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1. 发明授权

US5333495A Method and apparatus for processing a minute portion of a specimen 失效
标题翻译：用于处理样本的微小部分的方法和装置
公开(公告)号：US5333495A
公开(公告)日：1994-08-02
申请号：US12758
申请日：1993-03-11
申请人： Hiroshi Yamaguchi , Minori Noguchi , Makiko Kohno , Toshihiko Nakata
发明人： Hiroshi Yamaguchi , Minori Noguchi , Makiko Kohno , Toshihiko Nakata
IPC分类号： G01Q10/00 , G01Q30/02 , G01Q30/16 , G01Q60/12 , G01Q60/18 , G01Q60/22 , G01Q60/56 , G01Q70/10 , H01J37/28 , G01B5/28 , G01N21/31 , G01N23/00 , C21K1/00
CPC分类号： G01Q30/02 , B82Y20/00 , B82Y35/00 , G01Q60/22 , H01J37/28 , Y10S977/859 , Y10S977/861 , Y10S977/862 , Y10S977/879
摘要： A method for detecting a photoacoustic signal includes the steps of modulating the intensity of light obtained from a light source at a predetermined modulation frequency, exciting a specimen by directing the intensity-modulated light onto the specimen, thereby generating a photoacoustic effect in the specimen, detecting the photoacoustic effect generated in the specimen and producing a detection signal indicative of the detected photoacoustic effect, and extracting information about the surface and interior of the specimen from the detection signal, wherein the intensity-modulated light is emitted from an aperture of a near-field optical scanning microscope used in directing the intensity-modulated light onto the specimen while a distance between the aperture of the near-field optical scanning microscope and the surface of the specimen is maintained constant irrespective of the photoacoustic effect generated in the specimen.
摘要翻译：一种用于检测光声信号的方法包括以预定调制频率调制从光源获得的光的强度的步骤，通过将强度调制的光引导到样本上来激发样本，从而在样本中产生光声效应，检测在样本中产生的光声效应，产生表示检测到的光声效应的检测信号，以及从检测信号中提取关于样本表面和内部的信息，其中强度调制光从近似的孔径发射用于将强度调制光引导到样本上的现场光学扫描显微镜，而近场光学扫描显微镜的孔径与样本表面之间的距离保持恒定，而与样品中产生的光声效应无关。

2. 发明授权

US5233191A Method and apparatus of inspecting foreign matters during mass production start-up and mass production line in semiconductor production process 失效
标题翻译：在半导体生产过程中批量生产启动和批量生产线中检查异物的方法和装置
公开(公告)号：US5233191A
公开(公告)日：1993-08-03
申请号：US679317
申请日：1991-04-02
申请人： Minori Noguchi , Yukio Kembo , Hiroshi Morioka , Hiroshi Yamaguchi , Makiko Kohno , Yoshimasa Ohshima
发明人： Minori Noguchi , Yukio Kembo , Hiroshi Morioka , Hiroshi Yamaguchi , Makiko Kohno , Yoshimasa Ohshima
IPC分类号： G01N21/94 , G01N21/956 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/14 , G01Q60/10 , G01R31/311 , H01J37/256 , H01L21/00 , H01L21/66
CPC分类号： H01L21/67253 , G01R31/311 , H01J37/256 , H01L21/67276 , H01L21/67288 , H01L22/20 , B82Y35/00 , G01N2021/8822 , G01N21/94 , G01N21/95623
摘要： Method and apparatus of detecting, analyzing and evaluating the content of foreign matters such as dusts and impurities contained in various materials, units, processes and environment standing for constituting components of a mass production line during mass production start-up and during mass production, in order to manage a semiconductor production process. A mass production off-line system including an apparatus for detecting, analyzing and evaluating the content of foreign matters during the mass production start-up is separated from the production line and installed independently thereof. Monitors for detection of foreign matters are provided at necessary locations in the production line and monitor data is evaluated through various units to manage the content of foreign matters in the production line, permitting efficient and economical mass production start-up and mass production. The kind of element of a foreign matter on sampling wafer detected in the mass production line is analyzed by means of STM/STS and the results are compared with a data base to effect identification. A foreign matter or a contaminant is detected by detecting a scatttered beam, of a light spot which scans the surface of a substrate. The detection of the scattered beam is carried out under the condition that Rayleigh scattering of the light spot on the light spot irradiation and reflection paths and Rayleigh scattering of the scattered beam on the scattered beam detection path are suppressed to a minimum. For the suppression of Rayleigh scattering, a low-pressure or low-temperature atmosphere may be used.
摘要翻译：检测，分析和评估大规模生产启动期间和批量生产期间大规模生产线组成部件的各种材料，单位，工艺和环境中所含的灰尘和杂质等杂质的含量，为了管理半导体生产过程。包括用于在批量生产启动期间检测，分析和评估异物含量的装置的批量生产离线系统与生产线分离并独立安装。在生产线必需的位置提供检测异物的监测器，通过各种单位对监测数据进行评估，对生产线内的异物含量进行管理，实现高效，经济的批量生产启动和批量生产。通过STM / STS分析在大规模生产线上检测到的采样晶圆上的异物元素的种类，并将结果与数据库进行比较以进行识别。通过检测扫描基板表面的光斑的光斑光束来检测异物或污染物。在光点照射和反射路径上的光斑的瑞利散射和散射光束检测路径上的散射光束的瑞利散射被抑制到最小的条件下进行散射光束的检测。为了抑制瑞利散射，可以使用低压或低温气氛。

3. 发明授权

US5214282A Method and apparatus for processing a minute portion of a specimen 失效
标题翻译：用于处理样品的分钟部分的方法和装置
公开(公告)号：US5214282A
公开(公告)日：1993-05-25
申请号：US707774
申请日：1991-05-30
申请人： Hiroshi Yamaguchi , Minori Noguchi , Makiko Kohno , Toshihiko Nakata
发明人： Hiroshi Yamaguchi , Minori Noguchi , Makiko Kohno , Toshihiko Nakata
IPC分类号： G01Q10/00 , G01Q30/02 , G01Q30/16 , G01Q60/12 , G01Q60/18 , G01Q60/22 , G01Q60/56 , G01Q70/10 , H01J37/28
CPC分类号： G01Q30/02 , B82Y20/00 , B82Y35/00 , G01Q60/22 , H01J37/28 , Y10S977/859 , Y10S977/861 , Y10S977/862 , Y10S977/879
摘要： An image of a specimen which is to be processed is detected by a near-field optical scanning microscope. An image with extremely high resolution for identifying a minute portion of several tens nm is detected. The detected minute portion is processed by, for example, a tunnel current of a scanning tunneling microscope.

4. 发明授权

US5746826A Method and apparatus for forming microstructure body 失效
标题翻译：用于形成微结构体的方法和装置
公开(公告)号：US5746826A
公开(公告)日：1998-05-05
申请号：US347416
申请日：1994-12-02
申请人： Tsuyoshi Hasegawa , Shigeyuki Hosoki , Makiko Kohno , Masakazu Ichikawa , Hitoshi Nakahara , Toshiyuki Usagawa
发明人： Tsuyoshi Hasegawa , Shigeyuki Hosoki , Makiko Kohno , Masakazu Ichikawa , Hitoshi Nakahara , Toshiyuki Usagawa
IPC分类号： G01Q60/10 , G01Q60/58 , G01Q80/00 , H01L21/205 , C30B25/04
CPC分类号： B82Y30/00 , B82Y40/00 , H01L21/0237 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02491 , H01L21/02532 , H01L21/0262 , Y10S117/913 , Y10S977/855
摘要： Utilizing rugged pattern of atomic size present on a crystalline substrate of a semiconductor such as silicon or selenium or the like, a microstructure body is produced on the substrate by forming a layer of a first element of one monolayer or less by arranging at the position of the substrate most stable in energy formed by ruggedness the atoms of the first element such as gold, silver, copper, nickel, palladium, platinum or an element of group IV and then depositing successively atoms of at least one second element of group III, group IV and group V on only at a part of the surface of the substrate on which said layer of one monolayer or less by vapor deposition, sputtering or the like.
摘要翻译： PCT No.PCT / JP94 / 00561 Sec。 371日期1994年12月2日第 102（e）1994年12月2日PCT PCT 1994年4月5日PCT公布。公开号WO94 / 23445 日期1994年10月13日利用存在于诸如硅或硒等半导体的晶体衬底上的原子尺寸的粗糙图案，通过以下方式在基板上形成微结构体：通过形成一层单层或更小的第一元素层，布置在基底最稳定的能量位置上，该能量由第一元素的原子如金，银，铜，镍，钯，铂或IV族元素的粗糙度形成，然后连续沉积至少一个第二元素的原子仅在通过气相沉积，溅射等在其上存在一层或更少层的一层以上的基板表面的一部分上的III族，IV族和V族。

5. 发明授权

US5585722A Apparatus for measuring physical properties of micro area 失效
标题翻译：用于测量微区物理性能的装置
公开(公告)号：US5585722A
公开(公告)日：1996-12-17
申请号：US317737
申请日：1994-10-04
申请人： Shigeyuki Hosoki , Tsuyoshi Hasegawa , Makiko Kohno
发明人： Shigeyuki Hosoki , Tsuyoshi Hasegawa , Makiko Kohno
IPC分类号： G01B7/34 , G01N27/00 , G01Q30/10 , G01Q30/12 , G01Q30/16 , G01R33/56 , G01R33/20
CPC分类号： G01Q60/30 , B82Y35/00 , G01Q60/04 , G01Q60/08 , G01Q60/14 , G01R33/56 , Y10S977/838 , Y10S977/849 , Y10S977/863 , Y10S977/865 , Y10S977/96
摘要： An apparatus for measuring physical properties of micro area which has an object to measure physical properties from a micro area on an atomic scale on the surface of a test sample such as electron spin, nuclear magnetic moment, and nuclear quadrupole moment in high sensitivity, allows the probe 2 of the atomic force microscope to approach the surface of the test sample 1, applies a magnetic field to the test sample 1 by the magnetic field generation coil 27 and the magnetic paths 22 to 26 and furthermore a high frequency electromagnetic field to the test sample 1 by the coils 16 and 17 respectively, and detects a signal from atoms existing on the surface of the test sample 1 which are resonant with the high frequency electromagnetic field by the probe 2.
摘要翻译：用于测量微区物理性质的装置，其具有以高灵敏度测量诸如电子自旋，核磁矩和核四极矩的测试样品表面上的原子尺度上的微区域的物理特性，允许原子力显微镜的探针2接近测试样品1的表面，通过磁场产生线圈27和磁路22至26向测试样品1施加磁场，此外还将高频电磁场施加到分别由线圈16和17测试样品1，并且通过探针2检测来自存在于测试样品1的表面上的原子与高频电磁场共振的信号。

6. 发明授权

US5218335A Electronic circuit device having thin film resistor and method for producing the same 失效
标题翻译：具有薄膜电阻器的电子电路装置及其制造方法
公开(公告)号：US5218335A
公开(公告)日：1993-06-08
申请号：US690350
申请日：1991-04-24
申请人： Asao Nakano , Kiyoshi Ogata , Makiko Kohno , Yasunori Narizuka
发明人： Asao Nakano , Kiyoshi Ogata , Makiko Kohno , Yasunori Narizuka
IPC分类号： B41J2/335 , C23C14/06 , C23C14/34 , H01C7/00 , H01C17/12 , H01L23/64 , H01L27/01 , H05K1/16 , H05K3/46
CPC分类号： H01C7/006 , C23C14/0688 , C23C14/3414 , H01C17/12 , H01L23/647 , H01L2224/16 , H01L2224/16225 , H01L2924/01014 , H01L2924/01019 , H01L2924/01078 , H05K1/16 , H05K3/4644
摘要： In an electronic circuit device, a thin film resistor is formed on a substrate and includes first regions including one kind of atom such as Cr and exhibiting an electric conductivity and a second region including a compound such as SiO.sub.2 composed of two kinds of atoms and exhibiting an insulating property. In the thin film resistor, the first regions are scattered in the second region and have an average particle size of 2 nm to 20 nm.
摘要翻译：在电子电路装置中，在基板上形成薄膜电阻体，其包含包含Cr等的一种原子，具有导电性的第一区域和包含由两种原子构成的SiO 2等化合物的第二区域，绝缘性能。在薄膜电阻器中，第一区域在第二区域中散布，平均粒径为2nm〜20nm。

7. 发明授权

US5698798A Method and apparatus for dynamic observation of specimen 失效
标题翻译：试样动态观察方法及装置
公开(公告)号：US5698798A
公开(公告)日：1997-12-16
申请号：US411316
申请日：1995-03-28
申请人： Makiko Kohno , Shigeyuki Hosoki , Tsuyoshi Hasegawa , Yusuke Yajima , Toshio Katsuyama
发明人： Makiko Kohno , Shigeyuki Hosoki , Tsuyoshi Hasegawa , Yusuke Yajima , Toshio Katsuyama
IPC分类号： G01D21/00 , G01N23/00 , G01N25/00 , G01N33/00 , G01Q80/00
CPC分类号： G01Q60/12 , B82Y35/00 , Y10S977/852
摘要： In a measuring method and a measuring apparatus which are suited for observing a dynamic physical phenomenon particularly in a microdevice, a signal for generating a physical phenomenon in a specimen is inputted to the specimen, and a signal which is caused by this dynamic physical phenomenon is detected by a probe which is close to or in contact with the specimen surface in correspondence with a signal input to the specimen on the basis of the specific time. The measuring apparatus has a scanning probe microscope with a probe (tip) which is close to or in contact with the specimen surface, a pulse voltage application control unit for applying respective pulse voltages to the specimen and probe, and a signal measuring unit for measuring a signal from the specimen detected by the probe. The measuring apparatus causes a dynamic physical phenomenon in the specimen by applying the pulse voltage to the specimen, applies a bias voltage between the probe and specimen by applying the pulse voltage to the probe, and detects the signal caused by the dynamic physical phenomenon in the specimen. Pulse voltage application to the probe is executed by the pulse voltage application control unit in correspondence with pulse voltage application to the specimen on the basis of the specific time. A dynamic physical phenomenon in a microarea of a specimen which is caused by the particle property or wave property of electrons can thus be observed.
摘要翻译：在适于观察动态物理现象的测量方法和测量装置中，特别是在微型装置中，用于产生样本中的物理现象的信号被输入到样本，并且由该动态物理现象引起的信号是通过与基于特定时间输入到样本的信号相对应的与探针接近或接触的探针来检测。测量装置具有扫描探针显微镜，其具有与试样表面接近或接触的探针（尖端），用于向样本和探针施加相应脉冲电压的脉冲电压施加控制单元，以及用于测量由探针检测到的样本的信号。测量装置通过向样本施加脉冲电压来引起样品中的动态物理现象，通过向探针施加脉冲电压在探针和样品之间施加偏置电压，并且检测由于动态物理现象引起的信号标本。脉冲电压施加到探针由脉冲电压施加控制单元根据具体时间对标本施加脉冲电压进行。因此可以观察到由电子的粒子特性或波特性引起的样品的微区域中的动态物理现象。

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