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1. 发明授权

US08591652B2 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy 有权
标题翻译：半导体基板和通过氢化物 - 气相外延生产独立的半导体基板的掩模层的方法
公开(公告)号：US08591652B2
公开(公告)日：2013-11-26
申请号：US11996446
申请日：2006-08-24
申请人： Christian Hennig , Markus Weyers , Eberhard Richter , Guenther Traenkle
发明人： Christian Hennig , Markus Weyers , Eberhard Richter , Guenther Traenkle
IPC分类号： C30B25/04
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02581 , H01L21/02642 , H01L21/02647
摘要： The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.
摘要翻译：本发明涉及独立式半导体衬底以及用于制造独立式半导体衬底的工艺和掩模层，其中用于形成掩模层的材料至少部分由硅化钨或硅化钨组成，其中所述半导体衬底在没有进一步的工艺步骤的情况下与所述起始衬底自分离。

2. 发明申请

US20120146047A1 P-CONTACT AND LIGHT-EMITTING DIODE FOR THE ULTRAVIOLET SPECTRAL RANGE 有权
标题翻译：用于超紫外线光谱范围的P-接触和发光二极管
公开(公告)号：US20120146047A1
公开(公告)日：2012-06-14
申请号：US13384208
申请日：2010-07-16
申请人： Michael Kneissl , Markus Weyers , Sven Einfeldt , Hernan Rodriguez
发明人： Michael Kneissl , Markus Weyers , Sven Einfeldt , Hernan Rodriguez
IPC分类号： H01L33/02
CPC分类号： H01L33/387 , H01L33/46
摘要： The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer.
摘要翻译：本发明涉及一种用于紫外光谱范围的发光二极管中的p掺杂接触，包括具有用于接触辐射区的第一表面和第二表面的p-接触层，所述第一表面包括在面向外的一侧从第一表面：a）涂层，其直接接触p接触层的第二表面的5％-99.99％，并且包含或由具有至多60％的最大反射率的材料组成，对于波长为 200nm至400nm; b）多个p型喷射器，其直接设置在p型接触层的第二表面上。

3. 发明授权

US08824518B2 Two-cavity surface-emitting laser 有权
标题翻译：双腔表面发射激光器
公开(公告)号：US08824518B2
公开(公告)日：2014-09-02
申请号：US12968727
申请日：2010-12-15
申请人： Günther Tränkle , Joachim Piprek , Hans Wenzel , Götz Erbert , Markus Weyers , Andrea Knigge
发明人： Günther Tränkle , Joachim Piprek , Hans Wenzel , Götz Erbert , Markus Weyers , Andrea Knigge
IPC分类号： H01S5/183 , H01S5/14 , H01S5/04 , H01S5/026 , H01S5/40
CPC分类号： H01S5/183 , H01S5/026 , H01S5/041 , H01S5/14 , H01S5/4025 , H01S5/4087
摘要： A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium (10) having an emission maximum at a first wavelength (λ1), wherein a first reflector (18) is arranged below the stripe-shaped active medium (10) and a second reflector (20) is arranged above the stripe-shaped active medium (10), with the first reflector (18) facing the second reflector (20), wherein the first reflector (18) and a second reflector (20) have a reflectivity maximum in the region of the first wavelength (λ1), wherein a third reflector (12) and a fourth reflector (13) are each arranged on a side above or next to the stripe-shaped active medium (10), wherein the third reflector (12) faces the fourth reflector (13), and wherein the third reflector (12) and the fourth reflector (13) have a reflectivity maximum in the region of a second wavelength (λ2), wherein the first wavelength (λ1) is greater than the second wavelength (λ2).
摘要翻译：垂直腔表面发射激光器包括具有第一波长（λ1）的发射最大值的条形有源介质（10），其中第一反射器（18）布置在条形活性介质（10）的下方，并且第二反射器（20）布置在条形有源介质（10）的上方，第一反射器（18）面向第二反射器（20），其中第一反射器（18）和第二反射器（20）具有在第一波长区域（λ1）的反射率最大值，其中第三反射器（12）和第四反射器（13）分别布置在条状活性介质（10）上方或旁边的一侧，其中，第三反射器（12）面向第四反射器（13），并且其中第三反射器（12）和第四反射器（13）在第二波长（λ2）的区域中具有反射率最大值，其中第一波长（λ1）大于第二波长（λ2）。

4. 发明申请

US20080171133A1 Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN Substrates 审中-公开
标题翻译：用于制备面向C面的Gan衬底或Al x Ga 1-x N衬底的方法
公开(公告)号：US20080171133A1
公开(公告)日：2008-07-17
申请号：US11814331
申请日：2006-01-18
申请人： Eberhard Richter , Gunther Trankle , Markus Weyers
发明人： Eberhard Richter , Gunther Trankle , Markus Weyers
IPC分类号： B05D5/12 , C30B33/00 , C30B31/00
CPC分类号： C30B29/406 , C30B25/18 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02658 , H01L21/02664
摘要： The invention relates to a method for producing c-plane GaN substrates or AlxGa1-xN substrates using an original substrate. Said method is characterized by the following steps: a tetragonal (100)-oriented or (−100)-oriented original LiAlO2 substrate is used; said original substrate is nitrided in a nitrogen compound-containing atmosphere at temperatures lying below the decomposition temperature of LiAlO2; a nucleation layer is grown at temperatures ranging between 500° C. and 700° C. by adding GaCl or AlCl or a mixture of GaCl and AlCl in a nitrogen compound-containing atmosphere; single-crystalline c-plane-oriented GaN or AlxGa1-xN is grown on the nucleation layer at temperatures ranging between 900° C. and 1050° C. by means of hydride vapor phase epitaxy (HVPE) with GaCl or AlCl or a GaCl/AlCl mixture in a nitrogen compound-containing atmosphere; and the substrate is cooled.
摘要翻译：本发明涉及使用原始衬底生产c面GaN衬底或Al x Ga 1-x N衬底的方法。所述方法的特征在于以下步骤：使用四方晶（100）取向或（ - 100）取向的原始LiAlO 2 N 2衬底; 在低于LiAlO 2分解温度的温度下，在含氮化合物的气氛中将所述原始衬底氮化; 通过在含氮化合物的气氛中加入GaCl或AlCl或GaCl和AlCl的混合物在500℃和700℃之间的温度范围内生长成核层; 在900℃和1050℃之间的温度下，在成核层上生长单晶C面取向的GaN或Al x Ga 1-x N。通过氢化物气相外延（HVPE）与GaCl或AlCl或GaCl / AlCl混合物在含氮化合物的气氛中; 并将基板冷却。

5. 发明授权

US09331246B2 P-contact and light-emitting diode for the ultraviolet spectral range 有权
标题翻译：用于紫外光谱范围的P型接触式和发光二极管
公开(公告)号：US09331246B2
公开(公告)日：2016-05-03
申请号：US13384208
申请日：2010-07-16
申请人： Michael Kneissl , Markus Weyers , Sven Einfeldt , Hernan Rodriguez
发明人： Michael Kneissl , Markus Weyers , Sven Einfeldt , Hernan Rodriguez
IPC分类号： H01L33/00 , H01L33/38 , H01L33/46
CPC分类号： H01L33/387 , H01L33/46
摘要： The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer.
摘要翻译：本发明涉及一种用于紫外光谱范围的发光二极管中的p掺杂接触，包括具有用于接触辐射区的第一表面和第二表面的p-接触层，所述第一表面包括在面向外的一侧从第一表面：a）涂层，其直接接触p接触层的第二表面的5％-99.99％，并且包含或由具有至多60％的最大反射率的材料组成，对于波长为 200nm至400nm; b）多个p型喷射器，其直接设置在p型接触层的第二表面上。

6. 发明申请

US20140070272A1 PHOTODETECTOR FOR ULTRAVIOLET RADIATION, HAVING A HIGH SENSITIVITY AND A LOW DARK CURRENT 有权
标题翻译：具有高灵敏度和低电流的超紫外线辐射光电
公开(公告)号：US20140070272A1
公开(公告)日：2014-03-13
申请号：US14115453
申请日：2012-04-26
申请人： Andrea Knigge , Markus Weyers , Hans-Joachim Wurfl
发明人： Andrea Knigge , Markus Weyers , Hans-Joachim Wurfl
IPC分类号： H01L31/0352 , H01L31/0224
CPC分类号： H01L31/035272 , H01L31/0224 , H01L31/022408 , H01L31/022466 , H01L31/03048 , H01L31/035209 , H01L31/035281 , H01L31/102 , H01L31/1085 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.
摘要翻译：本发明涉及具有高灵敏度和低暗电流的紫外光检测器。本发明的目的是指定具有高灵敏度和低暗电流的UV光电检测器。根据本发明，第一电极结构的指状物和第二电极结构的指状物具有由第二半导体材料制成的覆盖层，其中覆盖层布置在吸收层上并直接接触区域中的吸收层的手指，并且第一半导体材料和第二半导体材料被设计成使得在手指区域中的吸收层和覆盖层之间的边界层处形成二维电子气（2DEG）。

7. 发明申请

US20110228805A1 TWO-CAVITY SURFACE-EMITTING LASER 有权
标题翻译：双孔表面发射激光
公开(公告)号：US20110228805A1
公开(公告)日：2011-09-22
申请号：US12968727
申请日：2010-12-15
申请人： Günther TRÄNKLE , Joachim PIPREK , Hans WENZEL , Götz ERBERT , Markus WEYERS , Andrea KNIGGE
发明人： Günther TRÄNKLE , Joachim PIPREK , Hans WENZEL , Götz ERBERT , Markus WEYERS , Andrea KNIGGE
IPC分类号： H01S5/183
CPC分类号： H01S5/183 , H01S5/026 , H01S5/041 , H01S5/14 , H01S5/4025 , H01S5/4087
摘要： A the vertical-cavity surface-emitting laser includes a stripe-shaped active medium (10) having an emission maximum at a first wavelength (λ1), wherein a first reflector (18) is arranged below the stripe-shaped active medium (10) and a second reflector (20) is arranged above the stripe-shaped active medium (10), with the first reflector (18) facing the second reflector (20), wherein the first reflector (18) and a second reflector (20) have a reflectivity maximum in the region of the first wavelength (λ1), wherein a third reflector (12) and a fourth reflector (13) are each arranged on a side above or next to the stripe-shaped active medium (10), wherein the third reflector (12) faces the fourth reflector (13), and wherein the third reflector (12) and the fourth reflector (13) have a reflectivity maximum in the region of a second wavelength (λ2), wherein the first wavelength (λ1)) is greater than the second wavelength (λ2).
摘要翻译：垂直腔表面发射激光器包括具有第一波长（λ1）的发射最大值的条形有源介质（10），其中第一反射器（18）布置在条形活性介质（10）的下方，并且第二反射器（20）布置在条形有源介质（10）的上方，第一反射器（18）面向第二反射器（20），其中第一反射器（18）和第二反射器（20）具有在第一波长区域（λ1）的反射率最大值，其中第三反射器（12）和第四反射器（13）分别布置在条状活性介质（10）上方或旁边的一侧，其中，第三反射器（12）面向第四反射器（13），并且其中第三反射器（12）和第四反射器（13）在第二波长（λ2）的区域中具有反射率最大值，其中第一波长（λ1））大于第二波长（λ2）。

8. 发明申请

US20100096727A1 SEMI-CONDUCTOR SUBSTRATE AND METHOD OF MASKING LAYER FOR PRODUCING A FREE-STANDING SEMI-CONDUCTOR SUBSTRATE BY MEANS OF HYDRIDE-GAS PHASE EPITAXY 有权
标题翻译：半导体基板和用于通过氢化气相外延生产自由稳定的半导体基板的掩膜层的方法
公开(公告)号：US20100096727A1
公开(公告)日：2010-04-22
申请号：US11996446
申请日：2006-08-24
申请人： Christian Hennig , Markus Weyers , Eberhard Richter , Guenther Traenkle
发明人： Christian Hennig , Markus Weyers , Eberhard Richter , Guenther Traenkle
IPC分类号： H01L29/12 , H01L21/205 , C30B25/04 , H01L21/78
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02581 , H01L21/02642 , H01L21/02647
摘要： The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the semiconductor substrate self-separates from the starting substrate without further process steps.The process according to the invention for the manufacture of a semiconductor substrate comprises the following process steps: providing a starting substrate, forming a mask layer with a multitude of openings on the starting substrate, growing at least one semiconductor substrate, wherein the mask layer is laterally overgrown by at least one semiconductor material, and subsequent, cooling of starting substrate, mask layer and semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide, and wherein the semiconductor substrate and the starting substrate are caused to separate during the growth of the at least one semiconductor substrate or during cooling, and wherein a semiconductor substrate is obtained free-standing. The mask layer according to the invention for the manufacture of a free-standing semiconductor substrate here consists at least partially of tungsten silicide nitride or tungsten silicide.
摘要翻译：本发明涉及独立式半导体衬底以及用于制造独立式半导体衬底的工艺和掩模层，其中半导体衬底与起始衬底自分离而无需进一步的工艺步骤。根据本发明的用于制造半导体衬底的方法包括以下工艺步骤：提供起始衬底，在起始衬底上形成具有多个开口的掩模层，生长至少一个半导体衬底，其中掩模层是由至少一种半导体材料横向长满，以及随后冷却起始衬底，掩模层和半导体衬底，其中用于形成掩模层的材料至少部分由硅化钨或硅化钨组成，并且其中半导体衬底和使起始衬底在至少一个半导体衬底的生长期间或在冷却期间分离，并且其中独立地获得半导体衬底。本发明的用于制造独立式半导体衬底的掩模层至少部分地由硅化钨或氮化硅构成。

9. 发明授权

US09431557B2 Photodetector for ultraviolet radiation, having a high sensitivity and a low dark current 有权
标题翻译：具有高灵敏度和低暗电流的紫外线辐射检测器
公开(公告)号：US09431557B2
公开(公告)日：2016-08-30
申请号：US14115453
申请日：2012-04-26
申请人： Andrea Knigge , Markus Weyers , Hans-Joachim Wurfl
发明人： Andrea Knigge , Markus Weyers , Hans-Joachim Wurfl
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0224 , H01L31/0304 , H01L31/108 , H01L31/102
CPC分类号： H01L31/035272 , H01L31/0224 , H01L31/022408 , H01L31/022466 , H01L31/03048 , H01L31/035209 , H01L31/035281 , H01L31/102 , H01L31/1085 , Y02E10/544 , Y02P70/521
摘要： The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.
摘要翻译：本发明涉及具有高灵敏度和低暗电流的紫外光检测器。本发明的目的是指定具有高灵敏度和低暗电流的UV光电检测器。根据本发明，第一电极结构的指状物和第二电极结构的指状物具有由第二半导体材料制成的覆盖层，其中覆盖层布置在吸收层上并直接接触区域中的吸收层的手指，并且第一半导体材料和第二半导体材料被设计成使得在手指区域中的吸收层和覆盖层之间的边界层处形成二维电子气（2DEG）。

10. 发明授权

US08003996B2 Light-emitting semiconductor component comprising electroluminescent and photoluminescent layers and associated method of production 有权
标题翻译：包含电致发光层和光致发光层的发光半导体组件和相关的生产方法
公开(公告)号：US08003996B2
公开(公告)日：2011-08-23
申请号：US12517069
申请日：2007-12-12
申请人： Markus Weyers , Martin Zorn
发明人： Markus Weyers , Martin Zorn
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/08 , H01L33/007 , H01L33/10 , H01L33/50 , H01L2933/0041
摘要： The present invention relates to a semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. It is an object of the present invention to specify an optical semiconductor component and an associated production method, said component emitting at least two defined wavelengths with a defined intensity ratio. In this case, the intention is that both the wavelengths and the intensity ratio can be set extremely precisely. The semiconductor component according to the invention has a substrate (8), a first charge carrier barrier layer (7) arranged on the substrate (8), a photoluminescent layer (6) arranged on the first charge carrier barrier layer (7), a second charge carrier barrier layer (5) arranged on the photoluminescent layer (6), and an active electroluminescent layer (4) composed of at least one inorganic semiconductor and arranged on the second charge carrier barrier layer (5), wherein the photoluminescent layer (6) absorbs at least part of the light emitted by the electroluminescent layer (4), and an at least partly transparent contact layer (1) arranged on the active electroluminescent layer (4) is furthermore provided.
摘要翻译：本发明涉及一种半导体元件和相关联的制造方法，所述元件发射具有确定的强度比的至少两个限定的波长。本发明的目的是指定光学半导体部件和相关联的制造方法，所述部件发射具有确定的强度比的至少两个限定的波长。在这种情况下，意图是可以非常精确地设置波长和强度比。根据本发明的半导体部件具有衬底（8），布置在衬底（8）上的第一电荷载流子阻挡层（7），布置在第一电荷载流子阻挡层（7）上的光致发光层（6）布置在光致发光层（6）上的第二电荷载流子阻挡层（5）和由至少一个无机半导体组成并且布置在第二载流子阻挡层（5）上的有源电致发光层（4），其中光致发光层 6）吸收由电致发光层（4）发射的光的至少一部分，并且还提供布置在有源电致发光层（4）上的至少部分透明的接触层（1）。

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