专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09305752B2 Method for operating substrate processing apparatus 有权
标题翻译：操作基板处理装置的方法
公开(公告)号：US09305752B2
公开(公告)日：2016-04-05
申请号：US13414953
申请日：2012-03-08
申请人： Yutaka Kokaze , Masahisa Ueda , Yoshiaki Yoshida
发明人： Yutaka Kokaze , Masahisa Ueda , Yoshiaki Yoshida
IPC分类号： B44C1/22 , H01J37/32 , H01L21/3213
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/32136
摘要： A method for operating a substrate processing apparatus is provided which can contain generation of particles by generating plasma in a stable manner. After a substrate is disposed in an evacuated vacuum chamber, a rare gas is initially supplied into the vacuum chamber, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Subsequently, a reaction gas is supplied into the vacuum chamber, the reaction gas is brought into contact with the plasma of the rare gas, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate; and the substrate is processed. Plasma is stably generated not by turning the reaction gas into plasma but by first turning the rare gas into plasma by the plasma generating means, and generation of particles is subsequently suppressed.
摘要翻译：提供了一种用于操作基板处理装置的方法，其可以通过以稳定的方式产生等离子体来包含颗粒的产生。将基板设置在真空室内后，最初向真空室供给稀有气体，向等离子体发生装置施加电压，产生稀有气体的等离子体。随后，将反应气体供给到真空室中，使反应气体与稀有气体的等离子体接触，产生反应气体的等离子体。使反应气体的等离子体与基板接触; 并处理基板。等离子体不是通过将反应气体转化为等离子体而是通过等离子体产生装置首先将稀有气体转化成等离子体而稳定地产生的，随后抑制了颗粒的产生。

2. 发明申请

US20080026539A1 Capacitance element manufacturing method and etching method 审中-公开
标题翻译：电容元件制造方法和蚀刻方法
公开(公告)号：US20080026539A1
公开(公告)日：2008-01-31
申请号：US11878172
申请日：2007-07-20
申请人： Yutaka Kokaze , Masahisa Ueda , Mitsuhiro Endo , Koukou Suu
发明人： Yutaka Kokaze , Masahisa Ueda , Mitsuhiro Endo , Koukou Suu
IPC分类号： H01L21/20
CPC分类号： H01L21/31138 , H01L21/31122 , H01L21/32136 , H01L21/32139 , H01L27/11502 , H01L27/11507 , H01L28/40
摘要： An etching technique suitable for miniaturization is provided. An inorganic film is formed on an object to be subjected, the object having a lower electrode film, a dielectric film, and an upper electrode film laminated in that order on a substrate. A patterned organic resist film is disposed on the surface of the inorganic film. The inorganic film, upper electrode film, and the dielectric film are etched using the organic resist film as a mask, and then, the organic resist film is removed with the gas used to etch the lower electrode film; and the lower electrode film is etched using the inorganic film as a mask that has been exposed. Since the film serving as a mask is not re-formed, a fine pattern can be produced with good precision.
摘要翻译：提供适合于小型化的蚀刻技术。在被处理物上形成无机膜，该物体在基板上依次层叠有下电极膜，电介质膜和上电极膜。图案化的有机抗蚀剂膜设置在无机膜的表面上。使用有机抗蚀剂膜作为掩模来蚀刻无机膜，上电极膜和电介质膜，然后用用于蚀刻下电极膜的气体去除有机抗蚀剂膜; 使用无机膜作为已曝光的掩模来蚀刻下部电极膜。由于不会重新形成用作掩模的膜，因此可以以高精度制造精细图案。

3. 发明申请

US20100193131A1 ASHING DEVICE 审中-公开
标题翻译： ASHING设备
公开(公告)号：US20100193131A1
公开(公告)日：2010-08-05
申请号：US12443912
申请日：2008-10-29
申请人： Masahisa Ueda , Takashi Kurimoto , Kyuzo Nakamura , Koukou Suu , Toshiya Yogo , Kazushige Komatsu , Nobusuke Tachibana
发明人： Masahisa Ueda , Takashi Kurimoto , Kyuzo Nakamura , Koukou Suu , Toshiya Yogo , Kazushige Komatsu , Nobusuke Tachibana
IPC分类号： C23F1/08
CPC分类号： H01L21/02068 , G03F7/427 , H01J37/32192 , H01J37/32467 , H01J37/32477 , H01L21/31138
摘要： An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.
摘要翻译：灰化装置可防止灰度随时间变化。灰化装置在包括处理室中的暴露金属的基板上灰化有机材料。灰化装置包括形成在处理室中并通过其提供给处理室的活性物质通过的路径。该路径由其上由活性物质从衬底散射的金属可收集的表面限定，其表面被形成以暴露同一种类的金属。

4. 发明申请

US20100151150A1 PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF DEPOSITION-INHIBITORY MEMBER 审中-公开
标题翻译：沉积物制剂等离子体处理装置及制造方法
公开(公告)号：US20100151150A1
公开(公告)日：2010-06-17
申请号：US12600650
申请日：2008-05-14
申请人： Yutaka Kokaze , Masahisa Ueda , Mitsuhiro Endou , Koukou Suu , Toshiya Miyazaki , Genji Sakata , Toshiyuki Nakamura
发明人： Yutaka Kokaze , Masahisa Ueda , Mitsuhiro Endou , Koukou Suu , Toshiya Miyazaki , Genji Sakata , Toshiyuki Nakamura
IPC分类号： C23C16/513
CPC分类号： H01J37/32467 , H01J37/32009 , H01J37/321 , H01J37/32568
摘要： A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.
摘要翻译：本发明的等离子体处理装置对待处理的基板，用贵金属材料和铁电体材料的等离子体处理进行处理，并且在加热时设置有暴露于等离子体的构成部件。该构成部件由至少99％的铝纯度的铝合金形成。

5. 发明申请

US20100083981A1 DRY CLEANING METHOD FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：用于等离子体处理装置的干燥清洗方法
公开(公告)号：US20100083981A1
公开(公告)日：2010-04-08
申请号：US12598081
申请日：2008-05-28
申请人： Masahisa Ueda , Yutaka Kokaze , Mitsuhiro Endou , Koukou Suu
发明人： Masahisa Ueda , Yutaka Kokaze , Mitsuhiro Endou , Koukou Suu
IPC分类号： B08B6/00
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/32862 , Y10S428/905
摘要： This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.
摘要翻译：等离子体处理装置的干式清洗方法是等离子体处理装置的干式清洗方法，其特征在于，包括：设置有电介质部件的真空容器; 设置在电介质构件外部的平面电极和高频天线; 以及向高频天线和平面电极提供高频电力的高频电源，从而通过电介质构件将高频电力引入真空容器，并产生电感耦合等离子体，该方法包括以下步骤：将包含氟的气体引入真空容器，并将高频电力从高频电源引入真空容器中，从而在包括氟的气体中产生电感耦合等离子体; 并且通过使用电感耦合等离子体，去除包括粘附到电介质构件的贵金属和铁电体中的至少一种的产品。

6. 发明申请

US20090275146A1 METHOD AND APPARATUS FOR MANUFACTURING DEVICE 审中-公开
标题翻译：制造装置的方法和装置
公开(公告)号：US20090275146A1
公开(公告)日：2009-11-05
申请号：US12428096
申请日：2009-04-22
申请人： Katsuo TAKANO , Takeshi KOKUBUN , Yutaka KOKAZE , Masahisa UEDA , Mitsuhiro ENDOU , Koukou SUU , Toshiya MIYAZAKI , Toshiyuki NAKAMURA
发明人： Katsuo TAKANO , Takeshi KOKUBUN , Yutaka KOKAZE , Masahisa UEDA , Mitsuhiro ENDOU , Koukou SUU , Toshiya MIYAZAKI , Toshiyuki NAKAMURA
IPC分类号： H01L21/28 , H01L43/12 , H01L21/306
CPC分类号： H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L28/55
摘要： A method for manufacturing a device, includes: (A) forming a first electrode layer on a substrate; (B) forming a ferroelectric layer on the first electrode layer; (C) forming a second electrode layer on the ferroelectric layer; (D) forming a mask having a predetermined pattern on the second electrode layer; (E) forming a memory element by selectively removing the first electrode layer, the ferroelectric layer, and the second electrode layer using the mask; and (F) removing the mask, where at least, the processes (D) and (E), or the processes (E) and (F) are continuously performed under a reduced pressure.
摘要翻译：一种器件的制造方法，包括：（A）在基板上形成第一电极层; （B）在所述第一电极层上形成铁电层; （C）在铁电层上形成第二电极层; （D）在所述第二电极层上形成具有预定图案的掩模; （E）通过使用掩模选择性地去除第一电极层，铁电层和第二电极层来形成存储元件; 和（F）去除掩模，其中至少在减压下连续进行方法（D）和（E）或方法（E）和（F）。

7. 发明申请

US20100213170A1 ETCHING METHOD AND ETCHING APPARATUS 审中-公开
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US20100213170A1
公开(公告)日：2010-08-26
申请号：US12597602
申请日：2008-06-19
申请人： Yutaka Kokaze , Mitsuhiro Endou , Masahisa Ueda , Koukou Suu , Toshiya Miyazaki , Toshiyuki Nakamura
发明人： Yutaka Kokaze , Mitsuhiro Endou , Masahisa Ueda , Koukou Suu , Toshiya Miyazaki , Toshiyuki Nakamura
IPC分类号： C23F4/00
CPC分类号： H01L21/68735 , C23F4/00 , G11C11/22 , H01J37/321 , H01J37/32568 , H01J37/32642 , H01J37/3266 , H01J2237/022 , H01J2237/2001 , H01L21/31122 , H01L21/32136 , H01L21/67069 , H01L27/11507 , H01L27/1159
摘要： An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.5 or more
摘要翻译：一种蚀刻方法，其使用具有其中蚀刻气体被等离子体激发的室的装置; 设置在所述室中的加热安装在其上的基板的台; 以及框架构件，其包括布置在工作台周围的耐腐蚀材料，并且具有布置在比工作台的上表面低的位置的上表面，所述蚀刻方法包括：将所述衬底布置在所述衬底的上表面上使得基板的周边部分在工作台上方突出; 以及将所述基板从所述框架构件的上表面的高度与所述基板的底面的高度与从所述台的侧面到所述基板的外周的突出长度的比例设定为1.5以上

8. 发明授权

US06495413B2 Structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuits 有权
标题翻译：用于屏蔽用于铁电存储器集成电路的特别实用的集成电容器的结构
公开(公告)号：US06495413B2
公开(公告)日：2002-12-17
申请号：US09797394
申请日：2001-02-28
申请人： Shan Sun , George Hickert , Diana Johnson , John Ortega , Eric Dale , Masahisa Ueda
发明人： Shan Sun , George Hickert , Diana Johnson , John Ortega , Eric Dale , Masahisa Ueda
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L21/31122 , H01L21/32136 , H01L21/32139
摘要： A method for fabricating integrated capacitors, of particular utility in forming a ferroelectric capacitor array for a ferroelectric memory integrated circuits, begins with provision of a substrate. The substrate is typically a partially-processed CMOS integrated circuit wafer coated with an adhesion layer. Upon the substrate is deposited a bottom electrode layer, typically of noble metal, a dielectric layer, typically doped PZT, and a top electrode layer, typically a noble metal oxide. Next is deposited a hardmask layer of strontium ruthenium oxide, followed by a photoresist layer. The photoresist layer is aligned, exposed, developed, and cured as known in the art of integrated circuit photolithography. The resulting stack is then dry etched to remove undesired portions of the hardmask layer, the top electrode layer, and the dielectric layer. A principle advantage of the process is that a single photomasking operation is sufficient to define the top electrode and dielectric layers.
摘要翻译：在形成用于铁电存储器集成电路的铁电电容器阵列特别有用的集成电容器的制造方法开始于提供衬底。衬底通常是涂覆有粘合层的部分处理的CMOS集成电路晶片。在衬底沉积通常为贵金属的底部电极层，通常为掺杂PZT的电介质层和通常为贵金属氧化物的顶部电极层。接下来沉积氧化钌的硬掩模层，随后是光致抗蚀剂层。如在集成电路光刻技术中已知的那样，光刻胶层被对准，曝光，显影和固化。然后将所得到的堆叠干法蚀刻以去除硬掩模层，顶部电极层和电介质层的不期望的部分。该方法的主要优点是单个光掩模操作足以限定顶部电极和电介质层。

9. 发明申请

US20120193323A1 METHOD FOR OPERATING SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：操作基板加工设备的方法
公开(公告)号：US20120193323A1
公开(公告)日：2012-08-02
申请号：US13414953
申请日：2012-03-08
申请人： Yutaka KOKAZE , Masahisa Ueda , Yoshiaki Yoshida
发明人： Yutaka KOKAZE , Masahisa Ueda , Yoshiaki Yoshida
IPC分类号： H01B13/00 , B05C9/00 , B44C1/22
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/32136
摘要： A method for operating a substrate processing apparatus is provided which can contain generation of particles by generating plasma in a stable manner. After a substrate is disposed in an evacuated vacuum chamber, a rare gas is initially supplied into the vacuum chamber, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Subsequently, a reaction gas is supplied into the vacuum chamber, the reaction gas is brought into contact with the plasma of the rare gas, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate; and the substrate is processed. Plasma is stably generated not by turning the reaction gas into plasma but by first turning the rare gas into plasma by the plasma generating means, and generation of particles is subsequently suppressed.
摘要翻译：提供了一种用于操作基板处理装置的方法，其可以通过以稳定的方式产生等离子体来包含颗粒的产生。将基板设置在真空室内后，最初向真空室供给稀有气体，向等离子体发生装置施加电压，产生稀有气体的等离子体。随后，将反应气体供给到真空室中，使反应气体与稀有气体的等离子体接触，产生反应气体的等离子体。使反应气体的等离子体与基板接触; 并处理基板。等离子体不是通过将反应气体转化为等离子体而是通过等离子体产生装置首先将稀有气体转化成等离子体而稳定地产生的，随后抑制了颗粒的产生。

10. 发明申请

US20120152889A1 METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT 审中-公开
标题翻译：制造压电元件的方法
公开(公告)号：US20120152889A1
公开(公告)日：2012-06-21
申请号：US13365652
申请日：2012-02-03
申请人： Masahisa Ueda , Yoshiaki Yoshida , Yutaka Kokaze
发明人： Masahisa Ueda , Yoshiaki Yoshida , Yutaka Kokaze
IPC分类号： H01L41/22
CPC分类号： H01L41/332
摘要： A method for manufacturing a piezoelectric element, in which a ferroelectric film is processed in an appropriate shape by plasma etching, is provided. A metal mask made of a metal thin film which is hard to be etched by oxygen gas is placed on an object to be processed formed by laminating a lower electrode layer and a ferroelectric film on a substrate in this order. An etching gas containing a mixture gas of the oxygen gas and a reactive gas including fluorine in a chemical structure is turned into plasma and is brought into contact with the metal mask and the object to be processed. An AC voltage is applied to an electrode disposed beneath the object to be processed so that ions in the plasma are caused to enter the object to be processed to perform anisotropic etching on the ferroelectric film.
摘要翻译：提供了一种通过等离子体蚀刻将强电介质膜加工成适当形状的压电元件的制造方法。将由氧气难以蚀刻的金属薄膜制成的金属掩模放置在通过在基板上依次层叠下电极层和铁电体膜而形成的被处理物体。在化学结构中含有氧气和包含氟的反应性气体的混合气体的蚀刻气体变成等离子体，并与金属掩模和待处理物体接触。将AC电压施加到设置在待处理物体下方的电极，使得等离子体中的离子进入被处理物体，以在铁电体膜上进行各向异性蚀刻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式