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1. 发明授权

US08546811B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08546811B2
公开(公告)日：2013-10-01
申请号：US13018879
申请日：2011-02-01
申请人： Hiromichi Godo , Yasuyuki Arai , Satohiro Okamoto , Mari Terashima , Eriko Nishida , Junpei Sugao
发明人： Hiromichi Godo , Yasuyuki Arai , Satohiro Okamoto , Mari Terashima , Eriko Nishida , Junpei Sugao
IPC分类号： H01L27/14
CPC分类号： H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及绝缘层设置成与氧化物半导体层接触。氧化物半导体层的侧表面与源电极或漏电极接触。氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

2. 发明授权

US08946051B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US08946051B2
公开(公告)日：2015-02-03
申请号：US12410669
申请日：2009-03-25
申请人： Shunpei Yamazaki , Eriko Nishida
发明人： Shunpei Yamazaki , Eriko Nishida
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762 , H01L21/02 , H01L21/316
CPC分类号： H01L21/76254 , H01L21/02057 , H01L21/02131 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： It is an object to provide a method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even when a single crystal semiconductor substrate in which crystal defects exist is used. Such an SOI substrate can be manufactured through the steps of forming a single crystal semiconductor layer which has an extremely small number of defects over a single crystal semiconductor substrate by an epitaxial growth method; forming an oxide film on the single crystal semiconductor substrate by thermal oxidation treatment; introducing ions into the single crystal semiconductor substrate through the oxide film; bonding the single crystal semiconductor substrate into which the ions are introduced and a semiconductor substrate to each other; causing separation by heat treatment; and performing planarization treatment on the single crystal semiconductor layer provided over the semiconductor substrate.
摘要翻译：本发明的目的是提供一种SOI衬底的制造方法，即使使用存在晶体缺陷的单晶半导体衬底，单晶半导体层的晶体缺陷也被降低。可以通过外延生长法在单晶半导体衬底上形成具有极少数缺陷的单晶半导体层的步骤来制造这种SOI衬底; 通过热氧化处理在单晶半导体衬底上形成氧化膜; 通过氧化膜将离子引入单晶半导体衬底; 将引入离子的单晶半导体衬底和半导体衬底彼此接合; 引起热处理分离; 对设置在半导体基板上的单晶半导体层进行平坦化处理。

3. 发明授权

US09633892B2 Method for manufacturing SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced and method for manufacturing semiconductor device 有权
公开(公告)号：US09633892B2
公开(公告)日：2017-04-25
申请号：US12410643
申请日：2009-03-25
申请人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
发明人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even if a single crystal semiconductor substrate including crystal defects is used. A first oxide film is formed on a single crystal semiconductor substrate; the first oxide film is removed; a surface of the single crystal semiconductor substrate from which the first oxide film is removed is irradiated with laser light; a second oxide film is formed on the single crystal semiconductor substrate; an embrittled region is formed in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the second oxide film; bonding the second oxide film and the semiconductor substrate so as to face each other; and the single crystal semiconductor substrate is separated at the embrittled region by heat treatment to obtain a single crystal semiconductor layer bonded to the semiconductor substrate.

4. 发明授权

US08912541B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08912541B2
公开(公告)日：2014-12-16
申请号：US12848397
申请日：2010-08-02
申请人： Shunpei Yamazaki , Junichiro Sakata , Miyuki Hosoba , Eriko Nishida
发明人： Shunpei Yamazaki , Junichiro Sakata , Miyuki Hosoba , Eriko Nishida
IPC分类号： H01L29/12 , H01L27/12 , H01L29/45
CPC分类号： H01L29/45 , H01L27/1214 , H01L27/1225 , H01L27/124
摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.
摘要翻译：本发明的一个目的是增加半导体器件的开口率。像素部分和驱动电路设置在一个基板上。像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。像素部分具有透光性。此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。

5. 发明授权

US08530332B2 Method for manufacturing SOI substrate and semiconductor device 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US08530332B2
公开(公告)日：2013-09-10
申请号：US12410649
申请日：2009-03-25
申请人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
发明人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/84 , H01L29/458 , H01L29/66772 , H01L29/78621
摘要： An object is to provide an SOI substrate with excellent characteristics even in the case where a single crystal semiconductor substrate having crystal defects is used. Another object is to provide a semiconductor device using such an SOI substrate. A single crystal semiconductor layer is formed by an epitaxial growth method over a surface of a single crystal semiconductor substrate. The single crystal semiconductor layer is subjected to first thermal oxidation treatment to form a first oxide film. A surface of the first oxide film is irradiated with ions, whereby the ions are introduced to the single crystal semiconductor layer. The single crystal semiconductor layer and a base substrate are bonded with the first oxide film interposed therebetween. The single crystal semiconductor layer is divided at a region where the ions are introduced by performing thermal treatment, so that the single crystal semiconductor layer is partly left over the base substrate. The single crystal semiconductor layer left over the base substrate is irradiated with laser light. The single crystal semiconductor layer left over the base substrate is subjected to second thermal oxidation treatment to form a second oxide film. Then, the second oxide film is removed.
摘要翻译：目的是提供具有优异特性的SOI衬底，即使在使用具有晶体缺陷的单晶半导体衬底的情况下也是如此。另一个目的是提供一种使用这种SOI衬底的半导体器件。通过外延生长法在单晶半导体衬底的表面上形成单晶半导体层。对单晶半导体层进行第一热氧化处理以形成第一氧化物膜。用离子照射第一氧化膜的表面，由此将离子引入单晶半导体层。单晶半导体层和基底基板与第一氧化膜接合。通过进行热处理，将单晶半导体层分割在引入离子的区域，使得单晶半导体层部分残留在基底基板上。用激光照射留在基底基板上的单晶半导体层。离开基底基板的单晶半导体层进行第二次热氧化处理，形成第二氧化膜。然后，除去第二氧化膜。

6. 发明授权

US08021958B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US08021958B2
公开(公告)日：2011-09-20
申请号：US12410654
申请日：2009-03-25
申请人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
发明人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
IPC分类号： H01L21/78
CPC分类号： H01L21/76254
摘要： A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced is provided. An oxide film containing halogen is formed on each of surfaces of a single crystal semiconductor substrate and of a semiconductor substrate provided with a single crystal semiconductor layer separated from the single crystal semiconductor substrate, whereby impurities that exist on the surfaces of and inside the substrates are decreased. In addition, the single crystal semiconductor layer provided over the semiconductor substrate is irradiated with a laser beam, whereby crystallinity of the single crystal semiconductor layer is improved and planarity is improved.
摘要翻译：提供了制造其中单晶半导体层的晶体缺陷减小的SOI衬底的方法。在单晶半导体基板的表面和设置有与单晶半导体基板分离的单晶半导体层的半导体基板的各表面上形成含有卤素的氧化物膜，由此存在于基板的表面和内部的杂质为减少。此外，用半导体衬底上的单晶半导体层照射激光束，从而提高单晶半导体层的结晶度，提高平面度。

7. 发明申请

US20090261449A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20090261449A1
公开(公告)日：2009-10-22
申请号：US12410649
申请日：2009-03-25
申请人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
发明人： Shunpei Yamazaki , Eriko Nishida , Takashi Shimazu
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/84 , H01L29/458 , H01L29/66772 , H01L29/78621
摘要： An object is to provide an SOI substrate with excellent characteristics even in the case where a single crystal semiconductor substrate having crystal defects is used. Another object is to provide a semiconductor device using such an SOI substrate. A single crystal semiconductor layer is formed by an epitaxial growth method over a surface of a single crystal semiconductor substrate. The single crystal semiconductor layer is subjected to first thermal oxidation treatment to form a first oxide film. A surface of the first oxide film is irradiated with ions, whereby the ions are introduced to the single crystal semiconductor layer. The single crystal semiconductor layer and a base substrate are bonded with the first oxide film interposed therebetween. The single crystal semiconductor layer is divided at a region where the ions are introduced by performing thermal treatment, so that the single crystal semiconductor layer is partly left over the base substrate. The single crystal semiconductor layer left over the base substrate is irradiated with laser light. The single crystal semiconductor layer left over the base substrate is subjected to second thermal oxidation treatment to form a second oxide film. Then, the second oxide film is removed.
摘要翻译：目的是提供具有优异特性的SOI衬底，即使在使用具有晶体缺陷的单晶半导体衬底的情况下也是如此。另一个目的是提供一种使用这种SOI衬底的半导体器件。通过外延生长法在单晶半导体衬底的表面上形成单晶半导体层。对单晶半导体层进行第一热氧化处理以形成第一氧化物膜。用离子照射第一氧化膜的表面，由此将离子引入单晶半导体层。单晶半导体层和基底基板与第一氧化膜接合。通过进行热处理，将单晶半导体层分割在引入离子的区域，使得单晶半导体层部分残留在基底基板上。用激光照射留在基底基板上的单晶半导体层。留在基底基板上的单晶半导体层进行第二次热氧化处理，形成第二氧化膜。然后，除去第二氧化膜。

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