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1. 发明专利

JP2015024809A 船舶航行用解氷装置有权
标题翻译：用于船舶导航的检测装置
公开(公告)号：JP2015024809A
公开(公告)日：2015-02-05
申请号：JP2014132765
申请日：2014-06-27
申请人：秀珍金 , Soo-Jin Kim , 秀珍金 , 秀貞金 , Soo-Jung Kim , 秀貞金
发明人： KIM SOO-JIN , KIM SOO-JUNG
IPC分类号： B63B35/12 , B63J2/12
CPC分类号： B63B35/12 , F01K13/00 , F01K15/04
摘要：【課題】航行する船舶に簡単に取り付けるだけで氷の除去を低コストかつ高効率に行える船舶航行用解氷装置を提供する。【解決手段】船舶航行用解氷装置100は、熱媒体を加熱するためのボイラ150と、加熱された熱媒体を圧送するように形成された高温ポンプ160と、高温ポンプ160により移送された熱媒体により加熱されるように構成され、船舶Sの船首に装着できるように形成されたヒーティングカバーユニット110と、ヒーティングカバーユニット110の前方に配置され、熱媒体により加熱された空気を噴射するように構成された熱気ジェットユニット120とを含む。【選択図】図2
摘要翻译：要解决的问题：提供一种容易附着在导航船舶上的用于船舶导航的除冰装置，从而以低成本有效地除冰。解决方案：用于船舶导航的除冰装置100包括：用于加热热介质的锅炉150; 高温泵160，其形成为泵送加热的热介质; 加热盖单元110，其被形成为被被高温泵160传送的热介质加热并附接到船S的弓; 以及设置在加热盖单元110的前侧并形成为喷射由热介质加热的空气的热空气喷射单元120。

2. 发明授权

US08808927B2 Nonaqueous electrolyte lithium secondary battery 有权
标题翻译：非水电解质锂二次电池
公开(公告)号：US08808927B2
公开(公告)日：2014-08-19
申请号：US12740491
申请日：2010-04-29
申请人： Jong-Ho Jeon , Soo-Jin Kim , Ho-Chun Lee
发明人： Jong-Ho Jeon , Soo-Jin Kim , Ho-Chun Lee
IPC分类号： H01M6/16 , H01M6/04 , C01G53/00 , H01M10/0525 , H01M4/36 , H01M10/0567 , C07D317/14 , C07D317/36 , C01G51/00 , H01M4/525 , C01G45/12 , H01M10/0569 , H01M10/42
CPC分类号： C07D317/14 , C01G45/1228 , C01G51/42 , C01G51/50 , C01G53/50 , C01G53/52 , C01P2006/40 , C07D317/36 , H01M4/364 , H01M4/525 , H01M10/0525 , H01M10/0567 , H01M10/0569 , H01M10/4235 , H01M2300/0037 , H01M2300/004 , H01M2300/0042 , Y02E60/122
摘要： A lithium secondary battery comprises an anode capable of intercalating or disintercalating lithium ions, a cathode configured with a lithium-containing oxide, and a nonaqueous electrolyte solution. The lithium-containing oxide comprises a lithium nickel based oxide. The nonaqueous electrolyte solution comprises vinyl ethylene carbonate (VEC) and a mono-nitrile compound. This lithium secondary battery solves the deterioration of charge/discharge cycle characteristics caused by a lithium nickel based oxide used for a cathode, and also controls the decomposition reaction of electrolyte to solve the swelling phenomenon even though the battery is stored at a high temperature or charged/discharged in a fully-charged state, thereby improving high-temperature life characteristics.
摘要翻译：锂二次电池包括能够插入或脱嵌锂离子的阳极，由含锂氧化物构成的阴极和非水电解质溶液。含锂氧化物包含锂镍氧化物。非水电解质溶液包括乙烯基碳酸亚乙酯（VEC）和单腈化合物。这种锂二次电池解决了用于阴极的锂镍基氧化物引起的充放电循环特性的恶化，并且还控制电解质的分解反应以解决膨胀现象，即使电池在高温或充电下储存 /以完全充电状态放电，从而提高高温寿命特性。

3. 发明申请

US20120009842A1 DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME AND MASK FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置，制造它们的方法和用于制造它们的掩模
公开(公告)号：US20120009842A1
公开(公告)日：2012-01-12
申请号：US13239759
申请日：2011-09-22
申请人： Chong-Chul Chai , Shi-Yul Kim , Sang-Gab Kim , Jun-Hyung Souk , Sang-Woo Whangbo , Won-Kie Chang , Hi-Kuk Lee , Soo-Wan Yoon , Soo-Jin Kim
发明人： Chong-Chul Chai , Shi-Yul Kim , Sang-Gab Kim , Jun-Hyung Souk , Sang-Woo Whangbo , Won-Kie Chang , Hi-Kuk Lee , Soo-Wan Yoon , Soo-Jin Kim
IPC分类号： H01J9/00 , G03F1/00
CPC分类号： G02F1/136213 , G02F1/13458 , G02F2001/136236 , H01L2924/0002 , H01L2924/00
摘要： A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.
摘要翻译：提供面罩。面罩包括面罩主体，第一曝光部和第二曝光部。第一曝光部分在面罩主体上。第一曝光部分包括第一透光部分和第二透光部分。第一光透射部分将与输出端子相对应的光致抗蚀剂膜的一部分暴露于第一光量的光。第二透光部分使邻近输出端子的光致抗蚀剂膜的相邻部分暴露于小于第一光量的第二光量的光。第二曝光部位在面罩主体上。第二曝光部分包括用于将对应于存储电极的光致抗蚀剂膜部分地曝光到处于第一和第二光量之间的第三光量的光的第三透光部分。

4. 发明授权

US08014773B2 Mixed mobile communication system of asynchronous communication network and synchronous communication network having handover function of mobile communication terminal, and handover method in the same 有权
标题翻译：具有移动通信终端切换功能的异步通信网络和同步通信网络的混合移动通信系统，以及切换方法相同
公开(公告)号：US08014773B2
公开(公告)日：2011-09-06
申请号：US11911995
申请日：2005-04-19
申请人： Jae Young Ju , Sang-Yun Lee , Hee-Hyeok Hahm , Soo Jin Kim , Bum-Soo Shin , Kyeong-Hee Han , Young-Ho Ju , Hyun Ki Hong , Young Ahn Ryu
发明人： Jae Young Ju , Sang-Yun Lee , Hee-Hyeok Hahm , Soo Jin Kim , Bum-Soo Shin , Kyeong-Hee Han , Young-Ho Ju , Hyun Ki Hong , Young Ahn Ryu
IPC分类号： H04W4/00 , H04J3/16 , H04J3/00
CPC分类号： H04W36/0066 , H04W8/12
摘要： In the mobile communication system, asynchronous and synchronous Mobile Switching Centers (MSCs) are interconnected via an Interworking Interoperability Function (IIF), and are connected to a Dual stack Home Location Register (D-HLR). The D-HLR stores and manages asynchronous subscription and synchronous subscription information of the mobile communication terminal. The IIF stores and manages the synchronous mobile communication system information, receives the synchronous subscription information of the mobile communication terminal from the D-HLR, transmits synchronous system information and the synchronous subscription information of the mobile communication terminal to the synchronous MSC and receives a response from the synchronous MSC, and requests the asynchronous MSC to release a wireless connection when the mobile communication terminal and the synchronous mobile communication system are interconnected and notification of completion of the handover is provided.
摘要翻译：在移动通信系统中，异步和同步移动交换中心（MSC）通过互通互操作性功能（IIF）互连，并连接到双栈归属位置寄存器（D-HLR）。 D-HLR存储和管理移动通信终端的异步订阅和同步订阅信息。 IIF存储和管理同步移动通信系统信息，从D-HLR接收移动通信终端的同步订阅信息，向同步MSC发送同步系统信息和移动通信终端的同步订阅信息，并接收响应并且当移动通信终端和同步移动通信系统互连并且提供切换完成的通知时，请求异步MSC释放无线连接。

5. 发明授权

US07982727B2 Display apparatus 有权
标题翻译：显示装置
公开(公告)号：US07982727B2
公开(公告)日：2011-07-19
申请号：US11102175
申请日：2005-04-08
申请人： Dong-Hwan Lee , Dong-Ho Lee , Soo-Jin Kim
发明人： Dong-Hwan Lee , Dong-Ho Lee , Soo-Jin Kim
IPC分类号： G09G5/00
CPC分类号： G02F1/13452 , G02F2001/13456
摘要： In a display apparatus, a printed circuit board has a base substrate, a flip chip, and an adhesive member. The flip chip is mounted onto a first face of the base substrate by the adhesive member between the flip chip and the first face of the base substrate. The first display panel is disposed on a second face opposite to the first face of the base substrate, and a second display panel is mounted on the first face of the base substrate with the flip chip. Thus, a chip mounted on the printed circuit board is made smaller and the freed up space can be used to mount the second display panel.
摘要翻译：在显示装置中，印刷电路板具有基底基板，倒装芯片和粘合部件。倒装芯片通过位于倒装芯片和基底基板的第一面之间的粘合部件安装在基底基板的第一面上。第一显示面板设置在与基底基板的第一面相反的第二面上，第二显示面板通过倒装芯片安装在基底基板的第一面上。因此，安装在印刷电路板上的芯片更小，并且可以使用释放的空间来安装第二显示面板。

6. 发明授权

US07863086B2 Thin film transistor substrate and method for fabricating the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US07863086B2
公开(公告)日：2011-01-04
申请号：US12553780
申请日：2009-09-03
申请人： Bo-sung Kim , Soo-jin Kim , Young-min Kim , Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh
发明人： Bo-sung Kim , Soo-jin Kim , Young-min Kim , Keun-kyu Song , Yong-uk Lee , Mun-pyo Hong , Tae-young Choi , Joon-hak Oh
IPC分类号： H01L51/40
CPC分类号： H01L51/0533 , H01L51/107
摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域，形成在沟道区域中的有机半导体层。还提供了一种用于形成TFT基板的方法。因此，本发明提供了TFT的特性提高的TFT基板。

7. 发明授权

US07704851B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07704851B2
公开(公告)日：2010-04-27
申请号：US11616018
申请日：2006-12-26
申请人： Soo Jin Kim
发明人： Soo Jin Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/823475 , H01L21/7682 , H01L27/115 , H01L27/11521
摘要： A method of manufacturing a semiconductor device includes providing a semiconductor substrate with gate structures. A sacrificial insulating layer is formed between the gate structures at a height lower than that of the gate structures such that a portion of each gate structure is exposed above the sacrificial insulating layer. Spacers are formed on sidewalls of the exposed portions of the gate structures. A portion of the sacrificial insulating layer between the spacers is exposed. The sacrificial insulating layer is removed, thereby forming spaces below the spacers. An insulating layer is formed to fill the spaces between the spacers such that air pockets are formed between the gate structures and below the spacers.
摘要翻译：制造半导体器件的方法包括：提供具有栅极结构的半导体衬底。在栅极结构之间形成牺牲绝缘层，其高度低于栅极结构的高度，使得每个栅极结构的一部分暴露在牺牲绝缘层的上方。隔板形成在栅极结构的暴露部分的侧壁上。间隔物之间的牺牲绝缘层的一部分被暴露。去除牺牲绝缘层，从而在间隔物之下形成空间。形成绝缘层以填充间隔件之间的空间，使得在栅极结构之间和间隔物下方形成气穴。

8. 发明授权

US07700472B2 Method of forming a gate of a semiconductor device 有权
标题翻译：形成半导体器件的栅极的方法
公开(公告)号：US07700472B2
公开(公告)日：2010-04-20
申请号：US11761281
申请日：2007-06-11
申请人： Soo Jin Kim
发明人： Soo Jin Kim
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28247 , H01L21/28273 , H01L27/11521
摘要： A method of forming a gate of a semiconductor device includes providing a semiconductor substrate over which a first conductive layer, a dielectric layer and a second conductive layer are formed. The second conductive layer is patterned to expose a part of the dielectric layer. A first protection layer is formed on sidewalls of the second conductive layer. A first etch process is performed to remove the exposed dielectric layer and to expose a part of the first conductive layer. A second protection layer is formed on sidewalls of the second conductive layer. A second etch process is performed to remove the exposed first conductive layer.
摘要翻译：形成半导体器件的栅极的方法包括提供半导体衬底，在其上形成第一导电层，电介质层和第二导电层。图案化第二导电层以暴露电介质层的一部分。第一保护层形成在第二导电层的侧壁上。执行第一蚀刻工艺以去除暴露的介电层并暴露第一导电层的一部分。第二保护层形成在第二导电层的侧壁上。执行第二蚀刻工艺以去除暴露的第一导电层。

9. 发明申请

US20090317942A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20090317942A1
公开(公告)日：2009-12-24
申请号：US12553780
申请日：2009-09-03
申请人： Bo-sung KIM , Soo-jin KIM , Young-min KIM , Keun-kyu SONG , Yong-uk LEE , Mun-pyo HONG , Tae-young CHOI , Joon-hak OH
发明人： Bo-sung KIM , Soo-jin KIM , Young-min KIM , Keun-kyu SONG , Yong-uk LEE , Mun-pyo HONG , Tae-young CHOI , Joon-hak OH
IPC分类号： H01L51/40 , H01L21/336
CPC分类号： H01L51/0533 , H01L51/107
摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
摘要翻译：薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域，形成在沟道区域中的有机半导体层。还提供了一种用于形成TFT基板的方法。因此，本发明提供了TFT的特性提高的TFT基板。

10. 发明申请

US20090275575A1 BENZOPHENONE DERIVATIVES USEFUL FOR INHIBITING FORMATION OF MICROTUBULE 有权
标题翻译：用于抑制MICROTUBULE形成的苯并噻吩衍生物
公开(公告)号：US20090275575A1
公开(公告)日：2009-11-05
申请号：US12441601
申请日：2007-09-21
申请人： Nam-Song Choi , Young-Mi Kim , Young-Hoon Kim , Jae-Kwang Lee , In-Taek Lim , Ho-Jin Choi , Hyun-Mo Yang , Seung-Kee Moon , Soo-Jin Kim , Hyun-Jung Yu , Jae-Su Shin , Young-Min Kwon , Sung-Sook Lee , Soon-Kil Ahn
发明人： Nam-Song Choi , Young-Mi Kim , Young-Hoon Kim , Jae-Kwang Lee , In-Taek Lim , Ho-Jin Choi , Hyun-Mo Yang , Seung-Kee Moon , Soo-Jin Kim , Hyun-Jung Yu , Jae-Su Shin , Young-Min Kwon , Sung-Sook Lee , Soon-Kil Ahn
IPC分类号： A61K31/5377 , C07D213/50 , A61K31/4406 , A61K31/12 , C07C49/255 , C07D413/10 , A61P35/00
CPC分类号： C07D207/333 , C07C49/84 , C07D207/335 , C07D213/50 , C07D213/64 , C07D231/12 , C07D233/54 , C07D233/64 , C07D239/26 , C07D249/08 , C07D261/08 , C07D263/32 , C07D277/24 , C07D277/28 , C07D277/30 , C07D277/40 , C07D307/46 , C07D307/52 , C07D333/20 , C07D333/22 , C07D401/10 , C07D403/10 , C07D405/10 , C07D405/12 , C07D407/10 , C07D409/10 , C07D413/10 , C07D417/04 , C07D417/10
摘要： Disclosed herein are novel benzophenone derivatives represented by formula I, a pharmaceutically acceptable salt thereof, a hydrate thereof or a solvate thereof, a pharmacological composition containing the same, and a use of the composition as therapeutic drugs. The benzophenone derivatives have an inhibition activity of microtubule formation and can be used to treat a normal proliferative state of a malignant tumor by killing the actively proliferating cells.
摘要翻译：本文公开了由式I表示的新型二苯甲酮衍生物，其药学上可接受的盐，其水合物或其溶剂合物，含有该二苯甲酮衍生物的药理学组合物，以及该组合物作为治疗药物的用途。二苯甲酮衍生物具有微管形成的抑制活性，可用于通过杀死活性增殖细胞来治疗恶性肿瘤的正常增殖状态。

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