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1. 发明授权

US08749476B2 Electrophoretic display device 有权
标题翻译：电泳显示装置
公开(公告)号：US08749476B2
公开(公告)日：2014-06-10
申请号：US11140850
申请日：2005-05-31
申请人： Nam-Seok Roh , Mun-Pyo Hong
发明人： Nam-Seok Roh , Mun-Pyo Hong
IPC分类号： G09G3/34 , G06F3/042
CPC分类号： G02F1/167 , G09G3/344 , G09G2300/0809 , G09G2360/14
摘要： A electrophoretic display device is provided, which includes: a thin film transistor array panel including a substrate, gate and data lines formed on the substrate and crossing each other, switching thin film transistors electrically connected to the gate and data lines, a photo sensor formed on the substrate, and pixel electrodes electrically connected to the switching thin film transistors; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a display layer disposed between the thin film transistor array panel and the common electrode panel. The display layer includes micro capsules containing negative and positive pigment particles.
摘要翻译：提供了一种电泳显示装置，其包括：薄膜晶体管阵列面板，包括形成在基板上并彼此交叉的基板，栅极和数据线，开关电连接到栅极和数据线的薄膜晶体管，形成的光电传感器和与开关薄膜晶体管电连接的像素电极; 面对薄膜晶体管阵列面板并具有公共电极的公共电极面板; 以及设置在薄膜晶体管阵列面板和公共电极面板之间的显示层。显示层包括含有负性和正性颜料颗粒的微胶囊。

2. 发明授权

US08258004B2 Display device and manufacturing method thereof 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US08258004B2
公开(公告)日：2012-09-04
申请号：US12561218
申请日：2009-09-16
申请人： Joon-hak Oh , Mun-pyo Hong , Bo-sung Kim , Yong-uk Lee
发明人： Joon-hak Oh , Mun-pyo Hong , Bo-sung Kim , Yong-uk Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/0545 , B82Y30/00 , H01L27/3244 , H01L51/0005 , H01L51/0016 , H01L51/0558
摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.
摘要翻译：根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层，在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

3. 发明授权

US08107586B2 Shift register and display device including the same 有权
标题翻译：移位寄存器和显示设备包括相同
公开(公告)号：US08107586B2
公开(公告)日：2012-01-31
申请号：US11078985
申请日：2005-03-11
申请人： Kyong-Ju Shin , Chong-Chul Chae , Mun-Pyo Hong , Cheol-Woo Park , Nam-Seok Roh
发明人： Kyong-Ju Shin , Chong-Chul Chae , Mun-Pyo Hong , Cheol-Woo Park , Nam-Seok Roh
IPC分类号： G11C19/00
CPC分类号： G09G3/3677 , G09G2310/0281 , G09G2310/0286 , G09G2320/0223 , G09G2320/041 , G09G2330/021 , G11C19/28
摘要： A shift register comprises stages connected to each other, in which each stage generates an output signal in response to any one of clock signals and an output from each of two different stages. Each clock signal has a duty ratio of less than 50% and a different phase from each of the other clock signals. A display device includes pixels, signal lines, and first and second shift registers each having stages connected to each other and generating output signals to signal lines. Each stage includes a set terminal, a reset terminal, a clock terminal, and first and second output terminals.
摘要翻译：移位寄存器包括彼此连接的级，其中每一级根据时钟信号中的任何一个和两个不同级中的每一个的输出产生输出信号。每个时钟信号具有小于50％的占空比和与每个其它时钟信号不同的相位。显示装置包括像素，信号线，以及第一和第二移位寄存器，每个移位寄存器各自具有彼此连接的级并且向信号线产生输出信号。每个级包括设置终端，复位终端，时钟终端以及第一和第二输出端。

4. 发明授权

US08040474B2 Mold and method of manufacturing display device 有权
标题翻译：模具和制造显示装置的方法
公开(公告)号：US08040474B2
公开(公告)日：2011-10-18
申请号：US11704015
申请日：2007-02-07
申请人： Nam-seok Roh , Mun-pyo Hong , Jae-hyuk Chang , Jung-mok Bae
发明人： Nam-seok Roh , Mun-pyo Hong , Jae-hyuk Chang , Jung-mok Bae
IPC分类号： G02F1/1335 , H01L21/00
CPC分类号： G02F1/133504 , G02F1/133555 , G02F2001/133565 , G02F2201/123
摘要： A mold for a display device, comprising a supporting frame; at least one pattern forming part provided on a surface of the supporting frame; and a protrusion projecting from the supporting frame and disposed along the circumference of the pattern forming part, an inside wall of the protrusion toward the pattern forming part standing upright from the surface of the supporting frame.
摘要翻译：一种用于显示装置的模具，包括支撑框架; 设置在所述支撑框架的表面上的至少一个图案形成部; 以及从所述支撑框架突出并沿着所述图案形成部的圆周设置的突起，所述突起的内壁朝向从所述支撑框架的表面竖立的图案形成部。

5. 发明申请

US20110014736A1 ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US20110014736A1
公开(公告)日：2011-01-20
申请号：US12889613
申请日：2010-09-24
申请人： Bo-Sung KIM , Mun-Pyo HONG , Woo-Jae LEE
发明人： Bo-Sung KIM , Mun-Pyo HONG , Woo-Jae LEE
IPC分类号： H01L51/56
CPC分类号： H01L51/428 , H01L27/307 , H01L27/3244 , H01L51/0545 , H01L51/56 , Y02E10/549 , Y02P70/521
摘要： An organic thin film transistor (“TFT”) array panel includes a substrate, a gate line extending in a first direction, a data line extending in a second direction, intersecting with and insulated from the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, a pixel electrode connected to the drain electrode, and an organic semiconductor connected to the source electrode and the drain electrode, the organic semiconductor made of an organic material with photosensitivity.
摘要翻译：有机薄膜晶体管（“TFT”）阵列面板包括基板，沿第一方向延伸的栅极线，与第二方向延伸并与栅极线绝缘的绝缘的数据线，连接到数据的源电极线路，面对源电极的漏电极，连接到漏电极的像素电极和连接到源电极和漏电极的有机半导体，由具有感光性的有机材料制成的有机半导体。

6. 发明授权

US07863086B2 Thin film transistor substrate and method for fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07863086B2
公开(公告)日：2011-01-04
申请号：US12553780
申请日：2009-09-03
申请人： Bo-sung Kim , Soo-jin Kim , Young-min Kim , Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh
发明人： Bo-sung Kim , Soo-jin Kim , Young-min Kim , Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh
IPC分类号： H01L51/40
CPC分类号： H01L51/0533 , H01L51/107
摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域，形成在沟道区域中的有机半导体层。还提供了一种用于形成TFT基板的方法。因此，本发明提供了TFT的特性提高的TFT基板。

7. 发明授权

US07842538B2 Organic thin film transistor array and manufacturing method thereof 有权
标题翻译：有机薄膜晶体管阵列及其制造方法
公开(公告)号：US07842538B2
公开(公告)日：2010-11-30
申请号：US12015297
申请日：2008-01-16
申请人： Yong-Uk Lee , Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
发明人： Yong-Uk Lee , Bo-Sung Kim , Min-Seong Ryu , Mun-Pyo Hong
IPC分类号： H01L51/40
CPC分类号： H01L27/283 , H01L27/3272 , H01L27/3274 , H01L51/0036 , H01L51/0053 , H01L51/0055 , H01L51/0068 , H01L51/0078 , H01L51/0545
摘要： An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.
摘要翻译：提供有机薄膜晶体管阵列面板，其包括：基板; 数据线，形成在所述基板上并且包括源电极; 漏极，形成在基板上并与数据线分离; 设置在源电极和漏电极上的有机半导体; 形成在有机半导体上的栅极绝缘体; 栅极线，包括设置在栅极绝缘体上的栅电极; 钝化层，形成在所述栅极线上，并且在所述漏极上具有第一接触孔; 通过所述第一接触孔与所述漏电极连接的像素电极; 以及设置在所述有机半导体下方的不透明遮光构件。

8. 发明授权

US07638800B2 Wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same 失效
标题翻译：用于显示装置的线，其制造方法，包括该线的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07638800B2
公开(公告)日：2009-12-29
申请号：US10501597
申请日：2002-07-29
申请人： Seung-Hee Yu , Mun-Pyo Hong , Soo-Guy Rho , Nam-Seok Rho , Keun-Kyu Song , Hee-Hwan Choe , Bo-Sung Kim , Sang-Gab Kim , Sung-Chul Kang , Hong-Sick Park
发明人： Seung-Hee Yu , Mun-Pyo Hong , Soo-Guy Rho , Nam-Seok Rho , Keun-Kyu Song , Hee-Hwan Choe , Bo-Sung Kim , Sang-Gab Kim , Sung-Chul Kang , Hong-Sick Park
IPC分类号： H01L21/84
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ratio of the pixel and high contrast ratio.
摘要翻译：首先，使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂沉积和图案化Cr膜和CrOx膜，以形成包括多个栅极线，多个栅电极和多个栅极焊盘。接下来，依次形成栅极绝缘膜，半导体层和欧姆接触层。依次沉积Cr膜和CrOx膜，并使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂进行图案化以形成包括多个数据的数据线线，多个源电极，多个漏电极和多个数据焊盘。钝化层被沉积并图案化以形成分别暴露漏电极，栅极焊盘和数据焊盘的多个接触孔。沉积透明导电材料或反射导电材料以形成多个像素电极，分别与漏电极，栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘。栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜，并且不增加黑色亮度。因此，不需要在滤色器面板上设置单独的黑矩阵，从而确保像素的开口率和高对比度。

9. 发明授权

US07638358B2 Display device and manufacturing method thereof 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US07638358B2
公开(公告)日：2009-12-29
申请号：US11601086
申请日：2006-11-17
申请人： Joon-hak Oh , Mun-pyo Hong , Bo-sung Kim , Yong-uk Lee
发明人： Joon-hak Oh , Mun-pyo Hong , Bo-sung Kim , Yong-uk Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/0545 , B82Y30/00 , H01L27/3244 , H01L51/0005 , H01L51/0016 , H01L51/0558
摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.
摘要翻译：根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层，在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

10. 发明申请

US20090317942A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20090317942A1
公开(公告)日：2009-12-24
申请号：US12553780
申请日：2009-09-03
申请人： Bo-sung KIM , Soo-jin KIM , Young-min KIM , Keun-kyu SONG , Yong-uk LEE , Mun-pyo HONG , Tae-young CHOI , Joon-hak OH
发明人： Bo-sung KIM , Soo-jin KIM , Young-min KIM , Keun-kyu SONG , Yong-uk LEE , Mun-pyo HONG , Tae-young CHOI , Joon-hak OH
IPC分类号： H01L51/40 , H01L21/336
CPC分类号： H01L51/0533 , H01L51/107
摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域，形成在沟道区域中的有机半导体层。还提供了一种用于形成TFT基板的方法。因此，本发明提供了TFT的特性提高的TFT基板。

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