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    • 6. 发明授权
    • FET type sensor and a method for driving the same
    • FET型传感器及其驱动方法
    • US4698657A
    • 1987-10-06
    • US697640
    • 1985-02-04
    • Masanori WatanabeMasaya Hijikigawa
    • Masanori WatanabeMasaya Hijikigawa
    • G01N27/414G01N27/12
    • G01N27/414
    • A field effect transistor-type sensor comprising a field effect transistor device incorporated with a sensitive means exhibiting electric variation due to a physical or chemical interaction with the physical quantity to be detected, wherein an auxiliary electrode for the application of a drift-cancellation voltage to said sensitive means is located on said sensitive means, thereby suppressing the influence of impurities and/or ions contained in the sensitive means and/or the interface between the sensitive means and the field effect transistor device, or impurities and/or ions contaminating the device from the external atmosphere during use thereof, on the operation and/or the output of the field effect transistor device, and maintaining the stable output characteristic over a long period of time.
    • 一种场效应晶体管型传感器,包括场效应晶体管器件,其结合有由于与要检测的物理量的物理或物理量的物理或化学相互作用而表现出电变化的敏感器件,其中用于将漂移消除电压施加到 所述灵敏装置位于所述敏感装置上,从而抑制敏感装置和/或敏感装置与场效应晶体管装置之间的界面中所含的杂质和/或离子的影响,或污染装置的杂质和/或离子 来自外部大气的场效应晶体管器件的操作和/或输出,并且在长时间内保持稳定的输出特性。