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    • 2. 发明授权
    • Zinc oxide semiconductor and method of manufacturing the same
    • 氧化锌半导体及其制造方法
    • US07842539B2
    • 2010-11-30
    • US12145371
    • 2008-06-24
    • Seong Ju ParkMin Suk OhDae Kyu HwangMin Ki Kwon
    • Seong Ju ParkMin Suk OhDae Kyu HwangMin Ki Kwon
    • H01L21/00
    • H01L29/22H01L21/02554H01L21/02579H01L21/02631H01L21/02672Y10S438/903
    • There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
    • 提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。 在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层,并对其进行热处理,使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜 的p型半导体。 存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。 因此,通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子,并且用作载流子的空穴的浓度增加。 也就是说,将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。
    • 5. 发明授权
    • Zinc oxide light emitting diode
    • 氧化锌发光二极管
    • US07755098B2
    • 2010-07-13
    • US12419706
    • 2009-04-07
    • Seong-Ju ParkDae-Kue HwangMin-Ki KwonMin-Suk OhYong-Seok Choi
    • Seong-Ju ParkDae-Kue HwangMin-Ki KwonMin-Suk OhYong-Seok Choi
    • H01L33/00
    • H01L33/28H01L33/02
    • Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
    • 提供了具有改善的光学特性的氧化锌发光二极管。 氧化锌发光二极管包括n型半导体层,形成在n型半导体层上的氧化锌有源层,形成在有源层上的p型半导体层,与p型电接触的阳极 半导体层,与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。 由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间,所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层,并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。
    • 8. 发明授权
    • Photonic crystal light emitting device
    • 光子晶体发光装置
    • US07763881B2
    • 2010-07-27
    • US12182509
    • 2008-07-30
    • Dong Yul LeeSeong Ju ParkMin Ki KwonJa Yeon KimDong Joon KimYong Chun KimJe Won Kim
    • Dong Yul LeeSeong Ju ParkMin Ki KwonJa Yeon KimDong Joon KimYong Chun KimJe Won Kim
    • H01L29/06
    • H01L33/08H01L33/44H01L2933/0083
    • There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.
    • 提供了一种光子晶体发光器件,包括:衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构,所述纳米棒状发光结构包括第一导电型半导体层,有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极,其中纳米棒发光结构以预定的尺寸和周期排列,以形成从有源层发射的光的光子带隙, 由此纳米棒发光结构限定了光子晶体结构。 在光子晶体发光器件中,纳米棒发光结构被布置成限定光子晶体以增强光提取效率。
    • 9. 发明申请
    • ZINC OXIDE LIGHT EMITTING DIODE
    • 氧化锌发光二极管
    • US20090256148A1
    • 2009-10-15
    • US12419706
    • 2009-04-07
    • Seong-Ju PARKDae-Kue HWANGMin-Ki KWONMin-Suk OHYong-Seok CHOI
    • Seong-Ju PARKDae-Kue HWANGMin-Ki KWONMin-Suk OHYong-Seok CHOI
    • H01L33/00H01L29/12
    • H01L33/28H01L33/02
    • Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
    • 提供了具有改善的光学特性的氧化锌发光二极管。 氧化锌发光二极管包括n型半导体层,形成在n型半导体层上的氧化锌有源层,形成在有源层上的p型半导体层,与p型电接触的阳极 半导体层,与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。 由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间,所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层,并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。