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1. 发明授权

US08405103B2 Photonic crystal light emitting device and manufacturing method of the same 有权
标题翻译：光子晶体发光器件及其制造方法相同
公开(公告)号：US08405103B2
公开(公告)日：2013-03-26
申请号：US12182383
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

2. 发明授权

US07842539B2 Zinc oxide semiconductor and method of manufacturing the same 有权
标题翻译：氧化锌半导体及其制造方法
公开(公告)号：US07842539B2
公开(公告)日：2010-11-30
申请号：US12145371
申请日：2008-06-24
申请人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
发明人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
IPC分类号： H01L21/00
CPC分类号： H01L29/22 , H01L21/02554 , H01L21/02579 , H01L21/02631 , H01L21/02672 , Y10S438/903
摘要： There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
摘要翻译：提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层，并对其进行热处理，使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜的p型半导体。存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。因此，通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子，并且用作载流子的空穴的浓度增加。也就是说，将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。

3. 发明授权

US07575944B2 Method of manufacturing nitride-based semiconductor light emitting diode 失效
标题翻译：制造氮化物基半导体发光二极管的方法
公开(公告)号：US07575944B2
公开(公告)日：2009-08-18
申请号：US11889392
申请日：2007-08-13
申请人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
发明人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
IPC分类号： H01L21/4763
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
摘要翻译：本发明提供一种在基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层的氮化物系半导体LED的制造方法。在p型氮化物半导体层上形成Pd / Zn合金层; 热处理形成有Pd / Zn合金层的p型氮化物半导体层; 去除形成在p型氮化物半导体层上的Pd / Zn合金层; p型氮化物半导体层，有源层和n型氮化物半导体层的台面蚀刻部分，使得n型氮化物半导体层的上表面的一部分露出; 以及在暴露的n型氮化物半导体层和p型氮化物半导体层上分别形成n电极和p电极。

4. 发明申请

US20100181588A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100181588A1
公开(公告)日：2010-07-22
申请号：US12628467
申请日：2009-12-01
申请人： Dong Yul LEE , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
发明人： Dong Yul LEE , Seong Ju Park , Min Ki Kwon , Chu Young Cho , Chang Hee Cho , Yong Chun Kim , Seung Beom Seo , Myung Goo Cheong , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/06
摘要： Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer disposed therebetween, and a surface plasmon layer disposed between the active layer and at least one of the n-type and p-type semiconductor layers, including metallic particles and an insulating material, and including a conductive via for electrical connection between the active layer and the at least one of the n-type and p-type semiconductor layers, wherein the metallic particles are enclosed by the insulating material to be insulated from the at least one of the n-type and p-type semiconductor layers. The semiconductor light emitting device can achieve enhanced emission efficiency by using surface plasmon resonance. Using the semiconductor light emitting device, the diffusion of a metal employed for surface plasmon resonance into the active layer can be minimized.
摘要翻译：公开了一种半导体发光器件。半导体发光器件包括n型半导体层，p型半导体层和设置在其间的有源层，以及设置在有源层与n型和p型之间的至少一种之间的表面等离子体膜层包括金属颗粒和绝缘材料的半导体层，并且包括用于在有源层和n型和p型半导体层中的至少一个之间电连接的导电通孔，其中金属颗粒被绝缘材料包围与n型和p型半导体层中的至少一种绝缘。半导体发光器件可以通过使用表面等离子体共振来实现增强的发射效率。使用半导体发光器件，可以将用于表面等离子体共振的金属的扩散最小化。

5. 发明授权

US07755098B2 Zinc oxide light emitting diode 失效
标题翻译：氧化锌发光二极管
公开(公告)号：US07755098B2
公开(公告)日：2010-07-13
申请号：US12419706
申请日：2009-04-07
申请人： Seong-Ju Park , Dae-Kue Hwang , Min-Ki Kwon , Min-Suk Oh , Yong-Seok Choi
发明人： Seong-Ju Park , Dae-Kue Hwang , Min-Ki Kwon , Min-Suk Oh , Yong-Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/28 , H01L33/02
摘要： Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
摘要翻译：提供了具有改善的光学特性的氧化锌发光二极管。氧化锌发光二极管包括n型半导体层，形成在n型半导体层上的氧化锌有源层，形成在有源层上的p型半导体层，与p型电接触的阳极半导体层，与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间，所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层，并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。

6. 发明申请

US20090184334A1 PHOTONIC CRYSTAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：光电晶体发光器件及其制造方法
公开(公告)号：US20090184334A1
公开(公告)日：2009-07-23
申请号：US12182383
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Yong Chun Kim , Bang Won Oh , Seok Min Hwang , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。

7. 发明授权

US09166098B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US09166098B2
公开(公告)日：2015-10-20
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00 , H01S5/30 , H01S5/00 , H01S5/32 , H01L33/06 , H01L33/02 , H01L33/32
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译：提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

8. 发明授权

US07763881B2 Photonic crystal light emitting device 失效
标题翻译：光子晶体发光装置
公开(公告)号：US07763881B2
公开(公告)日：2010-07-27
申请号：US12182509
申请日：2008-07-30
申请人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Dong Joon Kim , Yong Chun Kim , Je Won Kim
发明人： Dong Yul Lee , Seong Ju Park , Min Ki Kwon , Ja Yeon Kim , Dong Joon Kim , Yong Chun Kim , Je Won Kim
IPC分类号： H01L29/06
CPC分类号： H01L33/08 , H01L33/44 , H01L2933/0083
摘要： There is provided a photonic crystal light emitting device including: a substrate; a plurality of nano rod light emitting structures formed on the substrate to be spaced apart from one another, each of the nano rod light emitting structures including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively, wherein the nano rod light emitting structures are arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the nano rod light emitting structures define a photonic crystal structure. In the photonic crystal light emitting device, the nano rod light emitting structures are arranged to define a photonic crystal to enhance light extraction efficiency.
摘要翻译：提供了一种光子晶体发光器件，包括：衬底; 形成在所述基板上彼此间隔开的多个纳米棒状发光结构，所述纳米棒状发光结构包括第一导电型半导体层，有源层和第二导电型半导体层; 以及分别与第一和第二导电类型半导体层电连接的第一和第二电极，其中纳米棒发光结构以预定的尺寸和周期排列，以形成从有源层发射的光的光子带隙，由此纳米棒发光结构限定了光子晶体结构。在光子晶体发光器件中，纳米棒发光结构被布置成限定光子晶体以增强光提取效率。

9. 发明申请

US20090256148A1 ZINC OXIDE LIGHT EMITTING DIODE 失效
标题翻译：氧化锌发光二极管
公开(公告)号：US20090256148A1
公开(公告)日：2009-10-15
申请号：US12419706
申请日：2009-04-07
申请人： Seong-Ju PARK , Dae-Kue HWANG , Min-Ki KWON , Min-Suk OH , Yong-Seok CHOI
发明人： Seong-Ju PARK , Dae-Kue HWANG , Min-Ki KWON , Min-Suk OH , Yong-Seok CHOI
IPC分类号： H01L33/00 , H01L29/12
CPC分类号： H01L33/28 , H01L33/02
摘要： Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
摘要翻译：提供了具有改善的光学特性的氧化锌发光二极管。氧化锌发光二极管包括n型半导体层，形成在n型半导体层上的氧化锌有源层，形成在有源层上的p型半导体层，与p型电接触的阳极半导体层，与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间，所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层，并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。

10. 发明申请

US20090001363A1 ZINC OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氧化锌半导体及其制造方法
公开(公告)号：US20090001363A1
公开(公告)日：2009-01-01
申请号：US12145371
申请日：2008-06-24
申请人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
发明人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/22 , H01L21/02554 , H01L21/02579 , H01L21/02631 , H01L21/02672 , Y10S438/903
摘要： There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
摘要翻译：提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层，并对其进行热处理，使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜的p型半导体。存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。因此，通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子，并且用作载流子的空穴的浓度增加。也就是说，将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。

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