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1. 发明申请

US20160351702A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160351702A1
公开(公告)日：2016-12-01
申请号：US14406991
申请日：2014-01-31
申请人： Hideo Numabe , Nobuyuki Shirai , Hirokazu Kato , Tomoaki Uno , Kazuyuki Umezu
发明人： Hideo Numabe , Nobuyuki Shirai , Hirokazu Kato , Tomoaki Uno , Kazuyuki Umezu
IPC分类号： H01L29/78 , H01L29/40 , H01L29/06 , H01L29/10 , H01L23/535 , H01L29/417 , H01L29/423 , H01L29/08
CPC分类号： H01L29/7813 , H01L23/535 , H01L29/0696 , H01L29/0865 , H01L29/0882 , H01L29/1033 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L2224/05554 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： A control electrode GE1 is formed in a lower portion of a trench TR1 formed in a semiconductor substrate SUB, and a gate electrode GE2 is formed in an upper portion inside the trench TR1. An insulating film G1 is formed between the control electrode GE1 and a side wall and a bottom surface of the trench TR1, an insulating film G2 is formed between the side wall of the trench TR1 and the gate electrode GE2, and an insulating film G3 is formed between the control electrode GE1 and the gate electrode GE2. A region adjacent to the trench TR1 includes an n+-type semiconductor region NR for a source, a p-type semiconductor region PR for a channel formation, and a semiconductor region for a drain. A wiring connected to the control electrode GE1 is not connected to a wiring connected to the gate electrode GE2, and is not connected to a wiring connected to the n+-type semiconductor region NR for a source.
摘要翻译：控制电极GE1形成在形成在半导体衬底SUB中的沟槽TR1的下部，栅电极GE2形成在沟槽TR1内部的上部。在控制电极GE1与沟槽TR1的侧壁和底面之间形成绝缘膜G1，在沟槽TR1的侧壁与栅电极GE2之间形成绝缘膜G2，绝缘膜G3为形成在控制电极GE1和栅电极GE2之间。与沟槽TR1相邻的区域包括用于源极的n +型半导体区域NR，用于沟道形成的p型半导体区域PR和用于漏极的半导体区域。连接到控制电极GE1的布线不连接到与栅电极GE2连接的布线，并且不连接到与源的n +型半导体区域NR连接的布线。

2. 发明授权

US08426910B2 Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode 有权
标题翻译：用于电源电路并具有功率MOSFET和肖特基势垒二极管的半导体器件
公开(公告)号：US08426910B2
公开(公告)日：2013-04-23
申请号：US13467536
申请日：2012-05-09
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L29/76
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is formed on a semiconductor substrate with a Schottky barrier diode. First gate electrodes of the second MOSFET are formed in trenches in a first region of the semiconductor substrate, while second gate electrodes of the second MOSFET are formed in trenches in a second region of the semiconductor substrate. The first and second gate electrodes are electrically connected together. Portions of the Schottky barrier diode are formed between adjacent ones of the second gate electrodes. A center-to-center spacing between adjacent first gate electrodes is smaller than a center-to-center spacing between adjacent second gate electrodes.
摘要翻译：用于电源电路的半导体器件具有第一和第二MOSFET。 MOSFET之一的源极 - 漏极路径耦合到另一个MOSFET的源极 - 漏极路径，并且负载元件耦合到源极 - 漏极路径的连接节点。第二MOSFET形成在具有肖特基势垒二极管的半导体衬底上。第二MOSFET的第一栅电极形成在半导体衬底的第一区域中的沟槽中，而第二MOSFET的第二栅电极形成在半导体衬底的第二区域中的沟槽中。第一和第二栅极电连接在一起。在相邻的第二栅电极之间形成肖特基势垒二极管的部分。相邻的第一栅电极之间的中心到中心的间隔小于相邻的第二栅电极之间的中心间距。

3. 发明授权

US08193578B2 Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction 失效
标题翻译：电源电路具有包括MOSFET和肖特基结的半导体器件
公开(公告)号：US08193578B2
公开(公告)日：2012-06-05
申请号：US13214131
申请日：2011-08-19
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L29/76
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： A power supply circuit includes first and second switching MOSFETS. A semiconductor device, including the second switching MOSFET, has a plurality of transistor cell regions disposed in a semiconductor substrate. A source electrode of the second MOSFET is disposed over a main surface of the semiconductor substrate and is in contact with a top surface of a source region in each of the plurality of transistor cell regions. A drain electrode of the second MOSFET is disposed over a back surface of the semiconductor substrate and is electrically connected to the semiconductor substrate. A Schottky cell region is disposed between the plurality of transistor cell regions in the semiconductor substrate. The source electrode is in contact with a part of the main surface of the semiconductor so as to form a Schottky junction in the Schottky cell region.
摘要翻译：电源电路包括第一和第二开关MOSFET。包括第二开关MOSFET的半导体器件具有设置在半导体衬底中的多个晶体管单元区域。第二MOSFET的源电极设置在半导体衬底的主表面上，并且与多个晶体管单元区域中的每一个中的源极区域的顶表面接触。第二MOSFET的漏电极设置在半导体衬底的背面上并与半导体衬底电连接。肖特基电池区设置在半导体衬底中的多个晶体管单元区域之间。源电极与半导体的主表面的一部分接触，以便在肖特基电池区域中形成肖特基结。

4. 发明授权

US07518208B2 Semiconductor device having power transistors and Schottky barrier diode 有权
标题翻译：具有功率晶体管和肖特基势垒二极管的半导体器件
公开(公告)号：US07518208B2
公开(公告)日：2009-04-14
申请号：US11482765
申请日：2006-07-10
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L29/47
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： A semiconductor device has a first region and a second region formed on a surface of a substrate. Plural first conductors and second conductors are formed in the first and second regions respectively. A first semiconductor region and a second semiconductor region are formed between adjacent first conductors. The second semiconductor region is in the first semiconductor region and has a conductivity type opposite to that of the first semiconductor. A third semiconductor region is formed between adjacent second conductors. The third semiconductor region has the same conductivity type as the second semiconductor region and is lower in density than the second semiconductor region. The third semiconductor region has a metal contact region for contact with a metal, which is electrically connected to the second semiconductor region. A center-to-center distance between adjacent first conductors is smaller than that between adjacent second conductors.
摘要翻译：半导体器件具有形成在衬底的表面上的第一区域和第二区域。多个第一导体和第二导体分别形成在第一和第二区域中。在相邻的第一导体之间形成第一半导体区域和第二半导体区域。第二半导体区域处于第一半导体区域并具有与第一半导体区域相反的导电类型。在相邻的第二导体之间形成第三半导体区域。第三半导体区域具有与第二半导体区域相同的导电类型，并且密度低于第二半导体区域。第三半导体区域具有与金属接触的金属接触区域，其与第二半导体区域电连接。相邻的第一导体之间的中心到中心的距离小于相邻的第二导体之间的距离。

5. 发明授权

US07307406B2 Switching power supply device and a semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US07307406B2
公开(公告)日：2007-12-11
申请号：US11510819
申请日：2006-08-28
申请人： Nobuyuki Shirai , Ryotaro Kudo
发明人： Nobuyuki Shirai , Ryotaro Kudo
IPC分类号： G05F1/40
CPC分类号： H03K17/6871 , H02M3/1588 , H02M2001/0032 , H02M2001/0048 , H03K17/165 , Y02B70/1466 , Y02B70/1491 , Y02B70/16
摘要： A capacitor is disposed between the output side and the ground potential of an inductor which creates an output voltage. A first switch element supplies a current from an input voltage to an input side of the inductor, and a second switch element which is turned on when the first switch element is off sets the input side of the inductor to a prescribed potential. A control circuit detects the arrival of the voltage on the input side of the inductor at a high voltage corresponding to the input voltage when the load circuit is in a light load state and the second switch element is off, and turns on the first switch element. It invalidates the detection output of the voltage detecting circuit when the load circuit is in a heavy load state and, after the second switch element is turned off, turns on the first switch element.
摘要翻译：电感器设置在产生输出电压的电感器的输出侧和接地电位之间。第一开关元件将电流从输入电压提供给电感器的输入侧，并且当第一开关元件断开时导通的第二开关元件将电感器的输入侧设定为规定电位。当负载电路处于轻负载状态并且第二开关元件断开时，控制电路以对应于输入电压的高电压检测电感器的输入侧的电压到达，并且接通第一开关元件。当负载电路处于重负载状态时，使电压检测电路的检测输出无效，并且在第二开关元件断开之后，导通第一开关元件。

6. 发明授权

US08546223B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08546223B2
公开(公告)日：2013-10-01
申请号：US12889343
申请日：2010-09-23
申请人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
发明人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.
摘要翻译：提高了包括沟槽栅极功率MISFET的半导体器件的特性。半导体器件包括具有设置有功率MISFET的有源区域的基板和位于有源区域的周向外侧并且设有耐击穿结构的外周区域，由设置在基板上的导电膜形成的图案具有介于其间的绝缘膜的外周区域，与图案隔离的另一图案，以及电连接到功率MISFET的栅电极并设置在导电膜上的层中的栅电极端子。图案的导电膜电耦合到栅电极端子，而另一图案的导电膜与栅电极端子电耦合。

7. 发明申请

US20110014761A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110014761A1
公开(公告)日：2011-01-20
申请号：US12889343
申请日：2010-09-23
申请人： Hiroki ARAI , Nobuyuki Shirai , Tsuyoshi Kachi
发明人： Hiroki ARAI , Nobuyuki Shirai , Tsuyoshi Kachi
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.
摘要翻译：提高了包括沟槽栅极功率MISFET的半导体器件的特性。半导体器件包括具有设置有功率MISFET的有源区域的基板和位于有源区域的周向外侧并且设有耐击穿结构的外周区域，由设置在基板上的导电膜形成的图案具有介于其间的绝缘膜的外周区域，与图案隔离的另一图案，以及电连接到功率MISFET的栅电极并设置在导电膜上的层中的栅电极端子。图案的导电膜电耦合到栅电极端子，而另一图案的导电膜与栅电极端子电耦合。

8. 发明授权

US07547001B2 Solenoid valve device installed in gas tank 失效
标题翻译：电磁阀装置安装在气罐中
公开(公告)号：US07547001B2
公开(公告)日：2009-06-16
申请号：US10578033
申请日：2004-11-02
申请人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
发明人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
IPC分类号： F16K31/02
CPC分类号： F16K1/305 , F16K31/0655 , F16K39/024 , F17C13/04 , F17C2205/0326 , F17C2205/0394 , F17C2221/012 , F17C2223/0123 , F17C2223/035 , F17C2265/04 , F17C2265/065 , F17C2270/0168 , F17C2270/0184 , Y02E60/321
摘要： In order to obtain a solenoid valve device installed in a gas tank that is small in size and easy to attach to a gas tank, a valve body (8) including a flow passage (a) formed therein to communicate the inside and the outside of a gas tank (1) is inserted to the inside from the outside through a mouth hole (2) of the gas tank (1) and attached to the mouth hole (2). A valve seat (46) is provided in the flow passage (a), and a movable valve element (40) attached to or detached from the valve seat (46) is provided in the valve body (8). A solenoid unit (48) includes a movable core (50) engaged with the valve element (40) and a fixed core (64) facing the movable core (50) to attract the movable core (50) by the energization of a coil (74) and distract the movable core (50) by the non-energization of the coil (74). The solenoid unit (48) is arranged inside a storage hole (16) formed at an end part of the valve body (8) inside the gas tank (1). A cap member (90) is provided to cover the end part of the valve body (8) inside the gas tank (1). An opening (96) formed in an end face of the cap member (90) communicates with the flow passage (a), and a flat plate-like filter member (102) is disposed in the opening (96).
摘要翻译：为了获得安装在尺寸小且易于附接到气罐的气罐中的电磁阀装置，包括形成在其中的流动通道（a）的阀体（8），用于将内部和外部气罐（1）通过气罐（1）的开口（2）从外部插入到内部，并附着在口孔（2）上。在所述流路（a）中设置有阀座（46），在所述阀体（8）上设置有安装在所述阀座（46）上或与所述阀座分离的可动阀体（40）。螺线管单元（48）包括与阀元件（40）接合的可动芯（50）和面向可动芯（50）的固定芯（64），以通过线圈的通电来吸引可动芯（50） 74），并且通过线圈（74）的不通电来分散可动铁芯（50）。螺线管单元（48）布置在形成在气罐（1）内部的阀体（8）的端部的存储孔（16）的内部。盖构件（90）设置成覆盖气罐（1）内的阀体（8）的端部。形成在盖构件（90）的端面的开口（96）与流路（a）连通，平板状过滤构件（102）设置在开口（96）中。

9. 发明申请

US20090008708A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090008708A1
公开(公告)日：2009-01-08
申请号：US12132610
申请日：2008-06-04
申请人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
发明人： Hiroki Arai , Nobuyuki Shirai , Tsuyoshi Kachi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： The characteristics of a semiconductor device including a trench-gate power MISFET are improved. The semiconductor device includes a substrate having an active region where the power MISFET is provided and an outer circumferential region which is located circumferentially outside the active region and where a breakdown resistant structure is provided, a pattern formed of a conductive film provided over the substrate in the outer circumferential region with an insulating film interposed therebetween, another pattern isolated from the pattern, and a gate electrode terminal electrically coupled to the gate electrodes of the power MISFET and provided in a layer over the conductive film. The conductive film of the pattern is electrically coupled to the gate electrode terminal, while the conductive film of another pattern is electrically decoupled from the gate electrode terminal.
摘要翻译：提高了包括沟槽栅极功率MISFET的半导体器件的特性。半导体器件包括具有设置有功率MISFET的有源区域的基板和位于有源区域的周向外侧并且设有耐击穿结构的外周区域，由设置在基板上的导电膜形成的图案具有介于其间的绝缘膜的外周区域，与图案隔离的另一图案，以及电连接到功率MISFET的栅电极并设置在导电膜上的层中的栅电极端子。图案的导电膜电耦合到栅电极端子，而另一图案的导电膜与栅电极端子电耦合。

10. 发明申请

US20070090317A1 Solenoid valve device installed in gas tank 失效
标题翻译：电磁阀装置安装在气罐中
公开(公告)号：US20070090317A1
公开(公告)日：2007-04-26
申请号：US10578033
申请日：2004-11-02
申请人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
发明人： Tadayoshi Kamiya , Soichi Shirai , Mikio Asai , Nobuyuki Shirai , Yoshiyuki Takeuchi , Toshihiko Shima , Hiroaki Suzuki
IPC分类号： F16K31/02
CPC分类号： F16K1/305 , F16K31/0655 , F16K39/024 , F17C13/04 , F17C2205/0326 , F17C2205/0394 , F17C2221/012 , F17C2223/0123 , F17C2223/035 , F17C2265/04 , F17C2265/065 , F17C2270/0168 , F17C2270/0184 , Y02E60/321
摘要： In order to obtain a solenoid valve device installed in a gas tank that is small in size and easy to attach to a gas tank, a valve body (8) including a flow passage (a) formed therein to communicate the inside and the outside of a gas tank (1) is inserted to the inside from the outside through a mouth hole (2) of the gas tank (1) and attached to the mouth hole (2). A valve seat (46) is provided in the flow passage (a), and a movable valve element (40) attached to or detached from the valve seat (46) is provided in the valve body (8). A solenoid unit (48) includes a movable core (50) engaged with the valve element (40) and a fixed core (64) facing the movable core (50) to attract the movable core (50) by the energization of a coil (74) and distract the movable core (50) by the non-energization of the coil (74). The solenoid unit (48) is arranged inside a storage hole (16) formed at an end part of the valve body (8) inside the gas tank (1). A cap member (90) is provided to cover the end part of the valve body (8) inside the gas tank (1). An opening (96) formed in an end face of the cap member (90) communicates with the flow passage (a), and a flat plate-like filter member (102) is disposed in the opening (96).
摘要翻译：为了获得安装在尺寸小且易于附接到气罐的气罐中的电磁阀装置，包括形成在其中的流动通道（a）的阀体（8），用于将内部和外部气罐（1）通过气罐（1）的开口（2）从外部插入到内部，并附着在口孔（2）上。在所述流路（a）中设置有阀座（46），在所述阀体（8）上设置有安装在所述阀座（46）上或与所述阀座分离的可动阀体（40）。螺线管单元（48）包括与阀元件（40）接合的可动芯（50）和面向可动芯（50）的固定芯（64），以通过线圈的通电来吸引可动芯（50） 74），并且通过线圈（74）的不通电来分散可动铁芯（50）。螺线管单元（48）布置在形成在气罐（1）内部的阀体（8）的端部的存储孔（16）的内部。盖构件（90）设置成覆盖气罐（1）内的阀体（8）的端部。形成在盖构件（90）的端面的开口（96）与流路（a）连通，平板状过滤构件（102）设置在开口（96）内。

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