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1. 发明授权

US08410497B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08410497B2
公开(公告)日：2013-04-02
申请号：US12338438
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/641
摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
摘要翻译：提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

2. 发明申请

US20100019223A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20100019223A1
公开(公告)日：2010-01-28
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译：提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

3. 发明申请

US20110123399A1 DEVICE FOR MEASURING PROTEINS USING BIOSENSOR 审中-公开
标题翻译：使用生物传感器测量蛋白质的装置
公开(公告)号：US20110123399A1
公开(公告)日：2011-05-26
申请号：US13003998
申请日：2009-05-13
申请人： Hakhyun Nam , Su-Moon Park , Jin-Young Park , Joo Young Cho
发明人： Hakhyun Nam , Su-Moon Park , Jin-Young Park , Joo Young Cho
IPC分类号： B01J19/00
CPC分类号： G01N27/02 , G01N27/3276 , G01N33/5438
摘要： A sensor for measuring a protein with a measurement speed improved from a conventional impedance measurement, using a biosensor is provided. The sensor is capable of efficiently and accurately measuring impedance generated by a selective binding to the protein by Fourier-transforming an electric current signal which is obtained by applying a potential signal of a delta function waveform.The device for measuring a protein using a biosensor includes the biosensor including a sample inlet through which a sample is drawn in, a working electrode on which a receptor layer is coated for selective binding to the specific protein in the drawn sample, and a measuring unit including a reference electrode to form a potential difference with the working electrode, a function generator which applies a potential signal in the form of delta function to the working electrode and the reference electrode, and a data processing unit which measures impedance of the working electrode by Fourier-transforming an electric current obtained in response to the delta function waveform.Accordingly, with the device for measuring a protein using a biosensor is capable of measuring concentration of the protein with accuracy, measurement time is shortened and the concentration of protein can be accurately measured by removing the influence of dispersion.
摘要翻译：提供了一种使用生物传感器从传统阻抗测量中测量具有测量速度的蛋白质传感器。该传感器能够通过对通过应用增量函数波形的电位信号获得的电流信号进行傅立叶变换来有效且准确地测量通过与蛋白质的选择性结合产生的阻抗。用于使用生物传感器测量蛋白质的装置包括：生物传感器，其包括样品入口，样品通过其吸入;在其上涂覆受体层的工作电极，用于选择性地结合拉伸样品中的特定蛋白质;以及测量单元包括与工作电极形成电位差的参考电极，将函数发生器以delta函数的形式施加到工作电极和参考电极，以及数据处理单元，其通过以下步骤测量工作电极的阻抗：傅里叶变换响应于Δ函数波形而获得的电流。因此，使用生物传感器测定蛋白质的装置能够准确地测定蛋白质的浓度，因此缩短了测定时间，能够通过去除分散的影响来精确地测定蛋白质的浓度。

4. 发明申请

US20100019258A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100019258A1
公开(公告)日：2010-01-28
申请号：US12338438
申请日：2008-12-18
申请人： Sang Won KANG , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
发明人： Sang Won KANG , Seong Ju Park , Joo Young Cho , Il Kyu Park , Yong Chun Kim , Dong Joon Kim , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/32 , H01L33/387 , H01L33/40 , H01L33/641
摘要： There is provided a semiconductor light emitting device that can easily dissipate heat, improve current spreading efficiency, and reduce defects by blocking dislocations occurring when a semiconductor layer is grown to thereby increase reliability. A semiconductor light emitting device including a substrate, a light emitting structure having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially laminated, and an n-type electrode and a p-type electrode formed on the n-type semiconductor layer and the p-type semiconductor layer, respectively, according to an aspect of the invention may include: a metal layer formed in the n-type semiconductor layer and contacting the n-type electrode.
摘要翻译：提供了一种半导体发光器件，其可以容易地散热，提高电流扩散效率，并且通过阻止半导体层生长时发生的位错从而降低可靠性，从而减少缺陷。一种半导体发光器件，包括基板，依次层叠有n型半导体层，有源层和p型半导体层的发光结构，以及形成在所述n型半导体层上的n型电极和p型电极 n型半导体层和p型半导体层可以包括：形成在n型半导体层中并与n型电极接触的金属层。

5. 发明授权

US09166098B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US09166098B2
公开(公告)日：2015-10-20
申请号：US12338496
申请日：2008-12-18
申请人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
发明人： Sang Won Kang , Seong Ju Park , Min Ki Kwon , Sang Jun Lee , Joo Young Cho , Yong Chun Kim , Sang Heon Han , Dong Ju Lee , Jeong Tak Oh , Je Won Kim
IPC分类号： H01L33/00 , H01S5/30 , H01S5/00 , H01S5/32 , H01L33/06 , H01L33/02 , H01L33/32
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer.
摘要翻译：提供了包括多量子阱结构的有源层的氮化物半导体发光器件，所述氮化物半导体发光器件包括：衬底; 以及依次层叠在所述基板上的缓冲层，n型氮化物半导体层，有源层和p型氮化物半导体层，其中，所述有源层由多个势垒层和多个阱层彼此交替布置，并且多个势垒层中的至少一个包括第一阻挡层，其包括掺杂有p掺杂剂和未掺杂阻挡层的p掺杂势垒层。

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