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    • 5. 发明授权
    • Method and apparatus for increasing bandwidth of a stripline to slotline transition
    • 用于增加带状线到槽线转换带宽的方法和装置
    • US06501431B1
    • 2002-12-31
    • US09946848
    • 2001-09-04
    • James McGlathery Irion, IIR. Thomas DoverRichard E. HodgesAllan R. LoganJohn C. Ehmke
    • James McGlathery Irion, IIR. Thomas DoverRichard E. HodgesAllan R. LoganJohn C. Ehmke
    • H01Q1308
    • H01Q13/08
    • An antenna element (10) has two dielectric layers (12, 13), which separate three ground planes (17, 18, 21, 22, 23). The three ground planes have respective slots (26, 27, 28), which collectively define a slotline communicating at an inner end with a balun hole (57) that extends through all of the ground planes and dielectric layers. Two capacitive switches (121) are supported within the balun hole, and each have terminals respectively coupled to the same ground plane on opposite sides of the balun hole. The capacitive switches are independently and selectively operated to dynamically vary the impedance characteristic of the overall balun structure that includes the balun hole and two switch assemblies, and which gives the antenna element good electrical performance over a wide bandwidth. The antenna element includes a stripline (36), and a stripline to a slotline transition exists at the end of the slotline adjacent the balun hole.
    • 天线元件(10)具有分离三个接地平面(17,18,21,22,23)的两个电介质层(12,13)。 三个接地平面具有相应的槽(26,27,28),它们共同地限定了在内端连通的槽线,其中平衡 - 不平衡转换器(57)延伸穿过所有接地平面和电介质层。 两个电容式开关(121)支撑在平衡 - 不平衡转换器孔内,并且每个具有分别耦合到平衡 - 不平衡转换孔的相对侧上相同接地平面的端子。 电容式开关被独立地选择性地操作以动态地改变包括平衡 - 不平衡变压器孔和两个开关组件的整个平衡 - 不平衡变换器结构的阻抗特性,并且在宽带宽上给出天线元件良好的电性能。 天线元件包括带状线(36),并且在与平动不平衡变换器孔相邻的槽线的端部存在带状线到槽线转变。
    • 8. 发明授权
    • Self-aligned bump bond infrared focal plane array architecture
    • 自对准凸点键红外焦平面阵列架构
    • US06359290B1
    • 2002-03-19
    • US08595901
    • 1996-02-06
    • John C. Ehmke
    • John C. Ehmke
    • H01L300
    • H01L24/32H01L21/6835H01L24/82H01L24/90H01L27/1465H01L2221/68354H01L2224/13019H01L2224/24051H01L2224/24998H01L2224/81192H01L2224/82007H01L2924/01005H01L2924/01006H01L2924/01019H01L2924/01033H01L2924/01042H01L2924/0105H01L2924/01074H01L2924/01079H01L2924/14
    • A method of making a diode and the diode wherein there is provided a substrate of p-type group II-VI semiconductor material and an electrically conductive material capable of forming an ohmic contact with the substrate is forced into the lattice of the substrate to create an n-type region in the substrate in contact with the material and forming an electrical contact to the p-type region of said substrate. The substrate is preferably HgCdTe and the electrically conductive material is preferably tungsten or tin coated tungsten or tungsten coated with a mercury amalgam. Also a method of making an infrared focal plane array and the array wherein there is provided a semiconductor integrated circuit having electrically conductive pads on a surface thereof, forming bumps of an electrically conductive material on predetermined ones of the pads, providing a substrate of p-type group II-VI semiconductor material, disposing a layer of bonding material over one of the surface of the integrated circuit containing the pads or a surface of the substrate, forcing the bumps into the lattice of the substrate to create an n-type region in the substrate in contact with the material, bonding the substrate to the integrated circuit and forming an electrical connection between the p-type region of the substrate and one of the pads. The process is otherwise the same as the diode fabrication.
    • 制备二极管和二极管的方法,其中提供了p型II-VI族半导体材料的衬底和能够与衬底形成欧姆接触的导电材料,被迫进入衬底的晶格,以形成 所述衬底中的所述n型区域与所述材料接触并形成与所述衬底的p型区域的电接触。 基底优选为HgCdTe,并且导电材料优选为涂覆有汞齐汞的钨或锡涂覆的钨或钨。 还有一种制造红外焦平面阵列的方法,其中提供了一种在其表面上具有导电焊盘的半导体集成电路,在预定焊盘上形成导电材料的凸块,提供p- 型II-VI族半导体材料,在包含焊盘或基板的表面的集成电路的表面之一上设置接合材料层,迫使凸块进入基板的晶格以形成n型区域 所述基板与所述材料接触,将所述基板接合到所述集成电路并且在所述基板的所述p型区域和所述焊盘中的一个之间形成电连接。 该过程在另外与二极管制造相同。
    • 9. 发明授权
    • Infrared focal plane array with integral slot shield using spin-on epoxy
and method of making same
    • 红外焦平面阵列,采用旋涂环氧树脂整体槽屏蔽及其制作方法
    • US5298733A
    • 1994-03-29
    • US988513
    • 1992-12-10
    • John C. EhmkeJames C. Baker
    • John C. EhmkeJames C. Baker
    • G01J1/02H01L27/146H01L31/0232H01L31/16H01J40/14
    • H01L27/146
    • A method of fabricating a focal plane array having an integral slot shield which comprises fabricating a focal plane array having a plurality of detector elements. A layer of electrically insulating material, preferably a spun on epoxy, having a planar top surface is then formed over the array. A reflective layer is then formed over the layer of electrically insulating material and the electrically insulating layer and reflective layer are etched only in the regions thereof over the detector elements to form slots over said detector elements. The electrically insulating layer is etched with a directional etchant. The etched layer of electrically insulating material defines side walls in the slots, material from the side walls being removed to define non-planar sidewalls. The non-planar side walls preferably have an essentially sawtooth shape.
    • 一种制造具有整体槽屏蔽的焦平面阵列的方法,其包括制造具有多个检测器元件的焦平面阵列。 然后在阵列上形成一层电绝缘材料,优选具有平面顶表面的旋涂环氧树脂。 然后在电绝缘材料层上形成反射层,并且电绝缘层和反射层仅在其检测器元件的区域中被蚀刻,以在所述检测器元件上形成狭缝。 用定向蚀刻剂蚀刻电绝缘层。 电绝缘材料的蚀刻层限定槽中的侧壁,去除来自侧壁的材料以限定非平面侧壁。 非平面侧壁优选地具有基本上锯齿形状。