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1. 发明申请

US20100014344A1 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof 有权
标题翻译：可切换双端子多层钙钛矿薄膜电阻器件及其方法
公开(公告)号：US20100014344A1
公开(公告)日：2010-01-21
申请号：US12586147
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

2. 发明授权

US5914811A Birefringent grating polarizing beam splitter 失效
标题翻译：双折射光栅偏振分束器
公开(公告)号：US5914811A
公开(公告)日：1999-06-22
申请号：US706309
申请日：1996-08-30
申请人： Yansong Chen , Shangquiq Liu , Alex Ignatiev , NaiJuan Wu
发明人： Yansong Chen , Shangquiq Liu , Alex Ignatiev , NaiJuan Wu
IPC分类号： G02B5/18 , G02B5/30
CPC分类号： G02B27/285 , G02B27/4277 , G02B5/1814
摘要： A birefringence polarizing beam-splitter is provided. A series of periodic blazed grooves or grooves with echelon profile having a number of steps is provided on the surface of an optically birefringent material. The birefringent substrate material may be crystalline or plastic. In another embodiment, two substrates of birefringent material having a series of periodic blazed grooves or grooves with echelon profile are combined to achieve greater angle of beam splitting.
摘要翻译：提供双折射偏振分束器。在光学双折射材料的表面上提供一系列具有多个台阶的梯形轮廓的周期性闪耀的槽或槽。双折射衬底材料可以是结晶或塑料。在另一个实施例中，组合具有一系列具有梯形轮廓的周期性闪耀的凹槽或凹槽的双折射材料的两个基板以实现更大的分束角度。

3. 发明授权

US08409879B2 Method of using a buffered electric pulse induced resistance device 有权
标题翻译：使用缓冲电脉冲感应电阻器件的方法
公开(公告)号：US08409879B2
公开(公告)日：2013-04-02
申请号：US13068884
申请日：2011-05-23
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01C7/006 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/31 , G11C2213/51 , H01C17/06533 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。所选择的电脉冲持续时间在约8纳秒至约100毫秒的范围内。所选择的电脉冲的最大值在约1V至约150V的范围内。电脉冲可以具有正方形，锯齿形，三角形，正弦，振荡或其它波形，并且可以是正极性或负极性。

4. 发明授权

US07955871B2 Method of using a switchable resistive perovskite microelectronic device with multi-layer thin film structure 有权
标题翻译：使用具有多层薄膜结构的可切换电阻钙钛矿微电子器件的方法
公开(公告)号：US07955871B2
公开(公告)日：2011-06-07
申请号：US12586143
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

5. 发明授权

US06473332B1 Electrically variable multi-state resistance computing 有权
标题翻译：电可变多态电阻计算
公开(公告)号：US06473332B1
公开(公告)日：2002-10-29
申请号：US09826386
申请日：2001-04-04
申请人： Alex Ignatiev , Naijuan Wu , Shangqing Liu , E. Joseph Charlson
发明人： Alex Ignatiev , Naijuan Wu , Shangqing Liu , E. Joseph Charlson
IPC分类号： G11C1100
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31
摘要： An electrically operated, overwritable, multivalued, non-volatile resistive memory element is disclosed. The memory element includes a two terminal non-volatile memory device in which a memory film material is included, and a circuit topological configuration is defined. The memory device relates generally to a unique new electrically induced variable resistance effect, which has been discovered in thin films of colossal magnetoresistive (CMR) oxide materials. The memory material is characterized by: 1) the electrical control of resistance through the application of short duration low voltage electrical pulses at room temperature and with no applied magnetic field; 2) increase of the resistance or decrease of the resistance depending on the polarity of the applied pulses; 3) a large dynamic range of electrical resistance values; and 4) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit/multivalued storage capabilities. The memory element includes a circuit topology to construct a ROM/RAM configuration. The features of the memory element circuit are: 1) the ability to set and then measure the resistance of the two terminal multi-valued memory devices with negligible effects of sampling voltage and current; and 2) the ability to step up or down the resistance value, i. e., to set one of multiple number of resistance states, with repeated applications of pulses of varying amplitude.
摘要翻译：公开了电操作的，可重写的，多值的，非易失性的电阻式存储元件。存储元件包括其中包括存储器薄膜材料的二端非易失性存储器件，并且定义了电路拓扑结构。存储器件通常涉及一种独特的新的电感可变电阻效应，其已经在巨磁阻（CMR）氧化物材料的薄膜中发现。记忆材料的特征在于：1）通过在室温下施加短时间低电压电脉冲并且没有施加磁场，对电阻进行电气控制; 2）根据施加的脉冲的极性，电阻的增加或电阻的降低; 3）动态范围大的电阻值; 以及4）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位/多值存储能力。存储元件包括构成ROM / RAM配置的电路拓扑。存储元件电路的特点是：1）能够以可忽略的采样电压和电流影响设置并测量两端多值存储器件的电阻; 和2）升高或降低电阻值的能力，i。即，设置多个电阻状态之一，重复应用具有变化幅度的脉冲。

6. 发明申请

US20110304423A1 Method of using a buffered electric pulse induced resistance device 有权
标题翻译：使用缓冲电脉冲感应电阻器件的方法
公开(公告)号：US20110304423A1
公开(公告)日：2011-12-15
申请号：US13068884
申请日：2011-05-23
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01C1/012
CPC分类号： H01C7/006 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/31 , G11C2213/51 , H01C17/06533 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。所选择的电脉冲持续时间在约8纳秒至约100毫秒的范围内。所选择的电脉冲的最大值在约1V至约150V的范围内。电脉冲可以具有正方形，锯齿形，三角形，正弦，振荡或其它波形，并且可以是正极性或负极性。

7. 发明申请

US20060240575A1 Thin film optical detectors for retinal implantation and methods for making and using same 有权
公开(公告)号：US20060240575A1
公开(公告)日：2006-10-26
申请号：US11475307
申请日：2006-06-27
申请人： NaiJuan Wu , Ali Zomorrodian , Alex Ignatiev
发明人： NaiJuan Wu , Ali Zomorrodian , Alex Ignatiev
IPC分类号： H01L21/00 , A61F2/16
CPC分类号： G01J1/4228 , A61N1/0543 , A61N1/36046 , A61N1/37211
摘要： The present invention provides a method for capturing optical micro detectors for improved surgical handling during implantation into an eye comprising the steps of providing an optically active thin film heterostructure on a soluble substrate; forming an array comprising individual optical microdetectors from the optically active thin film heterostructure; attaching the optical microdetector array onto a biodegradable polymer carrier membrane; and separating the optical microdetector array attached to the biodegradable polymer carrier membrane from the soluble substrate thereby capturing the optical microdetectors in the bio-polymer carrier membrane for improved handling of the optical micro-detectors during transfer and implantation into the eye.

8. 发明申请

US20060210706A1 Thin film solid oxide fuel cell with lithographically patterned electrolyte and anode layers 有权
公开(公告)号：US20060210706A1
公开(公告)日：2006-09-21
申请号：US11436392
申请日：2006-05-18
申请人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
发明人： Xin Chen , Naijuan Wu , Alex Ignatiev , Yuxiang Zhou
IPC分类号： B05D5/12 , H01M4/88
CPC分类号： H01M8/124 , H01M4/8621 , H01M4/881 , H01M4/8814 , H01M4/8817 , H01M4/8867 , H01M4/8871 , H01M8/002 , H01M8/126 , H01M2300/0094 , Y02E60/525 , Y02P70/56
摘要： A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate onto which is deposited a thin anode metal layer which is then patterned to reveal an array of pores in the anode. A dense thin film electrolyte is then deposited onto the porous anode layer overcoating the anode and filling the anode pores. The substrate foil layer is then removed to allow for exposure of the porous anode/electrolyte to fuel. The cathode is then formed on the electrolyte by depositing a cathode thin film cap using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated to have an atomically ordered surface, which makes possible an atomically ordered anode and atomically ordered thin film electrolyte for improved performance.

9. 发明申请

US20050151156A1 Switchable resistive perovskite microelectronic device with multi-layer thin film structure 有权
标题翻译：具有多层薄膜结构的可切换电阻钙钛矿微电子器件
公开(公告)号：US20050151156A1
公开(公告)日：2005-07-14
申请号：US11034695
申请日：2005-01-13
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01C7/00 , H01L45/00 , H01L21/00 , H01L29/00 , H01L29/32 , H01L31/111
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

10. 发明授权

US06645656B1 Thin film solid oxide fuel cell and method for forming 有权
标题翻译：薄膜固体氧化物燃料电池及其成型方法
公开(公告)号：US06645656B1
公开(公告)日：2003-11-11
申请号：US09534385
申请日：2000-03-24
申请人： Xin Chen , Naijuan Wu , Alex Ignatiev
发明人： Xin Chen , Naijuan Wu , Alex Ignatiev
IPC分类号： H01M810
CPC分类号： H01M8/1286 , H01M8/1253 , H01M2008/1293 , Y02E60/525 , Y02P70/56
摘要： A thin film solid oxide fuel cell (TFSOFC) having a porous metallic anode and a porous cathode is provided. The fuel cell is formed by using a continuous metal foil as a substrate to epitaxially deposit a thin film electrolyte on one surface of the foil. The metal foil may then be made porous by photolithographically patterning and etching the other surface of the foil to form holes extending through the foil to the electrolyte/foil interface. The cathode is then formed on the electrolyte by depositing a second thin film using known film deposition techniques. Further processing may be used to increase the porosity of the electrodes. The metal foil may be treated before film deposition to have an atomically ordered surface, which makes possible an atomically ordered thin film electrolyte.
摘要翻译：提供具有多孔金属阳极和多孔阴极的薄膜固体氧化物燃料电池（TFSOFC）。燃料电池通过使用连续金属箔作为基板来形成，以在箔的一个表面上外延地沉积薄膜电解质。然后可以通过光刻图案化和蚀刻箔的另一表面来形成金属箔以形成延伸穿过箔到达电解质/箔界面的孔。然后通过使用已知的膜沉积技术沉积第二薄膜在阴极上形成阴极。可以使用进一步的处理来增加电极的孔隙率。金属箔可以在膜沉积之前进行处理以具有原子序列表面，这使得有可能成为原子排列的薄膜电解质。

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