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    • 3. 发明申请
    • VOLTAGE LEVEL GENERATOR CIRCUIT
    • 电压电平发生器电路
    • US20120249227A1
    • 2012-10-04
    • US13350795
    • 2012-01-15
    • Ryo NAKAYAMAMasaki YoshinagaYoshitaka AbeKenji HirayamaYoshihiro Hayashi
    • Ryo NAKAYAMAMasaki YoshinagaYoshitaka AbeKenji HirayamaYoshihiro Hayashi
    • G05F3/02
    • G05F3/20
    • A voltage level generator circuit comprised of a fixed voltage generator unit for generating a first electrical current in a fixed quantity from a first supply voltage; a first current mirror circuit unit including a first thin-film NMOSFET and a second thin-film NMOSFET and that outputs a second electrical current proportional to the first electrical current; a protective circuit including: a third thin-film NMOSFET and a first thick-film PMOSFET utilized as a grounded gate for protecting the second thin-film NMOSFET, a first diode for preventing inverse current flow to the first supply, and a second diode for preventing the gate-source voltage of the third thin-film NMOSFET from reaching a negative electrical potential; and a second current mirror circuit for outputting a third electrical current proportional to the second electrical current; and a first Zener diode unit for generating a first fixed voltage from a third electrical current.
    • 一种电压电平发生器电路,包括:固定电压发生器单元,用于从第一电源电压产生固定量的第一电流; 第一电流镜电路单元,包括第一薄膜NMOSFET和第二薄膜NMOSFET,并且输出与第一电流成比例的第二电流; 保护电路,包括:第三薄膜NMOSFET和用作保护第二薄膜NMOSFET的接地栅极的第一厚膜PMOSFET,用于防止反向电流流向第一电源的第一二极管和用于 防止第三薄膜NMOSFET的栅极 - 源极电压达到负电位; 以及第二电流镜电路,用于输出与第二电流成比例的第三电流; 以及用于从第三电流产生第一固定电压的第一齐纳二极管单元。