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1. 发明授权

US10547076B2 Porous solid oxide fuel cell anode with nanoporous surface and process for fabrication 有权
公开(公告)号：US10547076B2
公开(公告)日：2020-01-28
申请号：US15547641
申请日：2016-01-29
申请人： University of Houston System , Rabi Ebrahim , Mukhtar Yeleuov , Alex Ignatiev
发明人： Rabi Ebrahim , Mukhtar Yeleuov , Alex Ignatiev
IPC分类号： H01M8/124 , H01M4/86 , H01M4/90
摘要： Electrochemical devices including solid oxide fuel cells (SOFCs) or thin film solid oxide fuel cells (TFSOFCs) having a porous metallic anode with nanoporous surface structure enabling the deposition of a dense, impermeable thin film electrolyte layer on the porous anode. Fabricating methods include forming a mixture of nanopowder metallic agents and nanopowder proppant that are sintered, smoothed and etched to form the nanoporous surface structure.

2. 发明申请

US20100014344A1 Switchable two terminal multi-layer perovskite thin film resistive device and methods thereof 有权
标题翻译：可切换双端子多层钙钛矿薄膜电阻器件及其方法
公开(公告)号：US20100014344A1
公开(公告)日：2010-01-21
申请号：US12586147
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

3. 发明申请

US20060063680A1 System and method for joining superconductivity tape 审中-公开
标题翻译：用于连接超导磁带的系统和方法
公开(公告)号：US20060063680A1
公开(公告)日：2006-03-23
申请号：US11039711
申请日：2005-01-19
申请人： Alex Ignatiev , Alexander Molodyk , Louis Castellani
发明人： Alex Ignatiev , Alexander Molodyk , Louis Castellani
IPC分类号： H01L39/22
CPC分类号： H01R4/68 , H01L39/02 , H01L39/2441
摘要： According to an embodiment, a portable system for joining two superconductor pieces comprises a support arranged for holding the two superconductor pieces adjacent to each other in a reaction area, a distribution head positioned to deposit at least one material onto the reaction area used in joining the two superconductor pieces, an ion gun positioned to bombard the reaction area with ions, a gas port arranged for providing at least one gas to the system, and a vacuum port arranged for establishing a desired atmospheric pressure in the system.
摘要翻译：根据实施例，用于连接两个超导体片的便携式系统包括布置成用于在反应区域中彼此相邻地保持两个超导体片的支撑件，分配头定位成将至少一种材料沉积到用于接合两个超导体部件，定位成用离子轰击反应区域的离子枪，被布置用于向系统提供至少一种气体的气体端口，以及布置成用于在系统中建立所需大气压力的真空端口。

4. 发明授权

US5914811A Birefringent grating polarizing beam splitter 失效
标题翻译：双折射光栅偏振分束器
公开(公告)号：US5914811A
公开(公告)日：1999-06-22
申请号：US706309
申请日：1996-08-30
申请人： Yansong Chen , Shangquiq Liu , Alex Ignatiev , NaiJuan Wu
发明人： Yansong Chen , Shangquiq Liu , Alex Ignatiev , NaiJuan Wu
IPC分类号： G02B5/18 , G02B5/30
CPC分类号： G02B27/285 , G02B27/4277 , G02B5/1814
摘要： A birefringence polarizing beam-splitter is provided. A series of periodic blazed grooves or grooves with echelon profile having a number of steps is provided on the surface of an optically birefringent material. The birefringent substrate material may be crystalline or plastic. In another embodiment, two substrates of birefringent material having a series of periodic blazed grooves or grooves with echelon profile are combined to achieve greater angle of beam splitting.
摘要翻译：提供双折射偏振分束器。在光学双折射材料的表面上提供一系列具有多个台阶的梯形轮廓的周期性闪耀的槽或槽。双折射衬底材料可以是结晶或塑料。在另一个实施例中，组合具有一系列具有梯形轮廓的周期性闪耀的凹槽或凹槽的双折射材料的两个基板以实现更大的分束角度。

5. 发明申请

US20100134239A1 Method of using a switchable resistive perovskite microelectronic device with multi-Layer thin film structure 有权
标题翻译：使用具有多层薄膜结构的可切换电阻钙钛矿微电子器件的方法
公开(公告)号：US20100134239A1
公开(公告)日：2010-06-03
申请号：US12586143
申请日：2009-09-17
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01C1/012
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

6. 发明授权

US07634989B2 Apparatus and method to pulverize rock using a superconducting electromagnetic linear motor 有权
标题翻译：使用超导电磁线性电机粉碎岩石的设备和方法
公开(公告)号：US07634989B2
公开(公告)日：2009-12-22
申请号：US11445916
申请日：2006-06-02
申请人： Alex Ignatiev
发明人： Alex Ignatiev
IPC分类号： F41B6/00 , F41F1/00
CPC分类号： F41B6/006 , B02C1/00
摘要： A rock pulverizer device based on a superconducting linear motor. The superconducting electromagnetic rock pulverizer accelerates a projectile via a superconducting linear motor and directs the projectile at high speed toward a rock structure that is to be pulverized by collision of the speeding projectile with the rock structure. The rock pulverizer is comprised of a trapped field superconducting secondary magnet mounted on a movable car following a track, a wire wound series of primary magnets mounted on the track, and the complete magnet/track system mounted on a vehicle used for movement of the pulverizer through a mine as well as for momentum transfer during launch of the rock breaking projectile.
摘要翻译：基于超导线性电动机的岩石粉碎机装置。超导电磁岩石粉碎机通过超导线性电机加速射弹，并将弹丸高速引导到通过超速弹丸与岩石结构碰撞而被粉碎的岩石结构。岩石粉碎机由安装在轨道上的可移动车辆上的被捕获的场超导次级磁体，安装在轨道上的绕线系列的主磁体和安装在用于粉碎机的运动的车辆上的完整的磁体/轨道系统通过矿井以及在发射岩石弹丸时的动量转移。

7. 发明授权

US07608467B2 Switchable resistive perovskite microelectronic device with multi-layer thin film structure 有权
标题翻译：具有多层薄膜结构的可切换电阻钙钛矿微电子器件
公开(公告)号：US07608467B2
公开(公告)日：2009-10-27
申请号：US11034695
申请日：2005-01-13
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： G11C13/0007 , G11C2213/31 , H01C7/006 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。添加到器件中的缓冲层的功能包括电阻切换区域的放大率，切换器件所需的脉冲电压的降低，器件受到大脉冲冲击的损害，温度的改善以及辐射性能和增加的设备的稳定性，允许多值存储器应用。

8. 发明申请

US20070277797A1 Apparatus and method to pulverize rock using a superconducting electromagnetic linear motor 有权
标题翻译：使用超导电磁线性电机粉碎岩石的设备和方法
公开(公告)号：US20070277797A1
公开(公告)日：2007-12-06
申请号：US11445916
申请日：2006-06-02
申请人： Alex Ignatiev
发明人： Alex Ignatiev
IPC分类号： F41B6/00
CPC分类号： F41B6/006 , B02C1/00
摘要： A rock pulverizer device based on a superconducting linear motor. The superconducting electromagnetic rock pulverizer accelerates a projectile via a superconducting linear motor and directs the projectile at high speed toward a rock structure that is to be pulverized by collision of the speeding projectile with the rock structure. The rock pulverizer is comprised of a trapped field superconducting secondary magnet mounted on a movable car following a track, a wire wound series of primary magnets mounted on the track, and the complete magnet/track system mounted on a vehicle used for movement of the pulverizer through a mine as well as for momentum transfer during launch of the rock breaking projectile.
摘要翻译：基于超导线性电动机的岩石粉碎机装置。超导电磁岩石粉碎机通过超导线性电机加速射弹，并将弹丸高速引导到通过超速弹丸与岩石结构碰撞而被粉碎的岩石结构。岩石粉碎机由安装在轨道上的可移动车辆上的被捕获的场超导次级磁体，安装在轨道上的绕线系列的主磁体和安装在用于粉碎机的运动的车辆上的完整的磁体/轨道系统通过矿井以及在发射岩石弹丸时的动量转移。

9. 发明授权

US06762481B2 Electrically programmable nonvolatile variable capacitor 有权
标题翻译：电可编程易失性可变电容器
公开(公告)号：US06762481B2
公开(公告)日：2004-07-13
申请号：US10267010
申请日：2002-10-08
申请人： Shangqing Liu , Naijuan Wu , Alex Ignatiev , JainRen Li
发明人： Shangqing Liu , Naijuan Wu , Alex Ignatiev , JainRen Li
IPC分类号： H01L2993
CPC分类号： H01L27/0808 , G11C11/5685 , G11C13/0007 , G11C2213/31 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A basic form of a variable capacitive apparatus and its actuating method are disclosed. The apparatus is a simple two-terminal structure and may be set by short duration, low voltage electrical pulses. Materials with perovskite structure or perovskite-related structures, especially colossal magnetoresistive materials, are the active constituents of the apparatus. The apparatus overcomes the shortcomings of its predecessors and offers the advantages of non-volatility, two or multi-level storage, non-destructive reading, free-of-power maintenance and potential high radiation hardness.
摘要翻译：公开了一种可变电容式装置的基本形式及其致动方法。该装置是一个简单的双端子结构，可以通过短时间，低电压电脉冲设置。具有钙钛矿结构或钙钛矿相关结构的材料，特别是巨大的磁阻材料是该装置的活性成分。该设备克服了其前身的缺点，提供了非挥发性，两级或多级存储，无损读取，无功维护和潜在的高辐射硬度等优点。

10. 发明授权

US08409879B2 Method of using a buffered electric pulse induced resistance device 有权
标题翻译：使用缓冲电脉冲感应电阻器件的方法
公开(公告)号：US08409879B2
公开(公告)日：2013-04-02
申请号：US13068884
申请日：2011-05-23
申请人： Naijuan Wu , Xin Chen , Alex Ignatiev
发明人： Naijuan Wu , Xin Chen , Alex Ignatiev
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01C7/006 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0092 , G11C2213/31 , G11C2213/51 , H01C17/06533 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/147
摘要： A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The selected duration of the electrical pulse is in the range of from about 8 nanosecond to about 100 milliseconds. The selected maximum value of the electrical pulse is in the range of from about 1 V to about 150 V. The electrical pulse may have square, saw-toothed, triangular, sine, oscillating or other waveforms, and may be of positive or negative polarity.
摘要翻译：可切换电阻器件具有介于上导电电极和下导电电极之间的多层薄膜结构。多层薄膜结构体包括在钙钛矿层的一侧具有一个缓冲层的钙钛矿层或在钙钛矿层的两侧具有缓冲层的钙钛矿层。在施加的电脉冲下在器件中产生可逆电阻变化。器件的电阻变化在施加电脉冲后保持不变。所选择的电脉冲持续时间在约8纳秒至约100毫秒的范围内。所选择的电脉冲的最大值在约1V至约150V的范围内。电脉冲可以具有正方形，锯齿形，三角形，正弦，振荡或其它波形，并且可以是正极性或负极性。

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