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1. 发明授权

US06310424B1 Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US06310424B1
公开(公告)日：2001-10-30
申请号：US09533667
申请日：2000-03-23
申请人： Morio Ogura , Naoki Tanaka
发明人： Morio Ogura , Naoki Tanaka
IPC分类号： H01L4104
CPC分类号： H03H9/02559
摘要： An SAW device including a glass substrate, an LiNbO3 (LT) substrate, and an electrode. When a pitch of the electrode is &lgr;, a thickness of the LT substrate is H, and K equals to 2&pgr;/&lgr;, a product of K and H is at least 0.5 and at most 1.5. Accordingly, a SAW device which can advantageously reduced in size by a reduction in propagation velocity and which is provided with high K2 and an enhanced temperature characteristic as having a good temperature characteristic of the LT substrate.
摘要翻译：包括玻璃基板，LiNbO 3（LT）基板和电极的SAW器件。当电极的间距为羔羊时，LT底物的厚度为H，K等于2pi / lambd，K和H的乘积为至少0.5和至多1.5。因此，可以通过降低传播速度而有利地减小尺寸的SAW器件，并且具有高的K2和增强的温度特性，这是具有LT衬底的良好温度特性的SAW器件。

2. 发明申请

US20050179340A1 Surface acoustic wave device and surface acoustic wave filter comprising the device 审中-公开
标题翻译：包括该装置的表面声波装置和声表面波滤波器
公开(公告)号：US20050179340A1
公开(公告)日：2005-08-18
申请号：US11055706
申请日：2005-02-11
申请人： Kouichi Yoshioka , Morio Ogura , Masayuki Fujita , Yasumi Kobayashi , Kenichiro Wakisaka
发明人： Kouichi Yoshioka , Morio Ogura , Masayuki Fujita , Yasumi Kobayashi , Kenichiro Wakisaka
IPC分类号： H03H9/145 , H01L21/4763 , H01L41/04 , H01L41/08 , H01L41/18 , H02N2/00 , H03H9/02 , H03H9/64
CPC分类号： H03H9/6489 , H03H9/02094 , H03H9/02929 , H03H9/14541
摘要： The present invention provides a surface acoustic wave device comprising an electrode 8 to serve as an interdigital transducer, the electrode 8 including a bottom Ti layer 2, Al alloy layer 3, upper Ti layer 4, and Al alloy layer 7 which are superposed one after another on a surface of a piezoelectric substrate 1. A thickness A of the bottom Ti layer 2 is greater than a thickness C of the upper Ti layer, and is not less than 50 nm nor more than 120 nm. The sum of the thickness A of the bottom Ti layer 2 and the thickness C of the upper Ti layer 4 is less than 150 nm. Accordingly, with the surface acoustic wave device, occurrence of migration is inhibited to obtain a higher durability than conventionally.
摘要翻译：本发明提供一种表面声波装置，其包括用作叉指式换能器的电极8，电极8包括底部Ti层2，铝合金层3，上Ti层4和铝合金层7，后叠层另一个在压电基板1的表面上。底部Ti层2的厚度A大于上部Ti层的厚度C，为50nm以上且120nm以下。底部Ti层2的厚度A与上部Ti层4的厚度C的和小于150nm。因此，通过表面声波装置，抑制迁移的发生，获得比以往更高的耐久性。

3. 发明授权

US06703130B2 Substrate coated with transparent conductive film and manufacturing method thereof 失效
标题翻译：涂有透明导电膜的基板及其制造方法
公开(公告)号：US06703130B2
公开(公告)日：2004-03-09
申请号：US10234198
申请日：2002-09-05
申请人： Morio Ogura , Tatsuro Usuki
发明人： Morio Ogura , Tatsuro Usuki
IPC分类号： B32B1500
CPC分类号： C22C28/00 , C23C14/0047 , C23C14/086 , C23C14/46 , Y10S428/913 , Y10T428/31623
摘要： A substrate coated with a transparent conductive film is manufactured by: disposing a substrate 3 and a target 5 constituted of alloy of In and Sn in a film deposition chamber 1; leading an Ar gas ion beam into the film deposition chamber 1, to cause collision of the ion beam with the target 5, sputtering-emission of constitutive atoms of the target 5, and supply of the emitted atoms to the substrate 3; and leading oxide gas including oxygen radicals as a main element thereof from an ECR radical source 6 into the film deposition chamber 1, to deposit an ITO film 9 on the substrate 3. In this manufacturing method, a film is deposited on a film or substrate including an organic material without damaging the organic material. The deposited film has low resistivity, high transmission and preferable flatness.
摘要翻译：通过以下步骤制造涂覆有透明导电膜的基板：将由基板3和由In和Sn的合金构成的靶5设置在成膜室1中; 将Ar气体离子束引导到成膜室1中，引起离子束与靶5的碰撞，靶5的组成原子的溅射发射，以及将发射的原子供给到基板3; 将包含氧自由基作为主要成分的氧化物气体从ECR自由基源6引入成膜室1中，在基板3上沉积ITO膜9.在该制造方法中，将膜沉积在膜或基板上包括有机材料，而不损坏有机材料。沉积膜具有低电阻率，高透射率和优选的平坦度。

4. 发明授权

US06420815B1 Substrate for surface acoustic wave device and surface acoustic wave device 有权
标题翻译：表面声波装置和表面声波装置用基板
公开(公告)号：US06420815B1
公开(公告)日：2002-07-16
申请号：US09662766
申请日：2000-09-15
申请人： Naoki Tanaka , Morio Ogura
发明人： Naoki Tanaka , Morio Ogura
IPC分类号： H03H925
CPC分类号： H03H9/02574 , H03H9/02543 , H03H9/02559
摘要： An SAW device substrate and an SAW device having a larger value of K2 than conventional SAW device substrates can be obtained by using LiNbO3 represented by Eulerian angles of (18-30°, 80-100°, 35-75°) and determining the thickness H of a piezoelectric substrate and the pitch &lgr; of electrodes so that KH is at least 2.3 and at most 4.5. Alternatively, an Li2B4O7 layer is formed as a piezoelectric substrate on a surface of a glass layer to obtain an Li2B4O7/glass structured SAW device substrate. More preferably, such Li2B4O7 that is represented by Eulerian angles of (0-45°, 85-95°, 85-95°) is employed. Furthermore, the SAW device substrate is used to form an SAW device so that the KH parameter is about 0.5.
摘要翻译：通过使用由欧拉角度（18-30°，80-100°，35-75°）表示的LiNbO 3并确定厚度可以获得具有比常规SAW器件衬底更大的K2值的SAW器件衬底和SAW器件 H和压电基片的间距，使KH为2.3以上4.5以下。或者，在玻璃层的表面上形成作为压电基板的Li2B4O7层，得到Li2B4O7 /玻璃结构的SAW元件基板。更优选地，使用（0-45°，85-95°，85-95°）的欧拉角表示的这种Li2B4O7。此外，SAW器件衬底用于形成SAW器件，使得KH参数为约0.5。

5. 发明授权

US06310423B1 Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US06310423B1
公开(公告)日：2001-10-30
申请号：US09533666
申请日：2000-03-23
申请人： Naoki Tanaka , Morio Ogura
发明人： Naoki Tanaka , Morio Ogura
IPC分类号： H01L41107
CPC分类号： H03H9/02559
摘要： An SAW device includes a glass substrate, an LiNbO3 (LN) substrate, and an electrode. When a pitch of the electrode is &lgr;, a thickness of the LN substrate is H, and K equals to 2&pgr;/&lgr;, a product of K and H is at least 0.5 and at most 1.0. Accordingly, an SAW device is obtained which is provided with high K2 and an enhanced temperature characteristic and which can be advantageously reduced in size.
摘要翻译： SAW器件包括玻璃衬底，LiNbO 3（LN）衬底和电极。当电极的间距为羔羊时，LN衬底的厚度为H，K等于2pi / lambd，K和H的乘积为至少0.5且至多为1.0。因此，获得了具有高K2和增强的温度特性并且可以有利地减小尺寸的SAW器件。

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