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1. 发明申请

US20110031401A1 RADIATION DETECTOR HAVING A BANDGAP ENGINEERED ABSORBER 有权
标题翻译：带有工程吸收剂的辐射探测器
公开(公告)号：US20110031401A1
公开(公告)日：2011-02-10
申请号：US12853174
申请日：2010-08-09
申请人： Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
发明人： Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
IPC分类号： G01J1/16 , H01L31/0296 , H01L31/18
CPC分类号： G01J1/44 , H01L27/1446 , H01L27/14652 , H01L31/02161 , H01L31/0232 , H01L31/024 , H01L31/02966 , H01L31/101 , H01L31/1032 , H01L31/1832
摘要： A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.
摘要翻译：提供一种辐射检测器，其包括具有渐变多层结构的辐射吸收体的光电二极管。吸收体的各层由诸如HgCdTe的半导体材料形成。第一层被形成为具有第一预定波长截止。层中的第二层设置在吸收体的第一层和第一表面之下，辐射被接收在该吸收体的第一表面下方。第二层具有半导体材料的渐变组成结构，使得第二层的波长截止从第二预定波长截止到第一预定波长截止不同，使得第二层比带隙的第一带隙具有逐渐变小的带隙第一层分级多层辐射吸收器结构使得载体能够朝向用于测量由辐射吸收器感测的辐射的导体流动。

2. 发明授权

US5834775A Integral slot shield for infrared focal plane arrays 失效
标题翻译：用于红外焦平面阵列的积分插槽屏蔽
公开(公告)号：US5834775A
公开(公告)日：1998-11-10
申请号：US768254
申请日：1996-12-17
申请人： Mark R. Skokan , John C. Ehmke , Charles A. Franda , Stephen L. Whicker
发明人： Mark R. Skokan , John C. Ehmke , Charles A. Franda , Stephen L. Whicker
IPC分类号： G01J5/08 , H01L27/14 , G01J5/10
CPC分类号： G01J5/02 , G01J5/022 , G01J5/024 , G01J5/08 , G01J5/0853 , G01J5/046
摘要： A method of fabricating a focal plane array and the array having a integral slot shield which comprises fabricating a focal plane array having a plurality of detector elements. A layer of electrically insulating material having a planar top surface is then formed over the array. A reflective layer is then formed over the layer of electrically insulating material and the electrically insulating layer and reflective layer are etched only in the regions thereof over the detector elements to form slots over the detector elements. An absorbing layer is formed over the reflective layer. The absorbing layer is preferably an infrared-transparent dielectric having an optical thickness of about one quarter wavelength of the light frequency of interest with a metallic flash layer thereover having a thickness of from about 50 to about 60 Angstroms. The infrared dielectric is preferably one of zinc sulfide, zinc selenide, polyethylene and paraxylilene.
摘要翻译：一种制造焦平面阵列的方法，该阵列具有整体槽屏蔽，其包括制造具有多个检测器元件的焦平面阵列。然后在阵列上形成具有平坦顶表面的电绝缘材料层。然后在电绝缘材料层上形成反射层，并且电绝缘层和反射层仅在其检测器元件的区域中被蚀刻，以在检测器元件上方形成槽。在反射层上形成吸收层。吸收层优选为红外透明电介质，其光学厚度为感兴趣的光频的约四分之一波长，金属闪光层的厚度为约50至约60埃。红外线电介质优选为硫化锌，硒化锌，聚乙烯和对二甲苯之一。

3. 发明授权

US08772717B2 Radiation detector having a bandgap engineered absorber 有权
标题翻译：具有带隙工程吸收体的辐射检测器
公开(公告)号：US08772717B2
公开(公告)日：2014-07-08
申请号：US12853174
申请日：2010-08-09
申请人： Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
发明人： Pradip Mitra , Jeffrey D. Beck , Mark R. Skokan
IPC分类号： G01J5/00
CPC分类号： G01J1/44 , H01L27/1446 , H01L27/14652 , H01L31/02161 , H01L31/0232 , H01L31/024 , H01L31/02966 , H01L31/101 , H01L31/1032 , H01L31/1832
摘要： A radiation detector is provided that includes a photodiode having a radiation absorber with a graded multilayer structure. Each layer of the absorber is formed from a semiconductor material, such as HgCdTe. A first of the layers is formed to have a first predetermined wavelength cutoff. A second of the layers is disposed over the first layer and beneath the first surface of the absorber through which radiation is received. The second layer has a graded composition structure of the semiconductor material such that the wavelength cutoff of the second layer varies from a second predetermined wavelength cutoff to the first predetermined wavelength cutoff such that the second layer has a progressively smaller bandgap than the first bandgap of the first layer. The graded multilayer radiation absorber structure enables carriers to flow toward a conductor that is used for measuring the radiation being sensed by the radiation absorber.
摘要翻译：提供一种辐射检测器，其包括具有渐变多层结构的辐射吸收体的光电二极管。吸收体的各层由诸如HgCdTe的半导体材料形成。第一层被形成为具有第一预定波长截止。层中的第二层设置在吸收体的第一层和第一表面之下，辐射被接收在该吸收体的第一表面下方。第二层具有半导体材料的渐变组成结构，使得第二层的波长截止从第二预定波长截止到第一预定波长截止不同，使得第二层比带隙的第一带隙具有逐渐变小的带隙第一层分级多层辐射吸收器结构使得载体能够朝向用于测量由辐射吸收器感测的辐射的导体流动。

4. 发明授权

US06596982B1 Reflection suppression in focal plane arrays by use of blazed diffraction grating 失效
$Reflection suppression in focal plane arrays by use of blazed diffraction grating$
标题翻译：通过使用闪耀衍射光栅在焦平面阵列中的反射抑制
公开(公告)号：US06596982B1
公开(公告)日：2003-07-22
申请号：US07988622
申请日：1992-12-09
申请人： Mark R. Skokan , Howard V. Kennedy
发明人： Mark R. Skokan , Howard V. Kennedy
IPC分类号： G02B518
CPC分类号： G02B5/1814 , G02B1/11
摘要： A reflection suppression system for suppressing reflection from scanned infrared focal plane arrays using a system of two or more blazed diffraction gratings in the path of radiations to the array.
摘要翻译：一种反射抑制系统，用于使用在阵列的辐射路径中的两个或多个闪耀衍射光栅的系统来抑制来自扫描的红外焦平面阵列的反射。

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