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1. 发明授权

US08691648B1 Methods for fabricating semiconductor memory with process induced strain 有权
标题翻译：用工艺诱导应变制造半导体存储器的方法
公开(公告)号：US08691648B1
公开(公告)日：2014-04-08
申请号：US13168711
申请日：2011-06-24
申请人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar , Jeong Soo Byun
发明人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar , Jeong Soo Byun
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L29/66833 , H01L29/792
摘要： Non-volatile semiconductor memories and methods of fabricating the same to improve performance thereof are provided. In one embodiment, the method includes: (i) forming a gate for a non-volatile memory transistor on a surface of a substrate overlaying a channel region formed therein, the gate including a charge trapping layer; and (ii) forming a strain inducing structure over the gate of the non-volatile memory transistor to increase charge retention of the charge trapping layer. Preferably, the memory transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) transistor comprising a SONOS gate stack. More preferably, the memory also includes a logic transistor on the substrate, and the step of forming a strain inducing structure comprises the step of forming the strain inducing structure over the logic transistor. Other embodiments are also disclosed.
摘要翻译：提供非易失性半导体存储器及其制造方法以改善其性能。在一个实施例中，该方法包括：（i）在覆盖其中形成的沟道区的衬底的表面上形成用于非易失性存储晶体管的栅极，栅极包括电荷俘获层; 和（ii）在非易失性存储晶体管的栅极上形成应变诱导结构，以增加电荷俘获层的电荷保留。优选地，存储晶体管是包括SONOS栅极堆叠的氧化硅 - 氧化物 - 氮化物 - 氧化物 - 硅（SONOS）晶体管。更优选地，存储器还包括在衬底上的逻辑晶体管，并且形成应变诱导结构的步骤包括在逻辑晶体管上形成应变诱导结构的步骤。还公开了其他实施例。

2. 发明授权

US08168933B2 Method for forming image sensor with shield structures 有权
标题翻译：用屏蔽结构形成图像传感器的方法
公开(公告)号：US08168933B2
公开(公告)日：2012-05-01
申请号：US13227376
申请日：2011-09-07
申请人： Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
发明人： Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
IPC分类号： H01L27/00
CPC分类号： H01L27/14685 , H01L27/14625 , H01L27/14687
摘要： An image sensor having shield structures and methods of forming the same are provided. Generally, the image sensor includes: (i) substrate having at least one photosensitive element formed therein; (ii) a dielectric layer overlying the substrate and the photosensitive element; and (iii) an annular reflective waveguide disposed in the dielectric layer above the photosensitive element to reduce cross-talk between adjacent elements of the sensor while increasing sensitivity of the sensor. In certain embodiments, the sensor further includes a photoshield disposed in the dielectric above the photosensitive element and about the waveguide to further reduce the possibility of cross-talk. Other embodiments are also disclosed.
摘要翻译：提供具有屏蔽结构的图像传感器及其形成方法。通常，图像传感器包括：（i）具有形成在其中的至少一个感光元件的基板; （ii）覆盖所述基底和所述感光元件的电介质层; 和（iii）设置在光敏元件上方的电介质层中的环形反射波导，以减小传感器的相邻元件之间的串扰，同时增加传感器的灵敏度。在某些实施例中，传感器还包括设置在感光元件上方的电介质中以及围绕波导的光电二极管，以进一步降低串扰的可能性。还公开了其他实施例。

3. 发明授权

US08119538B1 Oxide formation in a plasma process 有权
标题翻译：在等离子体工艺中形成氧化物
公开(公告)号：US08119538B1
公开(公告)日：2012-02-21
申请号：US11836683
申请日：2007-08-09
申请人： Jeong Soo Byun , Krishnaswamy Ramkumar
发明人： Jeong Soo Byun , Krishnaswamy Ramkumar
IPC分类号： H01L21/31
CPC分类号： H01L21/28282 , H01L21/02164 , H01L21/02238 , H01L21/02323 , H01L21/02326
摘要： A method of making a semiconductor structure is provided. The method includes forming a dielectric layer using a high density plasma oxidation process. The dielectric layer is on a storage layer and the thickness of the storage layer is reduced during the high density plasma oxidation process.
摘要翻译：提供制造半导体结构的方法。该方法包括使用高密度等离子体氧化工艺形成介电层。电介质层在存储层上，并且在高密度等离子体氧化过程中存储层的厚度减小。

4. 发明授权

US07749815B2 Methods for depositing tungsten after surface treatment 有权
标题翻译：表面处理后沉积钨的方法
公开(公告)号：US07749815B2
公开(公告)日：2010-07-06
申请号：US11768647
申请日：2007-06-26
申请人： Jeong Soo Byun
发明人： Jeong Soo Byun
IPC分类号： H01L21/82
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/14 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate containing a metal nitride barrier layer within a process chamber and exposing the substrate to a reagent gas containing diborane to form a reagent layer on the metal nitride barrier layer. The method further provides exposing the substrate sequentially to a tungsten precursor and a reductant to form a nucleation layer during an atomic layer deposition (ALD) process and subsequently depositing a bulk layer over the nucleation layer. The bulk layer may contain copper, but generally contains tungsten deposited by a chemical vapor deposition (CVD) process. In some examples, the bulk layer may be used to fill apertures within the substrate.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括将包含金属氮化物阻挡层的基板定位在处理室内，并将基板暴露于含有乙硼烷的反应气体上，以形成试剂层金属氮化物阻挡层。该方法进一步提供了在原子层沉积（ALD）工艺期间将衬底依次暴露于钨前体和还原剂以形成成核层，随后在成核层上沉积体层。本体层可以包含铜，但通常包含通过化学气相沉积（CVD）工艺沉积的钨。在一些实例中，本体层可用于填充衬底内的孔。

5. 发明申请

US20100099270A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20100099270A1
公开(公告)日：2010-04-22
申请号：US12646706
申请日：2009-12-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： H01L21/302 , G06F17/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

6. 发明申请

US20100093170A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20100093170A1
公开(公告)日：2010-04-15
申请号：US12645117
申请日：2009-12-22
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/3205
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

7. 发明授权

US07501343B2 Formation of boride barrier layers using chemisorption techniques 有权
标题翻译：使用化学吸附技术形成硼化物阻挡层
公开(公告)号：US07501343B2
公开(公告)日：2009-03-10
申请号：US11739545
申请日：2007-04-24
申请人： Jeong Soo Byun , Alfred Mak
发明人： Jeong Soo Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a metal precursor to form a first boride-containing layer during a first sequential chemisorption process and exposing the substrate to the boron-containing compound, the metal precursor, and a second precursor to form a second boride-containing layer on the first boride-containing layer during a second sequential chemisorption process. In one example, the metal precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.
摘要翻译：在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和金属前体以形成第一含硼化物层，在第二顺序化学吸附过程期间，将基底暴露于含硼化合物，金属前体和第二前体，以在第一含硼化物层上形成第二含硼化物层。在一个实例中，金属前体含有六氟化钨，含硼化合物含有乙硼烷。在另一个实施方案中，在第二含硼化物层上沉积接触层。接触层可以含有钨并通过化学气相沉积工艺进行沉积。或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。

8. 发明授权

US07384867B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07384867B2
公开(公告)日：2008-06-10
申请号：US11206491
申请日：2005-08-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

9. 发明授权

US07115494B2 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
标题翻译：控制难熔金属层中氟的存在的方法和系统
公开(公告)号：US07115494B2
公开(公告)日：2006-10-03
申请号：US11338565
申请日：2006-01-24
申请人： Ashok Sinha , Ming Xi , Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： Ashok Sinha , Ming Xi , Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.
摘要翻译：通过控制其中所含的氟的存在来降低难熔金属层的电阻的方法和系统。本发明基于以下发现：当采用ALD技术在基底上形成难熔金属层时，所用载体会影响所得层中氟的存在。结果，该方法具有化学吸附到底物上的第一化合物和第二化合物的交替单层，第二化合物具有与之有关的氟原子，其中第一和第二化合物中的每一个与第一和第二化合物一起被引入处理室用于控制与第二化合物的单层相关的氟原子的量的载气。

10. 发明授权

US07033922B2 Method and system for controlling the presence of fluorine in refractory metal layers 有权
$Method and system for controlling the presence of fluorine in refractory metal layers$
公开(公告)号：US07033922B2
公开(公告)日：2006-04-25
申请号：US10951354
申请日：2004-09-29
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

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