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    • 3. 发明申请
    • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING THRESHOLD VALUE IN NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    • 非易失性半导体存储器件的非线性半导体存储器件和控制非线性半导体存储器件中的阈值的方法
    • US20090129157A1
    • 2009-05-21
    • US12273845
    • 2008-11-19
    • Yasuhiko HONDARyu HondaiManabu Satoh
    • Yasuhiko HONDARyu HondaiManabu Satoh
    • G11C16/00G11C16/06G11C7/00
    • G11C11/5628G11C16/0483G11C16/3418G11C2211/5621
    • A method for controlling a threshold value in a nonvolatile semiconductor memory device, includes: performing writing at least once on at least one of the memory cells to be adjusted to a state other than an erased state with an applied voltage that does not cause excess writing, with verify reading being not performed; and performing verify reading by applying a verify voltage corresponding to a target threshold value of the memory cell after the writing is performed on the at least one of the memory cells to be adjusted to the state other than the erased state, and, when the threshold value of the memory cell is determined to be lower than the target threshold value, repeating the writing with the applied voltage that does not cause excess writing and the verify reading until the threshold value of the memory cell becomes equal to or higher than the target threshold value.
    • 一种用于控制非易失性半导体存储器件中的阈值的方法,包括:至少一个存储器单元执行至少一次的写入,以将其调整到不是擦除状态的状态,其中所施加的电压不会导致过多的写入 ,不执行验证读取; 以及在对所述至少一个所述存储器单元执行写入之后,通过应用与所述存储单元的目标阈值对应的验证电压来执行验证读取,以将所述至少一个所述存储器单元调整到除了所述擦除状态之外的状态,以及当所述阈值 存储单元的值被确定为低于目标阈值,重复以不引起过量写入的施加电压和验证读取的写入,直到存储单元的阈值变为等于或高于目标阈值 值。
    • 10. 发明授权
    • Method for controlling threshold value in nonvolatile semiconductor memory device
    • 用于控制非易失性半导体存储器件中的阈值的方法
    • US08565019B2
    • 2013-10-22
    • US12273845
    • 2008-11-19
    • Yasuhiko HondaRyu HondaiManabu Satoh
    • Yasuhiko HondaRyu HondaiManabu Satoh
    • G11C11/34G11C16/04
    • G11C11/5628G11C16/0483G11C16/3418G11C2211/5621
    • A method for controlling a threshold value in a nonvolatile semiconductor memory device, includes: performing writing at least once on at least one of the memory cells to be adjusted to a state other than an erased state with an applied voltage that does not cause excess writing, with verify reading being not performed; and performing verify reading by applying a verify voltage corresponding to a target threshold value of the memory cell after the writing is performed on the at least one of the memory cells to be adjusted to the state other than the erased state, and, when the threshold value of the memory cell is determined to be lower than the target threshold value, repeating the writing with the applied voltage that does not cause excess writing and the verify reading until the threshold value of the memory cell becomes equal to or higher than the target threshold value.
    • 一种用于控制非易失性半导体存储器件中的阈值的方法,包括:至少一个存储器单元执行至少一次的写入,以将其调整到不是擦除状态的状态,其中所施加的电压不会导致过多的写入 ,不执行验证读取; 以及在对所述至少一个所述存储器单元执行写入之后,通过应用与所述存储单元的目标阈值对应的验证电压来执行验证读取,以将所述至少一个所述存储器单元调整到除了所述擦除状态之外的状态,以及当所述阈值 存储单元的值被确定为低于目标阈值,重复以不引起过量写入的施加电压和验证读取的写入,直到存储单元的阈值变为等于或高于目标阈值 值。