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1. 发明申请

US20160351702A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160351702A1
公开(公告)日：2016-12-01
申请号：US14406991
申请日：2014-01-31
申请人： Hideo Numabe , Nobuyuki Shirai , Hirokazu Kato , Tomoaki Uno , Kazuyuki Umezu
发明人： Hideo Numabe , Nobuyuki Shirai , Hirokazu Kato , Tomoaki Uno , Kazuyuki Umezu
IPC分类号： H01L29/78 , H01L29/40 , H01L29/06 , H01L29/10 , H01L23/535 , H01L29/417 , H01L29/423 , H01L29/08
CPC分类号： H01L29/7813 , H01L23/535 , H01L29/0696 , H01L29/0865 , H01L29/0882 , H01L29/1033 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L2224/05554 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： A control electrode GE1 is formed in a lower portion of a trench TR1 formed in a semiconductor substrate SUB, and a gate electrode GE2 is formed in an upper portion inside the trench TR1. An insulating film G1 is formed between the control electrode GE1 and a side wall and a bottom surface of the trench TR1, an insulating film G2 is formed between the side wall of the trench TR1 and the gate electrode GE2, and an insulating film G3 is formed between the control electrode GE1 and the gate electrode GE2. A region adjacent to the trench TR1 includes an n+-type semiconductor region NR for a source, a p-type semiconductor region PR for a channel formation, and a semiconductor region for a drain. A wiring connected to the control electrode GE1 is not connected to a wiring connected to the gate electrode GE2, and is not connected to a wiring connected to the n+-type semiconductor region NR for a source.
摘要翻译：控制电极GE1形成在形成在半导体衬底SUB中的沟槽TR1的下部，栅电极GE2形成在沟槽TR1内部的上部。在控制电极GE1与沟槽TR1的侧壁和底面之间形成绝缘膜G1，在沟槽TR1的侧壁与栅电极GE2之间形成绝缘膜G2，绝缘膜G3为形成在控制电极GE1和栅电极GE2之间。与沟槽TR1相邻的区域包括用于源极的n +型半导体区域NR，用于沟道形成的p型半导体区域PR和用于漏极的半导体区域。连接到控制电极GE1的布线不连接到与栅电极GE2连接的布线，并且不连接到与源的n +型半导体区域NR连接的布线。

2. 发明授权

US08546223B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08546223B2
公开(公告)日：2013-10-01
申请号：US12889343
申请日：2010-09-23
申请人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
发明人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.
摘要翻译：提高了包括沟槽栅极功率MISFET的半导体器件的特性。半导体器件包括具有设置有功率MISFET的有源区域的基板和位于有源区域的周向外侧并且设有耐击穿结构的外周区域，由设置在基板上的导电膜形成的图案具有介于其间的绝缘膜的外周区域，与图案隔离的另一图案，以及电连接到功率MISFET的栅电极并设置在导电膜上的层中的栅电极端子。图案的导电膜电耦合到栅电极端子，而另一图案的导电膜与栅电极端子电耦合。

3. 发明申请

US20110014761A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110014761A1
公开(公告)日：2011-01-20
申请号：US12889343
申请日：2010-09-23
申请人： Hiroki ARAI , Nobuyuki Shirai , Tsuyoshi Kachi
发明人： Hiroki ARAI , Nobuyuki Shirai , Tsuyoshi Kachi
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.
摘要翻译：提高了包括沟槽栅极功率MISFET的半导体器件的特性。半导体器件包括具有设置有功率MISFET的有源区域的基板和位于有源区域的周向外侧并且设有耐击穿结构的外周区域，由设置在基板上的导电膜形成的图案具有介于其间的绝缘膜的外周区域，与图案隔离的另一图案，以及电连接到功率MISFET的栅电极并设置在导电膜上的层中的栅电极端子。图案的导电膜电耦合到栅电极端子，而另一图案的导电膜与栅电极端子电耦合。

4. 发明授权

US07547001B2 Solenoid valve device installed in gas tank 失效
标题翻译：电磁阀装置安装在气罐中
公开(公告)号：US07547001B2
公开(公告)日：2009-06-16
申请号：US10578033
申请日：2004-11-02
申请人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
发明人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
IPC分类号： F16K31/02
CPC分类号： F16K1/305 , F16K31/0655 , F16K39/024 , F17C13/04 , F17C2205/0326 , F17C2205/0394 , F17C2221/012 , F17C2223/0123 , F17C2223/035 , F17C2265/04 , F17C2265/065 , F17C2270/0168 , F17C2270/0184 , Y02E60/321
摘要： In order to obtain a solenoid valve device installed in a gas tank that is small in size and easy to attach to a gas tank, a valve body (8) including a flow passage (a) formed therein to communicate the inside and the outside of a gas tank (1) is inserted to the inside from the outside through a mouth hole (2) of the gas tank (1) and attached to the mouth hole (2). A valve seat (46) is provided in the flow passage (a), and a movable valve element (40) attached to or detached from the valve seat (46) is provided in the valve body (8). A solenoid unit (48) includes a movable core (50) engaged with the valve element (40) and a fixed core (64) facing the movable core (50) to attract the movable core (50) by the energization of a coil (74) and distract the movable core (50) by the non-energization of the coil (74). The solenoid unit (48) is arranged inside a storage hole (16) formed at an end part of the valve body (8) inside the gas tank (1). A cap member (90) is provided to cover the end part of the valve body (8) inside the gas tank (1). An opening (96) formed in an end face of the cap member (90) communicates with the flow passage (a), and a flat plate-like filter member (102) is disposed in the opening (96).
摘要翻译：为了获得安装在尺寸小且易于附接到气罐的气罐中的电磁阀装置，包括形成在其中的流动通道（a）的阀体（8），用于将内部和外部气罐（1）通过气罐（1）的开口（2）从外部插入到内部，并附着在口孔（2）上。在所述流路（a）中设置有阀座（46），在所述阀体（8）上设置有安装在所述阀座（46）上或与所述阀座分离的可动阀体（40）。螺线管单元（48）包括与阀元件（40）接合的可动芯（50）和面向可动芯（50）的固定芯（64），以通过线圈的通电来吸引可动芯（50） 74），并且通过线圈（74）的不通电来分散可动铁芯（50）。螺线管单元（48）布置在形成在气罐（1）内部的阀体（8）的端部的存储孔（16）的内部。盖构件（90）设置成覆盖气罐（1）内的阀体（8）的端部。形成在盖构件（90）的端面的开口（96）与流路（a）连通，平板状过滤构件（102）设置在开口（96）中。

5. 发明申请

US20090008708A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090008708A1
公开(公告)日：2009-01-08
申请号：US12132610
申请日：2008-06-04
申请人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
发明人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.
摘要翻译：提高了包括沟槽栅极功率MISFET的半导体器件的特性。半导体器件包括具有设置有功率MISFET的有源区域的基板和位于有源区域的周向外侧并且设有耐击穿结构的外周区域，由设置在基板上的导电膜形成的图案具有介于其间的绝缘膜的外周区域，与图案隔离的另一图案，以及电连接到功率MISFET的栅电极并设置在导电膜上的层中的栅电极端子。图案的导电膜电耦合到栅电极端子，而另一图案的导电膜与栅电极端子电耦合。

6. 发明申请

US20080073714A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080073714A1
公开(公告)日：2008-03-27
申请号：US11944343
申请日：2007-11-21
申请人： Nobuyuki SHIRAI , Nobuyoshi Matsuura
发明人： Nobuyuki SHIRAI , Nobuyoshi Matsuura
IPC分类号： H01L23/58
CPC分类号： H01L29/7811 , H01L21/56 , H01L22/32 , H01L23/3107 , H01L23/4824 , H01L23/49562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/94 , H01L29/0615 , H01L29/41766 , H01L29/4238 , H01L29/456 , H01L29/4941 , H01L29/66727 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L2221/6834 , H01L2221/68372 , H01L2224/02166 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05166 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/0615 , H01L2224/1131 , H01L2224/13021 , H01L2224/13144 , H01L2224/14051 , H01L2224/1415 , H01L2224/16 , H01L2224/16245 , H01L2224/32245 , H01L2224/45144 , H01L2224/73153 , H01L2224/73253 , H01L2224/81191 , H01L2224/81203 , H01L2224/94 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/1306 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2224/03 , H01L2224/11 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
摘要翻译：半导体器件包括栅极电极GE，栅极电极GE电连接到栅极部分，栅极部分由沿芯片区域CA的T的方向形成的多个沟槽的内部设置的多晶硅膜制成，其中栅电极GE 形成为与与形成在相邻条形槽之间的源极区域电连接的源极电极SE相同的层级，并且栅电极GE由沿着芯片区域的周边形成的栅电极部分G 1 CA和栅极指部分G 2，其布置成使得芯片区域CA沿着X方向分成两半。源电极SE由相对于栅极指部分G 2的上部和下部构成，并且栅电极GE和源电极SE经由凸块电极连接到引线框架。

7. 发明申请

US20070090317A1 Solenoid valve device installed in gas tank 失效
标题翻译：电磁阀装置安装在气罐中
公开(公告)号：US20070090317A1
公开(公告)日：2007-04-26
申请号：US10578033
申请日：2004-11-02
申请人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
发明人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
IPC分类号： F16K31/02
CPC分类号： F16K1/305 , F16K31/0655 , F16K39/024 , F17C13/04 , F17C2205/0326 , F17C2205/0394 , F17C2221/012 , F17C2223/0123 , F17C2223/035 , F17C2265/04 , F17C2265/065 , F17C2270/0168 , F17C2270/0184 , Y02E60/321
摘要： In order to obtain a solenoid valve device installed in a gas tank that is small in size and easy to attach to a gas tank, a valve body (8) including a flow passage (a) formed therein to communicate the inside and the outside of a gas tank (1) is inserted to the inside from the outside through a mouth hole (2) of the gas tank (1) and attached to the mouth hole (2). A valve seat (46) is provided in the flow passage (a), and a movable valve element (40) attached to or detached from the valve seat (46) is provided in the valve body (8). A solenoid unit (48) includes a movable core (50) engaged with the valve element (40) and a fixed core (64) facing the movable core (50) to attract the movable core (50) by the energization of a coil (74) and distract the movable core (50) by the non-energization of the coil (74). The solenoid unit (48) is arranged inside a storage hole (16) formed at an end part of the valve body (8) inside the gas tank (1). A cap member (90) is provided to cover the end part of the valve body (8) inside the gas tank (1). An opening (96) formed in an end face of the cap member (90) communicates with the flow passage (a), and a flat plate-like filter member (102) is disposed in the opening (96).
摘要翻译：为了获得安装在尺寸小且易于附接到气罐的气罐中的电磁阀装置，包括形成在其中的流动通道（a）的阀体（8），用于将内部和外部气罐（1）通过气罐（1）的开口（2）从外部插入到内部，并附着在口孔（2）上。在所述流路（a）中设置有阀座（46），在所述阀体（8）上设置有安装在所述阀座（46）上或与所述阀座分离的可动阀体（40）。螺线管单元（48）包括与阀元件（40）接合的可动芯（50）和面向可动芯（50）的固定芯（64），以通过线圈的通电来吸引可动芯（50） 74），并且通过线圈（74）的不通电来分散可动铁芯（50）。螺线管单元（48）布置在形成在气罐（1）内部的阀体（8）的端部的存储孔（16）的内部。盖构件（90）设置成覆盖气罐（1）内的阀体（8）的端部。形成在盖构件（90）的端面的开口（96）与流路（a）连通，平板状过滤构件（102）设置在开口（96）内。

8. 发明授权

US08536643B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08536643B2
公开(公告)日：2013-09-17
申请号：US12709260
申请日：2010-02-19
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L21/56 , H01L22/32 , H01L23/3107 , H01L23/4824 , H01L23/49562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/94 , H01L29/0615 , H01L29/41766 , H01L29/4238 , H01L29/456 , H01L29/4941 , H01L29/66727 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L2221/6834 , H01L2221/68372 , H01L2224/02166 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05166 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/0615 , H01L2224/1131 , H01L2224/13021 , H01L2224/13144 , H01L2224/14051 , H01L2224/1415 , H01L2224/16 , H01L2224/16245 , H01L2224/32245 , H01L2224/45144 , H01L2224/73153 , H01L2224/73253 , H01L2224/81191 , H01L2224/81203 , H01L2224/94 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/1306 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2224/03 , H01L2224/11 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
摘要翻译：半导体器件包括栅极电极GE，栅极电极GE电连接到栅极部分，栅极部分由沿芯片区域CA的T的方向形成的多个沟槽的内部设置的多晶硅膜制成，其中栅电极GE 形成为与与形成在相邻条形槽之间的源极区域电连接的源极电极SE相同的层级，并且栅电极GE由沿着芯片区域CA的周边形成的栅电极部分G1 以及栅极指部分G2，其布置成使得芯片区域CA沿着X方向被分成两半。源电极SE由相对于栅极指部分G2的两个上部和下部构成，并且栅极电极GE和源电极SE通过凸块电极连接到引线框架。

9. 发明授权

US08120102B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08120102B2
公开(公告)日：2012-02-21
申请号：US12964651
申请日：2010-12-09
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L21/56 , H01L22/32 , H01L23/3107 , H01L23/4824 , H01L23/49562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/94 , H01L29/0615 , H01L29/41766 , H01L29/4238 , H01L29/456 , H01L29/4941 , H01L29/66727 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L2221/6834 , H01L2221/68372 , H01L2224/02166 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05166 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/0615 , H01L2224/1131 , H01L2224/13021 , H01L2224/13144 , H01L2224/14051 , H01L2224/1415 , H01L2224/16 , H01L2224/16245 , H01L2224/32245 , H01L2224/45144 , H01L2224/73153 , H01L2224/73253 , H01L2224/81191 , H01L2224/81203 , H01L2224/94 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/1306 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2224/03 , H01L2224/11 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
摘要翻译：半导体器件包括栅极电极GE，栅极电极GE电连接到栅极部分，栅极部分由沿芯片区域CA的T的方向形成的多个沟槽的内部设置的多晶硅膜制成，其中栅电极GE 形成为与与形成在相邻条形槽之间的源极区域电连接的源极电极SE相同的层级，并且栅电极GE由沿着芯片区域CA的周边形成的栅电极部分G1 以及栅极指部分G2，其布置成使得芯片区域CA沿着X方向被分成两半。源电极SE由相对于栅极指部分G2的两个上部和下部构成，并且栅极电极GE和源电极SE通过凸块电极连接到引线框架。

10. 发明申请

US20110024802A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110024802A1
公开(公告)日：2011-02-03
申请号：US12901929
申请日：2010-10-11
申请人： NOBUYUKI SHIRAI , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： NOBUYUKI SHIRAI , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L29/812 , H01L29/772
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact region for contact with the metal, the metal being electrically connected to the second semiconductor region, and a center-to-center distance between adjacent first conductors in the first region being smaller than that between adjacent second conductors in the second region.
摘要翻译：为了实现具有功率晶体管和SBD的半导体器件的尺寸的减小，根据本发明的半导体器件包括形成在半导体衬底的主表面上的第一区域和第二区域; 分别形成在第一和第二区域中的多个第一导体和多个第二导体; 形成在所述第一区域中的相邻第一导体之间的第一半导体区域和第二半导体区域，所述第二半导体区域位于所述第一半导体区域中并具有与所述第一半导体区域相反的导电类型; 形成在所述第二区域的相邻的第二导体之间的第三半导体区域，所述第三半导体区域具有与所述第二半导体区域相同的导电类型，并且密度低于所述第二半导体区域; 在所述第二区域中形成在所述半导体衬底上的金属，所述第三半导体区域具有用于与所述金属接触的金属接触区域，所述金属电连接到所述第二半导体区域，以及相邻的第一导体之间的中心到中心距离在所述第一区域中小于所述第二区域中相邻的第二导体之间的距离。

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