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1. 发明授权

US07626745B2 Diffractive thin-film piezoelectric micromirror and method of producing the same 失效
$Diffractive thin-film piezoelectric micromirror and method of producing the same$
标题翻译：衍射薄膜压电微镜及其制造方法
公开(公告)号：US07626745B2
公开(公告)日：2009-12-01
申请号：US10952556
申请日：2004-09-28
申请人： Sang Kyeong Yun , Jong-Hyeong Song , Seung-Do An , Min-Suk Oh
发明人： Sang Kyeong Yun , Jong-Hyeong Song , Seung-Do An , Min-Suk Oh
IPC分类号： G02B26/12
CPC分类号： G02B26/0808 , G09F9/372
摘要： Disclosed is a diffractive micromirror and a method of producing the same. More particularly, the present invention pertains to a diffractive thin-film piezoelectric micromirror, which is operated in a piezoelectric operation manner to assure excellent displacement, operation speed, reliability, linearity, and low voltage operation, and a method of producing the same. The diffractive thin-film piezoelectric micromirror includes a silicon substrate on which a recess is formed to provide an air space to the center thereof, and a piezoelectric mirror layer having a band shape, which is attached to the silicon substrate along both ends of the recess at both ends thereof while being spaced from the bottom of the recess at a center portion thereof and which includes a thin-film piezoelectric material layer to be vertically movable when voltage is applied to the piezoelectric material layer, and thus diffracts an incident light beam.
摘要翻译：公开了一种衍射微镜及其制造方法。更具体地，本发明涉及以压电操作方式操作以确保优异的位移，操作速度，可靠性，线性和低电压操作的衍射薄膜压电微镜及其制造方法。衍射薄膜压电微反射镜包括硅基板，其上形成有凹部以在其中心提供空气空间;以及具有带状的压电反射镜层，其沿着凹部的两端附接到硅基板同时在其中心部分与凹部的底部间隔开，并且包括薄膜压电材料层，当电压施加到压电材料层时可以垂直移动，从而衍射入射光束。

2. 发明授权

US09302449B2 High corrosion resistant hot dip Zn alloy plated steel sheet 有权
标题翻译：高耐腐蚀热浸锌合金镀层钢板
公开(公告)号：US09302449B2
公开(公告)日：2016-04-05
申请号：US13824445
申请日：2011-12-26
申请人： Sang-Heon Kim , Young-Sool Jin , Min-Suk Oh , Su-Young Kim , Bong-Hwan Yoo
发明人： Sang-Heon Kim , Young-Sool Jin , Min-Suk Oh , Su-Young Kim , Bong-Hwan Yoo
IPC分类号： B32B15/01 , C23C2/28 , C23C2/06 , C23C2/20 , C23C2/26
CPC分类号： B32B15/013 , C23C2/06 , C23C2/20 , C23C2/26 , C23C2/28 , Y10T428/12535 , Y10T428/12799 , Y10T428/12972 , Y10T428/12979 , Y10T428/12993 , Y10T428/27
摘要： Provided is a hot dip zinc (Zn) alloy plated steel sheet having excellent corrosion resistance and surface qualities, and a method of manufacturing the same. For this purpose, provided is a high corrosion resistant hot dip Zn alloy plated steel sheet which includes an underlying steel sheet and a hot dip Zn alloy plating layer, wherein a composition of the hot dip Zn alloy plating layer includes 1 to 3 wt % of aluminum (Al), 1.5 to 4.0 wt % of magnesium (Mg), and Zn and unavoidable impurities as a remainder, in which Al+Mg is in a range of 2.5 to 7.0 wt % and Al: (Al+Mg) ratio is in a range of 0.38 to 0.48, and a method of manufacturing the high corrosion resistant hot dip Zn alloy plated steel sheet.
摘要翻译：提供了具有优异的耐腐蚀性和表面特性的热浸锌（Zn）合金镀覆钢板及其制造方法。为此，提供了一种高耐腐蚀性的热浸镀锌钢板，其包括下面的钢板和热浸镀Zn合金镀层，其中热浸镀锌合金镀层的组成包括1至3重量％的铝（Al），1.5〜4.0重量％的镁（Mg），Zn和不可避免的杂质作为余量，Al + Mg在2.5〜7.0重量％的范围内，Al：（Al + Mg）比为在0.38〜0.48的范围内，以及制造耐腐蚀性高的镀锌钢合金钢板的方法。

3. 发明授权

US07755098B2 Zinc oxide light emitting diode 失效
标题翻译：氧化锌发光二极管
公开(公告)号：US07755098B2
公开(公告)日：2010-07-13
申请号：US12419706
申请日：2009-04-07
申请人： Seong-Ju Park , Dae-Kue Hwang , Min-Ki Kwon , Min-Suk Oh , Yong-Seok Choi
发明人： Seong-Ju Park , Dae-Kue Hwang , Min-Ki Kwon , Min-Suk Oh , Yong-Seok Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/28 , H01L33/02
摘要： Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
摘要翻译：提供了具有改善的光学特性的氧化锌发光二极管。氧化锌发光二极管包括n型半导体层，形成在n型半导体层上的氧化锌有源层，形成在有源层上的p型半导体层，与p型电接触的阳极半导体层，与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间，所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层，并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。

4. 发明申请

US20110027535A1 ANISOTROPIC PARTICLE-ARRANGED STRUCTURE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：各向异性颗粒结构及其制造方法
公开(公告)号：US20110027535A1
公开(公告)日：2011-02-03
申请号：US12846309
申请日：2010-07-29
申请人： Chul Jong HAN , Yong Hoon KIM , Min Suk OH , Soon Hyung KWON
发明人： Chul Jong HAN , Yong Hoon KIM , Min Suk OH , Soon Hyung KWON
IPC分类号： B32B3/10 , B05D1/04 , H05K3/00
CPC分类号： H01L24/27 , H01L21/6835 , H01L24/29 , H01L2221/68359 , H01L2224/2929 , H01L2224/29299 , H01L2224/83101 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01079 , H01L2924/14 , H01L2924/15788 , H01R4/04 , H01R13/2414 , H01R43/007 , Y10T428/24612 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2924/00
摘要： Provided are a light, thin, short and small, and multi-functional anisotropic particle-arranged structure including two electrodes having fine pitches that are repeatedly compressed to be connected to external elements, and a method of manufacturing the anisotropic particle-arranged structure. The anisotropic particle-arranged structure includes an elastic polymer layer, and elastic conductors or elastic thermal conductors formed in the elastic polymer layer so that upper and lower portions of the elastic conductors or elastic thermal conductors are exposed.
摘要翻译：本发明提供一种轻，薄，短，小，多功能的各向异性粒子排列结构，包括具有重复压缩以连接到外部元件的细间距的两个电极，以及制造各向异性粒子排列结构的方法。各向异性粒子排列结构包括弹性聚合物层，以及形成在弹性聚合物层中的弹性导体或弹性热导体，使得弹性导体或弹性热导体的上部和下部暴露。

5. 发明申请

US20090256148A1 ZINC OXIDE LIGHT EMITTING DIODE 失效
标题翻译：氧化锌发光二极管
公开(公告)号：US20090256148A1
公开(公告)日：2009-10-15
申请号：US12419706
申请日：2009-04-07
申请人： Seong-Ju PARK , Dae-Kue HWANG , Min-Ki KWON , Min-Suk OH , Yong-Seok CHOI
发明人： Seong-Ju PARK , Dae-Kue HWANG , Min-Ki KWON , Min-Suk OH , Yong-Seok CHOI
IPC分类号： H01L33/00 , H01L29/12
CPC分类号： H01L33/28 , H01L33/02
摘要： Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.
摘要翻译：提供了具有改善的光学特性的氧化锌发光二极管。氧化锌发光二极管包括n型半导体层，形成在n型半导体层上的氧化锌有源层，形成在有源层上的p型半导体层，与p型电接触的阳极半导体层，与n型半导体层电接触的阴极以及设置在n型半导体层与有源层之间或者在有源层与p型半导体层之间的表面等离子体质子层。由于表面等离子体膜层形成在n型半导体层和有源层之间或有源层与p型半导体层之间，所以发光二极管不受由于厚度的降低导致的电阻增加的影响 p型半导体层，并且由于表面等离子体激元层和活性层之间的共振现象而具有改善的光学特性。

6. 发明申请

US20090001363A1 ZINC OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氧化锌半导体及其制造方法
公开(公告)号：US20090001363A1
公开(公告)日：2009-01-01
申请号：US12145371
申请日：2008-06-24
申请人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
发明人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/22 , H01L21/02554 , H01L21/02579 , H01L21/02631 , H01L21/02672 , Y10S438/903
摘要： There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
摘要翻译：提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层，并对其进行热处理，使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜的p型半导体。存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。因此，通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子，并且用作载流子的空穴的浓度增加。也就是说，将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。

7. 发明申请

US20130183541A1 High Corrosion Resistant Hot Dip Zn Alloy Plated Steel Sheet and Method of Manufacturing the Same 有权
标题翻译：高耐腐蚀热浸Zn合金镀层及其制造方法
公开(公告)号：US20130183541A1
公开(公告)日：2013-07-18
申请号：US13824445
申请日：2011-12-26
申请人： Sang-Heon Kim , Young-Sool Jin , Min-Suk Oh , Su-Young Kim , Bong-Hwan Yoo
发明人： Sang-Heon Kim , Young-Sool Jin , Min-Suk Oh , Su-Young Kim , Bong-Hwan Yoo
IPC分类号： B32B15/01 , C23C2/28
CPC分类号： B32B15/013 , C23C2/06 , C23C2/20 , C23C2/26 , C23C2/28 , Y10T428/12535 , Y10T428/12799 , Y10T428/12972 , Y10T428/12979 , Y10T428/12993 , Y10T428/27
摘要： Provided is a hot dip zinc (Zn) alloy plated steel sheet having excellent corrosion resistance and surface qualities, and a method of manufacturing the same. For this purpose, the present invention provides a high corrosion resistant hot dip Zn alloy plated steel sheet which includes an underlying steel sheet and a hot dip Zn alloy plating layer, wherein a composition of the hot dip Zn alloy plating layer includes 1 to 3 wt % of aluminum (Al), 1.5 to 4.0 wt % of magnesium (Mg), and Zn and avoidable impurities as a remainder, in which Al+Mg is in a range of 2.5 to 7.0 wt % and Al:(Al+Mg) is in a range of 0.38 to 0.48, and a method of manufacturing the high corrosion resistant hot dip Zn alloy plated steel sheet.
摘要翻译：提供了具有优异的耐腐蚀性和表面特性的热浸锌（Zn）合金镀覆钢板及其制造方法。为此，本发明提供一种高耐腐蚀性的热浸镀Zn合金镀层钢板，其包括下面的钢板和热浸镀锌合金镀层，其中热浸镀锌合金镀层的组成包括1〜3重量％ Al + Mg为2.5〜7.0重量％，Al：（Al + Mg）的比例为Al（Al），1.5〜4.0重量％的镁（Mg），Zn和作为余量的可避免的杂质，在0.38〜0.48的范围内，以及制造耐腐蚀性高的镀锌钢合金钢板的方法。

8. 发明授权

US07443076B2 Diffractive thin-film piezoelectric light modulator and method of fabricating the same 失效
$Diffractive thin-film piezoelectric light modulator and method of fabricating the same$
标题翻译：衍射薄膜压电光调制器及其制造方法
公开(公告)号：US07443076B2
公开(公告)日：2008-10-28
申请号：US11112733
申请日：2005-04-22
申请人： Min Suk Oh , Yun Jin Ko , Jong Sam Kim
发明人： Min Suk Oh , Yun Jin Ko , Jong Sam Kim
IPC分类号： H01L41/08
CPC分类号： G02B26/0808 , G02B26/0858
摘要： Disclosed herein is a diffractive thin-film piezoelectric light modulator, in which a lower protective layer is formed on a lower support to prevent the lower support from being over-etched when etching, thus increasing the surface smoothness of the lower support and of a micro-mirror. In addition, a method of fabricating the diffractive thin-film piezoelectric light modulator is also provided.
摘要翻译：本文公开了一种衍射薄膜压电光调制器，其中在下支撑件上形成下保护层以防止在蚀刻时下支撑件被过度蚀刻，从而增加下支撑件和微支架的表面平滑度 -镜子。此外，还提供了制造衍射薄膜压电光调制器的方法。

9. 发明授权

US07289258B2 Light modulator having variable blaze diffraction grating 失效
$Light modulator having variable blaze diffraction grating$
标题翻译：具有可变闪耀衍射光栅的光调制器
公开(公告)号：US07289258B2
公开(公告)日：2007-10-30
申请号：US11171625
申请日：2005-06-30
申请人： Yoon Shik Hong , Seung Hee Suh , Min Suk Oh , Ohk Kun Lim , Seung Heon Han
发明人： Yoon Shik Hong , Seung Hee Suh , Min Suk Oh , Ohk Kun Lim , Seung Heon Han
IPC分类号： G02B26/00 , G02B5/18
CPC分类号： G02B26/0808
摘要： The present invention relates, in general, to a light modulator having a variable blaze diffraction grating and, more particularly, to a light modulator having a variable blaze diffraction grating, in which a diffraction member rotates due to piezoelectric force so as to incline a reflective surface.
摘要翻译：本发明一般涉及具有可变闪耀衍射光栅的光调制器，更具体地，涉及具有可变闪耀衍射光栅的光调制器，其中衍射元件由于压电力而旋转以倾斜反射表面。

10. 发明授权

US07842539B2 Zinc oxide semiconductor and method of manufacturing the same 有权
标题翻译：氧化锌半导体及其制造方法
公开(公告)号：US07842539B2
公开(公告)日：2010-11-30
申请号：US12145371
申请日：2008-06-24
申请人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
发明人： Seong Ju Park , Min Suk Oh , Dae Kyu Hwang , Min Ki Kwon
IPC分类号： H01L21/00
CPC分类号： H01L29/22 , H01L21/02554 , H01L21/02579 , H01L21/02631 , H01L21/02672 , Y10S438/903
摘要： There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor.
摘要翻译：提供一种制造氧化锌半导体的方法和使用该方法制造的氧化锌半导体。在具有n型半导体的电特性的氧化锌薄膜上形成金属催化剂层，并对其进行热处理，使得氧化锌薄膜被修饰为具有电特性的氧化锌薄膜的p型半导体。存在于氧化锌薄膜中的氢原子在热处理期间被金属催化剂除去。因此，通过金属催化剂和热处理除去存在于氧化锌薄膜中的氢原子，并且用作载流子的空穴的浓度增加。也就是说，将n型氧化锌薄膜改性为高浓度的p型氧化锌半导体。

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