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1. 发明授权

US5834775A Integral slot shield for infrared focal plane arrays 失效
标题翻译：用于红外焦平面阵列的积分插槽屏蔽
公开(公告)号：US5834775A
公开(公告)日：1998-11-10
申请号：US768254
申请日：1996-12-17
申请人： Mark R. Skokan , John C. Ehmke , Charles A. Franda , Stephen L. Whicker
发明人： Mark R. Skokan , John C. Ehmke , Charles A. Franda , Stephen L. Whicker
IPC分类号： G01J5/08 , H01L27/14 , G01J5/10
CPC分类号： G01J5/02 , G01J5/022 , G01J5/024 , G01J5/08 , G01J5/0853 , G01J5/046
摘要： A method of fabricating a focal plane array and the array having a integral slot shield which comprises fabricating a focal plane array having a plurality of detector elements. A layer of electrically insulating material having a planar top surface is then formed over the array. A reflective layer is then formed over the layer of electrically insulating material and the electrically insulating layer and reflective layer are etched only in the regions thereof over the detector elements to form slots over the detector elements. An absorbing layer is formed over the reflective layer. The absorbing layer is preferably an infrared-transparent dielectric having an optical thickness of about one quarter wavelength of the light frequency of interest with a metallic flash layer thereover having a thickness of from about 50 to about 60 Angstroms. The infrared dielectric is preferably one of zinc sulfide, zinc selenide, polyethylene and paraxylilene.
摘要翻译：一种制造焦平面阵列的方法，该阵列具有整体槽屏蔽，其包括制造具有多个检测器元件的焦平面阵列。然后在阵列上形成具有平坦顶表面的电绝缘材料层。然后在电绝缘材料层上形成反射层，并且电绝缘层和反射层仅在其检测器元件的区域中被蚀刻，以在检测器元件上方形成槽。在反射层上形成吸收层。吸收层优选为红外透明电介质，其光学厚度为感兴趣的光频的约四分之一波长，金属闪光层的厚度为约50至约60埃。红外线电介质优选为硫化锌，硒化锌，聚乙烯和对二甲苯之一。

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