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    • 2. 发明授权
    • Electrical continuity tester
    • 电气连续性测试仪
    • US07633298B1
    • 2009-12-15
    • US11829985
    • 2007-07-30
    • Meng-Chiao KanMeng-Feng TsaiCongjun GouQuingjun LiLihua Zhang
    • Meng-Chiao KanMeng-Feng TsaiCongjun GouQuingjun LiLihua Zhang
    • G01R31/02
    • G01R31/026G01R1/04H01R24/58H01R2103/00
    • A continuity tester for a lamp, coaxial, plug connector has a receptacle connector with first and second coaxial, annular receptacle contacts at a same axial spacing apart as power and ground contacts of the lamp connector for electrical engagement when plugged therein and, a probe contact engageable with only the power contact. First and second LEDs connect to a battery via first and second parallel circuits. A biasing resistor in the second circuit ensures that battery power is provided to only the first LED when a battery circuit is completed only by electrical engagement of the first contact and the probe contact with the power contact of the male coaxial connector to signal absence of a short circuit and to only the second LED when a circuit is completed also by engagement of the second tester contact with the ground contact of the lamp connector to signal a short circuit.
    • 用于灯,同轴插头连接器的连续性测试器具有插座连接器,其具有第一和第二同轴的环形插座触头,该插座连接器具有与灯连接器的电源和接地触点相同的轴向间隔,用于当插入其中时用于电接合,并且探针接触 只能与电源接触。 第一和第二LED通过第一和第二并联电路连接到电池。 第二电路中的偏置电阻确保仅当第一LED仅通过第一触点的电接合和与阳同轴连接器的电源触点的探针接触而完成电池电路而仅提供给第一LED,因为信号不存在 通过第二测试器接触与灯连接器的接地触点的接合来发出短路,当电路完成时也仅仅是第二个LED。
    • 7. 发明授权
    • Method for forming contact hole
    • 形成接触孔的方法
    • US08709946B2
    • 2014-04-29
    • US13364252
    • 2012-02-01
    • Meng-Feng TsaiYi-Shiang ChangChia-Chi LinI-Hsin ChenChia-Ming Wu
    • Meng-Feng TsaiYi-Shiang ChangChia-Chi LinI-Hsin ChenChia-Ming Wu
    • H01L21/44
    • H01L21/76816H01L21/0273H01L21/0337H01L21/0338H01L21/31144
    • A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.
    • 形成接触孔的方法包括以下步骤。 提供了包括密集区域和隔离区域的衬底。 在基板上形成材料层。 牺牲图案形成在致密区域的材料层上,其中在两个相邻的牺牲图案之间存在第一开口。 在每个牺牲图案的两侧的每一侧上形成间隔件,其中间隔件彼此分离。 去除牺牲的图案以在两个相邻间隔物之间​​形成第二开口。 形成平面层以填充第二开口。 第一狭缝形成在平面层中,其中第一狭缝暴露第二开口下方的材料层的一部分。 去除由第一狭缝暴露的材料层的部分以在材料层中形成第三开口。
    • 8. 发明申请
    • METHOD FOR FORMING CONTACT HOLE
    • 形成接触孔的方法
    • US20130137270A1
    • 2013-05-30
    • US13364252
    • 2012-02-01
    • Meng-Feng TsaiYi-Shiang ChangChia-Chi LinI-Hsin ChenChia-Ming Wu
    • Meng-Feng TsaiYi-Shiang ChangChia-Chi LinI-Hsin ChenChia-Ming Wu
    • H01L21/32
    • H01L21/76816H01L21/0273H01L21/0337H01L21/0338H01L21/31144
    • A method for forming contact holes includes following steps. A substrate including a dense region and an isolation region is provided. A material layer is formed on the substrate. Sacrificed patterns are formed on the material layer in the dense region, wherein there is a first opening between the two adjacent sacrificed patterns. A spacer is formed on each of two sides of each of the sacrificed patterns, wherein the spacers are separated from each other. The sacrificed patterns are removed to form a second opening between two adjacent spacers. A planar layer is formed to fill up the second openings. A first slit is formed in the planar layer, wherein the first slit exposes a portion of the material layer under the second openings. The portion of the material layer exposed by the first slit is removed to form third openings in the material layer.
    • 形成接触孔的方法包括以下步骤。 提供了包括密集区域和隔离区域的衬底。 在基板上形成材料层。 牺牲图案形成在致密区域的材料层上,其中在两个相邻的牺牲图案之间存在第一开口。 在每个牺牲图案的两侧的每一侧上形成间隔件,其中间隔件彼此分离。 去除牺牲的图案以在两个相邻间隔物之间​​形成第二开口。 形成平面层以填充第二开口。 第一狭缝形成在平面层中,其中第一狭缝暴露第二开口下方的材料层的一部分。 去除由第一狭缝暴露的材料层的部分以在材料层中形成第三开口。
    • 9. 发明授权
    • Method and structure for performing a chemical mechanical polishing process
    • 进行化学机械抛光工艺的方法和结构
    • US08105899B2
    • 2012-01-31
    • US12647367
    • 2009-12-24
    • Lily JiangMeng Feng TsaiJian Guang Chang
    • Lily JiangMeng Feng TsaiJian Guang Chang
    • H01L21/336H01L21/3205H01L21/302H01L21/31
    • H01L27/11521H01L21/28273H01L21/3212H01L21/84H01L29/66825
    • A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a dielectric material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region. The method forms at least one dielectric spacer within the first recessed region and at least one dielectric spacer within the second recessed region to form a resulting surface region, and subjects the resulting surface region to a chemical mechanical polishing process to cause formation of a substantially planarized second polysilicon layer free from the dielectric material.
    • 提供了一种用于制造闪存器件的方法,例如NAND,NOR。 该方法包括提供半导体衬底。 该方法包括形成覆盖多个浮动栅结构的第二多晶硅层,以形成设置在第二多晶硅层上的上表面。 上表面具有第一凹陷区域和第二凹陷区域。 该方法包括沉积覆盖上表面的电介质材料以填充第一凹陷区域和第二凹陷区域以形成第二上表面区域并覆盖第一升高区域,第二升高区域和第三升高区域。 该方法在第一凹陷区域内形成至少一个电介质间隔物,以及在第二凹陷区域内形成至少一个电介质间隔物,以形成所得表面区域,并使得到的表面区域进行化学机械抛光工艺,以形成基本平坦化的 第二多晶硅层不含介电材料。