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    • 2. 发明授权
    • Blazed holographic grating, method for producing the same and replica grating
    • 闪耀全息光栅,其制造方法和复制光栅
    • US07455957B2
    • 2008-11-25
    • US10993029
    • 2004-11-19
    • Masaru Koeda
    • Masaru Koeda
    • G03C5/00B29D11/00
    • G02B5/1857G03H1/182G03H2260/14G03H2260/63
    • A substrate is subjected to holographic exposure to a sinusoidal or half-sinusoidal resist pattern corresponding to grating groove thereon. Thereafter, the substrate and the resist pattern are subjected to a first etching step at which they are irradiated with an ion beam obliquely at an angle that is identical to the blaze angle in the presence of CF4 as an etching gas, whereby they are cut until the height of the resist is about ⅓ of the initial value. Thereafter, the substrate is subjected to a second etching step at which the substrate is irradiated with an ion beam in the direction corresponding to the bisector of the vertex in the presence of a mixture of CF4 and O2 as an etching gas, whereby the substrate is cut until the resist disappears completely to an extent such that some overetching occurs.
    • 对基板进行全息曝光到对应于其上的光栅槽的正弦或半正弦抗蚀图案。 此后,对基板和抗蚀剂图案进行第一蚀刻步骤,在CF 4存在下,以与闪光角度相同的角度倾斜地照射离子束作为 蚀刻气体,由此它们被切割直到抗蚀剂的高度为初始值的大约1/3。 此后,对基板进行第二蚀刻步骤,在第二蚀刻步骤中,在存在CF 4和O 3的混合物的情况下,在与顶点的二等分线对应的方向上用离子束照射基板, 作为蚀刻气体,由此基板被切割直到抗蚀剂完全消失到发生一些过蚀刻的程度。
    • 6. 发明申请
    • Blazed holographic grating, method for producing the same and replica grating
    • 闪耀全息光栅,其制造方法和复制光栅
    • US20050130072A1
    • 2005-06-16
    • US10993029
    • 2004-11-19
    • Masaru Koeda
    • Masaru Koeda
    • G02B5/18B29D11/00G03C5/00G03F7/20G03H1/18
    • G02B5/1857G03H1/182G03H2260/14G03H2260/63
    • A substrate is subjected to holographic exposure to a sinusoidal or half-sinusoidal resist pattern corresponding to grating groove thereon. Thereafter, the substrate and the resist pattern are subjected to a first etching step at which they are irradiated with an ion beam obliquely at an angle that is identical to the blaze angle in the presence of CF4 as an etching gas, whereby they are cut until the height of the resist is about ⅓ of the initial value. Thereafter, the substrate is subjected to a second etching step at which the substrate is irradiated with an ion beam in the direction corresponding to the bisector of the vertex in the presence of a mixture of CF4 and O2 as an etching gas, whereby the substrate is cut until the resist disappears completely to an extent such that some overetching occurs.
    • 对基板进行全息曝光到对应于其上的光栅槽的正弦或半正弦抗蚀图案。 此后,对基板和抗蚀剂图案进行第一蚀刻步骤,在CF 4存在下,以与闪光角度相同的角度倾斜地照射离子束作为 蚀刻气体,由此它们被切割直到抗蚀剂的高度为初始值的大约1/3。 此后,对基板进行第二蚀刻步骤,在第二蚀刻步骤中,在存在CF 4和O 3的混合物的情况下,在与顶点的二等分线对应的方向上用离子束照射基板, 作为蚀刻气体,由此基板被切割直到抗蚀剂完全消失到发生一些过蚀刻的程度。