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1. 发明申请

US20120028188A1 PHOTORESIST COMPOSITION 有权
标题翻译：光电组合物
公开(公告)号：US20120028188A1
公开(公告)日：2012-02-02
申请号：US13190173
申请日：2011-07-25
申请人： Koji ICHIKAWA , Mitsuhiro HATA , Takahiro YASUE
发明人： Koji ICHIKAWA , Mitsuhiro HATA , Takahiro YASUE
IPC分类号： G03F7/20 , G03F7/027
CPC分类号： G03F7/0045 , G03F7/0397
摘要： The present invention provides a photoresist composition comprisinga resin which comprises a structural unit derived from a compound having an acid-labile group and which is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid, an acid generator and a compound represented by the formula (I): wherein R1 and R2 are independently in each occurrence a C1-C12 hydrocarbon group, a C1-C6 alkoxy group, a C2-C7 acyl group, a C2-C7 acyloxy group, a C2-C7 alkoxycarbonyl group, a nitro group or a halogen atom, and m and n independently each represent an integer of 0 to 4.
摘要翻译：本发明提供一种光致抗蚀剂组合物，其包含树脂，其包含衍生自具有酸不稳定基团的化合物的结构单元，其在碱性水溶液中不溶或难溶于碱性水溶液，但通过酸，酸产生剂和由式（I）表示的化合物：其中R1和R2在每次出现时独立地为C1-C12烃基，C1-C6烷氧基，C2-C7酰基，C2-C7 酰氧基，C 2 -C 7烷氧基羰基，硝基或卤素原子，m和n分别表示0〜4的整数。

2. 发明授权

US08062829B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography 有权
标题翻译：用于浸没光刻的化学放大抗蚀剂组合物和化学放大抗蚀剂组合物
公开(公告)号：US08062829B2
公开(公告)日：2011-11-22
申请号：US12395963
申请日：2009-03-02
申请人： Mitsuhiro Hata , Yusuke Fuji , Takayuki Miyagawa
发明人： Mitsuhiro Hata , Yusuke Fuji , Takayuki Miyagawa
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041 , Y10S430/106 , Y10S430/111 , Y10S430/122
摘要： A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). wherein X1 represents a hydrogen atom, a C1 to C4 alkyl group, etc., Y in each occurrence independently represent a hydrogen atom or an alkyl group, and n is an integer of 1 to 14, R1 to R4 independently represent a hydrogen atom, an alkyl group, etc., and A+ represents an organic counterion, E− represents CF3SO3—, C2F5SO3—, C4F9SO3—, etc., Y1 and Y2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group.
摘要翻译：一种化学放大抗蚀剂组合物，其包含：树脂，其包含在侧链中具有酸不稳定基团的结构单元，由式（I）表示的结构单元和具有多环内酯结构的结构单元，并且其是可溶的在有机溶剂中，不溶于或难溶于碱水溶液，但通过酸的作用可溶于碱水溶液; 和由式（II）表示的酸发生剂。其中X 1表示氢原子，C 1〜C 4烷基等，Y各自独立地表示氢原子或烷基，n表示1〜14的整数，R 1〜R 4分别表示氢原子，烷基等，A +表示有机抗衡离子，E表示CF 3 SO 3 - ，C 2 F 5 SO 3 - ，C 4 F 9 SO 3 - 等，Y 1和Y 2分别表示氟原子或C 1〜C 6全氟烷基。

3. 发明授权

US07985529B2 Mask patterns including gel layers for semiconductor device fabrication 有权
标题翻译：掩模图案包括用于半导体器件制造的凝胶层
公开(公告)号：US07985529B2
公开(公告)日：2011-07-26
申请号：US12496185
申请日：2009-07-01
申请人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
发明人： Mitsuhiro Hata , Hyun-woo Kim , Jung-hwan Hah , Sang-gyun Woo
IPC分类号： G03F7/11
CPC分类号： G03F7/40 , G03F7/023 , G03F7/0382 , G03F7/0392
摘要： Mask patterns include a resist pattern and a gel layer on a surface of the resist pattern having a junction including hydrogen bonds between a proton donor polymer and a proton acceptor polymer. Methods of forming the mask patterns and methods of fabricating a semiconductor device using the mask patterns as etching masks are also provided.
摘要翻译：掩模图案包括抗蚀剂图案和抗蚀剂图案表面上的凝胶层，其具有包含质子供体聚合物和质子受体聚合物之间的氢键的连接点。还提供了形成掩模图案的方法和使用掩模图案制造半导体器件作为蚀刻掩模的方法。

4. 发明授权

US07981985B2 Polymer and chemically amplified resist composition comprising the same 有权
标题翻译：包含其的聚合物和化学增幅抗蚀剂组合物
公开(公告)号：US07981985B2
公开(公告)日：2011-07-19
申请号：US12426038
申请日：2009-04-17
申请人： Yusuke Fuji , Mitsuhiro Hata
发明人： Yusuke Fuji , Mitsuhiro Hata
IPC分类号： C08F224/00 , G03F7/004 , C08F4/04
CPC分类号： C08F220/10 , C08F220/18 , C08F220/28 , C08F220/32
摘要： The present invention provides a polymer containing a structural unit represented by the formula (Ia) or (Ib): wherein R1, R2, R3, n, Z1, R4, R5 and m are defined in the specification, a structural unit represented by the formula (II): wherein R6, R7, R8, R9, Z2, n′ and Z′ are defined in the specification, and a structural unit represented by the formula (III): wherein R10, R11, 1′ and Z3 are defined in the specification.
摘要翻译：本发明提供含有由式（Ia）或（Ib）表示的结构单元的聚合物：其中R1，R2，R3，n，Z1，R4，R5和m在说明书中定义，由式（II）：其中R 6，R 7，R 8，R 9，Z 2，n'和Z'在本说明书中定义，和由式（III）表示的结构单元：其中R10，R11,1'和Z3被定义在规范中。

5. 发明申请

US20110165521A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
标题翻译：生产光电子图案的工艺
公开(公告)号：US20110165521A1
公开(公告)日：2011-07-07
申请号：US12978952
申请日：2010-12-27
申请人： Mitsuhiro HATA , Jung Hwan HAH
发明人： Mitsuhiro HATA , Jung Hwan HAH
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： Process for producing a photoresist pattern containing the steps: (A) applying a first photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain, an acid generator and a cross-linking agent on a substrate to form a first photoresist film, exposing the film to radiation followed by developing the film, to form a first photoresist pattern; (B) making the first photoresist pattern inactive to radiation, insoluble in an alkaline developer or insoluble in a second photoresist composition in step (C); (C) applying a second photoresist composition containing a resin having a structural unit containing an acid-labile group in its side chain and at least one acid generator of formula (I) or (II) defined in the specification, on the first photoresist pattern, to form a second photoresist film, exposing the film to radiation; and (D) developing the exposed film, to form a second photoresist pattern.
摘要翻译：制造光致抗蚀剂图案的方法包括以下步骤：（A）在基材上涂布含有其侧链上含有酸不稳定基团的结构单元的树脂的第一光致抗蚀剂组合物，在基材上形成酸产生剂和交联剂，以形成第一光致抗蚀剂膜，将膜暴露于辐射，随后显影膜，以形成第一光致抗蚀剂图案; （B）使步骤（C）中第一光致抗蚀剂图案对放射线不起作用，不溶于碱性显影剂或不溶于第二光致抗蚀剂组合物; （C）在第一光致抗蚀剂图案上，在其侧链中施加含有具有含有酸不稳定基团的结构单元的树脂的第二光致抗蚀剂组合物和至少一种在说明书中定义的式（I）或（II）的酸产生剂，以形成第二光致抗蚀剂膜，将膜暴露于辐射; 和（D）显影曝光的薄膜，形成第二光刻胶图形。

6. 发明申请

US20110091820A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20110091820A1
公开(公告)日：2011-04-21
申请号：US12999300
申请日：2009-06-10
申请人： Mitsuhiro Hata , Takashi Hiraoka , Junji Shigematsu
发明人： Mitsuhiro Hata , Takashi Hiraoka , Junji Shigematsu
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： A resist processing method has: (1) a step of applying a first resist composition comprising a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through an action of an acid, a photo acid generator (B) and a cross-linking agent (C) to obtain a first resist film; (2) a step of prebaking the first resist film; (3) a step of exposure processing the first resist film; (4) a step of post-exposure baking the first resist film; (5) a step of developing with a first alkali developer to obtain a first resist pattern; (6) a step of hard-baking by maintaining the first resist pattern at a temperature which is lower than a glass transition temperature of the above-mentioned first resist composition for a predetermined period of time, and then maintaining the first resist pattern at a temperature which is the glass transition temperature of the first resist composition or higher for a predetermined period of time; (7) a step of applying a second resist composition onto the first resist pattern, and then drying to obtain a second resist film; (8) a step of pre-baking the second resist film; (9) a step of exposure processing the second resist film; (10) a step of post-exposure baking the second resist film; and (11) a step of developing with a second alkali developer liquid to obtain a second resist pattern.
摘要翻译：抗蚀剂处理方法具有以下步骤：（1）将含有酸不稳定基团的树脂（A）的第一抗蚀剂组合物施加到碱性水溶液中不溶或难溶于水溶液的步骤，通过酸，光酸产生剂（B）和交联剂（C）的作用，得到第一抗蚀剂膜; （2）预烘烤第一抗蚀剂膜的步骤; （3）曝光处理第一抗蚀膜的步骤; （4）第一抗蚀剂膜的后曝光烘烤步骤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案的步骤; （6）通过将第一抗蚀剂图案保持在比上述第一抗蚀剂组合物的玻璃化转变温度低的温度持续预定时间来进行硬烘烤的步骤，然后将第一抗蚀剂图案保持在温度是第一抗蚀剂组合物的玻璃化转变温度或更高的预定时间; （7）将第二抗蚀剂组合物涂布在第一抗蚀剂图案上，然后干燥以获得第二抗蚀剂膜的步骤; （8）预烘烤第二抗蚀剂膜的步骤; （9）曝光处理所述第二抗蚀剂膜的步骤; （10）第二抗蚀剂膜的后曝光烘烤步骤; 和（11）用第二碱性显影液显影以获得第二抗蚀剂图案的步骤。

7. 发明申请

US20110039209A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME 失效
标题翻译：化合物和含有它们的光电组合物
公开(公告)号：US20110039209A1
公开(公告)日：2011-02-17
申请号：US12852237
申请日：2010-08-06
申请人： Tatsuro Masuyama , Mitsuhiro Hata
发明人： Tatsuro Masuyama , Mitsuhiro Hata
IPC分类号： G03F7/004 , C07C271/28 , C07C271/22 , C07D207/16
CPC分类号： C07D207/16 , C07C271/22 , C07C271/24 , C07C271/28 , C07C271/34 , C07C271/36 , C07C271/38 , C07C2601/14 , C07C2602/28 , C07C2603/74 , C07D209/44 , C07D211/60 , G03F7/0045
摘要： The present invention provides a compound represented by the formula (C1): wherein Rc2 represents a C6-C10 aromatic hydrocarbon group having at least one nitro group and Rc1 represents a group represented by the formula (1): wherein Rc4 represents a hydrogen atom etc., Rc5 represents a C1-C30 divalent hydrocarbon group, and Rc3 represents a group represented by the formula (3-1), (3-2) or (3-3): wherein Rc6, Rc7, Rc8, Rc9, Rc10, Rc11, Rc12, Rc13 and Rc14 each independently represent a C1-C30 hydrocarbon group, and a photoresist composition comprising a resin, an acid generator and the compound represented by the formula (C1).
摘要翻译：本发明提供由式（C1）表示的化合物：其中Rc2表示具有至少一个硝基的C6-C10芳族烃基，Rc1表示由式（1）表示的基团：其中Rc4表示氢原子等 Rc5表示C1-C30二价烃基，Rc3表示由式（3-1），（3-2）或（3-3）表示的基团：其中Rc6，Rc7，Rc8，Rc9，Rc10， Rc11，Rc12，Rc13和Rc14各自独立地表示C1-C30烃基，以及包含树脂，酸产生剂和由式（C1）表示的化合物的光致抗蚀剂组合物。

8. 发明授权

US07855038B2 Mask patterns for semiconductor device fabrication and related methods and structures 失效
标题翻译：半导体器件制造的掩模图案及相关方法和结构
公开(公告)号：US07855038B2
公开(公告)日：2010-12-21
申请号：US12042625
申请日：2008-03-05
申请人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
发明人： Jung-hwan Hah , Hyun-woo Kim , Mitsuhiro Hata , Sang-gyun Woo
IPC分类号： G03F9/00
CPC分类号： H01L21/0274 , G03F7/405 , H01L21/0273 , H01L21/31144
摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.
摘要翻译：形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。还讨论了相关结构。

9. 发明授权

US07642042B2 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US07642042B2
公开(公告)日：2010-01-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： G03F7/11 , G03F7/30
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

10. 发明授权

US07468235B2 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US07468235B2
公开(公告)日：2008-12-23
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00 , G03C1/76 , G03F7/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1; 0.1≦1/(1+m+n)≦0.7; 0.3≦m/(1+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf为C1〜C5氟取代烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

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