会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Reflow furnace
    • 回流炉
    • US09243845B2
    • 2016-01-26
    • US13514969
    • 2010-12-07
    • Takashi SugiharaHiroshi TaguchiDaisuke KasaharaKoichiro HosokawaYuta Saito
    • Takashi SugiharaHiroshi TaguchiDaisuke KasaharaKoichiro HosokawaYuta Saito
    • B23K1/00B23K1/008F27B9/30B23K1/012B23K1/015B23K3/08F27B9/24F27D17/00
    • F27B9/3005B23K1/008B23K1/012B23K1/015B23K3/08F27B9/24F27D17/001
    • To prevent evaporated flux from being attached to rotation axes of motors which rotate fans positioned in a preheating zone, a main heating zone and a cooling zone and being solidified, the evaporated flux is efficiently and surely collected with the flux liquefying before the flux is solidified and having fluidity. A drain portion 20 constituting a flux collection apparatus 10A is formed at a side of a motor base 16 opposed to the fan and at a circumferential portion of the rotation axis 14. A surface of the drain portion 20 opposed to the fan is formed as an inclined surface 20A which is inclined from a level position of the motor base 16 to a discharge port 46 provided at a back side of the motor base 16. The flux collected to a center portion of the motor base 16 by the rotation drive of the fan is flown to the drain portion 20 formed in the center portion of the motor base 16, is flown along the inclined surface 20A and contained into a collection container 34 from the drain portion 20 through the discharge port 46, a drain pipe and a pipe 48.
    • 为了防止蒸发的焊剂附着在旋转位于预热区域,主加热区域和冷却区域中的风扇的电动机的旋转轴上,并且固化,在熔剂固化之前,通过液化而使蒸发的熔剂被有效地和可靠地收集 并具有流动性。 构成磁通收集装置10A的排出部分20形成在与风扇相对的电动机底座16的一侧和旋转轴线14的周向部分处。与风扇相对的排水部分20的表面形成为 倾斜面20A从电动机底座16的高度位置倾斜到设置在电动机底座16的后侧的排出口46.通过风扇的旋转驱动而收集到电动机底座16的中心部分的磁通 流到形成在电动机基座16的中心部分的排水部分20,沿着倾斜表面20A流动并通过排放口46从排水部分20收集到收集容器34中,排水管和管道48 。
    • 3. 发明申请
    • DIFFERENTIAL CODE OPTICAL TRANSMISSION AND RECEPTION DEVICE
    • 差分代码光传输和接收设备
    • US20120128368A1
    • 2012-05-24
    • US13388079
    • 2010-10-06
    • Kiyoshi OnoharaHideo YoshidaTakashi Sugihara
    • Kiyoshi OnoharaHideo YoshidaTakashi Sugihara
    • H04B10/00
    • H04B10/516H04B10/40H04B10/60H04J3/1652H04J14/06H04J2203/0089
    • A differential code optical transmission and reception device including: a digital signal processing optical transceiver that converts information data into an optical signal and transmits it to a communication channel, a reception front end part that receives the optical signal from the communication channel, an O/E conversion part that converts the optical signal received from the communication channel into an electrical signal, a skew correction part that regulates or correct a skew between lanes contained in the electrical signal, a differential decoder that decodes a differential code of the skew corrected electrical signal, and a lane exchange/rotation part that rearranges the electrical signal having passed through the differential decoder into a lane state thereof at the time of transmission in cases where lane exchange has occurred in the communication channel.
    • 一种差分代码光发送和接收装置,包括:数字信号处理光收发器,其将信息数据转换为光信号并将其发送到通信信道;接收前端部,其从通信信道接收光信号; O / E转换部分,其将从通信信道接收的光信号转换为电信号;扭曲校正部分,其调节或校正电信号中包含的通道之间的偏斜;差分解码器,其对所述歪斜校正电信号的差分码进行解码; 以及车道交换/旋转部,在通信信道中发生车道交换的情况下,在传输时将已经通过差分解码器的电信号重新排列成车道状态。
    • 4. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 半导体存储器件及其制造方法
    • US20120007164A1
    • 2012-01-12
    • US13176895
    • 2011-07-06
    • Takashi Sugihara
    • Takashi Sugihara
    • H01L29/788H01L21/28
    • H01L27/11521
    • According to one embodiment, a method is disclosed for manufacturing a semiconductor memory device. The method can include forming a plurality of protruding portions in band configurations on a major surface of a semiconductor layer to extend along a first direction parallel to the major surface. The method can include forming an inter-layer insulating film to cover the protruding portions and an inner surface of a trench between the protruding portions. The method can include forming a buried conductive portion by filling a first conductive material into a space inside the trench. The method can include exposing a buried conductive portion side surface by dividing the buried conductive portion along the first direction. The method can include filling a second conductive material into a void of the buried conductive portion exposed at the side surface. In addition, the method can include removing one portion of the second conductive material.
    • 根据一个实施例,公开了一种用于制造半导体存储器件的方法。 该方法可以包括在半导体层的主表面上形成带状结构中的多个突出部分,以沿着平行于主表面的第一方向延伸。 该方法可以包括形成层间绝缘膜以覆盖突出部分之间的突出部分和沟槽的内表面。 该方法可以包括通过将第一导电材料填充到沟槽内的空间中来形成掩埋导电部分。 该方法可以包括通过沿着第一方向分割掩埋导电部分来暴露掩埋的导电部分侧表面。 该方法可以包括将第二导电材料填充到暴露在侧表面处的掩埋导电部分的空隙中。 此外,该方法可以包括去除第二导电材料的一部分。
    • 5. 发明申请
    • AUTOMATIC SOLDERING DEVICE AND CARRIER DEVICE
    • 自动焊接装置和载体装置
    • US20110278348A1
    • 2011-11-17
    • US13146193
    • 2010-01-26
    • Takashi SugiharaTakashi UsubaHirokazu IchikawaToshihiko Mutsuji
    • Takashi SugiharaTakashi UsubaHirokazu IchikawaToshihiko Mutsuji
    • B23K37/04B23K3/04B65G17/20B23K3/06
    • B23K1/0016B23K1/085B23K3/08B23K2101/42B65G37/005H05K3/3468
    • To enable the circuit board to be fixed on a predetermined position and to be conveyed to the solder processing portion.Conveying hooks 10 that hold the printed circuit board W1 therebetween, conveying chains 15a, 15b that drive so that the conveying hooks 10 are movable from a heater part 4 to a solder bath 5, first frames 9A that guide the conveying chains 15a, 15b along the heater part 4, second frames 9B that guide the conveying chain 15 along the solder bath 5, and an absorbing member 124 that is provided between each of the first frames 9A and each of the second frames 9B and absorbs an expansion and contraction based on difference of any thermal expansion between the frames 9A, 9B and the conveying chains 15a, 15b are provided. Since the absorbing member 124 absorbs the expansion and contraction based on difference of any thermal expansion between the frames 9A, 9B and the conveying chains 15a, 15b, it is possible to prevent the conveying chains 15a, 15b from being deviated from the frames 9A, 9B. This enables the printed circuit board W1 to be fixed on the predetermined position and to be conveyed to the heater part 4 and the solder bath 5.
    • 为了使电路板固定在预定位置并被输送到焊料处理部分。 将印刷电路板W1保持在其间的输送钩10,输送链条15a,15b,其驱动使得输送钩10能够从加热器部分4移动到焊料槽5;第一框架9A,其引导输送链条15a,15b沿着 加热器部分4,沿着焊料槽5引导输送链条15的第二框架9B和设置在每个第一框架9A和每个第二框架9B之间的吸收构件124,其基于 提供了框架9A,9B和输送链15a,15b之间的任何热膨胀差异。 由于吸收构件124基于框架9A,9B和输送链15a,15b之间的任何热膨胀的差异而吸收膨胀和收缩,因此可以防止输送链15a,15b从框架9A, 9B。 这使得印刷电路板W1能够固定在预定位置并被传送到加热器部分4和焊料槽5。
    • 8. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    • 半导体存储器件及其制造方法
    • US20090140316A1
    • 2009-06-04
    • US12277448
    • 2008-11-25
    • Takashi SugiharaMinori Kajimoto
    • Takashi SugiharaMinori Kajimoto
    • H01L21/28H01L29/788
    • H01L27/115G11C16/0483G11C16/10H01L27/11521H01L27/11524
    • A semiconductor memory device includes an insulating film formed on a semiconductor substrate, a plurality of active areas formed on the insulating film from a semiconductor layer which is formed integrally with the substrate through openings of the insulating film, the active areas being formed by being divided into a striped shape by a plurality of trenches reaching an upper surface of the insulating film, the active areas having upper surfaces and sides respectively, a first gate insulating film formed so as to cover the upper surfaces and sides of the active areas, a charge trap layer having a face located on the first gate insulating film and confronting the upper surfaces and the sides of the active areas with the first gate insulating film being interposed therebetween, a second gate insulating film formed on the charge trap layer, and a gate electrode formed on the second gate insulating film.
    • 一种半导体存储器件,包括形成在半导体衬底上的绝缘膜,形成在绝缘膜上的多个有源区,该绝缘膜与半导体层形成,该半导体层通过绝缘膜的开口与衬底一体形成,有源区通过分割形成 通过多个沟槽到达绝缘膜的上表面的条纹形状,所述有源区域分别具有上表面和侧面,形成为覆盖有源区域的上表面和侧面的第一栅极绝缘膜,电荷 捕获层,其具有位于所述第一栅极绝缘膜上的面并且与所述有源区的上表面和所述侧面间隔开所述第一栅极绝缘膜,形成在所述电荷陷阱层上的第二栅极绝缘膜,以及栅电极 形成在第二栅绝缘膜上。