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1. 发明申请

US20100225330A1 Method of testing electric fuse, and electric fuse circuit 审中-公开
标题翻译：电熔丝和电熔丝电路测试方法
公开(公告)号：US20100225330A1
公开(公告)日：2010-09-09
申请号：US12659271
申请日：2010-03-02
申请人： Naotake Watanabe
发明人： Naotake Watanabe
IPC分类号： G01R31/02
CPC分类号： G01R31/07 , G11C29/02 , G11C29/027 , G11C29/785
摘要： An object of the present invention is to provide a method of testing an electric fuse which enables to reduce a time for testing. The method of testing an electric fuse according to the present invention comprises: selecting a plurality of disconnection-targeted fuses among a plurality of electric fuses; disconnecting a plurality of disconnection-targeted fuse blocks in tern, each of which includes at least one disconnection-targeted fuse; electrically connecting one terminal of each of the plurality of disconnection-targeted fuses to a first node and connecting another terminal of the each disconnection-targeted fuse to a second node, after disconnecting; and judging whether or not all of said plurality of disconnection-targeted fuses are disconnected after electrically connecting, by applying a voltage to the first node to judge whether or not a current flows between the first node and the second node.
摘要翻译：本发明的目的是提供一种能够减少测试时间的电熔丝的测试方法。根据本发明的电熔丝的测试方法包括：在多个电保险丝中选择多个断线目标保险丝; 断开天线中的多个断线目标熔丝块，其中每一个包括至少一个断线目标熔丝; 在断开连接之后，将多个断线目标保险丝中的每一个的一个端子电连接到第一节点并将每个断开目标保险丝的另一个终端连接到第二节点; 以及通过向所述第一节点施加电压以判断在所述第一节点和所述第二节点之间是否流动电流，判断所述多个所述多个断线目标保险丝是否在电连接之后被断开。

2. 发明申请

US20060164813A1 Semiconductor package and semiconductor module 审中-公开
标题翻译：半导体封装和半导体模块
公开(公告)号：US20060164813A1
公开(公告)日：2006-07-27
申请号：US11289487
申请日：2005-11-30
申请人： Shimpei Yoshioka , Yukihiro Ikeya , Naotake Watanabe , Nobumitsu Tada , Masakazu Shindome
发明人： Shimpei Yoshioka , Yukihiro Ikeya , Naotake Watanabe , Nobumitsu Tada , Masakazu Shindome
IPC分类号： H05K7/20
CPC分类号： H01L23/49844 , H01L24/34 , H01L24/37 , H01L2224/37124 , H01L2224/37599 , H01L2224/45124 , H01L2224/48137 , H01L2224/4847 , H01L2224/48472 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor package includes a plate-like semiconductor element having a first power terminal and a control terminal on a main surface, and a second power terminal on a rear surface; a first power electrode plate positioned to face with the main surface of the semiconductor element, and including a first power electrode joined to the first power terminal by soldering; a second power electrode plate positioned to face with the rear surface of the semiconductor element, and including a second power electrode joined to the second power terminal by soldering; and an insulating substrate positioned between the semiconductor element and the first electrode plate, and including a control electrode joined to the control terminal by soldering.
摘要翻译：半导体封装包括在主表面上具有第一电源端子和控制端子的板状半导体元件和在后表面上的第二电源端子; 定位成与半导体元件的主表面相对的第一电极板，并且包括通过焊接而与第一电源端子接合的第一电力电极; 定位成与半导体元件的后表面相对的第二电极板，并且包括通过焊接连接到第二电源端子的第二电源电极; 以及位于所述半导体元件和所述第一电极板之间的绝缘基板，并且包括通过焊接而与所述控制端子接合的控制电极。

3. 发明授权

US5154905A Method for producing unsintered cristobalite particles 失效
标题翻译：生产未烧结方石英颗粒的方法
公开(公告)号：US5154905A
公开(公告)日：1992-10-13
申请号：US814051
申请日：1991-12-26
申请人： Iwao Ohshima , Koichi Orii , Naotake Watanabe , Yasumasa Yamaguchi
发明人： Iwao Ohshima , Koichi Orii , Naotake Watanabe , Yasumasa Yamaguchi
IPC分类号： C01B33/12 , C01B33/18 , C03B19/10 , C04B14/06
CPC分类号： C04B14/06 , C01B33/12 , C03B19/1095
摘要： A method for producing a nonsintered cristobalite particles comprising heating amorphous silica particles at a temperature of 1400.degree. to 1700.degree. C. in the presence of cristobalite particles (hereinafter referred to as cristobalite particles for addition and mixing) of at least 5 parts by weight based on 100 parts by weight of said amorphous silica particles to convert said amorphous silica particles to cristobalite particles with their particle form kept unchanged. According to the present invention, dense cristobalite having a low alkali content can be obtained in the form of particles. Such cristobalite is used as a filler, a dispersing agent, etc., and also as a material for high-quality artificial quartz, ceramics, etc., and particularly as a material for transparent quartz glass because of its generating no bubbles at the time of melt-molding.
摘要翻译：一种非烧结方英石颗粒的制造方法，其包括在方沸石颗粒（以下称为方石英颗粒添加和混合）存在下，在1400〜1700℃的温度下加热至少5重量份的无定形二氧化硅颗粒，在100重量份的所述无定形二氧化硅颗粒上将所述无定形二氧化硅颗粒转化为方英石颗粒，其颗粒形式保持不变。根据本发明，可以以颗粒的形式获得具有低碱含量的致密方英石。这种方英石作为填料，分散剂等，也可以作为高品质的人造石英，陶瓷等的材料，特别是作为透明石英玻璃的材料，因为在此时不产生气泡的熔融成型。

4. 发明申请

US20060156119A1 Semiconductor apparatus and clock generation unit 有权
公开(公告)号：US20060156119A1
公开(公告)日：2006-07-13
申请号：US11297321
申请日：2005-12-09
申请人： Naotake Watanabe
发明人： Naotake Watanabe
IPC分类号： G01R31/28
CPC分类号： G01R31/318552
摘要： A semiconductor apparatus generates a clock signal used for scan test on an internal circuit of the semiconductor apparatus. The semiconductor apparatus includes a scan chain for performing input and output of data in the internal circuit, a clock generator for generating a launch clock signal for sending data to the internal circuit and a capture clock signal for capturing data from the internal circuit. The launch clock signal and the capture clock signal are generated based on a plurality of clock signals having different phases, and a pulse width of the plurality of clock signals is smaller than half of a cycle of the plurality of clock signals.

5. 发明授权

US5202104A Process for preparing silica having a low silanol content 失效
标题翻译：制备低硅烷含量的二氧化硅的方法
公开(公告)号：US5202104A
公开(公告)日：1993-04-13
申请号：US481235
申请日：1990-02-20
申请人： Naotake Watanabe , Koichi Orii , Junsuke Yagi , Iwao Ohshima
发明人： Naotake Watanabe , Koichi Orii , Junsuke Yagi , Iwao Ohshima
IPC分类号： C01B33/12 , C01B33/16 , C03C12/00
CPC分类号： C03C12/00 , C01B33/126 , C01B33/16
摘要： A process for preparing silica having a low silanol content which comprises heating amorphous silica in an atmosphere of a low partial pressure of water vapor to maintain the amorphous silica at a temperature in a range of from 600.degree. to 1000.degree. C. at a first heating step and then maintain at a temperature of 1200.degree. C. or more at a second heating step. The silica having a low silanol content obtained according to the present invention is advantageously used as a raw material for quartz glass, particularly as a raw material for preparing crucibles used to pull up silicon single crystals.

6. 发明授权

US4853198A Process for producing unsintered cristobalite silica 失效
标题翻译：生产未烧结方英石二氧化硅的方法
公开(公告)号：US4853198A
公开(公告)日：1989-08-01
申请号：US169548
申请日：1988-03-17
申请人： Koichi Orii , Iwao Ohshima , Naotake Watanabe
发明人： Koichi Orii , Iwao Ohshima , Naotake Watanabe
IPC分类号： C03B20/00 , C01B33/12 , C03C1/02
CPC分类号： C01B33/12 , C03C1/022
摘要： There is disclosed a process for producing unsintered cristobalite silica by heating an amorphous silica in the presence of an alkali component, which comprises heating an amorphous silica having a specific surface area (measured according to BET method) of 50 m.sup.2 /g or more at a temperature in the range of 1000.degree. to 1300.degree. C., in the presence of an alkali metal element in a concentration of 5 to 600 ppm to said silica to change it partially or completely into cristobalite and then heating at a temperature of exceeding 1300.degree. C. to eliminate alkali.

7. 发明授权

US07750448B2 Semiconductor package and method for manufacturing the same 失效
标题翻译：半导体封装及其制造方法
公开(公告)号：US07750448B2
公开(公告)日：2010-07-06
申请号：US12237639
申请日：2008-09-25
申请人： Shimpei Yoshioka , Naotake Watanabe
发明人： Shimpei Yoshioka , Naotake Watanabe
IPC分类号： H01L23/495
CPC分类号： H01L23/492 , H01L23/051 , H01L2924/0002 , H01L2924/01079 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor package includes a semiconductor device having a first main surface and a second main surface, a first electrode plate provided on the first main surface, a second electrode plate provided on the second main surface, and a wiring substrate provided between the semiconductor device and the first electrode plate, in which a plurality of opening portions in the side surface of a protruding portion provided on the first electrode plate are engaged respectively with a plurality of engaging portions which face the opening portions and which are provided on the inner side surface of an intrusion opening portion in the wiring substrate into which the protruding portion is intruded.
摘要翻译：半导体封装包括具有第一主表面和第二主表面的半导体器件，设置在第一主表面上的第一电极板，设置在第二主表面上的第二电极板，以及设置在半导体器件和第一电极板，其中设置在第一电极板上的突出部分的侧表面中的多个开口部分分别与面对开口部分的多个接合部分接合，并且设置在第一电极板的内侧表面上所述布线基板中的入射开口部分突出部分被插入其中。

8. 发明申请

US20100006888A1 METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE, OPTICAL SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：制造光学半导体器件的方法，光学半导体器件以及制造光学半导体器件的方法
公开(公告)号：US20100006888A1
公开(公告)日：2010-01-14
申请号：US12498482
申请日：2009-07-07
申请人： Naotake WATANABE , Izuru Komatsu , Kazuo Shimokawa , Hisashi Ito
发明人： Naotake WATANABE , Izuru Komatsu , Kazuo Shimokawa , Hisashi Ito
IPC分类号： H01L33/00 , H01L21/56
CPC分类号： H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： Provided is a method of manufacturing an optical semiconductor device, the method including: providing a resin layer on a light-emitting substrate to cover a principle surface of the light-emitting substrate, the light-emitting substrate including a pair of electrodes in each section of the principle surface, the resin layer including multiple holes each exposing two of the electrodes located adjacent to each other but in the different sections; providing post electrodes respectively on all the paired electrodes formed in all the sections by filling a conductive material in the holes of the resin layer on the principal surface; and forming multiple optical semiconductor devices by cutting the light-emitting substrate into sections, the light-emitting substrate provided with the post electrodes respectively on all the paired electrodes formed in all the sections.
摘要翻译：提供一种制造光半导体器件的方法，该方法包括：在发光基板上设置树脂层以覆盖发光基板的主表面，所述发光基板在每个部分中包括一对电极所述树脂层包括多个孔，每个孔暴露位于彼此相邻但在不同部分中的两个电极; 通过在主表面上的树脂层的孔中填充导电材料，分别在所有部分形成的所有成对电极上分别提供柱状电极; 并且通过将发光基板切割成多个部分形成多个光学半导体器件，分别在所有部分上形成的所有成对电极上设置有柱状电极的发光基板。

9. 发明授权

US07982299B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US07982299B2
公开(公告)日：2011-07-19
申请号：US12190941
申请日：2008-08-13
申请人： Naotake Watanabe
发明人： Naotake Watanabe
IPC分类号： H01L23/52
CPC分类号： H01L23/492 , H01L23/50 , H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： Included are a semiconductor package, a first bus bar, a second bus bar and a soldering control unit. The semiconductor package includes a power semiconductor element, a first electrode plate and a second electrode plate. The first bus bar is a conductive member which is soldered onto the main surface of the first electrode plate through a first solder member. The second bus bar is a conductive member which is soldered onto the main surface of the second electrode plate through a second solder member. The soldering control unit is provided on each of the main surface of the first bus bar to which the first electrode plate is soldered and the main surface of the second bus bar to which the second electrode plate is soldered, and controls the solder joint thickness.
摘要翻译：包括半导体封装，第一母线，第二母线和焊接控制单元。半导体封装包括功率半导体元件，第一电极板和第二电极板。第一母线是通过第一焊料焊接到第一电极板的主表面上的导电构件。第二母线是通过第二焊料焊接到第二电极板的主表面上的导电构件。焊接控制单元设置在第一汇流条的第一电极板被焊接的主表面和焊接第二电极板的第二汇流条的主表面上的每个主表面上，并控制焊点厚度。

10. 发明申请

US20100075719A1 CELLULAR PHONE 审中-公开
标题翻译：手机
公开(公告)号：US20100075719A1
公开(公告)日：2010-03-25
申请号：US12560820
申请日：2009-09-16
申请人： Taizo TOMIOKA , Naotake Watanabe
发明人： Taizo TOMIOKA , Naotake Watanabe
IPC分类号： H04M1/00 , H04B1/38
CPC分类号： H04M1/026
摘要： An example of the present invention is a cellular phone including, a plate-like portion of a metallic material having at least one of a display section and an input key unit located on one principal surface side thereof, and a frame side portion including a frame-like elongated member of an insulating material and disposed at an outer peripheral part of the plate-like portion, a dimension of the elongated member constituting the frame side portion in a thickness direction intersecting the principal surface being smaller than a dimension of the elongated member in a width direction intersecting the thickness direction.
摘要翻译：本发明的一个实例是一种蜂窝电话，其包括金属材料的板状部分，其具有位于其一个主表面侧上的显示部分和输入键单元中的至少一个，框架侧部分包括框架绝缘材料的细长构件，并且设置在板状部分的外周部分处，构成框架侧部分的细长构件在与主表面相交的厚度方向上的尺寸小于细长构件的尺寸在与厚度方向交叉的宽度方向上。

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