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1. 发明授权

US08772627B2 Photoelectric conversion device and manufacturing method thereof 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US08772627B2
公开(公告)日：2014-07-08
申请号：US12848357
申请日：2010-08-02
申请人： Shunpei Yamazaki , Yasuyuki Arai , Satohiro Okamoto
发明人： Shunpei Yamazaki , Yasuyuki Arai , Satohiro Okamoto
IPC分类号： H01L31/00 , H01L31/0352 , H01L31/0368
CPC分类号： H01L31/035209 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , Y02E10/545 , Y02E10/546 , Y02E10/548
摘要： To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.
摘要翻译：提供其特性得到充分改善的光电转换装置。光电转换装置包括：第一电极; 具有表现出第一导电类型的半导体层的单元电池，具有光电转换效果的半导体层和表现出第二导电类型的半导体层; 和第二电极。在具有光电转换效果的半导体层中，其粒径小于具有光电转换效果的半导体层的厚度的晶粒在具有光电转换效果的半导体层的厚度方向上排列对具有第二导电类型的半导体层表现出第一导电类型的半导体层。

2. 发明授权

US08546811B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08546811B2
公开(公告)日：2013-10-01
申请号：US13018879
申请日：2011-02-01
申请人： Hiromichi Godo , Yasuyuki Arai , Satohiro Okamoto , Mari Terashima , Eriko Nishida , Junpei Sugao
发明人： Hiromichi Godo , Yasuyuki Arai , Satohiro Okamoto , Mari Terashima , Eriko Nishida , Junpei Sugao
IPC分类号： H01L27/14
CPC分类号： H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及绝缘层设置成与氧化物半导体层接触。氧化物半导体层的侧表面与源电极或漏电极接触。氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

3. 发明申请

US20110063340A1 DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：显示装置及其驱动方法
公开(公告)号：US20110063340A1
公开(公告)日：2011-03-17
申请号：US12877689
申请日：2010-09-08
申请人： Atsushi UMEZAKI , Satohiro Okamoto
发明人： Atsushi UMEZAKI , Satohiro Okamoto
IPC分类号： G09G5/10
CPC分类号： G09G3/344 , G09G2310/061
摘要： A new driving method of a display device that makes it possible to reduce power consumption and to improve display quality is proposed. A first gray scale is displayed in all pixels in a first initialization period, a second gray scale is displayed in all the pixels in a second initialization period, an objective image is displayed in a writing period, and the image is held in a holding period. Alternatively, an electrical history of a gray scale storage display element for displaying a number of gray scales is erased in the first initialization period and the second initialization period. Alternatively, a potential of a common electrode is changed in the first initialization period, the second initialization period, the writing period, and the holding period. Alternatively, a potential of a capacitor wiring is changed in synchronization with the potential of the common electrode.
摘要翻译：提出了一种能够降低功耗并提高显示质量的显示装置的新的驱动方法。在第一初始化期间，在所有像素中显示第一灰度级，在第二初始化期间，在全部像素中显示第二灰阶，在写入期间显示目标图像，并且将图像保持在保持期间。或者，在第一初始化期间和第二初始化期间，擦除用于显示多个灰度级的灰度级存储显示元件的电历史。或者，在第一初始化期间，第二初始化期间，写入期间和保持期间，改变公共电极的电位。或者，与公共电极的电位同步地改变电容器配线的电位。

4. 发明授权

US07816232B2 Method for manufacturing semiconductor substrate and semiconductor substrate manufacturing apparatus 有权
标题翻译：半导体衬底和半导体衬底制造装置的制造方法
公开(公告)号：US07816232B2
公开(公告)日：2010-10-19
申请号：US12275809
申请日：2008-11-21
申请人： Akihisa Shimomura , Masaki Koyama , Satohiro Okamoto
发明人： Akihisa Shimomura , Masaki Koyama , Satohiro Okamoto
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的一定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

5. 发明申请

US20110030901A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 审中-公开
标题翻译：制造半导体基板和半导体基板制造装置的方法
公开(公告)号：US20110030901A1
公开(公告)日：2011-02-10
申请号：US12903527
申请日：2010-10-13
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
IPC分类号： B32B37/10
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的特定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

6. 发明授权

US08404525B2 Semiconductor device, manufacturing method of semiconductor device, and RFID tag 有权
标题翻译：半导体器件，半导体器件的制造方法和RFID标签
公开(公告)号：US08404525B2
公开(公告)日：2013-03-26
申请号：US13115432
申请日：2011-05-25
申请人： Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
发明人： Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
IPC分类号： H01L21/00
CPC分类号： H01L25/50 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/83 , H01L24/95 , H01L25/18 , H01L2223/6677 , H01L2224/24011 , H01L2224/2402 , H01L2224/24137 , H01L2224/24227 , H01L2224/2929 , H01L2224/29344 , H01L2224/29355 , H01L2224/76155 , H01L2224/82102 , H01L2224/83851 , H01L2224/95085 , H01L2224/95122 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/10329 , H01L2924/12032 , H01L2924/12043 , H01L2924/12044 , H01L2924/14 , H01L2924/15153 , H01L2924/15155 , H01L2924/15156 , H01L2924/15165 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3011 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof. A structure, which has a base including a plurality of depressions having different shapes or sizes, and a plurality of IC chips which are disposed in the depressions and which fit the depressions, is formed. A semiconductor device which selectively includes a function in accordance with an application, by using the base including the plurality of depressions and the IC chips which fit the depressions, can be manufactured at low cost.
摘要翻译：本发明提供一种以低成本形成并且具有很大通用性的半导体器件及其制造方法，以及具有提高的产率的半导体器件及其制造方法。形成具有包括具有不同形状或尺寸的多个凹部的基部和设置在凹部中并且与凹陷配合的多个IC芯片的结构。可以以低成本制造选择性地包括根据应用的功能的半导体器件，通过使用包括多个凹陷的基座和与凹陷配合的IC芯片。

7. 发明授权

US08319725B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08319725B2
公开(公告)日：2012-11-27
申请号：US12769298
申请日：2010-04-28
申请人： Satohiro Okamoto , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
发明人： Satohiro Okamoto , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
IPC分类号： G09G3/34
CPC分类号： H05K1/189 , G02F1/133305 , G02F1/13452 , G02F1/167 , G06F3/0412 , G06F2203/04102 , G09G3/2096 , G09G3/3208 , G09G3/36 , G09G3/3611 , G09G5/003 , G09G5/39 , G09G2300/0421 , G09G2300/0478 , H01L27/1218 , H01L27/1225 , H05K2201/10128
摘要： The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.
摘要翻译：显示装置包括：柔性显示面板，包括显示部分，扫描线和信号线彼此交叉; 用于支撑柔性显示面板的端部的支撑部分; 信号线驱动器电路，用于向信号线输出信号，该信号线被提供给支撑部分; 以及扫描线驱动器电路，用于向垂直于或基本上垂直于支撑部分的方向向显示面板的柔性表面设置的扫描线输出信号。

8. 发明申请

US20110032223A1 Display Panel and Electronic Book 有权
标题翻译：显示面板和电子书
公开(公告)号：US20110032223A1
公开(公告)日：2011-02-10
申请号：US12849951
申请日：2010-08-04
申请人： Satohiro Okamoto , Takafumi Mizoguchi
发明人： Satohiro Okamoto , Takafumi Mizoguchi
IPC分类号： G09G5/00
CPC分类号： H01L27/1251 , G02F1/133305 , G02F1/133308 , G02F1/1336 , G02F1/13452 , G02F1/136204 , G02F1/167 , G02F2001/133311 , G02F2001/133322 , G02F2001/133342 , G02F2001/133357 , G02F2001/133388 , G02F2001/13613 , G02F2001/136295 , G02F2001/13685 , G02F2201/44 , G02F2201/48 , G02F2201/50 , G02F2201/503 , G02F2201/54 , G09G2380/02 , H01L27/1266 , H01L27/3244 , H01L51/5237 , H01L51/525 , H01L51/5256 , H01L2227/326 , H01L2251/5338
摘要： It is an object to provide a display panel and an electronic book which are manufactured with high yield and have high reliability. A display panel is provided which includes, a flexible display portion in which a scan line and a signal line intersect with each other over a substrate, a signal line driver circuit for outputting a first signal to the signal line adjacent to a first side of the flexible display portion over the substrate, and a scan line driver circuit for outputting a second signal to the scan line adjacent to a second side of the flexible display portion. In the display panel, the mechanical strength of a portion provided with the signal line driver circuit or the scan line driver circuit is improved as compared to the mechanical strength of other than the portion.
摘要翻译：本发明的目的是提供一种以高产量制造并具有高可靠性的显示面板和电子书。提供了一种显示面板，包括：扫描线和信号线在基板上彼此相交的柔性显示部分;信号线驱动电路，用于将第一信号输出到与第一侧相邻的信号线; 以及用于将第二信号输出到与柔性显示部分的第二侧相邻的扫描线的扫描线驱动电路。在显示面板中，与除该部分以外的机械强度相比，提供有信号线驱动电路或扫描线驱动电路的部分的机械强度得到改善。

9. 发明授权

US07633089B2 Liquid crystal display device and electronic device provided with the same 有权
标题翻译：液晶显示装置及具备该液晶显示装置的电子装置
公开(公告)号：US07633089B2
公开(公告)日：2009-12-15
申请号：US12219014
申请日：2008-07-15
申请人： Atsushi Miyaguchi , Satohiro Okamoto
发明人： Atsushi Miyaguchi , Satohiro Okamoto
IPC分类号： H01L29/04
CPC分类号： G02F1/13624 , G02F1/134363 , G02F1/1368 , G02F2001/134318 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： A liquid crystal display device provided with a thin film transistor with excellent electrical characteristics and reduced off current, for which increase in manufacturing costs can be suppressed while suppressing reduction in yield. A thin film transistor includes a gate electrode provided over a substrate; a gate insulating film provided to cover the substrate and the gate electrode; a first island-shaped semiconductor layer and a second island-shaped semiconductor layer each formed as a stack of a microcrystalline semiconductor layer and a buffer layer with a depression on an upper surface thereof, over the gate electrode with the gate insulating film interposed therebetween; a conductive semiconductor layer; and a conductive layer provided on the conductive semiconductor layer. The conductive semiconductor layer is provided between the first island-shaped semiconductor layer and the second island-shaped semiconductor layer in contact with the gate insulating film.
摘要翻译：具有薄膜晶体管的液晶显示装置，其具有优异的电特性和减小的截止电流，从而可以抑制成品率的降低，从而可以抑制制造成本的增加。薄膜晶体管包括设置在衬底上的栅电极; 设置为覆盖基板和栅电极的栅极绝缘膜; 第一岛状半导体层和第二岛状半导体层，其各自形成为微晶半导体层的堆叠和在其上表面上具有凹陷的缓冲层，栅极电极之间插入栅极绝缘膜; 导电半导体层; 以及设置在导电半导体层上的导电层。导电半导体层设置在与栅极绝缘膜接触的第一岛状半导体层和第二岛状半导体层之间。

10. 发明申请

US20070158804A1 Semiconductor device, manufacturing method of semiconductor device, and RFID tag 审中-公开
标题翻译：半导体器件，半导体器件的制造方法和RFID标签
公开(公告)号：US20070158804A1
公开(公告)日：2007-07-12
申请号：US11650731
申请日：2007-01-08
申请人： Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
发明人： Kunio Hosoya , Saishi Fujikawa , Satohiro Okamoto
IPC分类号： H01L23/06
CPC分类号： H01L25/50 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/83 , H01L24/95 , H01L25/18 , H01L2223/6677 , H01L2224/24011 , H01L2224/2402 , H01L2224/24137 , H01L2224/24227 , H01L2224/2929 , H01L2224/29344 , H01L2224/29355 , H01L2224/76155 , H01L2224/82102 , H01L2224/83851 , H01L2224/95085 , H01L2224/95122 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/10329 , H01L2924/12032 , H01L2924/12043 , H01L2924/12044 , H01L2924/14 , H01L2924/15153 , H01L2924/15155 , H01L2924/15156 , H01L2924/15165 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3011 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The present invention provides a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof. A structure, which has a base including a plurality of depressions having different shapes or sizes, and a plurality of IC chips which are disposed in the depressions and which fit the depressions, is formed. A semiconductor device which selectively includes a function in accordance with an application, by using the base including the plurality of depressions and the IC chips which fit the depressions, can be manufactured at low cost.
摘要翻译：本发明提供一种以低成本形成并且具有很大通用性的半导体器件及其制造方法，以及具有提高的产率的半导体器件及其制造方法。形成具有包括具有不同形状或尺寸的多个凹部的基部和设置在凹部中并且与凹陷配合的多个IC芯片的结构。可以以低成本制造选择性地包括根据应用的功能的半导体器件，通过使用包括多个凹陷的基座和与凹陷配合的IC芯片。

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