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1. 发明授权

US06473332B1 Electrically variable multi-state resistance computing 有权
标题翻译：电可变多态电阻计算
公开(公告)号：US06473332B1
公开(公告)日：2002-10-29
申请号：US09826386
申请日：2001-04-04
申请人： Alex Ignatiev , Naijuan Wu , Shangqing Liu , E. Joseph Charlson
发明人： Alex Ignatiev , Naijuan Wu , Shangqing Liu , E. Joseph Charlson
IPC分类号： G11C1100
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31
摘要： An electrically operated, overwritable, multivalued, non-volatile resistive memory element is disclosed. The memory element includes a two terminal non-volatile memory device in which a memory film material is included, and a circuit topological configuration is defined. The memory device relates generally to a unique new electrically induced variable resistance effect, which has been discovered in thin films of colossal magnetoresistive (CMR) oxide materials. The memory material is characterized by: 1) the electrical control of resistance through the application of short duration low voltage electrical pulses at room temperature and with no applied magnetic field; 2) increase of the resistance or decrease of the resistance depending on the polarity of the applied pulses; 3) a large dynamic range of electrical resistance values; and 4) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit/multivalued storage capabilities. The memory element includes a circuit topology to construct a ROM/RAM configuration. The features of the memory element circuit are: 1) the ability to set and then measure the resistance of the two terminal multi-valued memory devices with negligible effects of sampling voltage and current; and 2) the ability to step up or down the resistance value, i. e., to set one of multiple number of resistance states, with repeated applications of pulses of varying amplitude.
摘要翻译：公开了电操作的，可重写的，多值的，非易失性的电阻式存储元件。存储元件包括其中包括存储器薄膜材料的二端非易失性存储器件，并且定义了电路拓扑结构。存储器件通常涉及一种独特的新的电感可变电阻效应，其已经在巨磁阻（CMR）氧化物材料的薄膜中发现。记忆材料的特征在于：1）通过在室温下施加短时间低电压电脉冲并且没有施加磁场，对电阻进行电气控制; 2）根据施加的脉冲的极性，电阻的增加或电阻的降低; 3）动态范围大的电阻值; 以及4）响应于所选择的电输入信号在所述动态范围内被设置为多个电阻值之一的能力，以便向所述单个单元提供多位/多值存储能力。存储元件包括构成ROM / RAM配置的电路拓扑。存储元件电路的特点是：1）能够以可忽略的采样电压和电流影响设置并测量两端多值存储器件的电阻; 和2）升高或降低电阻值的能力，i。即，设置多个电阻状态之一，重复应用具有变化幅度的脉冲。

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