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1. 发明申请

US20120280234A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120280234A1
公开(公告)日：2012-11-08
申请号：US13448611
申请日：2012-04-17
申请人： Junichi KOEZUKA , Naoto YAMADE , Kyoko YOSHIOKA , Yuhei SATO , Mari TERASHIMA
发明人： Junichi KOEZUKA , Naoto YAMADE , Kyoko YOSHIOKA , Yuhei SATO , Mari TERASHIMA
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
摘要翻译：提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域，以及设置在所述非晶氧化物半导体层上的氧化铝膜。无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理在低于或等于450℃的温度下

2. 发明申请

US20110193081A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110193081A1
公开(公告)日：2011-08-11
申请号：US13018879
申请日：2011-02-01
申请人： Hiromichi GODO , Yasuyuki ARAI , Satohiro OKAMOTO , Mari TERASHIMA , Eriko NISHIDA , Junpei SUGAO
发明人： Hiromichi GODO , Yasuyuki ARAI , Satohiro OKAMOTO , Mari TERASHIMA , Eriko NISHIDA , Junpei SUGAO
IPC分类号： H01L29/78
CPC分类号： H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及绝缘层设置成与氧化物半导体层接触。氧化物半导体层的侧表面与源电极或漏电极接触。氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

3. 发明授权

US08378343B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08378343B2
公开(公告)日：2013-02-19
申请号：US12835119
申请日：2010-07-13
申请人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Mari Terashima
发明人： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Mari Terashima
IPC分类号： H01L29/10
CPC分类号： H01L27/124 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225
摘要： A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.
摘要翻译：提供一种半导体器件，其中在一个衬底上设置每个包括薄膜晶体管的像素部分和驱动器电路; 像素部分中的薄膜晶体管包括栅极电极层，栅极绝缘层，具有小厚度的端部区域的氧化物半导体层，与氧化物半导体层的一部分接触的氧化物绝缘层，源极和漏极层和像素电极层; 像素部分中的薄膜晶体管具有透光性; 并且使用具有比像素部分中的源极和漏极电极层的材料更低的电阻的导电材料形成驱动电路部分中的薄膜晶体管的源极和漏极电极层。

4. 发明申请

US20110012106A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110012106A1
公开(公告)日：2011-01-20
申请号：US12835119
申请日：2010-07-13
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Mari TERASHIMA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Mari TERASHIMA
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/124 , G02F1/13454 , G02F2201/40 , G02F2202/10 , H01L27/1225
摘要： A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.
摘要翻译：提供一种半导体器件，其中在一个衬底上设置每个包括薄膜晶体管的像素部分和驱动器电路; 像素部分中的薄膜晶体管包括栅极电极层，栅极绝缘层，具有小厚度的端部区域的氧化物半导体层，与氧化物半导体层的一部分接触的氧化物绝缘层，源极和漏极层和像素电极层; 像素部分中的薄膜晶体管具有透光性; 并且使用具有比像素部分中的源极和漏极电极层的材料更低的电阻的导电材料形成驱动电路部分中的薄膜晶体管的源极和漏极电极层。

5. 发明授权

US08709922B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08709922B2
公开(公告)日：2014-04-29
申请号：US13448611
申请日：2012-04-17
申请人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
发明人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
摘要翻译：提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域和设置在所述非晶氧化物半导体层上的氧化铝膜。无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理在低于或等于450℃的温度下

6. 发明授权

US08546811B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08546811B2
公开(公告)日：2013-10-01
申请号：US13018879
申请日：2011-02-01
申请人： Hiromichi Godo , Yasuyuki Arai , Satohiro Okamoto , Mari Terashima , Eriko Nishida , Junpei Sugao
发明人： Hiromichi Godo , Yasuyuki Arai , Satohiro Okamoto , Mari Terashima , Eriko Nishida , Junpei Sugao
IPC分类号： H01L27/14
CPC分类号： H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及绝缘层设置成与氧化物半导体层接触。氧化物半导体层的侧表面与源电极或漏电极接触。氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

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