS, Matthew Scott , TJANDRA, Agus S. , OLSEN, Christopher S.
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： H01L21/02238 , H01L21/02068 , H01L21/02164 , H01L21/02252
摘要： Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800°C, flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.
摘要翻译：本文描述了用于选择性氧化硅的装置和方法。用于暴露的硅表面的选择性氧化的设备包括具有多个壁的热处理室，第一入口连接和第二入口连接，其中壁限定处理室内的处理区域，处理室内的衬底支撑件，与第一入口连接的氢源，与氢源连接的热源以及与第二入口连接和氧源连接的远程等离子体源。用于非金属表面的选择性氧化的方法可以包括将基底定位在温度低于800℃的处理室中，将氢气流入处理室，产生包含氧的远程等离子体，将远程等离子体与氢处理室中的气体以产生活化的处理气体，并将基板暴露于活化气体。

4. 发明申请

WO2012112187A1 METHOD AND APPARATUS FOR MULTIZONE PLASMA GENERATION 审中-公开
标题翻译：多重等离子体生成的方法和装置
公开(公告)号：WO2012112187A1
公开(公告)日：2012-08-23
申请号：PCT/US2011/045626
申请日：2011-07-27
申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew Scott , HUA, Zhong Qiang , OLSEN, Christopher S.
发明人： ROGERS, Matthew Scott , HUA, Zhong Qiang , OLSEN, Christopher S.
IPC分类号： H05H1/34 , H01L21/3065 , H01L21/683
CPC分类号： C23C16/513 , C23C16/45565 , C23C16/4584 , C23C16/481 , C23C16/505 , C23C16/517 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.
摘要翻译：本发明的实施例提供了一种方法和装置，用于通过在给定压力下控制离子与等离子体中的自由基的比例来等离子体处理衬底以在衬底上和其上设置的器件上形成膜。可以保持给定的压力以促进使用一个等离子体源的离子产生，并且可以使用第二等离子体源来提供额外的自由基。在一个实施例中，在其中定位有基板的处理区域中产生低压等离子体，并且在分离的区域中产生高压等离子体。来自高压等离子体的自由基被注入到具有低压等离子体的处理区域中，从而在给定的操作压力下改变自由基对离子的自然分布。所得到的方法和装置能够定制离子与自由基比例，以便更好地控制高纵横比特征上的成膜，从而改善角落圆化，侧壁到底部沟槽生长的共形性以及选择性生长。

5. 发明申请

WO2010117703A2 METHOD OF SELECTIVE NITRIDATION 审中-公开
标题翻译：选择性硝化方法
公开(公告)号：WO2010117703A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/028998
申请日：2010-03-29
申请人： APPLIED MATERIALS, INC. , OLSEN, Christopher S. , SWENBERG, Johanes , GANGULY, Udayan , GUARINI, Theresa Kramer , CHO, Yonah
发明人： OLSEN, Christopher S. , SWENBERG, Johanes , GANGULY, Udayan , GUARINI, Theresa Kramer , CHO, Yonah
IPC分类号： H01L21/76 , H01L21/8247 , H01L27/115
CPC分类号： H01L21/3144 , H01L21/02247 , H01L21/02326 , H01L21/02332 , H01L21/0234 , H01L21/3211 , H01L27/11521 , Y10S438/911
摘要： Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.
摘要翻译：本文提供了形成半导体器件的方法。在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

6. 发明申请

WO2013074369A1 METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS 审中-公开
标题翻译：选择性硝化过程的方法和装置
公开(公告)号：WO2013074369A1
公开(公告)日：2013-05-23
申请号：PCT/US2012/064206
申请日：2012-11-08
申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew S. , OLSEN, Christopher S.
发明人： ROGERS, Matthew S. , OLSEN, Christopher S.
IPC分类号： H01L21/318 , H01L27/115 , H01L21/8247
CPC分类号： H01L21/0217 , H01J37/32357 , H01L21/02247 , H01L21/02252 , H01L21/02301 , H01L21/3211 , H01L21/67017 , H01L21/67115 , H01L21/6719 , H01L21/67207 , H01L27/11521
摘要： Embodiments described herein generally relate to methods for manufacturing flash memory devices. In one embodiment, a method for removing native oxides from a substrate is provided. The method includes transferring a substrate having an oxide layer disposed thereon into a first processing chamber, exposing the substrate to a plasma generated from a cleaning gas mixture, wherein the cleaning gas mixture comprises a hydrogen-containing gas and a fluorine-containing gas, heating the substrate to a temperature sufficient to remove the oxide layer from the substrate, transferring the substrate from the first processing chamber to a second processing chamber without breaking vacuum, and flowing a plasma containing substantially nitrogen-containing radicals into the second processing chamber to expose the substrate to nitrogen containing radicals.
摘要翻译：本文描述的实施例通常涉及用于制造闪存设备的方法。在一个实施方案中，提供了从底物中除去天然氧化物的方法。该方法包括将其上设置有氧化物层的衬底转移到第一处理室中，将衬底暴露于由清洁气体混合物产生的等离子体，其中清洗气体混合物包含含氢气体和含氟气体，加热所述衬底具有足以从所述衬底移除所述氧化物层的温度，将所述衬底从所述第一处理室转移到第二处理室而不破坏真空，以及使含有基本上含氮自由基的等离子体流入所述第二处理室以暴露所述第二处理室底物含氮基团。

7. 发明申请

WO2013022530A1 METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS 审中-公开
标题翻译：选择性硝化过程的方法和装置
公开(公告)号：WO2013022530A1
公开(公告)日：2013-02-14
申请号：PCT/US2012/045046
申请日：2012-06-29
申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew S. , CURTIS, Roger , HAWRYLCHAK, Lara , LAI, Ken Kaung , HWANG, Bernard L. , TOBIN, Jeffrey , OLSEN, Christopher S. , BEVAN, Malcolm J.
发明人： ROGERS, Matthew S. , CURTIS, Roger , HAWRYLCHAK, Lara , LAI, Ken Kaung , HWANG, Bernard L. , TOBIN, Jeffrey , OLSEN, Christopher S. , BEVAN, Malcolm J.
IPC分类号： H01L21/318 , H01L21/3065 , H01L21/8247 , H01L27/115
CPC分类号： H01L21/28273 , H01J37/32357 , H01J37/32422 , H01L21/02247 , H01L21/02252 , H01L21/3211 , H01L27/11524
摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.
摘要翻译：本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。

8. 发明申请

WO2012118520A1 DUAL PLASMA SOURCE, LAMP HEATED PLASMA CHAMBER 审中-公开
标题翻译：双等离子体源，灯加热等离子体室
公开(公告)号：WO2012118520A1
公开(公告)日：2012-09-07
申请号：PCT/US2011/046000
申请日：2011-07-29
申请人： APPLIED MATERIALS, INC. , OLSEN, Christopher S. , LAI, Canfeng , RAMAMURTHY, Sundar , SWENBERG, Johanes , LIU, Wei
发明人： OLSEN, Christopher S. , LAI, Canfeng , RAMAMURTHY, Sundar , SWENBERG, Johanes , LIU, Wei
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： C23C16/517 , H01J37/32082 , H01J37/32357
摘要： Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.
摘要翻译：描述了用于处理半导体衬底的方法和设备。处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开除了基板支撑。支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

9. 发明申请

WO2010033378A3 METHOD AND APPARATUS FOR METAL SILICIDE FORMATION 审中-公开
公开(公告)号：WO2010033378A3
公开(公告)日：2010-03-25
申请号：PCT/US2009/055672
申请日：2009-09-02
申请人： APPLIED MATERIALS, INC. , OLSEN, Christopher S.
发明人： OLSEN, Christopher S.
IPC分类号： H01L21/336 , H01L21/324
摘要： Embodiments described herein include methods of forming metal silicide layers using a diffusionless annealing process. In one embodiment a method for forming a metal silicide material on a substrate is provided. The method comprises depositing a metal material over a silicon containing surface of a substrate, depositing a metal nitride material over the metal material, depositing a metallic contact material over the metal nitride material, and exposing the substrate to a diffusionless annealing process to form a metal silicide material. The short time-frame of the diffusionless annealing process reduces the time for the diffusion of nitrogen to the silicon containing interface to form silicon nitride thus minimizing the interfacial resistance.

10. 发明公开

EP2449579A2 METHODS OF FORMING OXIDE LAYERS ON SUBSTRATES 有权
标题翻译： METHOD FOR在衬底上形成氧化物层
公开(公告)号：EP2449579A2
公开(公告)日：2012-05-09
申请号：EP10800248.6
申请日：2010-06-24
申请人： Applied Materials, Inc.
发明人： YOKOTA, Yoshitaka , OLSEN, Christopher S. , TJANDRA, Agus Sofian , CHO, Yonah , ROGERS, Matthew S.
IPC分类号： H01L21/316 , H01L21/31 , H01L21/205
CPC分类号： H01L21/3105
摘要： Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式