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1. 发明申请

US20090191475A1 Method of manufacturing photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US20090191475A1
公开(公告)日：2009-07-30
申请号：US12383640
申请日：2009-03-26
申请人： Myoung-soo Lee , Young-su Sung , Hee-bom Kim , Min-kyung Lee , Dong-gun Lee
发明人： Myoung-soo Lee , Young-su Sung , Hee-bom Kim , Min-kyung Lee , Dong-gun Lee
IPC分类号： G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/70 , G03F7/70625 , G21K2201/061
摘要： A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.
摘要翻译：制造光掩模的方法包括：提供光掩模; 曝光光掩模以获得光掩模的空间图像，并使用空中图像评估光掩模; 以及根据评估结果改变与空中图像相关联的光掩模的光学参数。

2. 发明授权

US08137870B2 Method of manufacturing photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US08137870B2
公开(公告)日：2012-03-20
申请号：US12383640
申请日：2009-03-26
申请人： Myoung-soo Lee , Young-su Sung , Hee-bom Kim , Min-kyung Lee , Dong-gun Lee
发明人： Myoung-soo Lee , Young-su Sung , Hee-bom Kim , Min-kyung Lee , Dong-gun Lee
IPC分类号： G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , G03F1/70 , G03F7/70625 , G21K2201/061
摘要： A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.
摘要翻译：制造光掩模的方法包括：提供光掩模; 曝光光掩模以获得光掩模的空间图像，并使用空中图像评估光掩模; 以及根据评估结果改变与空中图像相关联的光掩模的光学参数。

3. 发明授权

US08522172B2 Method of forming photomask using calibration pattern, and photomask having calibration pattern 有权
标题翻译：使用校准图案形成光掩模的方法，以及具有校准图案的光掩模
公开(公告)号：US08522172B2
公开(公告)日：2013-08-27
申请号：US13240732
申请日：2011-09-22
申请人： Young-keun Yoon , Hee-bom Kim , Myoung-soo Lee , Chan-uk Jeon , Hak-seung Han
发明人： Young-keun Yoon , Hee-bom Kim , Myoung-soo Lee , Chan-uk Jeon , Hak-seung Han
IPC分类号： G06F17/50
CPC分类号： G03F1/70
摘要： A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.
摘要翻译：使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。该方法包括提供一维校准设计图案，每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案，并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量，并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为相应的第一测量度量。

4. 发明申请

US20120159405A1 METHOD OF FORMING PHOTOMASK USING CALIBRATION PATTERN, AND PHOTOMASK HAVING CALIBRATION PATTERN 有权
标题翻译：使用校准图形成光电子的方法和具有校准图案的光电子
公开(公告)号：US20120159405A1
公开(公告)日：2012-06-21
申请号：US13240732
申请日：2011-09-22
申请人： Young-keun YOON , Hee-bom Kim , Myoung-soo Lee , Chan-uk Jeon , Hak-seung Han
发明人： Young-keun YOON , Hee-bom Kim , Myoung-soo Lee , Chan-uk Jeon , Hak-seung Han
IPC分类号： G06F17/50
CPC分类号： G03F1/70
摘要： A method of forming a photomask using a calibration pattern that may exactly transfer a desired pattern to a substrate. The method includes providing one-dimensional calibration design patterns each having first design measures and providing two-dimensional calibration design patterns each having second design measures; obtaining one-dimensional calibration measured patterns using the one-dimensional calibration design patterns and obtaining two-dimensional calibration measured patterns using the two-dimensional calibration design patterns; obtaining first measured measures of the one-dimensional calibration measured patterns and obtaining second measured measures of the two-dimensional calibration measured patterns; establishing a correlation between the first measured measures and the second measured measures; and converting a main measured measure of a main pattern into a corresponding one of the first measured measures using the correlation.
摘要翻译：使用可以将期望图案精确地转印到基板的校准图案形成光掩模的方法。该方法包括提供一维校准设计图案，每个具有第一设计措施并提供每个具有第二设计措施的二维校准设计图案; 使用一维校准设计图案获得一维校准测量图案，并使用二维校准设计图案获得二维校准测量图案; 获得一维校准测量图案的第一测量度量，并获得二维校准测量图案的第二测量度量; 建立第一测量措施与第二测量措施之间的相关性; 以及使用所述相关性将主模式的主测量度量转换为相应的第一测量度量。

5. 发明授权

US07601467B2 Method of manufacturing EUVL alternating phase-shift mask 有权
标题翻译：制造EUVL交替相移掩模的方法
公开(公告)号：US07601467B2
公开(公告)日：2009-10-13
申请号：US11367438
申请日：2006-03-06
申请人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
发明人： Sung-min Huh , Hee-bom Kim , Seong-woon Choi , Dong-wan Kim , Chan-uk Jeon
IPC分类号： G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/30
摘要： A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.
摘要翻译：制造极紫外光刻（EUVL）交替相移掩模的方法包括制备具有反射层的基板，在反射层上形成遮光层图案以覆盖反射层的一部分，同时留下反射区域的反射层，通过蚀刻反射层在反射层的相移区域中形成沟槽，并且改变反射区域的非相移区域的物理结构，以降低其相对于极端的超反射区域的反射率（EUV）灯。

6. 发明申请

US20120058432A1 METHODS OF FORMING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHIC SHOT GROUPING 有权
标题翻译：使用光刻机分组形成半导体器件的方法
公开(公告)号：US20120058432A1
公开(公告)日：2012-03-08
申请号：US13219579
申请日：2011-08-26
申请人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
发明人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
IPC分类号： G03F7/20
CPC分类号： G03F1/38 , G03F1/70 , G03F1/76
摘要： A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
摘要翻译：形成半导体器件的方法可以包括基于用于形成掩模的最终图案来确定包括多个镜头的镜头组。包括在多个镜头中的拍摄可以被分类为处于第一传球镜头或第二镜头组中的每一个，其中每个镜头可以包括多个非直接相邻镜头。可以执行第一遍曝光以辐射掩模版以提供第一遍照射设置，并且可以执行第二曝光曝光以辐射掩模版以提供第二遍照射设置。

7. 发明申请

US20070224523A1 Reflective photomask, method of fabricating the same, and reflective blank photomask 有权
标题翻译：反射光掩模，其制造方法和反射性空白光掩模
公开(公告)号：US20070224523A1
公开(公告)日：2007-09-27
申请号：US11723472
申请日：2007-03-20
申请人： Sung-min Huh , Hee-bom Kim
发明人： Sung-min Huh , Hee-bom Kim
IPC分类号： B32B9/00 , B32B17/06 , B32B17/10 , G03F1/00 , G21K5/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G21K1/062 , G21K2201/061 , Y10T428/31616
摘要： The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.
摘要翻译：反射光掩模可以包括衬底，形成在衬底上的反射层，形成在反射层上并在衬底的第一部分上方的吸收图案。补偿部分可以形成在衬底的至少第二部分上。第二部分与第一部分相邻，并且补偿部分比吸收图案薄。

8. 发明授权

US07754398B2 Photo mask having assist pattern and method of fabricating the same 失效
标题翻译：具有辅助图案的光罩及其制造方法
公开(公告)号：US07754398B2
公开(公告)日：2010-07-13
申请号：US11821762
申请日：2007-06-25
申请人： Hee-bom Kim , Jeung-woo Lee , Sung-min Huh
发明人： Hee-bom Kim , Jeung-woo Lee , Sung-min Huh
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/28 , G03F1/36 , G03F1/46
摘要： A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.
摘要翻译：光掩模具有高度可靠的辅助图案，并且提供了其制造方法。光掩模包括透明基板，电路图案和辅助图案。相对于其表面凹入透明基板的电路图案具有第一厚度，并且邻近于电路图案并且与电路图案间隔开的辅助图案相对于其表面凹入到透明基板中，同时具有较小的第二厚度比第一厚度。

9. 发明授权

US07642017B2 Reflective photomask, method of fabricating the same, and reflective blank photomask 有权
标题翻译：反射光掩模，其制造方法和反射性空白光掩模
公开(公告)号：US07642017B2
公开(公告)日：2010-01-05
申请号：US11723472
申请日：2007-03-20
申请人： Sung-min Huh , Hee-bom Kim
发明人： Sung-min Huh , Hee-bom Kim
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G21K1/062 , G21K2201/061 , Y10T428/31616
摘要： The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.
摘要翻译：反射光掩模可以包括衬底，形成在衬底上的反射层，形成在反射层上并在衬底的第一部分上方的吸收图案。补偿部分可以形成在衬底的至少第二部分上。第二部分与第一部分相邻，并且补偿部分比吸收图案薄。

10. 发明申请

US20070231715A1 Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method 失效
标题翻译：使用分离曝光技术的光掩模，光掩模的制造方法以及使用该方法制造光掩模的装置
公开(公告)号：US20070231715A1
公开(公告)日：2007-10-04
申请号：US11730454
申请日：2007-04-02
申请人： Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
发明人： Hak-seung Han , Seong-woon Choi , Byung-gook Kim , Hee-bom Kim , Sung-ho Park
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/68 , G03F1/36 , G03F1/76
摘要： A method of fabricating a photomask may include forming a light-shielding layer and a first resist film on a substrate, forming a first resist pattern by exposing first exposed regions of the first resist film to a first exposure source that may have a first energy, forming a first, light shielding pattern by etching the selectively exposed light-shielding layer by using the first resist pattern as an etching mask, removing the first resist pattern, forming a second resist film on the first light-shielding layer, exposing second exposed regions of the second resist film that may have a desired pattern shape to a second exposure source that may have a second energy, forming a second light shielding pattern by etching the selectively exposed first light shielding pattern by using the second resist pattern as an etching mask, and removing the second resist pattern.
摘要翻译：制造光掩模的方法可以包括在基板上形成遮光层和第一抗蚀剂膜，通过将第一抗蚀剂膜的第一曝光区域暴露于可能具有第一能量的第一曝光源形成第一抗蚀剂图案，通过使用第一抗蚀剂图案作为蚀刻掩模蚀刻选择性地暴露的遮光层来形成第一遮光图案，去除第一抗蚀剂图案，在第一遮光层上形成第二抗蚀剂膜，暴露第二曝光区域可以具有期望的图案形状的第二抗蚀剂膜可以具有可以具有第二能量的第二曝光源，通过使用第二抗蚀剂图案作为蚀刻掩模来蚀刻选择性地暴露的第一遮光图案来形成第二遮光图案，并移除第二抗蚀剂图案。

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