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    • 1. 发明授权
    • Diffractive thin-film piezoelectric micromirror and method of producing the same
    • 衍射薄膜压电微镜及其制造方法
    • US07626745B2
    • 2009-12-01
    • US10952556
    • 2004-09-28
    • Sang Kyeong YunJong-Hyeong SongSeung-Do AnMin-Suk Oh
    • Sang Kyeong YunJong-Hyeong SongSeung-Do AnMin-Suk Oh
    • G02B26/12
    • G02B26/0808G09F9/372
    • Disclosed is a diffractive micromirror and a method of producing the same. More particularly, the present invention pertains to a diffractive thin-film piezoelectric micromirror, which is operated in a piezoelectric operation manner to assure excellent displacement, operation speed, reliability, linearity, and low voltage operation, and a method of producing the same. The diffractive thin-film piezoelectric micromirror includes a silicon substrate on which a recess is formed to provide an air space to the center thereof, and a piezoelectric mirror layer having a band shape, which is attached to the silicon substrate along both ends of the recess at both ends thereof while being spaced from the bottom of the recess at a center portion thereof and which includes a thin-film piezoelectric material layer to be vertically movable when voltage is applied to the piezoelectric material layer, and thus diffracts an incident light beam.
    • 公开了一种衍射微镜及其制造方法。 更具体地,本发明涉及以压电操作方式操作以确保优异的位移,操作速度,可靠性,线性和低电压操作的衍射薄膜压电微镜及其制造方法。 衍射薄膜压电微反射镜包括硅基板,其上形成有凹部以在其中心提供空气空间;以及具有带状的压电反射镜层,其沿着凹部的两端附接到硅基板 同时在其中心部分与凹部的底部间隔开,并且包括薄膜压电材料层,当电压施加到压电材料层时可以垂直移动,从而衍射入射光束。
    • 3. 发明申请
    • ZINC OXIDE LIGHT EMITTING DIODE
    • 氧化锌发光二极管
    • US20090256148A1
    • 2009-10-15
    • US12419706
    • 2009-04-07
    • Seong-Ju PARKDae-Kue HWANGMin-Ki KWONMin-Suk OHYong-Seok CHOI
    • Seong-Ju PARKDae-Kue HWANGMin-Ki KWONMin-Suk OHYong-Seok CHOI
    • H01L33/00H01L29/12
    • H01L33/28H01L33/02
    • Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
    • 提供了具有改善的光学特性的氧化锌发光二极管。 氧化锌发光二极管包括n型半导体层,形成在n型半导体层上的氧化锌有源层,形成在有源层上的p型半导体层,与p型电接触的阳极 半导体层,与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。 由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间,所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层,并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。
    • 5. 发明授权
    • Zinc oxide semiconductor and method of manufacturing the same
    • 氧化锌半导体及其制造方法
    • US07842539B2
    • 2010-11-30
    • US12145371
    • 2008-06-24
    • Seong Ju ParkMin Suk OhDae Kyu HwangMin Ki Kwon
    • Seong Ju ParkMin Suk OhDae Kyu HwangMin Ki Kwon
    • H01L21/00
    • H01L29/22H01L21/02554H01L21/02579H01L21/02631H01L21/02672Y10S438/903
    • There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
    • 提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。 在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层,并对其进行热处理,使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜 的p型半导体。 存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。 因此,通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子,并且用作载流子的空穴的浓度增加。 也就是说,将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。
    • 8. 发明授权
    • Zinc oxide light emitting diode
    • 氧化锌发光二极管
    • US07755098B2
    • 2010-07-13
    • US12419706
    • 2009-04-07
    • Seong-Ju ParkDae-Kue HwangMin-Ki KwonMin-Suk OhYong-Seok Choi
    • Seong-Ju ParkDae-Kue HwangMin-Ki KwonMin-Suk OhYong-Seok Choi
    • H01L33/00
    • H01L33/28H01L33/02
    • Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
    • 提供了具有改善的光学特性的氧化锌发光二极管。 氧化锌发光二极管包括n型半导体层,形成在n型半导体层上的氧化锌有源层,形成在有源层上的p型半导体层,与p型电接触的阳极 半导体层,与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。 由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间,所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层,并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。