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    • 2. 发明申请
    • SEMI-CONDUCTOR SUBSTRATE AND METHOD OF MASKING LAYER FOR PRODUCING A FREE-STANDING SEMI-CONDUCTOR SUBSTRATE BY MEANS OF HYDRIDE-GAS PHASE EPITAXY
    • 半导体基板和用于通过氢化气相外延生产自由稳定的半导体基板的掩膜层的方法
    • US20100096727A1
    • 2010-04-22
    • US11996446
    • 2006-08-24
    • Christian HennigMarkus WeyersEberhard RichterGuenther Traenkle
    • Christian HennigMarkus WeyersEberhard RichterGuenther Traenkle
    • H01L29/12H01L21/205C30B25/04H01L21/78
    • H01L21/0262H01L21/0237H01L21/02378H01L21/0242H01L21/02458H01L21/02502H01L21/0254H01L21/02581H01L21/02642H01L21/02647
    • The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the semiconductor substrate self-separates from the starting substrate without further process steps.The process according to the invention for the manufacture of a semiconductor substrate comprises the following process steps: providing a starting substrate, forming a mask layer with a multitude of openings on the starting substrate, growing at least one semiconductor substrate, wherein the mask layer is laterally overgrown by at least one semiconductor material, and subsequent, cooling of starting substrate, mask layer and semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide, and wherein the semiconductor substrate and the starting substrate are caused to separate during the growth of the at least one semiconductor substrate or during cooling, and wherein a semiconductor substrate is obtained free-standing. The mask layer according to the invention for the manufacture of a free-standing semiconductor substrate here consists at least partially of tungsten silicide nitride or tungsten silicide.
    • 本发明涉及独立式半导体衬底以及用于制造独立式半导体衬底的工艺和掩模层,其中半导体衬底与起始衬底自分离而无需进一步的工艺步骤。 根据本发明的用于制造半导体衬底的方法包括以下工艺步骤:提供起始衬底,在起始衬底上形成具有多个开口的掩模层,生长至少一个半导体衬底,其中掩模层是 由至少一种半导体材料横向长满,以及随后冷却起始衬底,掩模层和半导体衬底,其中用于形成掩模层的材料至少部分由硅化钨或硅化钨组成,并且其中半导体衬底和 使起始衬底在至少一个半导体衬底的生长期间或在冷却期间分离,并且其中独立地获得半导体衬底。 本发明的用于制造独立式半导体衬底的掩模层至少部分地由硅化钨或氮化硅构成。